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1. 发明授权

US5442201A Semiconductor light emitting device with nitrogen doping 失效
标题翻译：具有氮掺杂的半导体发光器件
公开(公告)号：US5442201A
公开(公告)日：1995-08-15
申请号：US216278
申请日：1994-03-23
申请人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/00 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/305 , Y10S438/925
摘要： An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0
摘要翻译：由式（Al x Ga 1-x）y In 1-y P（0

2. 发明授权

US5442203A Semiconductor light emitting device having AlGaAsP light reflecting layers 失效
标题翻译：具有AlGaAsP光反射层的半导体发光器件
公开(公告)号：US5442203A
公开(公告)日：1995-08-15
申请号：US299084
申请日：1994-08-18
申请人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
IPC分类号： H01L33/10 , H01L33/14 , H01L33/30 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19 , H01L33/00
CPC分类号： H01L33/14 , H01L33/10 , H01S5/20 , H01S5/32308 , H01S5/2004 , H01S5/3211 , H01S5/32325
摘要： A semiconductor light emitting device has a light emitting layer portion comprising AlGaInP layers formed on a GaAs substrate. A light reflecting layer portion comprising alternately laminated layers with different refractive indices is provided between the GaAs substrate and the light emitting layer portion. The light reflecting layer portion comprises Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v layers (where: 0.ltoreq.w.ltoreq.1, 0
摘要翻译：半导体发光器件具有包含在GaAs衬底上形成的AlGaInP层的发光层部分。在GaAs衬底和发光层部分之间设置包括具有不同折射率的交替叠层的光反射层部分。光反射层部分包括AlwGa1-wAs1-vPv层（其中：0≤w≤1,0

3. 发明授权

US5600158A Semiconductor light emitting device with current spreading layer 失效
标题翻译：具有电流扩散层的半导体发光器件
公开(公告)号：US5600158A
公开(公告)日：1997-02-04
申请号：US514628
申请日：1995-08-14
申请人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
发明人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/14
摘要： A semiconductor light emitting device comprising an n-type GaAs substrate, a light emitting layer portion consisting of an AlGaInP double heterojunction structure formed on the substrate, and a p-type current spreading layer formed on the light emitting layer portion, wherein the p-type current spreading layer comprises an undoped current spreading layer and a heavily-doped current spreading layer formed on said undoped current spreading layer. With this construction, it is possible to achieve a stable control of carrier concentration in a p-type cladding layer, to prevent deterioration of the interface between the p-type cladding layer and an active layer and also to prevent crystallinty-deterioration of the active layer with the result that the emission intensity of the device can be increased to a considerable extent.
摘要翻译：一种半导体发光器件，包括n型GaAs衬底，由形成在衬底上的AlGaInP双异质结结构构成的发光层部分和形成在发光层部分上的p型电流扩散层，型电流扩展层包括未掺杂电流扩展层和形成在所述未掺杂电流扩展层上的重掺杂电流扩散层。通过这种结构，可以实现p型包覆层中的载流子浓度的稳定控制，以防止p型覆层与有源层之间的界面的劣化，并且防止活性物质的结晶劣化从而可以在相当程度上增加器件的发光强度。

4. 发明授权

US5597761A Semiconductor light emitting device and methods of manufacturing it 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5597761A
公开(公告)日：1997-01-28
申请号：US402487
申请日：1995-03-10
申请人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/00 , H01L33/30 , H01L21/208
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/305 , Y10S438/925
摘要： An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0
摘要翻译：由式（Al x Ga 1-x）y In 1-y P（0

