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1. 发明申请

US20050264953A1 Magneto-resistive element, magnetic head and megnetic storage apparatus 失效
标题翻译：磁阻元件，磁头和储能装置
公开(公告)号：US20050264953A1
公开(公告)日：2005-12-01
申请号：US11137008
申请日：2005-05-25
申请人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39 , H01F10/14 , H01F10/20 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996 , H01F10/14 , H01F10/20 , H01F10/3272 , H01F10/3295
摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.
摘要翻译：磁阻元件采用CPP结构，并且包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻控制层由导电铁磁氧化物制成。

2. 发明授权

US07486487B2 Magneto-resistive element, magnetic head and magnetic storage apparatus 失效
标题翻译：磁阻元件，磁头和磁存储装置
公开(公告)号：US07486487B2
公开(公告)日：2009-02-03
申请号：US11137008
申请日：2005-05-25
申请人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996 , H01F10/14 , H01F10/20 , H01F10/3272 , H01F10/3295
摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.
摘要翻译：磁阻元件采用CPP结构，并包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻控制层由导电铁磁氧化物制成。

3. 发明授权

US07450351B2 Magnetoresistive element having current-perpendicular-to-plane structure, magnetic head, and magnetic memory apparatus thereof 失效
标题翻译：具有电流 - 垂直于平面结构的磁阻元件，磁头及其磁存储装置
公开(公告)号：US07450351B2
公开(公告)日：2008-11-11
申请号：US11156870
申请日：2005-06-20
申请人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/14 , H01F10/30 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.
摘要翻译：公开了一种包括固定磁性层，第一非磁性层，自由磁性层和第二非磁性层的CPP型结构的磁阻元件。磁阻元件包括位于自由磁性层和第一非磁性层之间的第一界面层和位于自由磁性层和第二非磁性层之间的第二界面层。第一界面层和第二界面层包括主要具有CoNiFe的材料。

4. 发明申请

US20060209473A1 Magnetoresistive element, magnetic head, and magnetic memory apparatus 失效
标题翻译：磁阻元件，磁头和磁存储装置
公开(公告)号：US20060209473A1
公开(公告)日：2006-09-21
申请号：US11156870
申请日：2005-06-20
申请人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/14 , H01F10/30 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.
摘要翻译：公开了一种包括固定磁性层，第一非磁性层，自由磁性层和第二非磁性层的CPP型结构的磁阻元件。磁阻元件包括位于自由磁性层和第一非磁性层之间的第一界面层和位于自由磁性层和第二非磁性层之间的第二界面层。第一界面层和第二界面层包括主要具有CoNiFe的材料。

5. 发明授权

US07428130B2 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
标题翻译：磁阻元件，磁头，磁存储单元和磁存储单元
公开(公告)号：US07428130B2
公开(公告)日：2008-09-23
申请号：US11410315
申请日：2006-04-25
申请人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
发明人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译：包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。自由磁化层包括CoMnAl。在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20），点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

6. 发明申请

US20070268632A1 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
标题翻译：磁阻元件，磁头，磁存储单元和磁存储单元
公开(公告)号：US20070268632A1
公开(公告)日：2007-11-22
申请号：US11410315
申请日：2006-04-25
申请人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
发明人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
IPC分类号： G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译：包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。自由磁化层包括CoMnAl。在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20），点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

7. 发明申请

US20070217083A1 Magnetoresistive effect device and method of manufacturing ferromagnetic structure 审中-公开
标题翻译：磁阻效应器件及制造铁磁结构的方法
公开(公告)号：US20070217083A1
公开(公告)日：2007-09-20
申请号：US11483565
申请日：2006-07-11
申请人： Keiichi Nagasaka , Hirotaka Oshima , Arata Jogo , Yutaka Shimizu
发明人： Keiichi Nagasaka , Hirotaka Oshima , Arata Jogo , Yutaka Shimizu
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A spin valve film has a lamination structure of a pinned layer, a non-magnetic intermediate layer and a free layer. The pinned layer is made of ferromagnetic material and has a fixed magnetization direction. The non-magnetic intermediate layer is made of non-magnetic conductive material. The free layer is made of ferromagnetic material and changes a magnetization direction by external magnetic field. Electrodes let current flow through the spin valve film in a lamination direction. At least one of the pinned layer and the free layer includes a lamination portion of a first layer and a second layer stacked alternately. The first layer has a composition ratio of elements presenting ferromagnetism higher than that in the second layer. The second layer has a composition ratio of elements presenting non-magnetism higher than that in the first layer. The lamination portion includes at least two first layers and at least one second layer.
摘要翻译：自旋阀膜具有钉扎层，非磁性中间层和自由层的层压结构。钉扎层由铁磁材料制成，具有固定的磁化方向。非磁性中间层由非磁性导电材料制成。自由层由铁磁材料制成，并通过外部磁场改变磁化方向。电极使电流在层叠方向上流过自旋阀膜。被钉扎层和自由层中的至少一个包括交替堆叠的第一层和第二层的层压部分。第一层具有高于第二层中的铁磁性元素的组成比。第二层具有高于第一层中的非磁性元素的组成比。层压部分包括至少两个第一层和至少一个第二层。

