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    • 1. 发明授权
    • Thin-film transistor matrix for active matrix display panel with alloy
electrodes
    • 具有合金电极的有源矩阵显示面板的薄膜晶体管矩阵
    • US5070379A
    • 1991-12-03
    • US540624
    • 1990-06-19
    • Tsutomu NomotoMasumi KoizumiAkihiko Nishiki
    • Tsutomu NomotoMasumi KoizumiAkihiko Nishiki
    • G02F1/136G02F1/1362G02F1/1368H01L21/336H01L27/12H01L29/49H01L29/78H01L29/786
    • G02F1/1362H01L29/4908H01L29/78669
    • A TFT matrix for an active matrix display panel has a plurality of TFTs arranged in rows and columns to form a matrix array. Each of the TFT has a control electrode on a dielectric substrate, a first insulator film formed on the control electrode, a second insulator film formed on the first insulator film, a-Si semiconductor layer formed on the second insulator film, and first and second (drain and source) electrodes formed on the a-Si semiconductor layer. The matrix has a plurality of transparent electrodes that contact the second electrodes, row interconnection layers interconnecting the control electrodes of the TFTs of the respective rows, and column interconnection layers interconnecting the first electrodes of the TFTs of the respective columns. The control electrodes and the row interconnection layers (gate electrodes) are made of an alloy of tantalum with tungsten, nickel, cobalt, rhodium, or iridium. The first insulator is formed by anodizing the surface of the gate electrode. The gate electrode has low resistance, improving the quality of the display without impairing insulation performance.
    • 用于有源矩阵显示面板的TFT矩阵具有排列成行和列的多个TFT,以形成矩阵阵列。 每个TFT在电介质基板上具有控制电极,形成在控制电极上的第一绝缘膜,形成在第一绝缘膜上的第二绝缘膜,形成在第二绝缘膜上的a-Si半导体层,以及第一和第二绝缘膜 (漏极和源极)电极形成在a-Si半导体层上。 该矩阵具有接触第二电极的多个透明电极,互连各行TFT的控制电极的行互连层和互连各列的TFT的第一电极的列互连层。 控制电极和行互连层(栅电极)由钽与钨,镍,钴,铑或铱的合金制成。 第一绝缘体通过阳极氧化栅电极的表面而形成。 栅电极具有低电阻,提高显示器的质量而不损害绝缘性能。
    • 2. 发明授权
    • Method of fabricating a thin-film transistor matrix for an active matrix
display panel
    • 用于制作活性矩阵显示面板的薄膜晶体管矩阵的方法
    • US5225364A
    • 1993-07-06
    • US706267
    • 1991-05-28
    • Tsutomu NomotoMasumi KoizumiAkihiko Nishiki
    • Tsutomu NomotoMasumi KoizumiAkihiko Nishiki
    • G02F1/1362H01L29/49H01L29/786
    • H01L29/4908G02F1/1362H01L29/78669H01L29/78678
    • A TFT matrix for an active matrix display panel has a plurality of TFTs arranged in rows and columns to form a matrix array. Each of the TFT has a control electrode on a dielectric substrate, a first insulator film formed on the control electrode, a second insulator film formed on the first insulator film, a-Si semiconductor layer formed on the second insulator film, and first and second (drain and source) electrodes formed on the a-Si semiconductor layer. The matrix has a plurality of transparent electrodes that contact the second electrodes, row interconnection layers interconnecting the control electrodes of the TFTs of the respective rows, and column interconnection layers interconnecting the first electrodes of the TFTs of the respective columns. The control electrodes and the row interconnection layers (gate electrodes) are made of an alloy of tantalum with tungsten, nickel, cobalt, rhodium, or iridium. The first insulator is formed by anodizing the surface of the gate electrode. The gate electrode has low resistance, improving the quality of the display without impairing insulation performance.
