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1. 发明授权

US08853684B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08853684B2
公开(公告)日：2014-10-07
申请号：US13109594
申请日：2011-05-17
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato , Mitsuhiro Ichijo , Toshiya Endo
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato , Mitsuhiro Ichijo , Toshiya Endo
IPC分类号： H01L29/04 , H01L29/786 , H01L29/49
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.
摘要翻译：在具有栅极结构的晶体管中，栅电极层与形成沟道区的氧化物半导体层重叠，栅极绝缘层介于其间，当绝缘层中含有大量的氢时，氢扩散由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。本发明的目的是提供一种具有良好电特性的半导体器件。与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。

2. 发明申请

US20110284854A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110284854A1
公开(公告)日：2011-11-24
申请号：US13109594
申请日：2011-05-17
申请人： Yuta ENDO , Toshinari SASAKI , Kosei NODA , Mizuho SATO , Mitsuhiro ICHIJO , Toshiya ENDO
发明人： Yuta ENDO , Toshinari SASAKI , Kosei NODA , Mizuho SATO , Mitsuhiro ICHIJO , Toshiya ENDO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.
摘要翻译：在具有栅极结构的晶体管中，栅电极层与形成沟道区的氧化物半导体层重叠，栅极绝缘层介于其间，当绝缘层中含有大量的氢时，氢扩散由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。本发明的目的是提供一种具有良好电特性的半导体器件。与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。

3. 发明授权

US08552425B2 Semiconductor device 有权
公开(公告)号：US08552425B2
公开(公告)日：2013-10-08
申请号：US13157637
申请日：2011-06-10
申请人： Mitsuhiro Ichijo , Toshiya Endo , Kunihiko Suzuki
发明人： Mitsuhiro Ichijo , Toshiya Endo , Kunihiko Suzuki
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/441 , H01L21/477 , H01L29/247 , H01L29/42384 , H01L29/47 , H01L29/4908 , H01L29/495 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.

4. 发明申请

US20120156556A1 ACTIVE MATERIAL, ELECTRODE INCLUDING THE ACTIVE MATERIAL AND MANUFACTURING METHOD THEREOF, AND SECONDARY BATTERY 有权
标题翻译：活性材料，包括活性材料的电极及其制造方法和二次电池
公开(公告)号：US20120156556A1
公开(公告)日：2012-06-21
申请号：US13307052
申请日：2011-11-30
申请人： Kazutaka KURIKI , Mitsuhiro Ichijo , Toshiya Endo
发明人： Kazutaka KURIKI , Mitsuhiro Ichijo , Toshiya Endo
IPC分类号： H01M10/02 , H01M4/66 , H01M4/58
CPC分类号： H01M4/366 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M4/48 , H01M4/661 , Y02E60/122 , Y02P70/54
摘要： An electrode in which a silicon layer is provided over a current collector, a thin film layer having a thickness within a certain range is provided on a surface of the silicon layer, and the thin film layer contains fluorine, is used for a power storage device. The thickness of the thin film layer containing fluorine is greater than 0 nm and less than or equal to 10 nm, preferably greater than or equal to 4 nm and less than or equal to 9 nm. The fluorine concentration of the thin film layer containing fluorine is preferably as high as possible, and the nitrogen concentration, the oxygen concentration, and the hydrogen concentration thereof are preferably as low as possible.
摘要翻译：在硅层的表面上设置有在集电体上设置硅层的电极，厚度在一定范围内的薄膜层，薄膜层含有氟，用于蓄电装置。含氟的薄膜层的厚度大于0nm且小于或等于10nm，优选大于或等于4nm且小于或等于9nm。含氟的薄膜层的氟浓度优选尽可能高，氮浓度，氧浓度和氢浓度优选尽可能低。

