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1. 发明申请

US20070259534A1 IN-SITU FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS 有权
标题翻译：氧化氮化铝膜的现场形成
公开(公告)号：US20070259534A1
公开(公告)日：2007-11-08
申请号：US11745278
申请日：2007-05-07
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/303 , C23C16/56
摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.
摘要翻译：提供了一种在衬底上原位形成薄的氧化AlN膜的方法。该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

2. 发明授权

US07994070B1 Low-temperature dielectric film formation by chemical vapor deposition 有权
标题翻译：通过化学气相沉积形成低温电介质膜
公开(公告)号：US07994070B1
公开(公告)日：2011-08-09
申请号：US12894513
申请日：2010-09-30
申请人： Anthony Dip , Kimberly G Reid
发明人： Anthony Dip , Kimberly G Reid
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/02271 , H01L21/28185 , H01L21/28202 , H01L21/28211 , H01L21/28273 , H01L21/3105
摘要： A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400° C. and less than 650° C., flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.
摘要翻译：用于在基板上沉积电介质膜的方法包括将多个基板定位在处理室中，将处理室加热到400℃至小于650℃的沉积温度，使包含水蒸气的第一工艺气体进入处理室，使包含二氯硅烷（DCS）的第二工艺气体流入处理室，建立小于2Torr的气体压力，并使第一和第二工艺气体反应以在多个衬底上热沉积氧化硅膜。一个实施例还包括在流过第一处理气体和第二处理气体的同时使包含一氧化氮（NO）气体的第三处理气体流入处理室; 并使氧化膜与第三工艺气体反应，以在衬底上形成氮氧化硅膜。

3. 发明授权

US07534731B2 Method for growing a thin oxynitride film on a substrate 失效
标题翻译：在基板上生长薄氧氮化物膜的方法
公开(公告)号：US07534731B2
公开(公告)日：2009-05-19
申请号：US11694643
申请日：2007-03-30
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0214 , H01L21/02249 , H01L21/02255 , H01L21/3144
摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5 ×10 12 per cc.
摘要翻译：用于在衬底上生长氧氮化物膜的方法包括将衬底定位在处理室中，加热处理室，使包含水蒸气的湿法工艺气体和包含一氧化氮的氮化气体流入处理室。湿法工艺气体和氮化气体形成与衬底反应的处理环境，使得氧氮化物膜在衬底上生长。在另一个实施方案中，该方法还包括使稀释气体流入处理室，同时使湿法气体流动以控制氮氧化物膜的生长速率。在另一个实施例中，该方法还包括在退火气体中退火衬底和氧氮化物膜。根据其中衬底是硅的方法的实施方案，形成氧氮化硅膜，其表现出至少约6原子％的氮峰浓度和小于约1.5×10 12 / cc的界面态密度。

4. 发明授权

US07776763B2 In-situ formation of oxidized aluminum nitride films 有权
标题翻译：氧化氮化铝膜的原位形成
公开(公告)号：US07776763B2
公开(公告)日：2010-08-17
申请号：US11745278
申请日：2007-05-07
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/303 , C23C16/56
摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.
摘要翻译：提供了一种在衬底上原位形成薄的氧化AlN膜的方法。该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

5. 发明申请

US20090088000A1 METHOD FOR GROWING AN OXYNITRIDE FILM ON A SUBSTRATE 失效
标题翻译：在基材上生长氧化膜的方法
公开(公告)号：US20090088000A1
公开(公告)日：2009-04-02
申请号：US11865060
申请日：2007-09-30
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/469
CPC分类号： H01L21/3145 , C23C8/34 , H01L21/28202 , H01L29/518
摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a first wet process gas comprising water vapor into the process chamber, and reacting the substrate with the first wet process gas to grow an oxide film on the substrate. The method further includes flowing a second wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber, and reacting the oxide film and the substrate with the second wet process gas to grow an oxynitride film. In another embodiment, the method further comprises annealing the substrate containing the oxynitride film in an annealing gas. According to one embodiment of the method where the substrate is silicon, a silicon oxynitride film can be formed that exhibits a nitrogen peak concentration of approximately 3 atomic % or greater.
摘要翻译：在衬底上生长氮氧化物膜的方法包括将衬底定位在处理室中，加热处理室，将包含水蒸气的第一湿法工艺气体流入处理室，以及使衬底与第一湿法工艺气体反应生长在基板上的氧化物膜。所述方法还包括将包含水蒸气的第二湿法工艺气体和包含一氧化氮的氮化气体流入所述处理室，以及使所述氧化物膜和所述衬底与所述第二湿法工艺气体反应以生长氧氮化物膜。在另一个实施方案中，该方法还包括在退火气体中退火含有氧氮化物膜的基材。根据基板是硅的方法的一个实施例，可以形成显示大约3原子％以上的氮峰浓度的氮氧化硅膜。

