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1. 发明授权

US6043940A Optical system for optical recording 失效
标题翻译：用于光学记录的光学系统
公开(公告)号：US6043940A
公开(公告)日：2000-03-28
申请号：US193111
申请日：1998-11-16
申请人： Kazushi Kamiyama , Shinji Inoue , Satoru Tsubokura , Hiroyuki Kinoshita , Takashi Uto
发明人： Kazushi Kamiyama , Shinji Inoue , Satoru Tsubokura , Hiroyuki Kinoshita , Takashi Uto
IPC分类号： G02B1/02 , G11B7/135 , G11B11/105 , G02B3/02
CPC分类号： G11B7/1387 , G02B1/02 , G11B7/1374 , G11B11/10554 , G11B11/1058
摘要： A hemispheric lens of a single crystal having a refractive index of 2.0 or over is used as a SIL lens of an optical system for optical recording. The single crystal is LiNbO3, LiTaO3, rutile phase TiO2, PbMoO4, TeO2, SrTiO3, ZrO2, SrNbO3, SrTaO3, CaNbO3, CaTaO3, CaTiO3, KNbO3, KTaO3, BaZrO3, SrZrO3, CaZrO3, KNbO3, KTaO3, BaZrO3, SrZrO3, CaZrO3, ZnWO4, ZnMoO4, CdWO4, CdMoO4, PbWO4, Bi20SiO12, Bi20GeO12, Bi4Si3O12, Bi4Ge3O12, GaP, ZnTe, ZnSe, Cu3TaSe4 or ZnS.
摘要翻译：使用折射率为2.0以上的单晶的半球透镜作为光学记录用光学系统的SIL透镜。单晶是LiNbO3，LiTaO3，金红石相TiO2，PbMoO4，TeO2，SrTiO3，ZrO2，SrNbO3，SrTaO3，CaNbO3，CaTaO3，CaTiO3，KNbO3，KTaO3，BaZrO3，SrZrO3，CaZrO3，KNbO3，KTaO3，BaZrO3，SrZrO3，CaZrO3， ZnWO4，ZnMoO4，CdWO4，CdMoO4，PbWO4，Bi20SiO12，Bi20GeO12，Bi4Si3O12，Bi4Ge3O12，GaP，ZnTe，ZnSe，Cu3TaSe4或ZnS。

2. 发明授权

US09642540B2 Blood pressure measurement device 有权
公开(公告)号：US09642540B2
公开(公告)日：2017-05-09
申请号：US13751246
申请日：2013-01-28
申请人： Hiroyuki Kinoshita , Chisato Uesaka , Yukiya Sawanoi
发明人： Hiroyuki Kinoshita , Chisato Uesaka , Yukiya Sawanoi
IPC分类号： A61B5/021 , A61B5/0225 , A61B17/132 , A61B5/022
CPC分类号： A61B5/02141 , A61B5/02225 , A61B5/02233 , A61B5/0225 , A61B17/132
摘要： A blood pressure measurement device includes a measurement air bladder for being wrapped around a body part to be measured, a compression member that compresses the measurement air bladder from the outside of the measurement air bladder against the body part to be measured; an inflation member for inflating the measurement air bladder, a deflation member for deflating the measurement air bladder, a blood pressure determination unit that determines a blood pressure during the inflation by the inflation member or during the deflation by the deflation member, and a control unit that causes the compression member to apply a pressure that is higher than or equal to an atmospheric pressure to the measurement air bladder when an internal pressure of the measurement air bladder reaches or falls below a certain pressure due to the deflation by the deflation member.

