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    • 2. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US08395194B2
    • 2013-03-12
    • US13238537
    • 2011-09-21
    • Haruhisa YokoyamaHiroshi SakohKazuhiro YamashitaMitsuo YasuhiraYuichi Hirofuji
    • Haruhisa YokoyamaHiroshi SakohKazuhiro YamashitaMitsuo YasuhiraYuichi Hirofuji
    • H01L27/148H01L27/146H01L21/00
    • H01L27/14623H01L27/14627H01L27/1464H01L27/14656
    • A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.
    • 根据本发明的固态成像装置是MOS型的,并且包括排列成行和列的多个像素,并且包括:半导体衬底; 形成在所述半导体衬底中并将从所述半导体衬底的第一主表面入射的光转换为信号电荷的光电二极管; 传输晶体管,其形成在半导体衬底的第二主表面中并传送由光电二极管转换的信号电荷; 在半导体衬底的第一主表面之上的像素之间的边界上导电并形成的遮光膜; 与所述遮光膜电连接并形成在所述半导体衬底的所述第一主表面中的溢出漏极区域; 以及形成在溢出漏极区域和光电二极管之间的溢出阻挡区域。
    • 3. 发明授权
    • Semiconductor test system
    • 半导体测试系统
    • US06378098B1
    • 2002-04-23
    • US09264768
    • 1999-03-09
    • Kazuhiro Yamashita
    • Kazuhiro Yamashita
    • G01R3128
    • G01R31/31917
    • A semiconductor test system for efficiently testing a semiconductor device (DUT) having a phase lock loop (PLL) circuit therein. The semiconductor test system includes a first clock and waveform generator for supplying a clock signal to the PLL circuit at a start of the first pattern block, a second clock and waveform generator for supplying pattern data to the DUT during each of the pattern blocks, a pattern generator for generating pattern data, and a timing generator for generating a tester rate signal, a clear signal, and a gate signal for controlling the tester rate signal and the clear signal in the first and second clock and waveform generators. The clock signal is continuously provided to the PLL circuit until the end of the last pattern block while the pattern data to the data pin is reset between the end of the current pattern block and the start of the next pattern block.
    • 一种用于有效测试其中具有锁相环(PLL)电路的半导体器件(DUT)的半导体测试系统。 半导体测试系统包括第一时钟和波形发生器,用于在第一模式块的开始处向PLL电路提供时钟信号;第二时钟和波形发生器,用于在每个模式块期间向DUT提供模式数据, 用于产生图案数据的图形发生器,以及用于产生测试器速率信号,清除信号和用于控制第一和第二时钟和波形发生器中的测试仪速率信号和清除信号的清除信号的定时发生器。 在当前图案块的结束和下一个图案块的开始之间复位到数据引脚的图案数据之前,将时钟信号连续提供给PLL电路,直到最后一个模式块的结束为止。
    • 4. 发明授权
    • Device and method for measuring dynamic torsional characteristics of a damper assembly
    • 用于测量阻尼器组件的动态扭转特性的装置和方法
    • US06253620B1
    • 2001-07-03
    • US09323695
    • 1999-06-02
    • Kazuhiro Yamashita
    • Kazuhiro Yamashita
    • G01D900
    • G01P15/165G01M17/04
    • An object is to enable accurate measurement of dynamic torsional characteristics of a damper assembly. A measuring device measures an angular speed (d&thgr;1/dt) of an input rotary member, an angular speed (d&thgr;2/dt) of an output rotary member and a torque (T1) transmitted to the input rotary member. A torsion angle (&thgr;) of a damper unit is calculated by integrating the angular speeds (d&thgr;1/dt) and (d&thgr;2/dt) of the input and output rotary members. A torque (T) acting on the damper unit is calculated by subtracting a product of an angular acceleration (d2&thgr;1/dt2) of the input rotary member calculated by differentiating the angular speed (d&thgr;1/dt) of the input rotary member and a moment of inertia (I1) of the input rotary member from the torque (T1) transmitted to the input rotary member.