5. 发明申请

US20110284959A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110284959A1
公开(公告)日：2011-11-24
申请号：US13099613
申请日：2011-05-03
申请人： Kunio KIMURA , Mitsuhiro ICHIJO , Toshiya ENDO
发明人： Kunio KIMURA , Mitsuhiro ICHIJO , Toshiya ENDO
IPC分类号： H01L27/12 , H01L21/336
CPC分类号： H01L29/78606 , G02F1/133345 , G02F1/13394 , G02F1/134309 , G02F1/1368 , G02F2203/64 , H01L21/3003 , H01L21/31629 , H01L27/1225 , H01L27/14616 , H01L27/3262 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.
摘要翻译：一个目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。另一个目的是以高产量制造高度可靠的半导体器件。在包括氧化物半导体膜的顶栅交错晶体管中，作为与氧化物半导体膜接触的第一栅极绝缘膜，通过使用含有氟化硅和氧的沉积气体的等离子体CVD法形成氧化硅膜; 并且作为层叠在第一栅极绝缘膜上的第二栅极绝缘膜，通过使用含有氢化硅和氧的沉积气体的等离子体CVD法形成氧化硅膜。

6. 发明授权

US08486777B2 Method for manufacturing microcrystalline semiconductor and thin film transistor 有权
标题翻译：微晶半导体和薄膜晶体管的制造方法
公开(公告)号：US08486777B2
公开(公告)日：2013-07-16
申请号：US13343734
申请日：2012-01-05
申请人： Mitsuhiro Ichijo , Kazutaka Kuriki , Tomokazu Yokoi , Toshiya Endo
发明人： Mitsuhiro Ichijo , Kazutaka Kuriki , Tomokazu Yokoi , Toshiya Endo
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , C23C16/45565 , C23C16/505 , H01L21/02595 , H01L21/0262 , H01L27/1214 , H01L27/127 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow portion of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. Accordingly, high-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate.
摘要翻译：提供了一种以高质量生产率制造微晶半导体层的技术。在等离子体CVD装置的反应室中，上部电极和下部电极彼此平行地设置。在上部电极中形成中空部，上部电极具有形成在上部电极的与下部电极相对的面上形成的多个孔的喷淋板。衬底设置在下电极上。含有沉积气体和氢气的气体从淋浴板通过上部电极的中空部分供应到反应室，并且稀有气体从不同于上部电极的部分供应到反应室。因此，向上部电极提供高频电力以产生等离子体，从而在基板上形成微晶半导体层。

7. 发明申请

US20120319157A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20120319157A1
公开(公告)日：2012-12-20
申请号：US13488480
申请日：2012-06-05
申请人： Mitsuhiro Ichuo , Toshiya Endo , Sho Kato
发明人： Mitsuhiro Ichuo , Toshiya Endo , Sho Kato
IPC分类号： H01L33/36 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/02363 , H01L31/0288 , Y02E10/547
摘要： To provide a heterojunction photoelectric conversion device including passivation layers for reducing surface defects of a silicon substrate. The photoelectric conversion device includes a first silicon semiconductor layer which is in contact with one surface of a single crystal silicon substrate; a second silicon semiconductor layer which is in contact with the first silicon semiconductor layer; a third silicon semiconductor layer which is in contact with the other surface of the single crystal silicon substrate; and a fourth silicon semiconductor layer which is in contact with the third silicon semiconductor layer. Further, the fluorine concentration in the first silicon semiconductor layer and the third silicon semiconductor layer is lower than or equal to 1×1017 atoms/cm3.
摘要翻译：提供一种异质结光电转换装置，其包括用于减少硅衬底的表面缺陷的钝化层。光电转换装置包括与单晶硅衬底的一个表面接触的第一硅半导体层; 与第一硅半导体层接触的第二硅半导体层; 与所述单晶硅衬底的另一表面接触的第三硅半导体层; 以及与第三硅半导体层接触的第四硅半导体层。此外，第一硅半导体层和第三硅半导体层中的氟浓度低于或等于1×10 17原子/ cm 3。