3. 发明授权

US08730357B2 Image processing device, image processing method, and program 有权
标题翻译：图像处理装置，图像处理方法和程序
公开(公告)号：US08730357B2
公开(公告)日：2014-05-20
申请号：US13096438
申请日：2011-04-28
申请人： Kenichi Nishio , Hyongmyong Kang , Hiroyuki Kinoshita , Tsukasa Hashino , Takuya Kato , Gentaro Irisawa , Atsuo Minato
发明人： Kenichi Nishio , Hyongmyong Kang , Hiroyuki Kinoshita , Tsukasa Hashino , Takuya Kato , Gentaro Irisawa , Atsuo Minato
IPC分类号： H04N5/217
CPC分类号： H04N9/045 , H04N9/07
摘要： An image processing method includes the steps of calculating, with respect to a processing-target pixel in an input image signal, a concentric aberration correction amount for concentric aberration that is a component of magnification chromatic aberration, the concentric aberration causing a color shift to occur in a concentric manner from the center of an image, calculating, with respect to the processing-target pixel, a uniform aberration correction amount for uniform aberration that is a component of magnification chromatic aberration, the uniform aberration causing a color shift direction and a color shift amount to uniformly occur on a whole image, and correcting a pixel value of the processing-target pixel on the basis of the calculated concentric aberration correction amount and the calculated uniform aberration correction amount.
摘要翻译：一种图像处理方法包括以下步骤：相对于输入图像信号中的处理目标像素，计算作为倍率色像差的分量的同心像差的同心像差校正量，产生发生色偏的同心像差以图像中心的同心方式，相对于处理对象像素计算作为倍率色像差的分量的均匀像差的均匀像差校正量，引起色移方向和颜色的均匀像差基于所计算的同心像差校正量和计算出的均匀像差校正量来校正处理对象像素的像素值。

4. 发明申请

US20130307044A1 Selective Air Gap Isolation In Non-Volatile Memory 审中-公开
标题翻译：非易失性存储器中的选择性空气间隙隔离
公开(公告)号：US20130307044A1
公开(公告)日：2013-11-21
申请号：US13472337
申请日：2012-05-15
申请人： Hiroyuki Kinoshita , Ming Tian , Daisuke Maekawa , Naoki Watakabe , Seiji Shimabukuro , Hiroaki Iuchi , Hitomi Nakajima
发明人： Hiroyuki Kinoshita , Ming Tian , Daisuke Maekawa , Naoki Watakabe , Seiji Shimabukuro , Hiroaki Iuchi , Hitomi Nakajima
IPC分类号： H01L29/78 , H01L21/76
CPC分类号： H01L27/11524 , H01L21/764 , H01L29/66825 , H01L29/7881
摘要： Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. A blocking layer can be introduced to inhibit the formation of materials in the air gaps during subsequent process steps. The blocking layer may result in selective air gap formation or varying dimension of air gaps at cell areas relative to select gate areas in the memory. The blocking layer may result in a smaller vertical dimension for air gaps formed in the isolation regions at select gate areas relative to cell areas. The blocking layer may inhibit formation of air gaps at the select gate areas in other examples. Selective etching, implanting and different isolation materials may be used to selectively define air gaps.
摘要翻译：提供了非易失性存储器阵列中的气隙隔离和相关制造工艺。至少部分地可以通过在活动区域之间沿列方向延伸的位线空气间隙来提供衬底的相邻有源区域之间的电隔离。可以引入阻挡层以在随后的工艺步骤期间抑制气隙中的材料的形成。相对于存储器中的选择栅极区域，阻挡层可以导致在单元区域处的选择性气隙形成或气隙的变化尺寸。阻挡层可以导致在相对于细胞区域的选择栅极区域处形成在隔离区域中的气隙的较小的垂直尺寸。在其他实施例中，阻挡层可以抑制在选择栅极区域处形成气隙。选择性蚀刻，植入和不同隔离材料可用于选择性地限定气隙。