    • 目的是能够精确地测量阻尼器组件的动态扭转特性。测量装置测量输入旋转构件的角速度(dθta/ dt),输出旋转构件的角速度(dθ= 2 / dt)和扭矩 (T1)传输到输入旋转部件。 通过积分输入和输出旋转构件的角速度(dθta/ dt)和(dθta/ dt)来计算阻尼单元的扭转角(θ)。 通过减去通过对输入旋转部件的角速度(dθta/ dt)进行微分而计算出的输入旋转部件的角加速度(d2theta1 / dt2)的乘积,计算作用在减震器单元上的扭矩(T) 输入旋转构件的惯性(I1)从传递到输入旋转构件的扭矩(T1)。
    • 6. 发明授权
    • Evaluation method of resist coating
    • 抗蚀剂涂层的评价方法
    • US5252414A
    • 1993-10-12
    • US747619
    • 1991-08-20
    • Kazuhiro YamashitaHironao IwaiNoboru Nomura
    • Kazuhiro YamashitaHironao IwaiNoboru Nomura
    • G03F7/16G03F7/00G03F7/20H01L21/027H01L21/30H01L21/66G03F9/00
    • G03F7/70633G03F7/0035G03F7/20
    • A method for evaluating a resist coating comprising the steps of: forming a first layer resist pattern including an alignment mark by applying a first resist on a semiconductor substrate and by exposing and developing said first resist, said first layer resist pattern having a ridge portion; irradiating said first layer resist pattern with a deep ultraviolet ray; applying, onto said irradiated first layer resist pattern, a second resist having substantially the same refractive index as said first resist to form a second resist coating; detecting said alignment mark formed in said first layer resist pattern, and relatively positioning a pattern for said second resist and said first layer resist pattern; and determining nonuniformity characteristics of said second resist coating by measuring an overlay accuracy between said first layer resist pattern and said pattern for said second resist. The present invention ensures a quantitative evaluation in a non-contact manner for non-uniformity of a resist coating, and enables a resist coating method to be optimized.
    • 一种抗蚀剂涂层评价方法,其特征在于,包括以下步骤:通过在半导体衬底上施加第一抗蚀剂,通过曝光和显影所述第一抗蚀剂,形成包括对准标记的第一层抗蚀剂图案,所述第一层抗蚀剂图案具有脊部; 用深紫外线照射所述第一层抗蚀剂图案; 在所述照射的第一层抗蚀剂图案上施加具有与所述第一抗蚀剂基本相同的折射率的第二抗蚀剂,以形成第二抗蚀剂涂层; 检测形成在所述第一层抗蚀剂图案中的所述对准标记,并且相对地定位所述第二抗蚀剂和所述第一层抗蚀剂图案的图案; 以及通过测量所述第一层抗蚀剂图案和所述第二抗蚀剂的所述图案之间的覆盖精度来确定所述第二抗蚀剂涂层的不均匀性。 本发明确保以非接触方式对抗蚀剂涂层的不均匀性进行定量评价,并且能够优化抗蚀剂涂布方法。
    • 10. 发明授权
    • Sensor control circuit
    • 传感器控制电路
    • US07363190B2
    • 2008-04-22
    • US11723252
    • 2007-03-19
    • Kazuhiro YamashitaKazuhiro Tomita
    • Kazuhiro YamashitaKazuhiro Tomita
    • G06F19/00
    • G01P15/0891G01P15/18G11B19/04
    • A sensor control circuit includes an acceleration sensor which detects acceleration and generates a detection signal. The sensor control circuit also includes a processing section which generates a calculation result by calculating the acceleration in accordance with the detection signal, and generates an interrupt notification. The sensor control circuit also includes an interrupt output circuit. The interrupt output circuit has a threshold value determination section which generates a detection result by determining a change condition. The change condition is determined by comparing the calculation result with the threshold value. The interrupt output circuit also has a plurality of INT terminals and a selection section. The selection section selects the detection result or the interruption notification in accordance with mode information which is set from a host CPU and sends the selected signal from the INT terminal through the associated INT terminal.
    • 传感器控制电路包括检测加速度并产生检测信号的加速度传感器。 传感器控制电路还包括处理部,其通过根据检测信号计算加速度来生成计算结果,并生成中断通知。 传感器控制电路还包括一个中断输出电路。 中断输出电路具有阈值确定部分,其通过确定改变状况来产生检测结果。 通过将计算结果与阈值进行比较来确定变化条件。 中断输出电路还具有多个INT端子和选择部分。 选择部分根据从主机CPU设置的模式信息来选择检测结果或中断通知,并通过相关联的INT端口从INT终端发送所选择的信号。