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1. 发明授权

US07450351B2 Magnetoresistive element having current-perpendicular-to-plane structure, magnetic head, and magnetic memory apparatus thereof 失效
标题翻译：具有电流 - 垂直于平面结构的磁阻元件，磁头及其磁存储装置
公开(公告)号：US07450351B2
公开(公告)日：2008-11-11
申请号：US11156870
申请日：2005-06-20
申请人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/14 , H01F10/30 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.
摘要翻译：公开了一种包括固定磁性层，第一非磁性层，自由磁性层和第二非磁性层的CPP型结构的磁阻元件。磁阻元件包括位于自由磁性层和第一非磁性层之间的第一界面层和位于自由磁性层和第二非磁性层之间的第二界面层。第一界面层和第二界面层包括主要具有CoNiFe的材料。

2. 发明申请

US20070217083A1 Magnetoresistive effect device and method of manufacturing ferromagnetic structure 审中-公开
标题翻译：磁阻效应器件及制造铁磁结构的方法
公开(公告)号：US20070217083A1
公开(公告)日：2007-09-20
申请号：US11483565
申请日：2006-07-11
申请人： Keiichi Nagasaka , Hirotaka Oshima , Arata Jogo , Yutaka Shimizu
发明人： Keiichi Nagasaka , Hirotaka Oshima , Arata Jogo , Yutaka Shimizu
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A spin valve film has a lamination structure of a pinned layer, a non-magnetic intermediate layer and a free layer. The pinned layer is made of ferromagnetic material and has a fixed magnetization direction. The non-magnetic intermediate layer is made of non-magnetic conductive material. The free layer is made of ferromagnetic material and changes a magnetization direction by external magnetic field. Electrodes let current flow through the spin valve film in a lamination direction. At least one of the pinned layer and the free layer includes a lamination portion of a first layer and a second layer stacked alternately. The first layer has a composition ratio of elements presenting ferromagnetism higher than that in the second layer. The second layer has a composition ratio of elements presenting non-magnetism higher than that in the first layer. The lamination portion includes at least two first layers and at least one second layer.
摘要翻译：自旋阀膜具有钉扎层，非磁性中间层和自由层的层压结构。钉扎层由铁磁材料制成，具有固定的磁化方向。非磁性中间层由非磁性导电材料制成。自由层由铁磁材料制成，并通过外部磁场改变磁化方向。电极使电流在层叠方向上流过自旋阀膜。被钉扎层和自由层中的至少一个包括交替堆叠的第一层和第二层的层压部分。第一层具有高于第二层中的铁磁性元素的组成比。第二层具有高于第一层中的非磁性元素的组成比。层压部分包括至少两个第一层和至少一个第二层。

3. 发明申请

US20060209473A1 Magnetoresistive element, magnetic head, and magnetic memory apparatus 失效
标题翻译：磁阻元件，磁头和磁存储装置
公开(公告)号：US20060209473A1
公开(公告)日：2006-09-21
申请号：US11156870
申请日：2005-06-20
申请人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/14 , H01F10/30 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.
摘要翻译：公开了一种包括固定磁性层，第一非磁性层，自由磁性层和第二非磁性层的CPP型结构的磁阻元件。磁阻元件包括位于自由磁性层和第一非磁性层之间的第一界面层和位于自由磁性层和第二非磁性层之间的第二界面层。第一界面层和第二界面层包括主要具有CoNiFe的材料。

4. 发明申请

US20070048485A1 Magnetoresistive effect element, magnetic head, magnetic storage device and magnetic memory device 审中-公开
标题翻译：磁阻效应元件，磁头，磁存储器件和磁存储器件
公开(公告)号：US20070048485A1
公开(公告)日：2007-03-01
申请号：US11437757
申请日：2006-05-22
申请人： Arata Jogo , Hirotaka Oshima , Keiichi Nagasaka
发明人： Arata Jogo , Hirotaka Oshima , Keiichi Nagasaka
IPC分类号： B32B3/02
CPC分类号： H01F10/16 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01L27/228 , H01L43/10 , Y10T428/21
摘要： A magnetoresistive effect element of a CPP type includes a fixed magnetization layer, a non-magnetic layer and a free magnetization layer formed of CoFeAl. The CoFeAl has a composition falling within a range defined by straight lines connecting points A, B, C, D, E, F and A, in that order, in a ternary composition diagram. The point A is (55, 10, 35), the point B is (50, 15, 35), the point C is (50, 20, 30), the point D is (55, 25, 20), the point E is (60, 25, 15), and the point F is (70, 15, 15), where coordinates of the composition of each point is represented by (Co content, Fe content, Al content). Each content is expressed by atomic percent.
摘要翻译： CPP型的磁阻效应元件包括固定磁化层，非磁性层和由CoFeAl形成的自由磁化层。 CoFeAl具有在三元组成图中按顺序连接点A，B，C，D，E，F和A的直线限定的范围内的组成。点A是（55,10,35），点B是（50,15,35），点C是（50,20,30），点D是（55,25,20），点 E是（60,25,15），点F是（70,15,15），其中每个点的组成坐标由（Co含量，Fe含量，Al含量）表示。每个内容以原子百分比表示。