6. 发明授权

US07816278B2 In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition 有权
标题翻译：使用原子层沉积和化学气相沉积的高介电常数膜的原位杂化沉积
公开(公告)号：US07816278B2
公开(公告)日：2010-10-19
申请号：US12058470
申请日：2008-03-28
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/33
CPC分类号： H01L21/3141 , C23C16/02 , C23C16/405 , C23C16/44 , C23C16/45546 , C23C16/56 , H01L21/02181 , H01L21/02271 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3144 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.
摘要翻译：一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

7. 发明授权

US07659214B2 Method for growing an oxynitride film on a substrate 失效
标题翻译：在基板上生长氮氧化物膜的方法
公开(公告)号：US07659214B2
公开(公告)日：2010-02-09
申请号：US11865060
申请日：2007-09-30
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316
CPC分类号： H01L21/3145 , C23C8/34 , H01L21/28202 , H01L29/518
摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a first wet process gas comprising water vapor into the process chamber, and reacting the substrate with the first wet process gas to grow an oxide film on the substrate. The method further includes flowing a second wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber, and reacting the oxide film and the substrate with the second wet process gas to grow an oxynitride film. In another embodiment, the method further comprises annealing the substrate containing the oxynitride film in an annealing gas. According to one embodiment of the method where the substrate is silicon, a silicon oxynitride film can be formed that exhibits a nitrogen peak concentration of approximately 3 atomic % or greater.
摘要翻译：在衬底上生长氮氧化物膜的方法包括将衬底定位在处理室中，加热处理室，将包含水蒸气的第一湿法工艺气体流入处理室，以及使衬底与第一湿法工艺气体反应生长在基板上的氧化物膜。所述方法还包括将包含水蒸气的第二湿法工艺气体和包含一氧化氮的氮化气体流入所述处理室，以及使所述氧化物膜和所述衬底与所述第二湿法工艺气体反应以生长氧氮化物膜。在另一个实施方案中，该方法还包括在退火气体中退火含有氧氮化物膜的基材。根据基板是硅的方法的一个实施例，可以形成显示大约3原子％以上的氮峰浓度的氮氧化硅膜。

8. 发明申请

US20090246971A1 IN-SITU HYBRID DEPOSITION OF HIGH DIELECTRIC CONSTANT FILMS USING ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION 有权
标题翻译：使用原子层沉积和化学气相沉积的高介电常数膜的现场混合沉积
公开(公告)号：US20090246971A1
公开(公告)日：2009-10-01
申请号：US12058470
申请日：2008-03-28
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/02 , C23C16/405 , C23C16/44 , C23C16/45546 , C23C16/56 , H01L21/02181 , H01L21/02271 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3144 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.
摘要翻译：一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

9. 发明申请

US20080242109A1 METHOD FOR GROWING A THIN OXYNITRIDE FILM ON A SUBSTRATE 失效
标题翻译：在基材上生长薄膜的方法
公开(公告)号：US20080242109A1
公开(公告)日：2008-10-02
申请号：US11694643
申请日：2007-03-30
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/314
CPC分类号： H01L21/0214 , H01L21/02249 , H01L21/02255 , H01L21/3144
摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5×1012 per cc.
摘要翻译：用于在衬底上生长氧氮化物膜的方法包括将衬底定位在处理室中，加热处理室，使包含水蒸气的湿法工艺气体和包含一氧化氮的氮化气体流入处理室。湿法工艺气体和氮化气体形成与衬底反应的处理环境，使得氧氮化物膜在衬底上生长。在另一个实施方案中，该方法还包括使稀释气体流入处理室，同时使湿法气体流动以控制氮氧化物膜的生长速率。在另一个实施例中，该方法还包括在退火气体中退火衬底和氧氮化物膜。根据其中衬底是硅的方法的实施方案，形成氧氮化硅膜，其表现出至少约6原子％的氮峰浓度和小于约1.5×10 12的界面态密度 cc。

10. 发明申请

US20080169534A1 REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEATURES 有权
标题翻译：在微特征中减少缺陷硅或硅锗沉积
公开(公告)号：US20080169534A1
公开(公告)日：2008-07-17
申请号：US11622204
申请日：2007-01-11
申请人： Anthony Dip , John Gumpher , Allen John Leith , Seungho Oh
发明人： Anthony Dip , John Gumpher , Allen John Leith , Seungho Oh
IPC分类号： H01L21/36 , H01L29/06
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0245 , H01L21/0262 , H01L21/02639
摘要： A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.
摘要翻译：提供了一种减少缺陷的方法，例如在图案化衬底上的微特征中的无空隙或减少的空隙Si或SiGe沉积。微型特征包括侧壁，并且图案化衬底在场区域和微特征的侧壁和底部上包含隔离层。该方法包括在微特征的底部形成Si或SiGe种子层，并且通过在Si或SiGe种子层上选择性地生长Si或SiGe，从底部至少部分地填充微特征。根据一个实施例，Si或SiGe种子层通过将沉积的Si或SiGe层沉积在图案化的衬底上，从场区去除Si或SiGe层而形成，在H区存在下热处理Si或SiGe层，从而将Si或SiGe层的至少一部分从侧壁传递到微特征的底部，并且从场区域和侧壁蚀刻Si或SiGe残留物。

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