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热词
    • 10. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20130175549A1
    • 2013-07-11
    • US13824338
    • 2011-09-13
    • Keiji Okumura
    • Keiji Okumura
    • H01L27/06
    • H01L27/0255H01L27/0629H01L29/0619H01L29/0696H01L29/1608H01L29/45H01L29/4916H01L29/66068H01L29/7395H01L29/7808H01L29/7811H01L29/861H01L2924/0002H01L2924/00
    • A semiconductor device (1) includes an n type epitaxial layer (8), body regions (12) formed in the surface layer part of the n type epitaxial layer (8), n type source regions (16) formed in the surface layer parts of the body regions (12), a gate insulating film (19) formed on the n type epitaxial layer (8), and a gate protection diode (30) and gate electrodes (20) formed on the gate insulating film (19). The gate protection diode (30) includes a first p type region (31), an n type region (32), and a second p type region (33). A first diode (30A) is formed of the first p type region (31) and the n type region (32). A second diode (30B) is formed of the n type region (32) and the second p type region (33). The first p type region (31) is connected to the gate electrode (20). The second p type region (33) is connected to a source electrode (27).
    • 半导体器件(1)包括n型外延层(8),形成在n型外延层(8)的表层部分的体区(12),形成在表层部分中的n型源区 形成在n型外延层(8)上的栅极绝缘膜(19)和形成在栅极绝缘膜(19)上的栅极保护二极管(30)和栅电极(20)。 栅极保护二极管(30)包括第一p型区域(31),n型区域(32)和第二p型区域(33)。 第一二极管(30A)由第一p型区域(31)和n型区域(32)形成。 第二二极管(30B)由n型区域(32)和第二p型区域(33)形成。 第一p型区域(31)连接到栅电极(20)。 第二p型区域(33)连接到源电极(27)。