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    • 1. 发明授权
    • Reflective mask blank for EUV lithography and mask for EUV lithography
    • 用于EUV光刻的反射掩模板和用于EUV光刻的掩模
    • US08168352B2
    • 2012-05-01
    • US13004081
    • 2011-01-11
    • Kazuyuki HayashiToshiyuki UnoKen Ebihara
    • Kazuyuki HayashiToshiyuki UnoKen Ebihara
    • G03F1/00
    • G03F1/24B82Y10/00B82Y40/00
    • Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask.A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.
    • 提供EUV掩模,从而抑制来自掩模图案区域外的区域的反射光的影响,以及用于生产这种EUV掩模的EUV掩模空白。 一种用于EUV光刻(EUVL)的反射掩模,包括具有掩模图案区域的衬底和位于掩模图案区域外部的EUV光吸收区域; 反射层,设置在用于反射EUV光的基板的掩模图案区域上,并且具有其上存在吸收体层的部分和不存在吸收层的部分; 存在吸收层的部分和没有吸收层的部分被布置成构成掩模图案; 其中用于EUV光的吸收体层的表面的反射率为5〜15%,EUV光的EUV吸光区域的表面的反射率为1%以下。
    • 4. 发明申请
    • REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND MASK FOR EUV LITHOGRAPHY
    • EUV LITHOGRAPHY的EUV地图和掩码的反射掩模空白
    • US20110104595A1
    • 2011-05-05
    • US13004081
    • 2011-01-11
    • Kazuyuki HAYASHIToshiyuki UnoKen Ebihara
    • Kazuyuki HAYASHIToshiyuki UnoKen Ebihara
    • G03F1/00G03F7/20
    • G03F1/24B82Y10/00B82Y40/00
    • Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask.A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.
    • 提供EUV掩模,从而抑制来自掩模图案区域外的区域的反射光的影响,以及用于生产这种EUV掩模的EUV掩模空白。 一种用于EUV光刻(EUVL)的反射掩模,包括具有掩模图案区域的衬底和位于掩模图案区域外部的EUV光吸收区域; 反射层,设置在用于反射EUV光的基板的掩模图案区域上,并且具有其上存在吸收体层的部分和不存在吸收层的部分; 存在吸收层的部分和没有吸收层的部分被布置成构成掩模图案; 其中用于EUV光的吸收体层的表面的反射率为5〜15%,EUV光的EUV吸光区域的表面的反射率为1%以下。
    • 7. 发明授权
    • Reflective-type mask blank for EUV lithography
    • EUV光刻用反射型掩模板
    • US07678511B2
    • 2010-03-16
    • US11330205
    • 2006-01-12
    • Yoshiaki IkutaToshiyuki UnoKen Ebihara
    • Yoshiaki IkutaToshiyuki UnoKen Ebihara
    • G03F1/00
    • G03F1/24B82Y10/00B82Y40/00G03F1/38G03F1/40G03F7/70708G21K2201/067Y10T428/31616
    • There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate.A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.
    • 提供了具有反射层和EUV掩模坯料的基板,其可以防止颗粒在其形成期间粘附到反射层或吸收层的表面,或者通过消除反射层或吸收层之间的电连接 形成在基板的前表面上的膜和形成在基板的后表面上的膜。 具有反射层的基板,其可用于制造用于EUV光刻的反射掩模板,包括形成在与形成在其上的反射层相反的表面的后表面上的夹持层,夹持层用于卡盘并支撑基板, 静电卡盘,其中反射层与夹持层没有电连接。
    • 8. 发明授权
    • Reflective-type mask blank for EUV lithography
    • EUV光刻用反射型掩模板
    • US07960077B2
    • 2011-06-14
    • US12694860
    • 2010-01-27
    • Yoshiaki IkutaToshiyuki UnoKen Ebihara
    • Yoshiaki IkutaToshiyuki UnoKen Ebihara
    • G03F1/00
    • G03F1/24B82Y10/00B82Y40/00G03F1/38G03F1/40G03F7/70708G21K2201/067Y10T428/31616
    • A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.
    • 一种用于EUV光刻的反射掩模板,包括具有前表面和后表面的基板,形成在基板的前表面上的反射层,形成在反射层上的吸收层,以及形成在反射层的后表面上的夹持层 基板并定位成将基板夹持到静电卡盘。 衬底具有不导电部分,其消除了反射层和夹持层之间的电传导以及吸收层和夹持层之间的电传导,并且非导电部分通过形成覆盖有一个衬底的衬底的一部分而形成 或更多的覆盖构件,并且防止反射层和吸收层的形成。