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1. 发明授权

US08993413B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08993413B2
公开(公告)日：2015-03-31
申请号：US13708358
申请日：2012-12-07
申请人： Kazunari Nakata , Yoshiaki Terasaki
发明人： Kazunari Nakata , Yoshiaki Terasaki
IPC分类号： H01L21/00 , H01L21/02 , H01L21/78 , H01L21/683
CPC分类号： H01L21/02005 , H01L21/6836 , H01L21/78 , H01L2221/68331
摘要： A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor wafer having a thick portion in an outer circumferential end portion and a thin portion in a central portion, attaching a support material to one surface of the semiconductor wafer, dividing the semiconductor wafer into the thick portion and the thin portion, and cutting the thin portion, after the division, while supporting the thin portion by the support material.
摘要翻译：一种制造半导体器件的方法包括以下步骤：制备半导体晶片，该半导体晶片在外周端部具有厚壁部分，在中心部分形成薄壁部分，将支撑材料附着到半导体晶片的一个表面，将半导体晶片进入厚部分和薄部分，并且在分割之后切割薄部分，同时通过支撑材料支撑薄部分。

2. 发明申请

US20120214278A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120214278A1
公开(公告)日：2012-08-23
申请号：US13231198
申请日：2011-09-13
申请人： Kazunari NAKATA , Yoshiaki Terasaki
发明人： Kazunari NAKATA , Yoshiaki Terasaki
IPC分类号： H01L21/50 , H01L21/31 , H01L21/302
CPC分类号： H01L29/66333 , H01L21/304 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： A method of manufacturing a semiconductor device comprises the steps of (a) applying a resin member onto a front surface of a semiconductor wafer having an uneven structure on the front surface thereof, and (b) flattening a surface of the resin member by heating the resin member, and in the method, the resin member is formed also on a side surface of the semiconductor wafer. The method further comprises the steps of (c) performing a thinning process for the semiconductor wafer on a back surface thereof after the step (b), and (d) removing the resin member from the semiconductor wafer after the step (c). By the method, it is possible to uniformize the thickness of a semiconductor wafer which is thinned and reduce the number of foreign matters remaining on a surface of the semiconductor wafer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（a）将树脂部件施加到其表面上具有不均匀结构的半导体晶片的正面上，以及（b）通过加热所述树脂部件的表面来使所述树脂部件的表面平坦化树脂构件，并且在该方法中，树脂构件也形成在半导体晶片的侧表面上。该方法还包括以下步骤：（c）在步骤（b）之后，在其后表面上对半导体晶片进行稀化处理，和（d）在步骤（c）之后从半导体晶片去除树脂构件。通过该方法，可以使被稀释的半导体晶片的厚度均匀化并且减少残留在半导体晶片的表面上的异物的数量。

3. 发明授权

US09324581B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09324581B2
公开(公告)日：2016-04-26
申请号：US13739946
申请日：2013-01-11
申请人： Kazunari Nakata , Yoshiaki Terasaki
发明人： Kazunari Nakata , Yoshiaki Terasaki
IPC分类号： H01L21/50 , H01L21/67 , H01L21/683
CPC分类号： H01L21/50 , H01L21/67115 , H01L21/67132 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： A wafer is mounted to a dicing frame using a holding tape. A plurality of semiconductor devices are provided on a center portion of a major surface of the wafer. A ring-like reinforcing section is provided on a periphery of the major surface. The holding tape is adhered to the major surface The holding tape is heated to at least 0.6 times of melting temperature of the holding tape so as to adhere the holding tape along a step of the ring-like reinforcing section.
摘要翻译：使用保持带将晶片安装到切割框架。在晶片的主表面的中心部分设置多个半导体器件。在主表面的周围设有环状的加强部。保持带粘附到主表面上。将保持带加热至保持带的熔融温度的至少0.6倍，以便沿着环状加强部的台阶粘合保持带。

