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1. 发明申请

US20110294005A1 POWER STORAGE DEVICE, ELECTRODE, AND ELECTRIC DEVICE 审中-公开
标题翻译：电力存储装置，电极和电气装置
公开(公告)号：US20110294005A1
公开(公告)日：2011-12-01
申请号：US13102645
申请日：2011-05-06
申请人： Kazutaka KURIKI , Mikio YUKAWA , Hideki MATSUKURA
发明人： Kazutaka KURIKI , Mikio YUKAWA , Hideki MATSUKURA
IPC分类号： H01M4/02
CPC分类号： H01M4/661 , H01M4/0428 , H01M4/134 , H01M4/667 , H01M4/70 , H01M10/0525 , Y02T10/7011
摘要： An object is to improve characteristics of a power storage device by devising the shape of an active material layer. The characteristics of the power storage device can be improved by providing a power storage device including a first electrode, a second electrode, and an electrolyte provided between the first electrode and the second electrode. The second electrode includes an active material layer. The active material layer includes a plurality of projecting portions containing an active material and a plurality of particles containing an active material, which are arranged over the plurality of projecting portions or in a space between the plurality of projecting portions.
摘要翻译：目的是通过设计活性物质层的形状来改善蓄电装置的特性。通过提供包括第一电极，第二电极和设置在第一电极和第二电极之间的电解质的电力存储装置，能够提高蓄电装置的特性。第二电极包括活性物质层。活性物质层包括多个突出部分，其包含活性材料和多个含有活性材料的颗粒，其布置在多个突出部分上或多个突出部分之间的空间中。

2. 发明申请

US20110300445A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电力存储装置及其制造方法
公开(公告)号：US20110300445A1
公开(公告)日：2011-12-08
申请号：US13111079
申请日：2011-05-19
申请人： Satoshi MURAKAMI , Kazutaka KURIKI , Mikio YUKAWA
发明人： Satoshi MURAKAMI , Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M4/58 , C23C16/24 , H01G9/00 , H01M4/1395 , H01G9/042
CPC分类号： H01G11/24 , C23C16/24 , H01G11/30 , H01G11/46 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/48 , H01M4/52 , H01M4/661 , H01M10/0525 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7022 , Y10T29/417 , Y10T29/49115
摘要： A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
摘要翻译：能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。晶须状结晶硅区域包括具有弯曲或分支部分的突起。

3. 发明申请

US20110212363A1 POWER STORAGE SYSTEM AND MANUFACTURING METHOD THEREFOR AND SECONDARY BATTERY AND CAPACITOR 审中-公开
标题翻译：电力储存系统及其二次电池和电容器的制造方法
公开(公告)号：US20110212363A1
公开(公告)日：2011-09-01
申请号：US13033877
申请日：2011-02-24
申请人： Shunpei YAMAZAKI , Tamae MORIWAKA , Kazutaka KURIKI , Mikio YUKAWA
发明人： Shunpei YAMAZAKI , Tamae MORIWAKA , Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M10/26 , H01G9/00 , H01M4/48 , H01M4/505 , H01G9/042 , H01M4/26 , B82Y99/00
CPC分类号： H01G11/26 , H01G11/28 , H01G11/32 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01M2004/021 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.
摘要翻译：本发明涉及一种蓄电系统，其包括负极，该负极具有在集电体的表面上设置为负极活性物质的结晶硅膜，并且在结晶硅膜的表层部分中含有导电氧化物。或者，本发明涉及一种用于制造蓄电系统的方法，其包括在集电器上形成非晶硅膜的步骤，将非晶硅的结晶的催化元素添加到非晶硅的表面上加热非晶硅膜，加入催化剂元素使非晶硅膜结晶，从而形成结晶硅膜，并使用结晶硅膜作为负极活性物质层。

