专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07534717B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07534717B2
公开(公告)日：2009-05-19
申请号：US11094182
申请日：2005-03-31
申请人： Hideshi Miyajima , Keiji Fujita , Hideaki Masuda , Rempei Nakata , Miyoko Shimada
发明人： Hideshi Miyajima , Keiji Fujita , Hideaki Masuda , Rempei Nakata , Miyoko Shimada
IPC分类号： H01L21/31 , H01L21/4763
CPC分类号： H01L21/02118 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02351 , H01L21/3122 , H01L21/76801 , H01L21/76807 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76835
摘要： The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.
摘要翻译：在基板上形成层间绝缘膜，此后在层间绝缘膜上形成有机材料的绝缘膜，用电子束照射有机材料的绝缘膜和层间绝缘膜，从而固化至少提出了有机材料的绝缘膜。

2. 发明申请

US20050250311A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20050250311A1
公开(公告)日：2005-11-10
申请号：US11094182
申请日：2005-03-31
申请人： Hideshi Miyajima , Keiji Fujita , Hideaki Masuda , Rempei Nakata , Miyoko Shimada
发明人： Hideshi Miyajima , Keiji Fujita , Hideaki Masuda , Rempei Nakata , Miyoko Shimada
IPC分类号： H01L21/768 , H01L21/20 , H01L21/312
CPC分类号： H01L21/02118 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02351 , H01L21/3122 , H01L21/76801 , H01L21/76807 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76835
摘要： The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.
摘要翻译：在基板上形成层间绝缘膜，此后在层间绝缘膜上形成有机材料的绝缘膜，用电子束照射有机材料的绝缘膜和层间绝缘膜，从而固化至少提出了有机材料的绝缘膜。

3. 发明授权

US07094681B2 Semiconductor device fabrication method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07094681B2
公开(公告)日：2006-08-22
申请号：US10701476
申请日：2003-11-06
申请人： Keiji Fujita , Rempei Nakata , Hideshi Miyajima
发明人： Keiji Fujita , Rempei Nakata , Hideshi Miyajima
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/02126 , H01L21/02137 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02351 , H01L21/31695 , H01L21/7682 , H01L23/53228 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a porous insulating film formed above the semiconductor substrate, the porous insulating film having a relative dielectric constant of 2.5 or less and including a first insulating material, at least a portion of pores in the porous insulating film having on the inner wall thereof a layer of a second insulating material which differs in nature from the first insulating material, and a plug and/or a wiring layer buried in the porous insulating film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，形成在半导体衬底上的多孔绝缘膜，多孔绝缘膜的相对介电常数为2.5或更小，并且包括第一绝缘材料，多孔绝缘体中的至少一部分孔在其内壁上具有与第一绝缘材料不同的第二绝缘材料层，以及埋在多孔绝缘膜中的插塞和/或布线层。

4. 发明授权

US06784092B2 Method of forming insulating film and method of manufacturing semiconductor device 失效
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US06784092B2
公开(公告)日：2004-08-31
申请号：US10105432
申请日：2002-03-26
申请人： Hideshi Miyajima , Miyoko Shimada , Rempei Nakata
发明人： Hideshi Miyajima , Miyoko Shimada , Rempei Nakata
IPC分类号： H01L214763
CPC分类号： H01L21/02137 , H01L21/02282 , H01L21/02351 , H01L21/3122 , H01L21/76825 , H01L21/76828
摘要： Disclosed is a method for forming an insulating layer, including coating a substrate with an insulating film material to form a coated film, the insulating film material containing at least first and second polymers differing from each other in average molecular weight, and heating the coated film while irradiating the coated film with an electron beam.
摘要翻译：公开了一种形成绝缘层的方法，包括用绝缘膜材料涂覆基板以形成涂膜，所述绝缘膜材料至少包含第一和第二聚合物的平均分子量彼此不同，并且加热涂膜同时用电子束照射涂膜。