5. 发明授权

US07486487B2 Magneto-resistive element, magnetic head and magnetic storage apparatus 失效
标题翻译：磁阻元件，磁头和磁存储装置
公开(公告)号：US07486487B2
公开(公告)日：2009-02-03
申请号：US11137008
申请日：2005-05-25
申请人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996 , H01F10/14 , H01F10/20 , H01F10/3272 , H01F10/3295
摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.
摘要翻译：磁阻元件采用CPP结构，并包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻控制层由导电铁磁氧化物制成。

6. 发明授权

US07428130B2 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
标题翻译：磁阻元件，磁头，磁存储单元和磁存储单元
公开(公告)号：US07428130B2
公开(公告)日：2008-09-23
申请号：US11410315
申请日：2006-04-25
申请人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
发明人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译：包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。自由磁化层包括CoMnAl。在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20），点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

7. 发明申请

US20070268632A1 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
标题翻译：磁阻元件，磁头，磁存储单元和磁存储单元
公开(公告)号：US20070268632A1
公开(公告)日：2007-11-22
申请号：US11410315
申请日：2006-04-25
申请人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
发明人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
IPC分类号： G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译：包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。自由磁化层包括CoMnAl。在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20），点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

8. 发明申请

US20050264953A1 Magneto-resistive element, magnetic head and megnetic storage apparatus 失效
标题翻译：磁阻元件，磁头和储能装置
公开(公告)号：US20050264953A1
公开(公告)日：2005-12-01
申请号：US11137008
申请日：2005-05-25
申请人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39 , H01F10/14 , H01F10/20 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996 , H01F10/14 , H01F10/20 , H01F10/3272 , H01F10/3295
摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.
摘要翻译：磁阻元件采用CPP结构，并且包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻控制层由导电铁磁氧化物制成。

9. 发明申请

US20080198514A1 Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory 审中-公开
标题翻译：磁阻装置，磁头，磁存储装置和磁存储器
公开(公告)号：US20080198514A1
公开(公告)日：2008-08-21
申请号：US12068892
申请日：2008-02-13
申请人： Arata Jogo , Yutaka Shimizu
发明人： Arata Jogo , Yutaka Shimizu
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： A CPP-type magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, and a non-magnetic layer provided between the magnetization pinned layer and the magnetization free layer. At least one of the magnetization free layer and the magnetization pinned layer is formed of CoFeGe, and the CoFeGe has a composition falling within a range defined by line segments connecting coordinate points A, B, C, and D in a ternary composition diagram where the point A is (42.5, 30, 27.5), the point B is (35, 52.5, 12.5), the point C is (57.5, 30.0, 12.5), and the point D is (45.0, 27.5, 27.5), and where each of the coordinate points is represented by content percentage of (Co, Fe, Ge) expressed by atomic percent (at. %).
摘要翻译： CPP型磁阻器件包括磁化钉扎层，磁化自由层和设置在磁化钉扎层和无磁化层之间的非磁性层。磁化自由层和磁化固定层中的至少一个由CoFeGe形成，并且CoFeGe具有落在由三元组成图中连接坐标点A，B，C和D的线段限定的范围内的组成，其中点A为（42.5,30,27.5），点B为（35,52.5,12.5），点C为（57.5,30.0,12.5），点D为（45.0,27.5,27.5），其中每个坐标点由以原子百分比表示的（Co，Fe，Ge）的含量百分比表示（at。％）。

10. 发明申请

US20090141410A1 CURRENT-PERPENDICULAR-TO-THE-PLANE STRUCTURE MAGNETORESISTIVE ELEMENT AND METHOD OF MAKING THE SAME AND STORAGE APPARATUS 审中-公开
标题翻译：电流 - 平面结构磁阻元件及其制造方法和储存装置
公开(公告)号：US20090141410A1
公开(公告)日：2009-06-04
申请号：US12209824
申请日：2008-09-12
申请人： Arata Jogo , Takahiro Ibusuki , Yutaka Shimizu
发明人： Arata Jogo , Takahiro Ibusuki , Yutaka Shimizu
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An electrically-conductive or insulating non-magnetic intermediate layer is inserted between a free magnetic layer and a pinned magnetic layer in a current-perpendicular-to-the-plane (CPP) structure magnetoresistive element. At least one of the free magnetic layer and the pinned magnetic layer is made of a nitrided magnetic metal alloy. This nitrided magnetic layers allows the CPP structure magnetoresistive element to enjoy an increased magnetoresistance change (ΔRA). In addition, the saturation magnetic flux density (Bs) decreases in a nitrided magnetic metal alloy. The inversion of magnetization is thus easily caused in the low Bs magnetic layer. The detection sensitivity of the CPP structure magnetoresistive element is improved. The CPP structure magnetoresistive element is thus allowed to detect magnetic bit data with higher accuracy.
摘要翻译：在电流垂直于平面（CPP）结构的磁阻元件中，在自由磁性层和被钉扎的磁性层之间插入导电或绝缘的非磁性中间层。自由磁性层和被钉扎磁性层中的至少一个由氮化磁性金属合金制成。这种氮化磁性层允许CPP结构磁阻元件享受增加的磁阻变化（DeltaRA）。此外，氮化磁性金属合金中的饱和磁通密度（Bs）也减小。因此，在低Bs磁性层中容易引起磁化反转。提高了CPP结构磁阻元件的检测灵敏度。因此，CPP结构磁阻元件能够以更高的精度检测磁位数据。

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