4. 发明申请

US20110294011A1 ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：能源储存装置及其制造方法
公开(公告)号：US20110294011A1
公开(公告)日：2011-12-01
申请号：US13109083
申请日：2011-05-17
申请人： Kazutaka KURIKI , Mikio YUKAWA
发明人： Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M4/58 , B05D5/12 , H01M4/04 , H01G9/00 , H01G9/04
CPC分类号： H01G11/26 , H01G11/30 , H01M4/0428 , H01M4/134 , H01M4/661 , Y02E60/13
摘要： An energy storage device is provided in which a discharge capacity can be high and/or in which degradation of an electrode due to repetitive charge and discharge can be reduced. An electrode of the energy storage device which includes a crystalline silicon layer serving as an active material layer is provided. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region having a plurality of protrusions projected upward from the crystalline silicon region. The protrusions include a first protrusion and a second protrusion; the second protrusion has a larger length along the axis and a sharper tip than the first protrusion.
摘要翻译：提供了一种放电容量可以较高的能量存储装置和/或能够减少由于重复充放电导致的电极劣化的能量存储装置。提供了包含作为活性物质层的结晶硅层的储能装置的电极。晶体硅层包括晶体硅区域和具有从晶体硅区域向上突出的多个突起的晶须状结晶硅区域。突起包括第一突起和第二突起; 所述第二突起沿着所述轴线具有较大的长度，并且比所述第一突起更尖锐。

5. 发明申请

US20110266654A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电力存储装置及其制造方法
公开(公告)号：US20110266654A1
公开(公告)日：2011-11-03
申请号：US13088592
申请日：2011-04-18
申请人： Kazutaka KURIKI , Mikio YUKAWA , Yuji ASANO
发明人： Kazutaka KURIKI , Mikio YUKAWA , Yuji ASANO
IPC分类号： H01L29/02 , H01L21/02
CPC分类号： H01M4/386 , C30B25/005 , C30B29/06 , C30B29/62 , C30B33/02 , H01G11/06 , H01G11/22 , H01G11/26 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01G11/68 , H01G11/70 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L28/82 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/382 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M10/0569 , H01M10/0583 , H01M12/08 , H01M2300/0037 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.
摘要翻译：提供一种蓄电装置的制造方法，其中通过低压CVD法在集电体上形成包括晶须状结晶硅区域的结晶硅层作为活性物质层，其中使用沉积物进行加热含硅气体。蓄电装置包括集电体，在集电体上形成的混合层，以及用作在混合层上形成的活性物质层的结晶硅层。晶体硅层包括晶体硅区域和晶须状结晶硅区域，其包括在晶体硅区域上突出的多个突起。利用突起，可以增加用作活性物质层的结晶硅层的表面积。

6. 发明申请

US20120141866A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20120141866A1
公开(公告)日：2012-06-07
申请号：US13307045
申请日：2011-11-30
申请人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
发明人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
IPC分类号： H01M4/66 , H01M10/02 , H01G9/032
CPC分类号： H01M4/366 , H01G11/06 , H01G11/50 , H01G11/68 , H01G11/72 , H01M4/382 , H01M4/386 , H01M4/661 , H01M10/0525 , H01M10/0562 , H01M2004/027 , Y02E60/122 , Y02E60/13 , Y02T10/7022
摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
摘要翻译：提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层。因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。

7. 发明申请

US20110305950A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20110305950A1
公开(公告)日：2011-12-15
申请号：US13153503
申请日：2011-06-06
申请人： Kazutaka KURIKI , Kiyofumi OGINO , Tomokazu YOKOI , Makoto ISHIKAWA , Toshihiko TAKEUCHI
发明人： Kazutaka KURIKI , Kiyofumi OGINO , Tomokazu YOKOI , Makoto ISHIKAWA , Toshihiko TAKEUCHI
IPC分类号： H01M4/64 , H01G9/042 , H01M10/04
CPC分类号： H01G11/26 , H01M4/134 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M2004/025 , Y02E60/122 , Y02E60/13
摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.
摘要翻译：提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。因此，可以提高放电容量，并且可以提高循环特性。

8. 发明申请

US20110269301A1 MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF ELECTRODE 有权
标题翻译：单晶半导体膜的制造方法及电极的制造方法
公开(公告)号：US20110269301A1
公开(公告)日：2011-11-03
申请号：US13092249
申请日：2011-04-22
申请人： Sho KATO , Kazutaka KURIKI
发明人： Sho KATO , Kazutaka KURIKI
IPC分类号： H01L21/20
CPC分类号： H01L21/76251
摘要： To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film 12) is formed over a surface of the single crystal semiconductor film 11, and the single crystal semiconductor substrate 10 and the single crystal semiconductor film 11 are separated from each other by a separation step in which force is applied to the single crystal semiconductor film 11, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film 12, an epoxy resin film can be used, for example.
摘要翻译：提供通过简单且低成本的方法获得单晶半导体膜的方法。通过气相外延生长法在单晶半导体衬底10的表面上形成具有压应力的单晶半导体膜11，在其上形成具有拉伸应力的膜（例如，热固性树脂膜12）通过对单晶半导体膜11施加力的分离工序将单晶半导体膜11的表面，单晶半导体基板10和单晶半导体膜11分离，得到单晶半导体膜。另外，作为热固性树脂膜12，例如可以使用环氧树脂膜。

