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1. 发明申请

US20110059612A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110059612A1
公开(公告)日：2011-03-10
申请号：US12827259
申请日：2010-06-30
申请人： Kazunari NAKATA , Kaoru Motonami , Atsushi Narazaki , Ayumu Onoyama , Shigeto Honda , Ryoichi Fujii , Tomoya Hirata
发明人： Kazunari NAKATA , Kaoru Motonami , Atsushi Narazaki , Ayumu Onoyama , Shigeto Honda , Ryoichi Fujii , Tomoya Hirata
IPC分类号： H01L21/302
CPC分类号： H01L21/3083 , H01L21/304 , H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/30105 , H01L2924/00
摘要： A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear surface. The ground rear surface is etched by discharging a mixed acid onto the rear surface while rotating the semiconductor substrate with the rear surface facing upward, to remove a fracture layer. Thereby, chipping or cracking of the semiconductor substrate is suppressed.
摘要翻译：在半导体衬底的前表面上形成有从外周端向内侧具有预定宽度且沿外周端部延伸的钝化膜。通过研磨半导体衬底的外周端部形成与前表面和后表面正交的外周端面。通过研磨后表面将半导体衬底的厚度减小到预定厚度。通过将混合酸排放到后表面上同时使后表面朝上的半导体衬底旋转来蚀刻地面后表面，以除去断裂层。由此，能够抑制半导体基板的切削或破裂。

2. 发明申请

US20110089487A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110089487A1
公开(公告)日：2011-04-21
申请号：US12836922
申请日：2010-07-15
申请人： Kazunari NAKATA , Atsushi Narazaki , Shigeto Honda , Kaoru Motonami
发明人： Kazunari NAKATA , Atsushi Narazaki , Shigeto Honda , Kaoru Motonami
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/66734 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a base layer that has a first conductivity type, a source layer that is formed on the base layer and has a second conductivity type, and an insulating film that is formed on the source layer. The semiconductor device further includes a plurality of gate structures that penetrate the base layer, and a plurality of conductive parts that penetrate the insulating film and the source layer and electrically connect the source layer and the base layer to each other. The gate structures are formed in a strip shape in plan view. Parts in which the conductive portion is connected to the base layer are formed in a stripe shape in plan view, and are formed between the gate structures. Further, a dimension of the part in which the source layer and the base layer are in contact with each other between the gate structure and the conductive portion is 0.36 μm or more.
摘要翻译：半导体器件包括具有第一导电类型的基极层，形成在基极层上并具有第二导电类型的源极层，以及形成在源极层上的绝缘膜。半导体器件还包括穿透基底层的多个栅极结构，以及穿透绝缘膜和源极层并将源极层和基极层彼此电连接的多个导电部件。栅极结构在平面图中形成为带状。导电部分连接到基底层的部分在平面图中形成为条形，并且形成在栅极结构之间。此外，栅极结构和导电部之间的源极层和基极层彼此接触的部分的尺寸为0.36μm以上。

3. 发明申请

US20130267065A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130267065A1
公开(公告)日：2013-10-10
申请号：US13739946
申请日：2013-01-11
申请人： Kazunari NAKATA , Yoshiaki TERASAKI
发明人： Kazunari NAKATA , Yoshiaki TERASAKI
IPC分类号： H01L21/50
CPC分类号： H01L21/50 , H01L21/67115 , H01L21/67132 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： A wafer is mounted to a dicing frame using a holding tape. A plurality of semiconductor devices are provided on a center portion of a major surface of the wafer. A ring-like reinforcing section is provided on a periphery of the major surface. The holding tape is adhered to the major surface The holding tape is heated to at least 0.6 times of melting temperature of the holding tape so as to adhere the holding tape along a step of the ring-like reinforcing section.
摘要翻译：使用保持带将晶片安装到切割框架。在晶片的主表面的中心部分设置多个半导体器件。在主表面的周围设有环状的加强部。保持带粘附到主表面上。将保持带加热至保持带的熔融温度的至少0.6倍，以便沿着环状加强部的台阶粘合保持带。

4. 发明申请

US20120214278A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120214278A1
公开(公告)日：2012-08-23
申请号：US13231198
申请日：2011-09-13
申请人： Kazunari NAKATA , Yoshiaki Terasaki
发明人： Kazunari NAKATA , Yoshiaki Terasaki
IPC分类号： H01L21/50 , H01L21/31 , H01L21/302
CPC分类号： H01L29/66333 , H01L21/304 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： A method of manufacturing a semiconductor device comprises the steps of (a) applying a resin member onto a front surface of a semiconductor wafer having an uneven structure on the front surface thereof, and (b) flattening a surface of the resin member by heating the resin member, and in the method, the resin member is formed also on a side surface of the semiconductor wafer. The method further comprises the steps of (c) performing a thinning process for the semiconductor wafer on a back surface thereof after the step (b), and (d) removing the resin member from the semiconductor wafer after the step (c). By the method, it is possible to uniformize the thickness of a semiconductor wafer which is thinned and reduce the number of foreign matters remaining on a surface of the semiconductor wafer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（a）将树脂部件施加到其表面上具有不均匀结构的半导体晶片的正面上，以及（b）通过加热所述树脂部件的表面来使所述树脂部件的表面平坦化树脂构件，并且在该方法中，树脂构件也形成在半导体晶片的侧表面上。该方法还包括以下步骤：（c）在步骤（b）之后，在其后表面上对半导体晶片进行稀化处理，和（d）在步骤（c）之后从半导体晶片去除树脂构件。通过该方法，可以使被稀释的半导体晶片的厚度均匀化并且减少残留在半导体晶片的表面上的异物的数量。

5. 发明申请

US20110294233A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110294233A1
公开(公告)日：2011-12-01
申请号：US12981796
申请日：2010-12-30
申请人： Kazunari NAKATA
发明人： Kazunari NAKATA
IPC分类号： H01L21/66
CPC分类号： H01L21/304 , B24B1/00 , B24B7/228 , H01L22/12 , H01L22/20
摘要： Provided is a method of manufacturing a semiconductor device, which includes the steps of: (a) preparing a processing target including a wafer (21) and a protective member (24) formed on the wafer (21); (b) measuring a thickness of the protective member (24) at a plurality of points; and (c) setting a desired value of a total thickness of the wafer (21) and the protective member (24) based on measurement results at the plurality of points to grind the wafer (21) in accordance with the desired value.
摘要翻译：提供一种制造半导体器件的方法，其包括以下步骤：（a）制备包括晶片（21）和形成在晶片（21）上的保护部件的处理目标; （b）在多个点处测量所述保护构件（24）的厚度; 和（c）基于多个点处的测量结果设置晶片（21）和保护构件（24）的总厚度的期望值，以根据期望值研磨晶片（21）。

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