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1. 发明授权

US07583482B2 Magnetoresistive element and magnetoresistive device having a free layer stabilized by an in-stack bias 有权
标题翻译：具有通过叠层间偏压稳定的自由层的磁阻元件和磁阻器件
公开(公告)号：US07583482B2
公开(公告)日：2009-09-01
申请号：US10998637
申请日：2004-11-30
申请人： Rachid Sbiaa , Isamu Sato , Haruyuki Morita
发明人： Rachid Sbiaa , Isamu Sato , Haruyuki Morita
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3909 , G11B5/3932 , G11B2005/0018 , G11B2005/0029 , G11B2005/3996
摘要： An in-stack bias is provided for stabilizing the free layer of a ballistic magneto resistive (BMR) sensor. In-stack bias includes a decoupling layer that is a spacer between the free layer and a ferromagnetic stabilizer layer of the in-stack bias, and an anti-ferromagnetic layer positioned above the ferromagnetic layer. The spacer is a nano-contact layer having magnetic particles positioned in a non-magnetic matrix. The free layer may be single layer, composed or synthetic, and the in-stack bias may be laterally bounded by the sidewalls, or alternatively, extend above the sidewalls and spacer. Additionally, a hard bias may also be provided. The spacer of the in-stack bias results in the reduction of the exchange coupling between the free layer and ferromagnetic stabilizing layer, an improved AΔR due to confinement of current flow through a smaller area, and increased MR due to the domain wall created within the magnetic nano-contact.
摘要翻译：提供堆叠偏压以稳定弹道磁阻（BMR）传感器的自由层。堆叠内偏压包括去耦层，其是自由层与堆叠内偏压的铁磁稳定层之间的隔离层，以及位于铁磁层上方的反铁磁层。间隔物是具有位于非磁矩阵中的磁性颗粒的纳米接触层。自由层可以是单层的，组成的或合成的，叠层间偏压可以由侧壁横向界定，或者替代地在侧壁和间隔物上方延伸。另外，还可以提供硬偏压。堆叠偏压的间隔物导致自由层和铁磁稳定层之间的交换耦合的减少，由于电流流过较小区域的限制而导致的改进的ADeltaR以及由于在磁性纳米接触。

2. 发明授权

US07173797B2 Thin-film magnetic head 有权
标题翻译：薄膜磁头
公开(公告)号：US07173797B2
公开(公告)日：2007-02-06
申请号：US10760669
申请日：2004-01-21
申请人： Rachid Sbiaa
发明人： Rachid Sbiaa
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/313 , G11B5/3143 , G11B5/3173 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3263 , H01F10/3268
摘要： The thin-film magnetic head of the present invention is a CPP type head and comprises an anti-ferromagnetic layer, a pinned layer, a free layer, and a nonmagnetic layer disposed between the pinned layer and the free layer. The pinned layer is provided with a multilayer part comprising a first layer formed from Cu; a second layer formed from Cu and disposed closer to the free layer than is the first layer; and an intermediate layer. The intermediate layer is disposed between the first and second layers while in contact therewith, and is formed with a partly oxidized ferromagnetic layer.
摘要翻译：本发明的薄膜磁头是CPP型磁头，它包括设置在固定层和自由层之间的反铁磁层，被钉扎层，自由层和非磁性层。被钉扎层设置有包括由Cu形成的第一层的多层部分; 由Cu形成并且比第一层更靠近自由层设置的第二层; 和中间层。中间层设置在第一和第二层之间，同时与其接触，并且形成有部分氧化的铁磁层。

