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    • 6. 发明申请
    • GALLIUM NITRIDE-BASED FLIP-CHIP LIGHT-EMITTING DIODE WITH DOUBLE REFLECTIVE LAYERS ON ITS SIDE AND FABRICATION METHOD THEREOF
    • 基于氮化钛的双向反射层的闪烁二极管发光二极管及其制造方法
    • US20110297914A1
    • 2011-12-08
    • US13153152
    • 2011-06-03
    • Jiansen ZHENGSuhui LINAnhe HEKechuang LIN
    • Jiansen ZHENGSuhui LINAnhe HEKechuang LIN
    • H01L33/06
    • H01L33/46H01L33/20H01L33/42
    • The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer stacked on the sapphire substrate in that order; a transparent conductive layer formed on the P-GaN layer; a distributed Bragg reflector formed over a side of the epitaxial layer and the transparent conductive layer; a metal reflective layer formed on the DBR; a P-type ohmic contact electrode formed on the transparent conductive layer; and an N-type ohmic contact electrode formed on the exposed N-GaN layer, wherein the P-type ohmic contact electrode and the N-type ohmic contact electrode are bonded to a heat dissipation substrate through a metal conductive layer and a ball bonder. By arranging a double reflection structure including a DBR and a metal reflective layer on the sloping side of the LED chip, the good reflectivity of the reflective layers can be fully utilized, thereby improving the light-emission efficiency of the LED.
    • 本发明公开了一种双面反射层氮化镓系倒装芯片发光二极管及其制造方法,所述双反射层氮化镓系倒装芯片发光二极管在其一侧具有分布式布拉格反射器和金属反射层。 发光二极管包括:蓝宝石衬底; 缓冲层,N-GaN层,多量子阱层和P-GaN层,依次层叠在蓝宝石基板上。 形成在P-GaN层上的透明导电层; 形成在外延层和透明导电层的一侧上的分布式布拉格反射器; 形成在DBR上的金属反射层; 形成在所述透明导电层上的P型欧姆接触电极; 以及形成在所述露出的N-GaN层上的N型欧姆接触电极,其中所述P型欧姆接触电极和所述N型欧姆接触电极通过金属导电层和球接合剂接合到散热基板。 通过在LED芯片的倾斜侧设置包括DBR和金属反射层的双反射结构,可以充分利用反射层的良好的反射率,从而提高LED的发光效率。