5. 发明授权

US06436849B1 Method for manufacturing semiconductor device having low dielectric constant insulating film, wafer processing equipment and wafer storing box used in this method 失效
标题翻译：用于制造具有低介电常数绝缘膜的半导体器件的方法，该方法中使用的晶片加工设备和晶片储存盒
公开(公告)号：US06436849B1
公开(公告)日：2002-08-20
申请号：US09963385
申请日：2001-09-27
申请人： Masahiko Hasunuma , Hideshi Miyajima , Hisashi Kaneko , Rempei Nakata
发明人： Masahiko Hasunuma , Hideshi Miyajima , Hisashi Kaneko , Rempei Nakata
IPC分类号： H01L2131
CPC分类号： H01L21/67253 , H01L21/67017 , H01L21/76828
摘要： A method for manufacturing a semiconductor device, comprising controlling a humidity in an atmosphere around a low dielectric constant insulating film at 30% or less, during a processing period and a transfer period between processing equipments, in which at least a part of said low dielectric constant insulating film is exposed to the atmosphere.
摘要翻译：一种制造半导体器件的方法，包括在处理期间和处理设备之间的转移期间，在低介电常数绝缘膜周围的气氛中控制30％以下的湿度，其中至少部分所述低电介质恒定绝缘膜暴露在大气中。

6. 发明授权

US06746969B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06746969B2
公开(公告)日：2004-06-08
申请号：US09982003
申请日：2001-10-19
申请人： Miyoko Shimada , Hideshi Miyajima , Rempei Nakata , Hideto Matsuyama , Katsuya Okumura , Masahiko Hasunuma , Nobuo Hayasaka
发明人： Miyoko Shimada , Hideshi Miyajima , Rempei Nakata , Hideto Matsuyama , Katsuya Okumura , Masahiko Hasunuma , Nobuo Hayasaka
IPC分类号： H01L2131
CPC分类号： H01L21/02351 , H01L21/02126 , H01L21/02137 , H01L21/02312 , H01L21/02337 , H01L21/2636 , H01L21/3122 , H01L21/316 , H01L21/76825 , H01L21/76828 , H01L21/76834
摘要： A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.
摘要翻译：一种制造半导体器件的方法包括：准备待处理的衬底，以及在衬底上方形成绝缘膜，该绝缘膜包括在衬底上施加绝缘膜原料，所述绝缘膜原料包括物质或物质的前体所述绝缘膜包含该物质，通过在反应器室中加热基板同时在基板上照射电子束来固化绝缘膜原料，改变选自反应器室中的压力，温度的基板，当电子束被照射在基板上时，具有暴露于其中的基板的气体类型，引入反应室的气体流量，基板的位置和每单位时间入射到基板的电子量。

7. 发明授权

US06703302B2 Method of making a low dielectric insulation layer 失效
标题翻译：制造低介电绝缘层的方法
公开(公告)号：US06703302B2
公开(公告)日：2004-03-09
申请号：US10141578
申请日：2002-05-09
申请人： Hideshi Miyajima , Miyoko Shimada , Rempei Nakata
发明人： Hideshi Miyajima , Miyoko Shimada , Rempei Nakata
IPC分类号： H01L214763
CPC分类号： H01L21/76825 , H01L21/76828
摘要： A method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate, heating the low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam, and exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of the Si atoms.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底上形成含有Si原子的低介电常数绝缘膜，在用电子束照射低介电常数绝缘膜的同时加热低介电常数绝缘膜，并暴露低介电常数绝缘膜在加热期间或之后至促进Si原子的键形成的气体。

