专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06338931B1 Resist compositions and patterning process 有权
标题翻译：抗蚀剂组合物和图案化工艺
公开(公告)号：US06338931B1
公开(公告)日：2002-01-15
申请号：US09637595
申请日：2000-08-15
申请人： Kazunori Maeda , Takeshi Nagata , Satoshi Watanabe , Youichi Ohsawa , Jun Watanabe , Shigehiro Nagura
发明人： Kazunori Maeda , Takeshi Nagata , Satoshi Watanabe , Youichi Ohsawa , Jun Watanabe , Shigehiro Nagura
IPC分类号： G03F7039
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1): wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.
摘要翻译：化学放大型抗蚀剂组合物含有式（1）的磺酰基二氮甲烷化合物作为光酸产生剂：其中R1是C1-10烷基或C6-14芳基，R2是C1-6烷基，G是SO2或CO，R3是C1 -10烷基或C6-14芳基，p为0〜4的整数，q为1〜5的整数，1 <= p + q <= 5，n为1或2，m为0或1， n + m = 2。该组合物特别适用于微细加工，因为包括改进的分辨率，最小化的线宽变化或形状退化的许多优点，即使在长期PED，涂布后的最小化碎片，显影和剥离以及显影后的改进的图案轮廓方面也是如此。

2. 发明授权

US06440634B1 Onium salts, photoacid generators for resist compositions, resist compositions, and patterning process 有权
标题翻译：用于抗蚀剂组合物的鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US06440634B1
公开(公告)日：2002-08-27
申请号：US09637363
申请日：2000-08-15
申请人： Youichi Ohsawa , Jun Watanabe , Wataru Kusaki , Satoshi Watanabe , Takeshi Nagata , Shigehiro Nagura
发明人： Youichi Ohsawa , Jun Watanabe , Wataru Kusaki , Satoshi Watanabe , Takeshi Nagata , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： C07C309/73 , C07C309/71 , C07C381/12 , C07C2602/42 , G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： Onium salts of the formula (1) are novel. R1 is C1-10 alkyl or C6-14 aryl, R2 is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q=5, R3 is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and “a” is equal to 3 or 2. A chemical amplification type resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and stripping, and improved pattern profile after development.
摘要翻译：式（1）的鎓盐是新的，R 1是C 1-10烷基或C 6-14芳基，R 2是H或C 1-6烷基，p是1至5的整数，q是0至4的整数， p + q = 5，R3是C1-10烷基或C6-14芳基，M是硫或碘原子，“a”等于3或2.包含鎓盐作为光酸的化学放大型抗蚀剂组合物发生器适用于微细加工，特别是通过深紫外光刻，因为许多优点，包括改进的分辨率，最小化线宽变化或形状退化，即使长期PED，最小化涂层后的缺陷，显影和剥离，以及改进的图案轮廓。

3. 发明授权

US6030746A Di- and triphenyl monoterpene hydrocarbon derivatives, dissolution inhibitors, and chemically amplified positive resist compositions 失效
标题翻译：二苯基和三苯基单萜烃衍生物，溶解抑制剂和化学增强正性抗蚀剂组合物
公开(公告)号：US6030746A
公开(公告)日：2000-02-29
申请号：US831749
申请日：1997-04-01
申请人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C07C43/205 , C07C43/30 , C07C43/303 , C07C43/315 , C07C43/32 , C07C69/28 , C07C69/30 , C07C69/712 , C07C69/96 , C07F7/06 , C07F7/08 , C07F7/18 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C07C43/303 , C07C69/96 , G03F7/0045 , C07C2101/14 , G03F7/039 , Y10S430/118
摘要： Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.
摘要翻译：式（1）的二 - 或三苯基单萜烃衍生物是新颖的。 X是二价或三价单萜烃基，R 1至R 3是氢或烷基，烷氧基，烷氧基烷基，烯基或芳基，R 4是氢或酸不稳定基团，至少一个R 4是酸不稳定基团，字母n 是1-5的整数，j，k和m是0-4，n + j + k + m = 5的整数，p是2或3.当用作溶出速率调节剂时，式 1）在深紫外区域发挥显着增强的溶解抑制作用和最小化的光吸收。具有其中混合的式（1）化合物的化学放大正性抗蚀剂组合物对光化辐射如深UV辐射，电子束和X射线，特别是KrF准分子激光具有高度敏感性，并且具有改善的灵敏度，分辨率和等离子体耐腐蚀性。

4. 发明授权

US06692893B2 Onium salts, photoacid generators, resist compositions, and patterning process 有权
标题翻译：鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US06692893B2
公开(公告)日：2004-02-17
申请号：US09983155
申请日：2001-10-23
申请人： Youichi Ohsawa , Jun Watanabe , Takeshi Nagata , Jun Hatakeyama
发明人： Youichi Ohsawa , Jun Watanabe , Takeshi Nagata , Jun Hatakeyama
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.
摘要翻译：芳基磺酰氧基萘磺酸盐与碘鎓或锍阳离子的鎓盐是新颖的。包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，因为许多优点，包括改进的分辨率，改善的焦点纬度，最小化的线宽变化或甚至在长期PED下的形状退化涂层，显影和剥离后的碎屑，以及显影后改进的图案轮廓。