8. 发明申请

US20120100677A1 METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR AND THIN FILM TRANSISTOR 有权
标题翻译：制造微晶半导体和薄膜晶体管的方法
公开(公告)号：US20120100677A1
公开(公告)日：2012-04-26
申请号：US13343734
申请日：2012-01-05
申请人： Mitsuhiro ICHIJO , Kazutaka KURIKI , Tomokazu YOKOI , Toshiya ENDO
发明人： Mitsuhiro ICHIJO , Kazutaka KURIKI , Tomokazu YOKOI , Toshiya ENDO
IPC分类号： H01L21/336 , H01L21/205
CPC分类号： H01L21/02532 , C23C16/45565 , C23C16/505 , H01L21/02595 , H01L21/0262 , H01L27/1214 , H01L27/127 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow portion of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. Accordingly, high-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate.
摘要翻译：提供了一种以高质量生产率制造微晶半导体层的技术。在等离子体CVD装置的反应室中，上部电极和下部电极彼此平行地设置。在上部电极中形成中空部，上部电极具有形成在上部电极的与下部电极相对的面上形成的多个孔的喷淋板。衬底设置在下电极上。含有沉积气体和氢气的气体从淋浴板通过上部电极的中空部分供应到反应室，并且稀有气体从不同于上部电极的部分供应到反应室。因此，向上部电极提供高频电力以产生等离子体，从而在基板上形成微晶半导体层。

9. 发明申请

US20120001168A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120001168A1
公开(公告)日：2012-01-05
申请号：US13164806
申请日：2011-06-21
申请人： Mitsuhiro ICHIJO , Toshiya ENDO , Kunihiko SUZUKI , Yasuhiko TAKEMURA
发明人： Mitsuhiro ICHIJO , Toshiya ENDO , Kunihiko SUZUKI , Yasuhiko TAKEMURA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： In a transistor including an oxide semiconductor, hydrogen in the oxide semiconductor leads to degradation of electric characteristics of the transistor. Thus, an object is to provide a semiconductor device having good electrical characteristics. An insulating layer in contact with an oxide semiconductor layer where a channel region is formed is formed by a plasma CVD method using a silicon halide. The insulating layer thus formed has a hydrogen concentration less than 6×1020 atoms/cm3 and a halogen concentration greater than or equal to 1×1020 atoms/cm3; accordingly, hydrogen diffusion into the oxide semiconductor layer can be prevented and hydrogen in the oxide semiconductor layer is inactivated or released from the oxide semiconductor layer by the halogen, whereby a semiconductor device having good electrical characteristics can be provided.
摘要翻译：在包括氧化物半导体的晶体管中，氧化物半导体中的氢导致晶体管的电特性的劣化。因此，目的在于提供具有良好的电气特性的半导体器件。通过使用卤化硅的等离子体CVD法形成与形成沟道区的氧化物半导体层接触的绝缘层。如此形成的绝缘层的氢浓度小于6×1020原子/ cm3，卤素浓度大于或等于1×1020原子/ cm3; 因此，可以防止氢扩散到氧化物半导体层中，并且氧化物半导体层中的氢被卤素氧化半导体层失活或释放，从而可以提供具有良好电特性的半导体器件。

10. 发明申请

US20110309355A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110309355A1
公开(公告)日：2011-12-22
申请号：US13157637
申请日：2011-06-10
申请人： Mitsuhiro ICHIJO , Toshiya ENDO , Kunihiko SUZUKI
发明人： Mitsuhiro ICHIJO , Toshiya ENDO , Kunihiko SUZUKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/441 , H01L21/477 , H01L29/247 , H01L29/42384 , H01L29/47 , H01L29/4908 , H01L29/495 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.
摘要翻译：目的在于提供具有良好电气特性的半导体器件。使用具有小于6×1020原子/ cm3的氢浓度和大于或等于1×1020原子/ cm3的氟浓度的栅极绝缘层作为与形成沟道区的氧化物半导体层接触的栅极绝缘层，从而可以减少从栅极绝缘层释放的氢的量，并且可以防止氢向氧化物半导体层的扩散。此外，可以通过使用氟来消除存在于氧化物半导体层中的氢; 因此，可以降低氧化物半导体层中的氢含量。因此，可以提供具有良好电特性的半导体器件。

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