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1. 发明授权

US06558747B2 Method of forming insulating film and process for producing semiconductor device 有权
公开(公告)号：US06558747B2
公开(公告)日：2003-05-06
申请号：US10014593
申请日：2001-12-14
申请人： Rempei Nakata , Nobuhide Yamada , Hideshi Miyajima , Akihiro Kojima , Takahiko Kurosawa , Eiji Hayashi , Youngsoon Seo , Atsushi Shiota , Kinji Yamada
发明人： Rempei Nakata , Nobuhide Yamada , Hideshi Miyajima , Akihiro Kojima , Takahiko Kurosawa , Eiji Hayashi , Youngsoon Seo , Atsushi Shiota , Kinji Yamada
IPC分类号： B05D379397
CPC分类号： C08G77/16 , C09D183/06 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.

2. 发明授权

US06458713B1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06458713B1
公开(公告)日：2002-10-01
申请号：US09604726
申请日：2000-06-28
申请人： Nobuhide Yamada , Rempei Nakata , Hideshi Miyajima , Motonobu Kawai
发明人： Nobuhide Yamada , Rempei Nakata , Hideshi Miyajima , Motonobu Kawai
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3122 , H01L21/316
摘要： A method of forming a film, which comprises the steps of coating a liquid raw material comprising a precursor of film-forming material dissolved in a solvent, on a surface of substrate, and forming a solid film on the surface of substrate by subjecting the substrate to a plurality of heat treatments differing in heating temperature from each other. The heat treatments differing heating temperatures from each other are performed over the same single hot plate. The film to be formed may be an organic SOG film. There is also disclosed a method of manufacturing a semiconductor device, which comprises the steps of coating a liquid raw material for forming an organosilicon oxide film on a surface of semiconductor substrate, and subjecting the semiconductor substrate to a first heat treatment where the semiconductor substrate is heated in an oxidizing atmosphere and at a temperature of 200° C. or more.
摘要翻译：一种形成膜的方法，其包括以下步骤：将包含溶解在溶剂中的成膜材料的前体的液体原料涂布在基材的表面上，并通过对基材进行处理而在基材表面上形成固体膜涉及加热温度彼此不同的多个热处理。在相同的单个热板上进行彼此不同的加热温度的热处理。待形成的膜可以是有机SOG膜。还公开了一种制造半导体器件的方法，其包括以下步骤：在半导体衬底的表面上涂覆用于形成有机氧化硅膜的液体原料，并对半导体衬底进行第一热处理，其中半导体衬底是在氧化气氛中并在200℃以上的温度下加热。

3. 发明申请

US20110008545A1 FILM FORMING METHOD, FILM FORMING APPARATUS, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：薄膜成型方法，薄膜成型装置，图案形成方法及半导体装置的制造方法
公开(公告)号：US20110008545A1
公开(公告)日：2011-01-13
申请号：US12885934
申请日：2010-09-20
申请人： Shinichi ITO , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi ITO , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： B05D1/02
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将其供给到基板上形成液膜，其中喷嘴的排出口与基板的距离h设定为2mm以上且小于5×10 -5qγ（mm））相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10-5（m·sec / N）。

4. 发明申请

US20080090001A1 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US20080090001A1
公开(公告)日：2008-04-17
申请号：US11987653
申请日：2007-12-03
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： C23C14/54 , B05C11/00
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将所述溶液供给到所述基板上以形成液膜，其中所述喷嘴的排出口与所述基板之间的距离h被设定为不小于2mm并且在小于5×10 -5的范围内，相对于溶液的表面张力γ（N / m）给出的SUP> qgamma（mm），通过排出口连续排出的溶液的排出速度q（m / sec）和5×10 -6 5（m.sec / N）。

5. 发明授权

US08071157B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US08071157B2
公开(公告)日：2011-12-06
申请号：US11987653
申请日：2007-12-03
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： B05D3/12
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将其供给到基板上形成液膜，其中喷嘴的排出口与基板的距离h设定为2mm以上且小于5×10 -5qγ（mm））相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10-5（m·sec / N）。