5. 发明授权

US5849461A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5849461A
公开(公告)日：1998-12-15
申请号：US684395
申请日：1996-07-19
申请人： Jun Hatakeyama , Shigehiro Nagura , Kiyoshi Motomi , Takeshi Nagata , Toshinobu Ishihara
发明人： Jun Hatakeyama , Shigehiro Nagura , Kiyoshi Motomi , Takeshi Nagata , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039 , G03F7/038
CPC分类号： G03F7/039 , G03F7/0045
摘要： In a chemically amplified positive resist composition comprising an organic solvent, an acid labile group-protected resin and a photoacid generator, a compound having a weight average molecular weight of 100-1,000 and at least two phenolic hydroxyl groups in a molecule wherein the hydrogen atom of the phenolic hydroxyl group is partially replaced by an acid labile group in an overall average proportion of 10-80% is blended as a dissolution controller. The resist composition is highly sensitive to actinic radiation, has improved sensitivity and resolution, and is suitable for use in a fine patterning technique and commercially acceptable.
摘要翻译：在包含有机溶剂，酸不稳定基团保护的树脂和光致酸产生剂的化学放大型正性抗蚀剂组合物中，分子中具有重均分子量为100-1,000的化合物和至少两个酚羟基，其中氢原子的酚羟基被酸不稳定基团部分替代，总平均比例为10-80％混合作为溶解控制剂。抗蚀剂组合物对光化辐射高度敏感，具有改进的灵敏度和分辨率，并且适用于精细图案化技术和商业上可接受的。

6. 发明授权

US5750309A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5750309A
公开(公告)日：1998-05-12
申请号：US684481
申请日：1996-07-19
申请人： Jun Hatakeyama , Shigehiro Nagura , Kiyoshi Motomi , Takeshi Nagata , Toshinobu Ishihara
发明人： Jun Hatakeyama , Shigehiro Nagura , Kiyoshi Motomi , Takeshi Nagata , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： In a chemical amplification positive resist composition comprising an organic solvent, a resin and a photoacid generator, at least two polymers having different molecular weights selected from polyhydroxystyrenes having some hydroxyl groups protected with acid labile groups are used. Among the polymers, a high molecular weight polymer has a molecular weight dispersity (Mw1/Mn1) of up to 1.5, and a low molecular weight polymer has a dispersity (Mw2/Mn2) of up to 5.0. The weight average molecular weight ratio Mw1/Mw2 is between 1.5/1 and 10.0/1. The resist composition is highly sensitive to actinic radiation, has improved sensitivity and resolution, and is suitable for use in a fine patterning technique and commercially acceptable.
摘要翻译：在包含有机溶剂，树脂和光致酸发生剂的化学放大正性抗蚀剂组合物中，使用至少两种具有不同分子量的聚合物，其选自具有用酸不稳定基保护的一些羟基的多羟基苯乙烯。在聚合物中，高分子量聚合物的分子量分散性（Mw1 / Mn1）高达1.5，低分子量聚合物的分散性（Mw2 / Mn2）高达5.0。重均分子量Mw1 / Mw2在1.5 / 1和10.0 / 1之间。抗蚀剂组合物对光化辐射高度敏感，具有改进的灵敏度和分辨率，并且适用于精细图案化技术和商业上可接受的。

7. 发明授权

US06274286B1 Resist compositions 失效
标题翻译：抗蚀剂组合物
公开(公告)号：US06274286B1
公开(公告)日：2001-08-14
申请号：US09105003
申请日：1998-06-26
申请人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
发明人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , Y10S430/106
摘要： A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.
摘要翻译：一种化学放大正型抗蚀剂组合物，其包含至少一种下列通式（1）或（2）的碱性化合物：其中R 1，R 2，R 3，R 7和R 8独立地为具有1至20个碳的正，支链或环状亚烷基原子，R 4，R 5，R 6，R 9和R 10独立地是氢，具有1至20个碳原子的烷基或氨基，R 4和R 5，R 5和R 6，R 4和R 6，或R 8，R 5和R 5， R 10一起可以形成环，字母k，m和n是0至20的整数，条件是当k，m或n等于0时，从R4，R5，R6，R9和R10排除氢。本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。

8. 发明申请

US20120225386A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学稳定组合物和图案化方法
公开(公告)号：US20120225386A1
公开(公告)日：2012-09-06
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译：提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。

9. 发明授权

US08628908B2 Chemically amplified resist composition and patterning process 有权
标题翻译：化学扩增抗蚀剂组合物和图案化工艺
公开(公告)号：US08628908B2
公开(公告)日：2014-01-14
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译：提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。

10. 发明申请

US20120220112A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20120220112A1
公开(公告)日：2012-08-30
申请号：US13404824
申请日：2012-02-24
申请人： Jun Hatakeyama , Takeshi Nagata , Taku Morisawa
发明人： Jun Hatakeyama , Takeshi Nagata , Taku Morisawa
IPC分类号： H01L21/265 , G03F7/20 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0397 , G03F7/085 , H01L21/265
摘要： A positive resist composition based on a polymer comprising recurring units of (meth)acrylate having a cyclic acid labile group and a dihydroxynaphthalene novolak resin, and containing a photoacid generator is improved in resolution, step coverage and adhesion on a highly reflective stepped substrate, has high resolution, and forms a pattern of good profile and minimal edge roughness through exposure and development.
摘要翻译：具有包含具有环酸不稳定基团的（甲基）丙烯酸酯和二羟基萘酚醛清漆树脂的重复单元并含有光酸产生剂的聚合物的正性抗蚀剂组合物在高反射性阶梯基材上的分辨率，台阶覆盖率和粘附性得到改善，具有高分辨率，并且通过曝光和显影形成良好轮廓和最小边缘粗糙度的图案。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式