8. 发明授权

US07068475B2 Magnetic head having a flux-guide regulating film regulating a magnetic domain of a flux guide 失效
公开(公告)号：US07068475B2
公开(公告)日：2006-06-27
申请号：US09883899
申请日：2001-06-18
申请人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
发明人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3113 , G11B5/3909 , G11B5/3916 , G11B5/3932 , G11B2005/3996
摘要： A magnetic head is provided. The magnetic head comprises a magnetoresistance film, a flux guide, and a flux-guide regulating film. The flux guide guides a signal magnetic field from a magnetic recording medium to the magnetoresistance film. The flux-guide regulating film aligns magnetic domains of the flux guide into a single magnetic domain.

9. 发明申请

US20050280952A1 Magnetoresistive head 失效
标题翻译：磁阻头
公开(公告)号：US20050280952A1
公开(公告)日：2005-12-22
申请号：US10974640
申请日：2004-10-27
申请人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
发明人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G11B5/3903 , G11B5/3912
摘要： A magnetoresistive head includes a first magnetic shield, a first electrode terminal arranged on the first magnetic shield at an entry side of a magnetic field from a carrier, a third electrode terminal that is spaced from the first electrode terminal, and arranged on the first magnetic shield at a side opposite to the entry side of the magnetic field from the carrier, a magnetoresistive coating arranged on the first and third electrode terminals, a second electrode terminal that is arranged on the magnetoresistive coating, and opposed to the first electrode terminal, a second magnetic shield arranged on the second electrode terminal, and a sense current source connected to the first and second electrode terminals, which applies sense current in a direction perpendicular to a coating surface of the magnetoresistive coating.
摘要翻译：磁阻头包括第一磁屏蔽，在离开载体的磁场入口侧设置在第一磁屏蔽上的第一电极端子，与第一电极端子间隔开的第三电极端子，并且布置在第一磁屏蔽上屏蔽在与载体的磁场入口侧相对的一侧，布置在第一和第三电极端子上的磁阻涂层，布置在磁阻涂层上并与第一电极端子相对的第二电极端子，布置在第二电极端子上的第二磁屏蔽和连接到第一和第二电极端子的感测电流源，其在垂直于磁阻涂层的涂层表面的方向上施加感测电流。

10. 发明申请

US20050099737A1 Current-perpendicular-to-the-plane structure magnetoresistive element and head slider including the same 审中-公开
标题翻译：电流垂直于平面的结构磁阻元件和包括其的磁头滑块
公开(公告)号：US20050099737A1
公开(公告)日：2005-05-12
申请号：US11022733
申请日：2004-12-27
申请人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
发明人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/39 , H01F10/32 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , G11B5/3912 , H01F10/3268
摘要： A magnetoresistive film extends along a datum plane intersecting with a medium-opposed surface. A non-magnetic body extends along the datum plane at a location adjacent the magneto resistive film. A so-called magnetic domain controlling films are omitted. The inventors have found that a sufficient magnetization can be established in a predetermined direction along the medium-opposed surface in the CPP structure magnetoresistive element based on the current magnetic field. As long as the quantity of the heat generated, namely of the electric power is maintained constant, the magnetic field of a sufficient intensity can be established in the free magnetic layer. The direction of the magnetization can easily be controlled in a facilitated manner.
摘要翻译：磁阻膜沿着与介质相对表面相交的基准平面延伸。非磁性体在与磁阻薄膜相邻的位置沿基准平面延伸。省略了所谓的磁畴控制膜。本发明人已经发现，基于电流磁场，可以沿着CPP结构磁阻元件中的中间相对表面沿预定方向建立足够的磁化强度。只要产生的热量，即电力的量保持恒定，则可以在自由磁层中建立足够强度的磁场。容易地控制磁化方向。

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