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1. 发明授权

US08130253B2 Composite semiconductor device, print head and image forming apparatus 有权
标题翻译：复合半导体器件，打印头和成像设备
公开(公告)号：US08130253B2
公开(公告)日：2012-03-06
申请号：US12457019
申请日：2009-05-29
申请人： Kazuya Ohkawa , Shinya Jyumonji , Masumi Taninaka , Hiroshi Hamano , Masumi Koizumi
发明人： Kazuya Ohkawa , Shinya Jyumonji , Masumi Taninaka , Hiroshi Hamano , Masumi Koizumi
IPC分类号： B41J2/45 , H01L21/00
CPC分类号： B41J2/45 , B41J2202/50 , H01L21/78
摘要： A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.
摘要翻译：复合半导体器件由半导体晶片形成，半导体晶片具有形成半导体元件的多个器件形成区域和限定在器件形成区域之间的切割区域，并且通过在切割区域切割半导体晶片而形成。复合半导体器件包括半导体衬底和层叠在半导体衬底上的多个布线层。布线层至少包括导电膜。形成连接部，在配线层的层叠方向上连接布线层。每个连接部分相对于在切割区域中限定的切割位置设置在装置形成区域侧。

2. 发明申请

US20090322852A1 Composite semiconductor device, print head and image forming apparatus 有权
标题翻译：复合半导体器件，打印头和成像设备
公开(公告)号：US20090322852A1
公开(公告)日：2009-12-31
申请号：US12457019
申请日：2009-05-29
申请人： Kazuya Ohkawa , Shinya Jyumonji , Masumi Taninaka , Hiroshi Hamano , Masumi Koizumi
发明人： Kazuya Ohkawa , Shinya Jyumonji , Masumi Taninaka , Hiroshi Hamano , Masumi Koizumi
IPC分类号： B41J27/00 , H01L23/48
CPC分类号： B41J2/45 , B41J2202/50 , H01L21/78
摘要： A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.
摘要翻译：复合半导体器件由半导体晶片形成，半导体晶片具有形成半导体元件的多个器件形成区域和限定在器件形成区域之间的切割区域，并且通过在切割区域切割半导体晶片而形成。复合半导体器件包括半导体衬底和层叠在半导体衬底上的多个布线层。布线层至少包括导电膜。形成连接部，在配线层的层叠方向上连接布线层。每个连接部分相对于在切割区域中限定的切割位置设置在装置形成区域侧。

3. 发明授权

US06858875B2 Light-emitting-element array 有权
标题翻译：发光元件阵列
公开(公告)号：US06858875B2
公开(公告)日：2005-02-22
申请号：US10630936
申请日：2003-07-31
申请人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
发明人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
IPC分类号： H01L23/12 , B41J2/45 , H01L27/15 , H01L33/08 , H01L33/30 , H01L33/48 , H01L33/00 , H01L21/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer into a first region and a remaining region, and divides the array of light-emitting elements into segments disposed alternately in these two regions, each segment preferably including one or two light-emitting elements. A first shared interconnecting pad is electrically coupled to the light-emitting elements in the first region by electrical paths not crossing the isolation trench. A second shared interconnecting pad is electrically coupled to light-emitting elements in the remaining semiconductor region by electrical paths crossing the isolation trench. The array can then be driven by a number of separate interconnecting pads equal to half the number of the light-emitting elements.
摘要翻译：发光元件阵列具有形成在电流阻挡层上的半导体层。通过不同导电类型的杂质的扩散在半导体层中形成发光元件。隔离沟槽将半导体层划分成第一区域和剩余区域，并且将发光元件阵列分成交替布置在这两个区域中的区段，每个区段优选地包括一个或两个发光元件。第一共享互连焊盘通过不穿过隔离沟槽的电路径电耦合到第一区域中的发光元件。第二共享互连焊盘通过穿过隔离沟槽的电路径电耦合到剩余半导体区域中的发光元件。阵列然后可以由等于发光元件数量的一半的多个单独的互连焊盘驱动。

4. 发明授权

US07847304B2 LED array, LED head and image recording apparatus 有权
标题翻译： LED阵列，LED头和图像记录装置
公开(公告)号：US07847304B2
公开(公告)日：2010-12-07
申请号：US11692249
申请日：2007-03-28
申请人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
发明人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
IPC分类号： H01L29/201
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： An LED array includes a semiconductor substrate and a plurality of first LED portions formed integrally on a surface of the semiconductor substrate. The first LED portions emit light of a predetermined color. The LED array includes a plurality of second LED portions fixed to the semiconductor substrate and are disposed corresponding to the first LED portions. The second LED portions emit light whose color is different from the first LED portions. The second LED portions are so disposed that active layers of the second LED portions are substantially at the same height as active layers of the first LED portions.
摘要翻译： LED阵列包括半导体衬底和整体地形成在半导体衬底的表面上的多个第一LED部分。第一LED部分发射预定颜色的光。 LED阵列包括固定到半导体衬底的多个第二LED部分，并且对应于第一LED部分设置。第二LED部分发光，其颜色不同于第一LED部分。第二LED部分被布置成使得第二LED部分的有源层与第一LED部分的有源层基本上处于相同的高度。

