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    • 1. 发明授权
    • Process for determining the distribution of temperatures at surfaces of
high temperature members
    • 确定高温部件表面温度分布的方法
    • US4923308A
    • 1990-05-08
    • US334133
    • 1989-04-06
    • Keiichiro WatanabeTadaaki MatsuhisaHiroaki Sakai
    • Keiichiro WatanabeTadaaki MatsuhisaHiroaki Sakai
    • G01K11/00G01N23/225
    • G01K11/003
    • A process for determining a relative temperature distribution at a surface of a high temperature member to be used in a gas containing oxygen at high temperatures is disclosed. The process comprises the step of determining the relative surface temperature distribution of the member by measuring concentrations of oxygen at the surface of the member, which surface is composed of silicon carbide or silicon nitride. The process may also include the step of quantitatively determining a distribution of temperatures at the surface of the member by measuring concentrations of oxygen at the surface of the member, determining a relationship between temperatures and concentrations of oxygen on a surface of a standard member, and comparing the measured oxygen concentrations at the surface of the member with those of a standard member with reference to this relationship.
    • 公开了一种用于确定在高温下含氧气体中使用的高温部件表面的相对温度分布的方法。 该方法包括通过测量构件表面上的氧的浓度来确定构件的相对表面温度分布的步骤,该表面由碳化硅或氮化硅构成。 该方法还可以包括通过测量构件表面处的氧浓度,确定标准构件的表面上的温度和氧浓度之间的关系来定量地确定构件表面处的温度分布的步骤,以及 参考该关系将成员表面上测量的氧浓度与标准成分的氧浓度进行比较。
    • 9. 发明授权
    • Process for production of a silicon nitride ceramic
    • 氮化硅陶瓷的制造方法
    • US5804521A
    • 1998-09-08
    • US905025
    • 1997-08-01
    • Akira TakahashiMasaaki MasudaKeiichiro Watanabe
    • Akira TakahashiMasaaki MasudaKeiichiro Watanabe
    • C04B35/626C04B35/593C04B35/587
    • C04B35/5935
    • A silicon nitride ceramic of the present invention possesses excellent strength of the surface, including a silicon nitride and a rare earth oxide compound and being characterized in that the ratio of the transverse rupture strength, at a room temperature, of the fired surface used as a tensile surface to the transverse rupture strength, at a room temperature, of the worked surface used as a tensile surface subjected to the working so as to have the surface roughness of R.sub.MAX 0.8 .mu.m or less is 0.7 or more, and the strength ratio is satisfied even when any portion besides the fired surface is utilized as the tensile surface to be worked to have the surface roughness of R.sub.MAX 0.8 .mu.m or less. The present invention also provides a process for producing a silicon nitride ceramic including the steps of: (1) mixing .alpha.-Si.sub.3 N.sub.4 powder and .beta.-Si.sub.3 N.sub.4 powder to obtain a raw material powder so as to satisfy the formula indicated by 0.05.ltoreq..beta./.alpha.+.beta..ltoreq.0.50, in which a refers to the weight of .alpha.-Si.sub.3 N.sub.4 powder and .beta. refers to the weight of .beta.-Si.sub.3 N.sub.4 powder; (2) mixing at least one sintering aid to the raw material powder; (3) forming the powder mixture to give a compact; and (4) firing the compact at a temperature ranging from 1800.degree. to 2000.degree. C. under a nitrogen atmosphere having an atmospheric pressure of at least 1 atm.
    • 本发明的氮化硅陶瓷具有优异的表面强度,包括氮化硅和稀土氧化物,其特征在于,在室温下,作为烧结表面的烧结表面的横向断裂强度的比例 作为经受加工的拉伸面的加工面的拉伸面与横向断裂强度在室温下的表面粗糙度为0.8μm以下,强度比为 即使将烧成的表面以外的任何部分用作待加工的拉伸面,其表面粗糙度为0.8μm以下。 本发明还提供一种制造氮化硅陶瓷的方法,包括以下步骤:(1)将α-Si 3 N 4粉末和β-Si 3 N 4粉末混合以获得原料粉末,以满足0.05≤β /α+β<0.50,其中a表示α-Si 3 N 4粉末的重量,β表示β-Si 3 N 4粉末的重量; (2)将至少一种烧结助剂与原料粉末混合; (3)形成粉末混合物以产生致密的; 和(4)在大气压至少为1个大气压的氮气气氛下,在1800〜2000℃的温度下烧成。