6. 发明申请

US20050022732A1 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US20050022732A1
公开(公告)日：2005-02-03
申请号：US10927155
申请日：2004-08-27
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： H01L21/027 , H01L21/00 , H01L21/20 , H01L21/288 , H01L21/316 , B05C5/00 , B05B7/00 , B05B13/02 , B05C15/00
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

7. 发明授权

US06800569B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US06800569B2
公开(公告)日：2004-10-05
申请号：US10352954
申请日：2003-01-29
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： H01L2131
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。

8. 发明授权

US07785984B2 Manufacturing method for semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07785984B2
公开(公告)日：2010-08-31
申请号：US11812478
申请日：2007-06-19
申请人： Nobuhide Yamada , Rempei Nakata
发明人： Nobuhide Yamada , Rempei Nakata
IPC分类号： H01L21/76
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/463 , C23C16/56 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/02304
摘要： A manufacturing method for a semiconductor device includes generating on a substrate liquid-phase silanol having fluidity by causing a source gas made of a material containing silicon to react with a source gas made of a material containing oxygen, introducing the silanol into a first recess having an aspect ratio of a predetermined value wholly, and introducing the silanol into a space from a bottom to an intermediate portion in a second recess having an aspect ratio lower than the predetermined value, the first and second recesses are provided in the substrate, burying a silicon oxide film in the first recess and providing the silicon oxide film in the second recess by converting the silanol into the silicon oxide film by dehydrating condensation, and providing a dielectric film having film density higher than that of the silicon oxide film on the silicon oxide film.
摘要翻译：一种半导体装置的制造方法，其特征在于，在具有流动性的基板液相硅烷醇上生成由含有硅的材料制成的源气体与由氧气构成的原料气体反应，将硅烷醇引入到具有整个长宽比为预定值，并且在具有低于预定值的纵横比的第二凹槽中将硅烷醇从底部引导到中间部分的空间中，第一和第二凹部设置在基板中，在第一凹部中形成氧化硅膜，通过将脱水缩合将硅烷醇转化为氧化硅膜，在第二凹部中设置氧化硅膜，在氧化硅上形成膜密度高于氧化硅膜的电介质膜电影。

9. 发明授权

US07604832B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US07604832B2
公开(公告)日：2009-10-20
申请号：US10927155
申请日：2004-08-27
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： B05D1/02 , B05D3/12
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口和基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qgamma（mm）的范围内相对于溶液的表面张力γ（N / m），通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10 -5（m·sec / N）。

10. 发明申请

US20080009143A1 Method of forming silicon oxide layer 审中-公开
标题翻译：形成氧化硅层的方法
公开(公告)号：US20080009143A1
公开(公告)日：2008-01-10
申请号：US11819275
申请日：2007-06-26
申请人： Nobuhide Yamada , Rempei Nakata , Yukio Nishiyama
发明人： Nobuhide Yamada , Rempei Nakata , Yukio Nishiyama
IPC分类号： H01L21/31
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/402 , C23C16/463 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/0234 , H01L21/76224 , H01L21/76834 , H01L21/76837
摘要： Disclosed is a method of forming a silicon oxide layer comprising: supplying at least a gas containing Si as a raw gas to a semiconductor substrate having a recess formed on its surface to form a primary reactant on the surface, then performing dehydration condensation to form a silicon oxide layer above the semiconductor substrate; removing a part of the silicon oxide layer until a portion of the silicon oxide layer formed in the recess that has a lower density than the silicon oxide layer formed in a vicinity of the surface is at least partially exposed; and supplying a gas containing Si to the silicon oxide layer having a lower density.
摘要翻译：公开了一种形成氧化硅层的方法，包括：至少将含有作为原料气体的Si的气体供给到在其表面上形成有凹部的半导体衬底，以在表面上形成主反应物，然后进行脱水缩合形成半导体衬底上的氧化硅层; 去除氧化硅层的一部分直到形成在凹陷中的形成在表面附近形成的氧化硅层的密度较低的氧化硅层的部分至少部分地露出; 并将含Si的气体供给到具有较低密度的氧化硅层。

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