5. 发明授权

US08486782B2 Flash memory devices and methods for fabricating the same 有权
标题翻译：闪存器件及其制造方法
公开(公告)号：US08486782B2
公开(公告)日：2013-07-16
申请号：US11615489
申请日：2006-12-22
申请人： Ning Cheng , Fred Cheung , Ashot Melik-Martirosian , Kyunghoon Min , Michael Brennan , Hiroyuki Kinoshita
发明人： Ning Cheng , Fred Cheung , Ashot Melik-Martirosian , Kyunghoon Min , Michael Brennan , Hiroyuki Kinoshita
IPC分类号： H01L21/336
CPC分类号： H01L29/0607 , H01L27/115 , H01L27/11521 , H01L27/11568
摘要： Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.
摘要翻译：提供闪存器件及其制造方法。根据本发明的示例性实施例，一种用于制造存储器件的方法包括以下步骤：制造覆盖衬底的第一栅极堆叠和第二栅极堆叠。在第一栅极堆叠和第二栅极堆叠之间蚀刻到衬底中的沟槽，并且在沟槽内的衬底内形成第一杂质掺杂区域。至少部分地用导电材料填充沟槽。

6. 发明授权

US08445966B2 Method and apparatus for protection against process-induced charging 有权
标题翻译：用于防止过程引起的充电的方法和装置
公开(公告)号：US08445966B2
公开(公告)日：2013-05-21
申请号：US11614053
申请日：2006-12-20
申请人： David M. Rogers , Mimi X. Qian , Kwadwo A. Appiah , Mark Randolph , Michael A. VanBuskirk , Tazrien Kamal , Hiroyuki Kinoshita , Yi He , Wei Zheng
发明人： David M. Rogers , Mimi X. Qian , Kwadwo A. Appiah , Mark Randolph , Michael A. VanBuskirk , Tazrien Kamal , Hiroyuki Kinoshita , Yi He , Wei Zheng
IPC分类号： H01L23/62
CPC分类号： H01L21/768 , G11C8/08 , G11C8/14 , H01L27/0248 , H01L29/66477 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
摘要翻译：用于改善电荷耗散保护的半导体器件（400）包括衬底（426），半导体或导电材料层（406），一个或多个薄膜器件（408）和电荷通道器件（414）。薄膜器件（408）连接到半导体或导电层（406），并且电荷通道器件（414）耦合到薄膜器件（408）和衬底（426），并提供来自薄的薄膜器件（408）到衬底（426）以将电荷从半导体/导电层（406）耗散到衬底（426）。

7. 发明授权

US08079589B2 Sheet conveying apparatus and image forming apparatus 有权
标题翻译：片材输送装置和成像装置
公开(公告)号：US08079589B2
公开(公告)日：2011-12-20
申请号：US12465977
申请日：2009-05-14
申请人： Hiroyuki Kinoshita , Hideyuki Terashima , Naohiro Iwata , Kosuke Yamamoto , Akihiro Tomoda , Ryosuke Sato , Akio Okubo
发明人： Hiroyuki Kinoshita , Hideyuki Terashima , Naohiro Iwata , Kosuke Yamamoto , Akihiro Tomoda , Ryosuke Sato , Akio Okubo
IPC分类号： B65H9/04
CPC分类号： B65H9/006 , B65H2403/70 , B65H2404/1424 , B65H2404/1531 , B65H2405/332
摘要： A first conveying mechanism includes an intermediate conveying roller for conveying a recording sheet, an intermediate conveying roller shaft for supporting the intermediate conveying roller, an intermediate conveying roller drive mechanism for rotationally driving the intermediate conveying roller shaft, and a roller control mechanism for controlling movements of the intermediate conveying roller relative to the intermediate conveying roller shaft. The roller control mechanism performs skew correction along with conveying the recording sheet by rotating the intermediate conveying roller integrally with the intermediate conveying roller shaft while the intermediate conveying roller drive mechanism rotationally drives the intermediate conveying roller shaft and stops the rotational drive of the intermediate conveying roller shaft performed by the intermediate conveying roller drive mechanism after the skew correction to cause the intermediate conveying roller to be movable within a predetermined range in the axial direction of the intermediate conveying roller shaft.
摘要翻译：第一输送机构包括用于输送记录纸的中间输送辊，用于支撑中间输送辊的中间输送辊轴，用于旋转驱动中间输送辊轴的中间输送辊驱动机构，以及用于控制运动的辊控制机构中间输送辊相对于中间输送辊轴。当中间输送辊驱动机构旋转地驱动中间输送辊轴并停止中间输送辊的旋转驱动时，滚子控制机构通过与中间输送辊轴一体地旋转中间输送辊而进行扭曲校正以及输送记录纸在偏斜校正之后由中间输送辊驱动机构执行的轴，以使中间输送辊能够在中间输送辊轴的轴向方向上的预定范围内移动。