3. 发明申请

US20060114616A1 Film and method for producing nano-particles for magnetoresistive device 审中-公开
标题翻译：用于制造用于磁阻器件的纳米颗粒的膜和方法
公开(公告)号：US20060114616A1
公开(公告)日：2006-06-01
申请号：US10998597
申请日：2004-11-30
申请人： Rachid Sbiaa , Isamu Sato , Haruyuki Morita
发明人： Rachid Sbiaa , Isamu Sato , Haruyuki Morita
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： C23C14/46 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G11B5/3903 , H01F10/3227 , H01F10/3272 , H01F41/18 , H01F41/301 , H01F41/305 , H01L43/12
摘要： A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.
摘要翻译：提供一种生产用于具有纳米收缩间隔物的磁阻（MR）传感器的自旋阀中的薄膜的方法。自旋阀的底部沉积到被钉扎层，设置沉积室，并且间隔层溅射在其上。主离子束产生离子到包括磁性芯片和绝缘体材料的复合表面上。同时，辅助离子束将离子直接提供给衬底，从而提高了自由层的柔软度和间隔层的平滑度。还提供中和剂以防止离子排斥并改善离子束聚焦。结果，可以形成薄膜间隔物，并且形成自由层和被钉扎层之间具有低自由层矫顽力和低层间耦合的纳米收缩的MR自旋阀。

4. 发明申请

US20050186452A1 CPP GMR and magnetostriction improvement by laminating Co90Fe10 free layer with thin Fe50Co50 layers 有权
标题翻译：通过层压具有薄Fe50Co50层的Co90Fe10自由层的CPP GMR和磁致伸缩改进
公开(公告)号：US20050186452A1
公开(公告)日：2005-08-25
申请号：US10786806
申请日：2004-02-25
申请人： Kunliang Zhang , Min Li , Rachid Sbiaa , Simon Liao , Yue Liu
发明人： Kunliang Zhang , Min Li , Rachid Sbiaa , Simon Liao , Yue Liu
IPC分类号： G11B5/39 , G11B5/127 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： G11B5/3903 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type and its method of formation are disclosed, the sensor including a novel laminated free layer having ultra-thin (less than 3 angstroms thickness) laminas of Fe50 Co50 (or any iron rich alloy of the form CoxFe1-x with x between 0.25 and 0.75) interspersed with thicker layers of Co90Fe10 and Cu spacer layers to produce a free layer with good coercivity, a coefficient of magnetostriction that can be varied between positive and negative values and a high GMR ratio, due to enhancement of the bulk scattering coefficient by the laminas. The configuration of the lamina and layers in periodic groupings allow the coefficient of magnetostriction to be finely adjusted and the coercivity and GMR ratio to be optimized. The sensor performance can be further improved by including layers of Cu and Fe50Co50 in the synthetic antiferromagnetic pinned layer.
摘要翻译：公开了合成自旋阀型的电流垂直平面（CPP）巨磁阻（GMR）传感器及其形成方法，该传感器包括具有超薄（小于3埃厚度）的新型层叠自由层， Fe O 50 Co 50（或任何形式为Fe x Fe 1-x x的任何富含铁的合金）的薄片与 x在0.25和0.75之间）散布有较厚层的Co 90 N 10 N 10和Cu间隔层，以产生具有良好矫顽力的自由层，可以变化的磁致伸缩系数在正值和负值之间，高GMR比，由于片层散体系的增强。周期性分组中的薄层和层的配置允许精细调节磁致伸缩系数，并优化矫顽力和GMR比。通过在合成的反铁磁性钉扎层中包含Cu和Fe 50 Co 50层，可以进一步提高传感器性能。

5. 发明申请

US20050111144A1 Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact 有权
标题翻译：磁阻元件和器件设置有具有磁性纳米接触的磁阻元件
公开(公告)号：US20050111144A1
公开(公告)日：2005-05-26
申请号：US10949352
申请日：2004-09-27
申请人： Rachid Sbiaa
发明人： Rachid Sbiaa
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element including a pinned layer in exchange coupling with an antiferromagnetic layer, a free layer whose magnetization rotates or switches according to a media magnetic field, an intermediate layer between the free layer and the pinned layer. The intermediate layer including magnetic grains surrounded by an insulator, and the magnetic grains connect the free and pinned layer by means of a nano contact.
摘要翻译：磁阻元件包括与反铁磁层交换耦合的钉扎层，其磁化根据介质磁场旋转或切换的自由层，在自由层和被钉扎层之间的中间层。中间层包括由绝缘体包围的磁性颗粒，并且磁性颗粒通过纳米接触连接自由和被钉扎层。