9. 发明申请

US20110236753A1 SECONDARY BATTERY AND METHOD FOR MANUFACTURING ELECTRODE OF THE SAME 有权
标题翻译：二次电池及其制造方法
公开(公告)号：US20110236753A1
公开(公告)日：2011-09-29
申请号：US13044172
申请日：2011-03-09
申请人： Kazutaka KURIKI , Tamae MORIWAKA
发明人： Kazutaka KURIKI , Tamae MORIWAKA
IPC分类号： H01M4/58 , H01M4/26
CPC分类号： H01M4/134 , H01M4/0428 , H01M4/0471 , H01M4/1395 , H01M4/38 , H01M4/661 , H01M4/662 , H01M4/667 , Y10T29/49108 , Y10T29/49115
摘要： A secondary battery to be provided includes an electrode including silicon or a silicon compound, and the electrode includes, for example, a current collector formed using metal and a silicon film as an active material provided over the current collector. The hydrogen concentration in the silicon film of the electrode may be higher than or equal to 1.0×1018 cm−3 and lower than or equal to 1.0×1021 cm−3. Such a silicon film is formed over a current collector by a plasma CVD method or the like for example, and hydrogen is contained as little as possible in the silicon film, which is preferable. In order to contain hydrogen as little as possible in the silicon film, the silicon film may be formed over the current collector under a high temperature environment.
摘要翻译：要提供的二次电池包括含硅或硅化合物的电极，并且该电极包括例如使用金属形成的集电体和设置在集电体上的活性材料的硅膜。电极的硅膜中的氢浓度可以高于或等于1.0×1018cm-3且小于或等于1.0×1021cm-3。这样的硅膜例如通过等离子体CVD法等在集电体上形成，并且在硅膜中尽可能少地含有氢，这是优选的。为了在硅膜中尽可能少地含有氢，可以在高温环境下在集电体上形成硅膜。

10. 发明申请

US20120156556A1 ACTIVE MATERIAL, ELECTRODE INCLUDING THE ACTIVE MATERIAL AND MANUFACTURING METHOD THEREOF, AND SECONDARY BATTERY 有权
标题翻译：活性材料，包括活性材料的电极及其制造方法和二次电池
公开(公告)号：US20120156556A1
公开(公告)日：2012-06-21
申请号：US13307052
申请日：2011-11-30
申请人： Kazutaka KURIKI , Mitsuhiro Ichijo , Toshiya Endo
发明人： Kazutaka KURIKI , Mitsuhiro Ichijo , Toshiya Endo
IPC分类号： H01M10/02 , H01M4/66 , H01M4/58
CPC分类号： H01M4/366 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M4/48 , H01M4/661 , Y02E60/122 , Y02P70/54
摘要： An electrode in which a silicon layer is provided over a current collector, a thin film layer having a thickness within a certain range is provided on a surface of the silicon layer, and the thin film layer contains fluorine, is used for a power storage device. The thickness of the thin film layer containing fluorine is greater than 0 nm and less than or equal to 10 nm, preferably greater than or equal to 4 nm and less than or equal to 9 nm. The fluorine concentration of the thin film layer containing fluorine is preferably as high as possible, and the nitrogen concentration, the oxygen concentration, and the hydrogen concentration thereof are preferably as low as possible.
摘要翻译：在硅层的表面上设置有在集电体上设置硅层的电极，厚度在一定范围内的薄膜层，薄膜层含有氟，用于蓄电装置。含氟的薄膜层的厚度大于0nm且小于或等于10nm，优选大于或等于4nm且小于或等于9nm。含氟的薄膜层的氟浓度优选尽可能高，氮浓度，氧浓度和氢浓度优选尽可能低。

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