5. 发明申请

US20070228397A1 LED ARRAY, LED HEAD AND IMAGE RECORDING APPARATUS 有权
标题翻译： LED阵列，LED头和图像记录装置
公开(公告)号：US20070228397A1
公开(公告)日：2007-10-04
申请号：US11692249
申请日：2007-03-28
申请人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
发明人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
IPC分类号： H01L33/00
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： An LED array includes a semiconductor substrate and a plurality of first LED portions formed integrally on a surface of the semiconductor substrate. The first LED portions emit light of a predetermined color. The LED array includes a plurality of second LED portions fixed to the semiconductor substrate and are disposed corresponding to the first LED portions. The second LED portions emit light whose color is different from the first LED portions The second LED portions are so disposed that active layers of the second LED portions are substantially at the same height as active layers of the first LED portions.
摘要翻译： LED阵列包括半导体衬底和整体地形成在半导体衬底的表面上的多个第一LED部分。第一LED部分发射预定颜色的光。 LED阵列包括固定到半导体衬底的多个第二LED部分，并且对应于第一LED部分设置。第二LED部分发射其颜色不同于第一LED部分的光。第二LED部分被布置成使得第二LED部分的有源层与第一LED部分的有源层基本上处于相同的高度。

6. 发明授权

US06781246B2 Semiconductor array device with single interconnection layer 有权
公开(公告)号：US06781246B2
公开(公告)日：2004-08-24
申请号：US10631893
申请日：2003-08-01
申请人： Hiroyuki Fujiwara , Masumi Taninaka , Susumu Ozawa , Masumi Koizumi
发明人： Hiroyuki Fujiwara , Masumi Taninaka , Susumu Ozawa , Masumi Koizumi
IPC分类号： H01L2348
CPC分类号： B41J2/45 , H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： An array of semiconductor circuit elements such as light-emitting elements includes a semiconductor layer partially covered by a dielectric film. A first interconnecting pad such as a wire-bonding pad is electrically coupled by conductive paths passing through the semiconductor layer to electrodes of a first group of semiconductor circuit elements formed in the semiconductor layer. A second interconnecting pad such as a wire-bonding pad, formed on the dielectric film, is electrically coupled to electrodes of a second group of semiconductor circuit elements formed in the semiconductor layer by conductive paths insulated from the semiconductor layer by the dielectric film. The second conductive paths cross the first conductive paths at points at which the first conductive paths pass through the semiconductor layer, so that only a single layer of metal interconnecting lines is needed.

7. 发明授权

US5955748A End face light emitting type light emitting diode 失效
标题翻译：端面发光型发光二极管
公开(公告)号：US5955748A
公开(公告)日：1999-09-21
申请号：US942302
申请日：1997-10-01
申请人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
发明人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L33/00 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/36 , H01L33/44
CPC分类号： B41J2/45 , H01L33/0008 , H01L33/20 , H01L33/44 , H01L2224/48137 , H01L33/0095
摘要： An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged while a semiconductor wafer is diced to separate light emitting devices from one another. A recess is formed on the semiconductor wafer having a depth which is deeper than the pn-junction. A portion to be cut during dicing of the wafer is vertically and horizontally separated from the pn-junction regions, so that if cracks occur when the wafer is diced, the cracks do not affect the light emitting characteristics of the devices.
摘要翻译：端面发光型LED相对于基板表面具有倾斜的发光侧壁。一种用于制造端面发光型发光器件的方法防止了在将半导体晶片切割以将发光器件彼此分离的同时，器件的pn结区域被损坏。在半导体晶片上形成有比pn结深的深度的凹部。在切割晶片期间待切割的部分与pn结区域垂直和水平分离，使得如果在切割晶片时发生裂纹，则裂纹不会影响器件的发光特性。