6. 发明申请

US20050068687A1 Magnetoresistance effect element, method of manufacturing same and magnetic head utilizing same 有权
标题翻译：磁阻效应元件，制造方法及使用磁头的磁头
公开(公告)号：US20050068687A1
公开(公告)日：2005-03-31
申请号：US10882179
申请日：2004-07-02
申请人： Rachid Sbiaa , Isamu Sato
发明人： Rachid Sbiaa , Isamu Sato
IPC分类号： G11B5/39 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01L43/08 , G11B5/3903 , H01L43/12
摘要： A magnetoresistance effect element is manufactured in the steps in which a first ferromagnetic layer is formed on a substrate, the first ferromagnetic layer is patterned to form a pinned layer, in shape of strip, having both end portions to which electrode pads are formed, the pinned layer is etched, for example, through ion milling, so as to form at least one nano-contact portion, an insulating layer is formed by embedding an insulating material into the etched pinned layer around the nano-contact portion, a second ferromagnetic layer is formed so as to contact at least the nano-contact portion, and this second ferromagnetic layer is patterned to form a free layer, in shape of strip, having both end portions to which electrode pads are formed.
摘要翻译：在基板上形成第一铁磁层的步骤中制造磁阻效应元件，第一铁磁层被图案化以形成具有形成电极焊盘的两个端部的带状形状的钉扎层，例如通过离子研磨蚀刻被钉扎层，以便形成至少一个纳米接触部分，通过将绝缘材料嵌入到围绕纳米接触部分的蚀刻的钉扎层中形成绝缘层，第二铁磁层形成为至少与纳米接触部分接触，并且该第二铁磁层被图案化以形成带状的自由层，其具有形成有电极焊盘的两个端部部分。

7. 发明申请

US20130161770A1 MAGNETORESISTIVE DEVICE AND A METHOD OF FORMING THE SAME 有权
标题翻译：磁电装置及其形成方法
公开(公告)号：US20130161770A1
公开(公告)日：2013-06-27
申请号：US13725902
申请日：2012-12-21
申请人： Hao MENG , Rachid SBIAA
发明人： Hao MENG , Rachid SBIAA
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , H01L43/08 , H01L43/12
摘要： According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a fixed magnetic layer structure having a fixed magnetization orientation along a first easy axis, a free magnetic layer structure having a variable magnetization orientation along a second easy axis, and an offsetting magnetic layer structure having a magnetization orientation along an axis at least substantially non-parallel to at least one of the first easy axis or the second easy axis, wherein the fixed magnetic layer structure, the free magnetic layer structure and the offsetting magnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided.
摘要翻译：根据本发明的实施例，提供了一种磁阻器件。磁阻器件包括具有沿着第一容易轴的固定磁化取向的固定磁性层结构，沿着第二容易轴具有可变磁化取向的自由磁性层结构以及具有沿轴线的轴线的磁化取向的偏移磁性层结构至少基本上不平行于所述第一容易轴或所述第二容易轴中的至少一个，其中所述固定磁性层结构，所述自由磁性层结构和所述抵消磁性层结构彼此排列。根据本发明的另外的实施例，还提供了形成磁阻器件的方法。