    • 用于有源矩阵显示面板的TFT矩阵具有排列成行和列的多个TFT,以形成矩阵阵列。 每个TFT在电介质基板上具有控制电极,形成在控制电极上的第一绝缘膜,形成在第一绝缘膜上的第二绝缘膜,形成在第二绝缘膜上的a-Si半导体层,以及第一和第二绝缘膜 (漏极和源极)电极形成在a-Si半导体层上。 该矩阵具有与第二电极接触的多个透明电极,将各行的TFT的控制电极互连的行互连层和互连各列的TFT的第一电极的列互连层。 控制电极和行互连层(栅电极)由钽与钨,镍,钴,铑或铱的合金制成。 第一绝缘体通过阳极氧化栅电极的表面而形成。 栅电极具有低电阻,提高显示器的质量而不损害绝缘性能。
    • 8. 发明授权
    • Thin-film transistor array and liquid crystal display device using the
thin-film transistor array
    • 薄膜晶体管阵列防止静电。
    • US5504348A
    • 1996-04-02
    • US406644
    • 1995-03-20
    • Mamoru YoshidaMakoto SasakiHiroyuki OkimotoTsutomu NomotoShunichi Sato
    • Mamoru YoshidaMakoto SasakiHiroyuki OkimotoTsutomu NomotoShunichi Sato
    • G02F1/1362H01L29/04
    • G02F1/136204
    • A thin film transistor array comprises an insulative substrate, a plurality of pixel electrodes arranged in a matrix on the insulative substrate, a plurality of thin film transistors connected respectively to the pixel electrodes, a plurality of address lines formed on the insulative substrate, each address line being connected to a plurality of control electrodes of the thin film transistors, and a plurality of data lines arranged on the insulative substrate in such a manner as to intersect the address lines, each data line being connected to a plurality of data input electrodes of the thin film transistors. A short-wiring is formed on the outside of a display region on the insulative substrate on which the pixel electrodes are arranged, and the short-wiring is connected to at least two of the address lines and the data lines by a two-terminal element having non-linear resistance characteristics defining voltage/current characteristics on the basis of a space charge limited current.
    • 一种薄膜晶体管阵列,包括绝缘衬底,在绝缘衬底上以矩阵形式布置的多个像素电极,分别连接到像素电极的多个薄膜晶体管,形成在绝缘衬底上的多个地址线,每个地址 线连接到薄膜晶体管的多个控制电极以及以与地址线相交的方式布置在绝缘基板上的多条数据线,每条数据线连接到多个数据输入电极 薄膜晶体管。 在布置有像素电极的绝缘基板上的显示区域的外侧形成短布线,并且短路线通过两端子元件连接到至少两条地址线和数据线 具有基于空间电荷限制电流限定电压/电流特性的非线性电阻特性。
    • 9. 发明授权
    • LCD TFT drain and source electrodes having ohmic barrier, primary
conductor, and liquid impermeable layers and method of making
    • 具有欧姆屏障,初级导体和液体不可渗透层的LCD TFT漏极和源电极及其制造方法
    • US5539551A
    • 1996-07-23
    • US168644
    • 1993-12-16
    • Tsutomu NomotoHideki KamadaIchiro Ohno
    • Tsutomu NomotoHideki KamadaIchiro Ohno
    • H01L27/12G02F1/136G02F1/1343H01L29/04H01L31/036
    • H01L27/12
    • A plurality of address wiring layers and a plurality of data wiring layers are arranged to cross each other at a right angle. TFTs are respectively arranged at the intersections between the address wiring layers and the data wiring layers. The gate electrode of each TFT is connected to an address wiring layer for each row. The drain electrode of each TFT is connected to a data wiring layer for each column. Display electrodes are respectively arranged in the regions defined by the address wiring layers and the data wiring layers, and are connected to the source electrodes of the TFTs arranged in the respective regions. The data wiring layers and the source and drain electrodes of the TFTs each comprise the first layer serving as an ohmic barrier layer for a semiconductor layer, the second layer forming of a conductive material and serving as a main signal wiring layer, and the third layer serving as a battery reaction preventing layer.
    • 多个地址布线层和多​​个数据布线层被布置成以直角彼此交叉。 TFT分别布置在地址布线层和数据布线层之间的交点处。 每个TFT的栅电极连接到每行的地址布线层。 每个TFT的漏电极连接到每列的数据布线层。 显示电极分别布置在由地址布线层和数据布线层限定的区域中,并且连接到布置在各个区域中的TFT的源电极。 TFT的数据布线层和源电极和漏电极各自包括用作半导体层的欧姆阻挡层的第一层,导电材料的第二层形成并用作主信号布线层,第三层 用作电池反应防止层。