5. 发明授权

US5739553A Algainp light-emitting device 失效
标题翻译：阿根廷发光装置
公开(公告)号：US5739553A
公开(公告)日：1998-04-14
申请号：US577961
申请日：1995-12-26
申请人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
发明人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
IPC分类号： H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/14
摘要： The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), an (Al.sub.0.15 Ga.sub.0.85).sub.0.51 In.sub.0.49 P active layer (about 0.6 .mu.m in thickness), a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), and a p-type current-spreading layer composed of either a p-type Al.sub.0.7 Ga.sub.0.3 As layer (about 3 .mu.m in thickness) or a p-type Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03 layer (about 3 .mu.m in thickness) and a p-type GaAs.sub.0.5 P.sub.0.5 layer (about 7 .mu.m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs.sub.0.5 P.sub.0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.
摘要翻译：本发明提供一种具有更长寿命和更高可靠性的AlGaInP发光器件。 AlGaInP发光器件包括n型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm），（Al0.15Ga0.85）0.51In0.49P有源层（约0.6 厚度为1μm），p型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm）以及由p型Al0构成的p型电流扩展层。（厚约3μm）或p型Al0.7Ga0.3As0.97P0.03层（约3μm厚）和p型GaAs0.5P0.5层（约7μm） m），依次形成在n型GaAs衬底上，另外安装在p型GaAs0.5P0.5层上的上表面电极和安装在n型GaAs的下表面上的下表面电极基质。

6. 发明授权

US5444269A AlGaInP light emitting device 失效
标题翻译： AlGaInP发光器件
公开(公告)号：US5444269A
公开(公告)日：1995-08-22
申请号：US251370
申请日：1994-05-31
申请人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
IPC分类号： H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/14
摘要： An AlGaInP double heterojunction structure or an AlGaInP single heterojunction structure is formed on a first conductivity-type GaAs substrate, and then a layer made of a second conductivity-type Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v mixed crystal (Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03, for example) which has the bandgap energy larger than the energy of photon emitted from the active layer of said light emitting layer portion, and has good lattice-matching with (Al.sub.B Ga.sub.1-B).sub.0.51 In.sub.0.49 P mixed crystal (layer) constituting said light emitting layer portion, is formed as a current spreading layer on top of said light emitting layer portion. Here, w and v are in the range of 0.45.ltoreq.w
摘要翻译：在第一导电型GaAs衬底上形成AlGaInP双异质结结构或AlGaInP单异质结结构，然后形成由第二导电型AlwGa1-wAs1-vPv混晶（Al0.7Ga0.3As0.97P0.03 具有比从所述发光层部分的有源层发射的光子能量大的带隙能量，并且与构成所述发光层部分的（AlBGa1-B）0.51In0.49P混晶（层）具有良好的晶格匹配发光层部分形成为在所述发光层部分的顶部上的电流扩散层。这里，w和v分别在0.45

7. 发明授权

US06759689B2 Light emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US06759689B2
公开(公告)日：2004-07-06
申请号：US10213081
申请日：2002-08-07
申请人： Keizo Adomi , Masanobu Takahashi , Nobuhiko Noto
发明人： Keizo Adomi , Masanobu Takahashi , Nobuhiko Noto
IPC分类号： H01L3300
CPC分类号： H01L33/0079 , H01L33/12 , H01L33/405
摘要： A metal layer 3, a light emitting layer section 4 and a first electrode 5 are formed in the order on a first main surface 7 side of a conductive substrate 2 and a current is supplied to the light emitting layer section 4 through the first electrode 5 and the conductive substrate 2. By using reflection on the metal layer 3, not only can good external quantum efficiency be realized, but electrodes or terminals can also be formed on both sides of the light emitting element. Thus, provided is a light emitting element excellent in external quantum efficiency thereof and in addition, not only simple in structure of a terminal lead thereof but excellent in convenience.
摘要翻译：在导电性基板2的第一主面7侧依次形成金属层3，发光层部4和第一电极5，并且通过第一电极5向发光层部4供给电流和导电基板2.通过在金属层3上使用反射，不仅可以实现良好的外部量子效率，而且可以在发光元件的两侧形成电极或端子。因此，提供了其外部量子效率优异的发光元件，此外，不仅其端子引线的结构简单，而且方便性优异。

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