8. 发明申请

US20130059168A1 Magnetoresistance Device 审中-公开
标题翻译：磁阻器件
公开(公告)号：US20130059168A1
公开(公告)日：2013-03-07
申请号：US13599169
申请日：2012-08-30
申请人： Taiebeh Tahmasebi , Seidikkurippu Nellainayagam Piramanayagam , Rachid Sbiaa
发明人： Taiebeh Tahmasebi , Seidikkurippu Nellainayagam Piramanayagam , Rachid Sbiaa
IPC分类号： G11C7/00
CPC分类号： H01F10/3272 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10 , Y10T428/1121
摘要： A magnetoresistance device is provided. The magnetoresistance device includes a hard magnetic layer, and a soft magnetic layer having a multi-layer stack structure. The multi-layer stack structure has a first layer of a first material and a second layer of a second material. The first material includes cobalt iron boron and the second material includes palladium or platinum.
摘要翻译：提供了一种磁阻器件。磁阻装置包括硬磁性层和具有多层堆叠结构的软磁性层。多层堆叠结构具有第一材料的第一层和第二材料的第二层。第一种材料包括钴铁硼，第二种材料包括钯或铂。

9. 发明授权

US07733611B2 Magnetoresistance effect element comprising nano-contact portion not more than a mean free path and magnetic head utilizing same 失效
标题翻译：磁阻效应元件包括不超过平均自由程的纳米接触部分和利用其的磁头
公开(公告)号：US07733611B2
公开(公告)日：2010-06-08
申请号：US11679814
申请日：2007-02-27
申请人： Isamu Sato , Rachid Sbiaa
发明人： Isamu Sato , Rachid Sbiaa
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11B5/3912
摘要： A magnetoresistance effect element comprises a free layer composed of a ferromagnetic layer, a pinned layer composed of a ferromagnetic layer, and a layer disposed between the free layer and the pinned layer and including at least one nano-contact portion disposed at least one portion between the free layer and the pinned layer. The nano-contact portion has a dimension, including at least one of a length in the layer lamination direction and a length in a direction normal to the layer lamination direction, being not more than Fermi length. The nano-contact portion is provided, in an inside portion thereof, with a magnetic wall composed of either one of Bloch magnetic wall, Nëel magnetic wall or a combination wall thereof.
摘要翻译：磁阻效应元件包括由铁磁层组成的自由层，由铁磁层组成的被钉扎层和设置在自由层和钉扎层之间的层，并且包括至少一个纳米接触部分，自由层和钉扎层。纳米接触部分具有包括层叠方向上的长度和垂直于层叠方向的方向上的长度中的至少一个的尺寸，不大于费米长度。纳米接触部分在其内部设置有由布洛赫磁性壁，奈尔磁性壁或其组合壁中的任一个组成的磁性壁。

10. 发明申请

US20090009915A1 FILM AND METHOD FOR PRODUCING NANO-PARTICLES FOR MAGNETORESISTIVE DEVICE 有权
标题翻译：用于制造磁性器件的纳米颗粒的膜和方法
公开(公告)号：US20090009915A1
公开(公告)日：2009-01-08
申请号：US12179293
申请日：2008-07-24
申请人： Rachid Sbiaa , Isamu Sato , Haruyuki Morita
发明人： Rachid Sbiaa , Isamu Sato , Haruyuki Morita
IPC分类号： G11B5/33
CPC分类号： C23C14/46 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G11B5/3903 , H01F10/3227 , H01F10/3272 , H01F41/18 , H01F41/301 , H01F41/305 , H01L43/12
摘要： A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.
摘要翻译：提供一种生产用于具有纳米收缩间隔物的磁阻（MR）传感器的自旋阀中的薄膜的方法。自旋阀的底部沉积到被钉扎层，设置沉积室，并且间隔层溅射在其上。主离子束产生离子到包括磁性芯片和绝缘体材料的复合表面上。同时，辅助离子束将离子直接提供给衬底，从而提高了自由层的柔软度和间隔层的平滑度。还提供中和剂以防止离子排斥并改善离子束聚焦。结果，可以形成薄膜间隔物，并且形成自由层和被钉扎层之间具有低自由层矫顽力和低层间耦合的纳米收缩的MR自旋阀。

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