4. 发明申请

US20130203241A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130203241A1
公开(公告)日：2013-08-08
申请号：US13708358
申请日：2012-12-07
申请人： Kazunari Nakata , Yoshiaki Terasaki
发明人： Kazunari Nakata , Yoshiaki Terasaki
IPC分类号： H01L21/02
CPC分类号： H01L21/02005 , H01L21/6836 , H01L21/78 , H01L2221/68331
摘要： A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor wafer having a thick portion in an outer circumferential end portion and a thin portion in a central portion, attaching a support material to one surface of the semiconductor wafer, dividing the semiconductor wafer into the thick portion and the thin portion, and cutting the thin portion, after the division, while supporting the thin portion by the support material.
摘要翻译：一种制造半导体器件的方法包括以下步骤：制备半导体晶片，该半导体晶片在外周端部具有厚壁部分，在中心部分形成薄壁部分，将支撑材料附着到半导体晶片的一个表面，将半导体晶片进入厚部分和薄部分，并且在分割之后切割薄部分，同时通过支撑材料支撑薄部分。

5. 发明授权

US08574962B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08574962B2
公开(公告)日：2013-11-05
申请号：US13231198
申请日：2011-09-13
申请人： Kazunari Nakata , Yoshiaki Terasaki
发明人： Kazunari Nakata , Yoshiaki Terasaki
IPC分类号： H01L21/00
CPC分类号： H01L29/66333 , H01L21/304 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： A method of manufacturing a semiconductor device comprises the steps of (a) applying a resin member onto a front surface of a semiconductor wafer having an uneven structure on the front surface thereof, and (b) flattening a surface of the resin member by heating the resin member, and in the method, the resin member is formed also on a side surface of the semiconductor wafer. The method further comprises the steps of (c) performing a thinning process for the semiconductor wafer on a back surface thereof after the step (b), and (d) removing the resin member from the semiconductor wafer after the step (c). By the method, it is possible to uniformize the thickness of a semiconductor wafer which is thinned and reduce the number of foreign matters remaining on a surface of the semiconductor wafer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（a）将树脂部件施加到其表面上具有不均匀结构的半导体晶片的正面上，以及（b）通过加热所述树脂部件的表面来使所述树脂部件的表面平坦化树脂构件，并且在该方法中，树脂构件也形成在半导体晶片的侧表面上。该方法还包括以下步骤：（c）在步骤（b）之后，在其后表面上对半导体晶片进行稀化处理，和（d）在步骤（c）之后从半导体晶片去除树脂构件。通过该方法，可以使被稀释的半导体晶片的厚度均匀化并且减少残留在半导体晶片的表面上的异物的数量。

6. 发明申请

US20120309117A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120309117A1
公开(公告)日：2012-12-06
申请号：US13358868
申请日：2012-01-26
申请人： Yuichiro SUZUKI , Atsushi Narazaki , Yoshiaki Terasaki
发明人： Yuichiro SUZUKI , Atsushi Narazaki , Yoshiaki Terasaki
IPC分类号： H01L21/66
CPC分类号： H01L29/0847 , H01L22/12 , H01L22/20 , H01L23/3107 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/0834 , H01L29/36 , H01L29/66348 , H01L29/7397 , H01L2224/29101 , H01L2224/29339 , H01L2224/32245 , H01L2224/45124 , H01L2224/45147 , H01L2224/48247 , H01L2224/4847 , H01L2224/4911 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/0781 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： A method for manufacturing a semiconductor device wherein a semiconductor element is sealed with mold resin, a MOS structure is on an upper side of the semiconductor chip, and a PN junction region is on a back side of the semiconductor chip, comprises: obtaining an in-plane distribution of impurity concentration of the PN junction region in the semiconductor chip before encapsulation so that an in-plane distribution of breakdown voltage and leakage current of the semiconductor chip become uniform after encapsulation; forming the PN junction region having the obtained in-plane distribution of impurity concentration on the back side of the semiconductor chip; and sealing the semiconductor chip with the resin after forming the PN junction region.
摘要翻译：一种半导体器件的制造方法，其中半导体元件用模制树脂密封，MOS结构位于半导体芯片的上侧，并且PN结区域位于半导体芯片的背面，包括：在封装之前在半导体芯片中的PN结区域的杂质浓度的平面分布，使得在封装之后半导体芯片的击穿电压和漏电流的面内分布变得均匀; 在半导体芯片的背面上形成具有所获得的杂质浓度的面内分布的PN结区域; 并在形成PN结区域之后用树脂密封半导体芯片。

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