8. 发明授权

US07981745B2 Sacrificial nitride and gate replacement 有权
标题翻译：牺牲氮化物和栅极替代
公开(公告)号：US07981745B2
公开(公告)日：2011-07-19
申请号：US11847507
申请日：2007-08-30
申请人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
发明人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L21/3185 , H01L27/115 , H01L27/11568 , H01L29/42348 , H01L29/7923
摘要： Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.
摘要翻译：提供了在存储单元的电荷存储材料层周围形成顶部氧化物的方法以及提高存储单元的电荷存储材料层周围的顶部氧化物的质量的方法。该方法可以包括在半导体衬底上提供电荷存储层，电荷存储层上的氮化物层和氮化物层上的第一多晶硅层，并将氮化物层的至少一部分转化为顶部氧化物。通过将氮化物层的至少一部分转化为顶部氧化物层，可以提高所得顶部氧化物层的质量。

9. 发明申请

US20110095355A1 SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS 有权
标题翻译：分离式充电储存节点外部间隔过程
公开(公告)号：US20110095355A1
公开(公告)日：2011-04-28
申请号：US12980716
申请日：2010-12-29
申请人： Minghao Shen , Chungho Lee , Hiroyuki Kinoshita , Huaqiang Wu
发明人： Minghao Shen , Chungho Lee , Hiroyuki Kinoshita , Huaqiang Wu
IPC分类号： H01L29/792
CPC分类号： H01L29/7923 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L27/115 , H01L27/11568
摘要： Memory cells containing two split sub-lithographic charge storage nodes on a semiconductor substrate and methods for making the memory cells are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing an exposed portion of a fist poly layer between sloping side surfaces or outer surfaces of spacers while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing an exposed portion of a charge storage layer between sloping side surfaces or outer surfaces of spacers, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.
摘要翻译：提供了包含半导体衬底上的两个分裂子光刻电荷存储节点的存储单元以及用于制造存储单元的方法。这些方法可以包括通过使用间隔物形成技术形成两个分裂的亚光刻电荷存储节点。通过在间隔物的倾斜侧表面或外表面之间除去第一多晶硅层的暴露部分，同时留下被间隔物保护的第一多晶硅层的部分，该方法可以提供两个分裂的次光刻的第一多晶硅栅极。此外，通过去除间隔物的倾斜侧表面或外表面之间的电荷存储层的暴露部分，该方法可以提供电荷存储层的两个分开的窄部分，其随后形成两个分裂的亚光刻电荷存储节点。

10. 发明授权

US07883963B2 Split charge storage node outer spacer process 有权
公开(公告)号：US07883963B2
公开(公告)日：2011-02-08
申请号：US11924169
申请日：2007-10-25
申请人： Minghao Shen , Chungho Lee , Hiroyuki Kinoshita , Huaqiang Wu
发明人： Minghao Shen , Chungho Lee , Hiroyuki Kinoshita , Huaqiang Wu
IPC分类号： H01L21/336
CPC分类号： H01L29/7923 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L27/115 , H01L27/11568
摘要： Memory cells containing two split sub-lithographic charge storage nodes on a semiconductor substrate and methods for making the memory cells are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing an exposed portion of a fist poly layer between sloping side surfaces or outer surfaces of spacers while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing an exposed portion of a charge storage layer between sloping side surfaces or outer surfaces of spacers, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.

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