8. 发明授权

US06458713B1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06458713B1
公开(公告)日：2002-10-01
申请号：US09604726
申请日：2000-06-28
申请人： Nobuhide Yamada , Rempei Nakata , Hideshi Miyajima , Motonobu Kawai
发明人： Nobuhide Yamada , Rempei Nakata , Hideshi Miyajima , Motonobu Kawai
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3122 , H01L21/316
摘要： A method of forming a film, which comprises the steps of coating a liquid raw material comprising a precursor of film-forming material dissolved in a solvent, on a surface of substrate, and forming a solid film on the surface of substrate by subjecting the substrate to a plurality of heat treatments differing in heating temperature from each other. The heat treatments differing heating temperatures from each other are performed over the same single hot plate. The film to be formed may be an organic SOG film. There is also disclosed a method of manufacturing a semiconductor device, which comprises the steps of coating a liquid raw material for forming an organosilicon oxide film on a surface of semiconductor substrate, and subjecting the semiconductor substrate to a first heat treatment where the semiconductor substrate is heated in an oxidizing atmosphere and at a temperature of 200° C. or more.
摘要翻译：一种形成膜的方法，其包括以下步骤：将包含溶解在溶剂中的成膜材料的前体的液体原料涂布在基材的表面上，并通过对基材进行处理而在基材表面上形成固体膜涉及加热温度彼此不同的多个热处理。在相同的单个热板上进行彼此不同的加热温度的热处理。待形成的膜可以是有机SOG膜。还公开了一种制造半导体器件的方法，其包括以下步骤：在半导体衬底的表面上涂覆用于形成有机氧化硅膜的液体原料，并对半导体衬底进行第一热处理，其中半导体衬底是在氧化气氛中并在200℃以上的温度下加热。

9. 发明授权

US06962870B2 Method of manufacturing semiconductor device and semiconductor device 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US06962870B2
公开(公告)日：2005-11-08
申请号：US10757534
申请日：2004-01-15
申请人： Hideaki Masuda , Hideshi Miyajima , Rempei Nakata
发明人： Hideaki Masuda , Hideshi Miyajima , Rempei Nakata
IPC分类号： H01L23/522 , H01L21/00 , H01L21/312 , H01L21/314 , H01L21/4763 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76835 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device comprising forming a protective film on a surface of a lower-layer interconnection, and forming a multilayer-structured film by stacking a first porous film, a first non-porous film, a second porous film, and a second non-porous film on a surface of the protective film in this order, and forming a via hole and an interconnect trench. After a resist mask is removed, protective film exposed at a bottom of the via hole is removed. An upper-layer interconnection of dual damascene structure is formed by embedding an interconnect material in the via hole and the interconnect trench.The first non-porous film includes a first layer has a high etching selectivity ratio relative to the protective film, and a second layer has a high etching selectivity ratio relative to the resist mask and the second porous film.
摘要翻译：一种制造半导体器件的方法，包括在下层互连表面上形成保护膜，并通过堆叠第一多孔膜，第一无孔膜，第二多孔膜和第二多孔膜形成多层结构膜在保护膜的表面上依次形成第二无孔膜，形成通孔和配线沟槽。在去除抗蚀剂掩模之后，去除在通孔底部露出的保护膜。通过在通孔和互连沟槽中嵌入互连材料来形成双镶嵌结构的上层互连。第一无孔膜包括第一层相对于保护膜具有高的蚀刻选择比，第二层相对于抗蚀剂掩模和第二多孔膜具有高蚀刻选择性比。

10. 发明授权

US06558747B2 Method of forming insulating film and process for producing semiconductor device 有权
公开(公告)号：US06558747B2
公开(公告)日：2003-05-06
申请号：US10014593
申请日：2001-12-14
申请人： Rempei Nakata , Nobuhide Yamada , Hideshi Miyajima , Akihiro Kojima , Takahiko Kurosawa , Eiji Hayashi , Youngsoon Seo , Atsushi Shiota , Kinji Yamada
发明人： Rempei Nakata , Nobuhide Yamada , Hideshi Miyajima , Akihiro Kojima , Takahiko Kurosawa , Eiji Hayashi , Youngsoon Seo , Atsushi Shiota , Kinji Yamada
IPC分类号： B05D379397
CPC分类号： C08G77/16 , C09D183/06 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式