8. 发明授权

US5700714A Diffusion mask and fabrication method for forming pn-junction elements in a compound semiconductor substrate 失效
标题翻译：用于在化合物半导体衬底中形成pn结元件的扩散掩模和制造方法
公开(公告)号：US5700714A
公开(公告)日：1997-12-23
申请号：US588890
申请日：1996-01-19
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Koizumi , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Koizumi , Masumi Taninaka
IPC分类号： H01L21/18 , H01L21/22 , H01L21/225 , H01L33/12 , H01L33/32 , H01L21/38
CPC分类号： H01L33/0008 , H01L21/2258
摘要： A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusion mask, diffusing an impurity from the diffusion source film into the substrate, and removing the diffusion source film with buffered hydrofluoric acid. Electrode lines can then be formed directly on the aluminum-nitride diffusion mask, which is not etched by buffered hydrofluoric acid.
摘要翻译：在化合物半导体衬底中通过在衬底的表面上沉积氮化铝膜来形成pn结元件，对氮化铝膜进行图案化以形成扩散掩模，在扩散掩模上沉积扩散源膜，扩散从扩散源膜到基板中的杂质，并用缓冲氢氟酸除去扩散源膜。然后可以直接在不被缓冲氢氟酸腐蚀的氮化铝扩散掩模上形成电极线。

9. 发明授权

US5869848A End face light-emitting-type LED, end face light-emitting-type LED array and methods of manufacturing them 失效
标题翻译：端面发光型LED，端面发光型LED阵列及其制造方法
公开(公告)号：US5869848A
公开(公告)日：1999-02-09
申请号：US762417
申请日：1996-12-09
申请人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi , Aya Yamanaka , Makoto Ishimaru , Yukio Nakamura
发明人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi , Aya Yamanaka , Makoto Ishimaru , Yukio Nakamura
IPC分类号： H01L33/08 , H01L33/16 , H01L33/30 , H01L33/58 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0008 , H01L33/24
摘要： An end face light-emitting-type LED has a first-conductive-type semiconductor substrate and a second-conductive-type diffusion region formed on a first surface of the first-conductive-type semiconductor substrate so as to have a depth within a predetermined value. The first-conductive-type semiconductor substrate has a second surface which meets the first surface at a predetermined angle with the first surface. A junction between the first-conductive-type semiconductor substrate and the second-conductive-type diffusion region includes an inclined portion with regard to the first surface in the vicinity of an edge portion of the junction which is on a side of the second surface, and light emerges from the junction via the second surface.
摘要翻译：端面发光型LED具有形成在第一导电型半导体衬底的第一表面上的第一导电型半导体衬底和第二导电型扩散区，以使其具有预定的深度值。第一导电型半导体衬底具有与第一表面成预定角度相交的第二表面。第一导电型半导体基板和第二导电型扩散区域之间的接合部包括在第二表面侧的接合部的边缘部附近的第一面的倾斜部，并且光从接合处经由第二表面出射。

10. 发明授权

US5225364A Method of fabricating a thin-film transistor matrix for an active matrix display panel 失效
标题翻译：用于制作活性矩阵显示面板的薄膜晶体管矩阵的方法
公开(公告)号：US5225364A
公开(公告)日：1993-07-06
申请号：US706267
申请日：1991-05-28
申请人： Tsutomu Nomoto , Masumi Koizumi , Akihiko Nishiki
发明人： Tsutomu Nomoto , Masumi Koizumi , Akihiko Nishiki
IPC分类号： G02F1/1362 , H01L29/49 , H01L29/786
CPC分类号： H01L29/4908 , G02F1/1362 , H01L29/78669 , H01L29/78678
摘要： A TFT matrix for an active matrix display panel has a plurality of TFTs arranged in rows and columns to form a matrix array. Each of the TFT has a control electrode on a dielectric substrate, a first insulator film formed on the control electrode, a second insulator film formed on the first insulator film, a-Si semiconductor layer formed on the second insulator film, and first and second (drain and source) electrodes formed on the a-Si semiconductor layer. The matrix has a plurality of transparent electrodes that contact the second electrodes, row interconnection layers interconnecting the control electrodes of the TFTs of the respective rows, and column interconnection layers interconnecting the first electrodes of the TFTs of the respective columns. The control electrodes and the row interconnection layers (gate electrodes) are made of an alloy of tantalum with tungsten, nickel, cobalt, rhodium, or iridium. The first insulator is formed by anodizing the surface of the gate electrode. The gate electrode has low resistance, improving the quality of the display without impairing insulation performance.
摘要翻译：用于有源矩阵显示面板的TFT矩阵具有排列成行和列的多个TFT，以形成矩阵阵列。每个TFT在电介质基板上具有控制电极，形成在控制电极上的第一绝缘膜，形成在第一绝缘膜上的第二绝缘膜，形成在第二绝缘膜上的a-Si半导体层，以及第一和第二绝缘膜（漏极和源极）电极形成在a-Si半导体层上。该矩阵具有与第二电极接触的多个透明电极，将各行的TFT的控制电极互连的行互连层和互连各列的TFT的第一电极的列互连层。控制电极和行互连层（栅电极）由钽与钨，镍，钴，铑或铱的合金制成。第一绝缘体通过阳极氧化栅电极的表面而形成。栅电极具有低电阻，提高显示器的质量而不损害绝缘性能。

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