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1. 发明申请

US20120225386A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学稳定组合物和图案化方法
公开(公告)号：US20120225386A1
公开(公告)日：2012-09-06
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译：提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。

2. 发明授权

US08628908B2 Chemically amplified resist composition and patterning process 有权
标题翻译：化学扩增抗蚀剂组合物和图案化工艺
公开(公告)号：US08628908B2
公开(公告)日：2014-01-14
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译：提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。

3. 发明授权

US08703384B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08703384B2
公开(公告)日：2014-04-22
申请号：US13303302
申请日：2011-11-23
申请人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
发明人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
摘要翻译：一种正型抗蚀剂组合物，其包含（A）包含特定结构的重复单元的聚合物，所述重复单元适于响应于高能量辐射和酸不稳定单元产生酸，所述聚合物具有在酸的作用下增加的碱溶解度，以及（B）特定结构的锍盐在形成精细尺寸图案（通常是沟槽图案和孔图案）中表现出高分辨率。轮廓，DOF和粗糙度的光刻性能得到改善。

4. 发明申请

US20120135350A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20120135350A1
公开(公告)日：2012-05-31
申请号：US13303302
申请日：2011-11-23
申请人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
发明人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
摘要翻译：一种正型抗蚀剂组合物，其包含（A）包含特定结构的重复单元的聚合物，所述重复单元适于响应于高能量辐射和酸不稳定单元产生酸，所述聚合物具有在酸的作用下增加的碱溶解度，以及（B）特定结构的锍盐在形成精细尺寸图案（通常是沟槽图案和孔图案）中表现出高分辨率。轮廓，DOF和粗糙度的光刻性能得到改善。

5. 发明申请

US20120135357A1 POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS 审中-公开
标题翻译：聚合物，阳性抗蚀剂组合物和方法
公开(公告)号：US20120135357A1
公开(公告)日：2012-05-31
申请号：US13303283
申请日：2011-11-23
申请人： Tomohiro KOBAYASHI , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Kenji Funatsu , Seiichiro Tachibana
发明人： Tomohiro KOBAYASHI , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Kenji Funatsu , Seiichiro Tachibana
IPC分类号： G03F7/20 , C08F214/18
CPC分类号： G03F7/2041 , C08K5/375 , C08K5/42 , C08L41/00 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A positive resist composition comprising a polymer comprising recurring units of a specific structure adapted to generate an acid upon exposure to high-energy radiation, recurring units of a lactone ring-containing structure, and acid labile units, all the recurring units being free of hydroxyl, can form a fine size pattern having a rectangular profile and improved collapse resistance.
摘要翻译：一种正性抗蚀剂组合物，其包含聚合物，其包含适于在暴露于高能量辐射时产生酸的特定结构的重复单元，含内酯环结构的重复单元和酸不稳定单元，所有重复单元不含羟基可以形成具有矩形轮廓和改进的抗倒塌性的精细尺寸图案。

6. 发明授权

US08795942B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08795942B2
公开(公告)日：2014-08-05
申请号：US12000284
申请日：2007-12-11
申请人： Tomohiro Kobayashi , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Tomohiro Kobayashi , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , G03F7/0045
摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
摘要翻译：公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光器的高能束作为光源显着地提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。

7. 发明申请

US20080153030A1 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US20080153030A1
公开(公告)日：2008-06-26
申请号：US12000284
申请日：2007-12-11
申请人： Tomohiro Kobayashi , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Tomohiro Kobayashi , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/039 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0045
摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
摘要翻译：公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光的高能束作为光源显着提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。

8. 发明授权

US08748076B2 Resist composition and patterning process using the same 有权
标题翻译：抗蚀剂组成和图案化工艺使用相同
公开(公告)号：US08748076B2
公开(公告)日：2014-06-10
申请号：US13345355
申请日：2012-01-06
申请人： Takayuki Nagasawa , Tomohiro Kobayashi , Ryosuke Taniguchi , Masaki Ohashi
发明人： Takayuki Nagasawa , Tomohiro Kobayashi , Ryosuke Taniguchi , Masaki Ohashi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.
摘要翻译：公开了一种抗蚀剂组合物，其至少包含：（A）含有一个或多个具有下列通式（1）和/或（2）所示结构的重复单元的聚合物，该聚合物的碱溶性通过一种酸，（B）一种光酸反应器，其响应于高能束，产生由以下通式（3）表示的磺酸，和（C）由以下通式（4）表示的磺酸盐。可以存在不仅具有优异的LWR和图案轮廓的抗蚀剂组合物，而且还具有极好的抗倒伏性能，并且提供使用其的图案化工艺。

9. 发明申请

US20130101936A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：积极的组合和绘图过程
公开(公告)号：US20130101936A1
公开(公告)日：2013-04-25
申请号：US13616317
申请日：2012-09-14
申请人： Ryosuke Taniguchi , Tomohiro Kobayashi , Jun Hatakeyama , Kenji Funatsu , Masahiro Kanayama
发明人： Ryosuke Taniguchi , Tomohiro Kobayashi , Jun Hatakeyama , Kenji Funatsu , Masahiro Kanayama
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (B) a photoacid generator, and (C) a solvent forms a fine pattern with improved LWR, improved MEF, rectangular profile, and collapse resistance.
摘要翻译：一种正型抗蚀剂组合物，其包含（A）包含含有酸不稳定基团的重复单元的聚合物，具有内酯环的重复单元和具有环氧乙烷环的重复单元的聚合物，所述聚合物适于在酸的作用下增加碱溶解性（ B）光致酸发生器，（C）溶剂形成具有改善的LWR，改进的MEF，矩形轮廓和抗倒塌性的精细图案。

10. 发明授权

US07727704B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US07727704B2
公开(公告)日：2010-06-01
申请号：US11773706
申请日：2007-07-05
申请人： Ryosuke Taniguchi , Tsunehiro Nishi , Tomohiro Kobayashi
发明人： Ryosuke Taniguchi , Tsunehiro Nishi , Tomohiro Kobayashi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译：在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H，甲基或三氟甲基，R2和R3是烷基，R4是一价烃基，X1是O，S或CH2CH2，X2是O，S，CH2或CH2CH2，n是1或2，a1，a2，c，d1和d2 各自为0至小于1，b为0.01至小于1，a1 + a2 + b + c + d1 + d2 = 1。当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

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