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    • 2. 发明申请
    • METHOD OF MANUFACTURING A BISTABLE MICROELECTRONIC SWITCH STACK
    • 制造微电子开关堆栈的方法
    • US20080152792A1
    • 2008-06-26
    • US11614472
    • 2006-12-21
    • Ke K. LianMarc K. Chason
    • Ke K. LianMarc K. Chason
    • B05D5/12
    • H01L51/0004H01L51/0037H01L51/0083H01L51/0575
    • A stack for a bistable microelectronic switch is fabricated by providing a first metal electrode on a supporting substrate. A bistable macrocyclic compound is printed over the first electrode using a high speed printing process. A conductive polymer is then printed over the bistable macrocyclic compound using a high speed printing process, and a second electrode is then formed on the conductive polymer. Copper phthalocyanine is one bistable compound, and a combination of poly-(3,4-ethylenedioxythiophene) and poly-(styrenesulphonic acid) is the conductive polymer. The upper and lower electrodes are formed in a crossbar formation to create an addressable random access memory device. When a voltage less than a switching voltage is applied between two intersecting electrodes, the resistance is very high, and when a voltage greater than the switching voltage is applied, the resistance is generally two orders of magnitude lower.
    • 通过在支撑衬底上设置第一金属电极来制造用于双稳态微电子开关的堆叠。 使用高速印刷方法将双稳态大环化合物印刷在第一电极上。 然后使用高速印刷方法将导电聚合物印刷在双稳态大环化合物上,然后在导电聚合物上形成第二电极。 铜酞菁是一种双稳态化合物,聚(3,4-亚乙基二氧噻吩)和聚(苯乙烯磺酸)的组合是导电聚合物。 上电极和下电极形成在横梁结构中以产生可寻址随机存取存储器件。 当在两个相交电极之间施加小于开关电压的电压时,电阻非常高,当施加大于开关电压的电压时,电阻通常比两个数量级更低。
    • 3. 发明授权
    • Hermetically sealed interface
    • 密封接口
    • US5173836A
    • 1992-12-22
    • US846109
    • 1992-03-05
    • Joseph P. TomaseShiuh-Hui ChenGregory D. StammMarc K. Chason
    • Joseph P. TomaseShiuh-Hui ChenGregory D. StammMarc K. Chason
    • G01L9/00
    • G01L9/0042Y10T29/43
    • A hermetically sealed interface is constructed with a substrate (101) having a first surface (103) with a first orifice (201). The substrate (101) also has an opposing second surface (105) with a second orifice (205). The first and second orifices (201, 205) are connected via a passageway (107). The passageway (107) has an inner surface (209) with a first metal coating (111). The first metal coating (111) and the substrate (101) provide a first predetermined thermal coefficient of expansion for the passageway (107). A plug (221) with an outer surface (223) has a second metal coating (225). The second metal coating (225) and the plug (221) provide a second predetermined thermal coefficient of expansion substantially similar to the first predetermined thermal coefficient of expansion of the passageway (107). The plug (221) is disposed in the passageway (107) of the substrate (101). The first metal coating (111), of the inner surface ( 209) of the passageway (107), and the second metal coating (225), of the outer surface (223) of the plug (221), are bonded together and provide, with the plug, (221) a hermetic barrier between the first and second orifices (201, 205) of the substrate (101). Preferably, this hermetically sealed interface is used in a capacitive pressure sensor.
    • 密封界面由具有第一孔(101)的第一表面(103)的基底(101)构成。 衬底(101)还具有带有第二孔口(205)的相对的第二表面(105)。 第一和第二孔(201,205)经由通道(107)连接。 通道(107)具有带有第一金属涂层(111)的内表面(209)。 第一金属涂层(111)和基板(101)为通道(107)提供第一预定的热膨胀系数。 具有外表面(223)的插头(221)具有第二金属涂层(225)。 第二金属涂层(225)和插塞(221)提供基本上类似于通道(107)的第一预定热膨胀系数的第二预定热膨胀系数。 插头(221)设置在基板(101)的通路(107)中。 插头(221)的外表面(223)的通道(107)的内表面(209)和第二金属涂层(225)的第一金属涂层(111)结合在一起并提供 ,其中所述插头(221)在所述基板(101)的所述第一和第二孔(201,205)之间具有密封屏障。 优选地,该密封接口用于电容式压力传感器。