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    • 1. 发明授权
    • Method for manufacturing nonvolatile storage device
    • 非易失性存储装置的制造方法
    • US08153488B2
    • 2012-04-10
    • US12726749
    • 2010-03-18
    • Kazuhito NishitaniEiji ItoMachiko TsukijiHiroyuki FukumizuNaoya HayamizuKatsuhiro Sato
    • Kazuhito NishitaniEiji ItoMachiko TsukijiHiroyuki FukumizuNaoya HayamizuKatsuhiro Sato
    • H01L21/336
    • H01L27/101H01L27/24H01L45/04H01L45/145
    • Manufacturing a nonvolatile storage device including: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a substrate; processing the first electrode film and the first storage unit film into a strip shape; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer on the second electrode film; processing the second electrode film into a strip shape using the mask layer; removing a portion of the first storage unit film exposed from the sacrifice layer using the mask layer processing the first storage unit film into a columnar shape, removing the sacrifice layer exposing the first storage unit film; and removing the exposed first storage unit film.
    • 制造非易失性存储装置,包括:在基板上堆叠形成第一电极的第一电极膜和形成第一存储单元的第一存储单元膜; 将第一电极膜和第一存储单元膜加工成带状; 在经处理​​的第一电极膜之间和处理的第一存储单元膜之间埋设牺牲层; 在所述第一存储单元膜和所述牺牲层上形成形成第二电极的第二电极膜; 在所述第二电极膜上形成掩模层; 使用掩模层将第二电极膜加工成带状; 使用将所述第一存储单元膜处理成柱状的掩模层来除去从所述牺牲层暴露的所述第一存储单元膜的一部分,去除暴露所述第一存储单元膜的所述牺牲层; 以及去除所暴露的第一存储单元膜。
    • 2. 发明申请
    • METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE
    • 制造非易失存储器件的方法
    • US20100248431A1
    • 2010-09-30
    • US12726749
    • 2010-03-18
    • Kazuhito NISHITANIEiji ItoMachiko TsukijiHiroyuki FukumizuNaoya HayamizuKatsuhiro Sato
    • Kazuhito NISHITANIEiji ItoMachiko TsukijiHiroyuki FukumizuNaoya HayamizuKatsuhiro Sato
    • H01L21/822H01L21/02
    • H01L27/101H01L27/24H01L45/04H01L45/145
    • A method for manufacturing a nonvolatile storage device including: a plurality of first electrodes aligning in a first direction; a plurality of second electrodes aligning in a second direction nonparallel to the first direction and provided above the first electrodes; and a first storage unit provided between the first electrode and the second electrode and including a first storage layer, a resistance of the first storage layer changing by at least one of an applied electric field and an applied current, the method includes: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a major surface of a substrate; processing the first electrode film and the first storage unit film into a strip shape aligning in the first direction; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer having a lower etching rate than the sacrifice layer on the second electrode film; processing the second electrode film into a strip shape aligning in the second direction nonparallel to the first direction by using the mask layer as a mask; removing a portion of the first storage unit film exposed from the sacrifice layer by using the mask layer as a mask to process the first storage unit film into a columnar shape including a side wall along the first direction and a side wall along the second direction; removing the sacrifice layer to expose the first storage unit film having been covered with the sacrifice layer; and removing the exposed first storage unit film.
    • 一种非易失性存储装置的制造方法,包括:沿第一方向排列的多个第一电极; 多个第二电极,在与第一方向不平行的第二方向上排列并设置在第一电极之上; 以及第一存储单元,设置在所述第一电极和所述第二电极之间,并且包括第一存储层,所述第一存储层的电阻通过施加的电场和施加的电流中的至少一个而变化,所述方法包括: 形成第一电极的电极膜和在基板的主表面上形成第一存储单元的第一存储单元膜; 将所述第一电极膜和所述第一存储单元膜处理成沿所述第一方向对准的条形; 在经处理​​的第一电极膜之间和处理的第一存储单元膜之间埋设牺牲层; 在所述第一存储单元膜和所述牺牲层上形成形成第二电极的第二电极膜; 形成具有比所述第二电极膜上的牺牲层更低的蚀刻速率的掩模层; 通过使用掩模层作为掩模,将第二电极膜处理成沿与第一方向不平行的第二方向对准的条形; 通过使用掩模层作为掩模去除从牺牲层暴露的第一存储单元膜的一部分,以将第一存储单元膜处理成包括沿着第一方向的侧壁和沿着第二方向的侧壁的柱状; 去除牺牲层以暴露已经被牺牲层覆盖的第一存储单元膜; 以及去除所暴露的第一存储单元膜。