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    • 3. 发明授权
    • Optical projection printing apparatus wherein wafer mark has a grating
pitch in the sagittal plane of the first optical system
    • 光学投影印刷设备,其中晶片标记在第一光学系统的矢状平面中具有光栅间距
    • US4857744A
    • 1989-08-15
    • US224654
    • 1988-07-27
    • Keiji KataokaToshiei KurosakiSeiji YonezawaSoichi Katagiri
    • Keiji KataokaToshiei KurosakiSeiji YonezawaSoichi Katagiri
    • G03F9/00
    • G03F9/7049
    • An optical projection printing apparatus which can irradiate a mask with light from a first light source to focus the mask pattern on a resist of a semiconductor wafer in a highly accurate alignment by a first optical system including a projection lens. A wafer mark formed on the wafer to have a grating pattern shape is arranged to have its grating pitch direction located in the sagittal plane of the first optical system. The wafer mark is irradiated with the light coming from a second light source having a wavelength different from that of the first light source. Of the reflected light from the wafer mark, only the .+-. 1st order diffraction light is extracted by a filter and partially superposed on the mask in a transversely misaligned state so that the reflected light from the wafer mark may be focused by a second optical system. The aforementioned filter is disposed in the Fourier plane of the second optical system.
    • 一种光学投影印刷设备,其可以用来自第一光源的光照射掩模,以通过包括投影透镜的第一光学系统以高度准确的对准将掩模图案聚焦在半导体晶片的抗蚀剂上。 形成在晶片上以具有光栅图案形状的晶片标记被布置成使其光栅俯仰方向位于第一光学系统的矢状平面中。 用来自具有与第一光源的波长不同的波长的第二光源的光照射晶片标记。 在来自晶片标记的反射光中,只有+/- 1级衍射光被滤光器提取,并以横向不对准状态部分地重叠在掩模上,使得来自晶片标记的反射光可以通过第二光学 系统。 上述滤光器设置在第二光学系统的傅立叶平面中。