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1. 发明申请

US20100117098A1 SCHOTTKY ELECTRODE FOR DIAMOND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：肖特基电极用于金刚石半导体器件及其制造方法
公开(公告)号：US20100117098A1
公开(公告)日：2010-05-13
申请号：US12597578
申请日：2008-04-14
申请人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
发明人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
IPC分类号： H01L29/47 , H01L29/12 , H01L21/04
CPC分类号： H01L29/47 , C22C5/04 , H01L21/0435 , H01L29/1602 , H01L29/6603 , H01L29/872
摘要： To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.
摘要翻译：为了在金刚石半导体中提供肖特基电极，该金刚石半导体具有良好的金刚石粘合性，具有由于外部机械压力不均匀而不会剥离的接触表面，在二极管形成过程中不会导致产率降低并且不会导致电流 - 电压特性的劣化，以及制造肖特基电极的方法。一种肖特基电极，其包括：形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜，其中Pt族合金包含Pt为50〜99.9质量％，0.1〜50质量％包括：散射岛状图案金属薄膜，其形成在形成于基板上的金刚石表面上，并且包括选自Pt和Pd中的一种; 以及包括选自Ru，Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。

2. 发明申请

US20090140263A1 METHOD FOR DIAMOND SURFACE TREATMENT AND DEVICE USING DIAMOND THIN FILM 审中-公开
标题翻译：金刚石表面处理方法和使用金刚石薄膜的器件
公开(公告)号：US20090140263A1
公开(公告)日：2009-06-04
申请号：US12300040
申请日：2007-04-27
申请人： Hitoshi Umezawa , Shinichi Shikata , Kazuhiro Ikeda
发明人： Hitoshi Umezawa , Shinichi Shikata , Kazuhiro Ikeda
IPC分类号： H01L29/16 , H01L21/22
CPC分类号： H01L29/1602 , H01L21/268 , H01L29/47 , H01L29/66143 , H01L29/868 , H01L29/872
摘要： A method for surface treatment of diamond comprising exposing the surface of diamond to UV light containing wavelengths of 172 nm to 184.9 nm and 253.7 nm at an integrated exposure of 10 to 5,000 J/cm2 in an environment of an atmosphere having an oxygen concentration of 20 to 100% and an ozone concentration of 10 to 500,000 ppm to adsorb oxygen on the surface of diamond.
摘要翻译：一种用于金刚石表面处理的方法，其特征在于，在氧浓度为20的气氛中，将金刚石的表面暴露于波长为172nm至184.9nm和253.7nm的紫外光，在10至5,000J / cm 2的整体曝光下至100％，臭氧浓度为10〜500,000ppm，以吸附金刚石表面的氧。

3. 发明申请

US20090050899A1 High-output diamond semiconductor element 审中-公开
标题翻译：高输出金刚石半导体元件
公开(公告)号：US20090050899A1
公开(公告)日：2009-02-26
申请号：US12153752
申请日：2008-05-23
申请人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata , Ramanujam Kumaresan , Natsuo Tatsumi
发明人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata , Ramanujam Kumaresan , Natsuo Tatsumi
IPC分类号： H01L29/15
CPC分类号： H01L29/872 , H01L23/291 , H01L23/3171 , H01L29/1602 , H01L29/402 , H01L2924/0002 , H01L2924/3025 , H01L2924/00
摘要： The present invention relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, and an insulating film layer disposed to surround a circumference of the Schottky electrode. It also relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, a dielectric layer disposed on a part of a junction surface of the Schottky electrode and the diamond p− drift layer, and a field plate containing a conductor, the field plate being disposed on an external surface of the dielectric layer to surround a circumference of the Schottky electrode.
摘要翻译：本发明涉及一种高输出金刚石半导体元件，其包括作为阴极的肖特基电极，金刚石P漂移层，金刚石p +欧姆层，作为阳极的欧姆电极和设置成围绕肖特基电极的周长。它还涉及一种高输出金刚石半导体元件，其包括作为阴极的肖特基电极，金刚石P-漂移层，金刚石p +欧姆层，作为阳极的欧姆电极，设置在结的一部分上的电介质层肖特基电极和金刚石p-漂移层的表面和包含导体的场板，场板设置在电介质层的外表面上以围绕肖特基电极的周围。

4. 发明授权

US08237170B2 Schottky diamond semiconductor device and manufacturing method for a Schottky electrode for diamond semiconductor device 有权
标题翻译：肖特基金刚石半导体器件及用于金刚石半导体器件的肖特基电极的制造方法
公开(公告)号：US08237170B2
公开(公告)日：2012-08-07
申请号：US12597578
申请日：2008-04-14
申请人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
发明人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
IPC分类号： H01L29/15
CPC分类号： H01L29/47 , C22C5/04 , H01L21/0435 , H01L29/1602 , H01L29/6603 , H01L29/872
摘要： To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.
摘要翻译：为了在金刚石半导体中提供肖特基电极，该金刚石半导体具有良好的金刚石粘合性，具有由于外部机械压力不均匀而不会剥离的接触表面，在二极管形成过程中不会导致产率降低并且不会导致电流 - 电压特性的劣化，以及制造肖特基电极的方法。一种肖特基电极，其包括：形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜，其中Pt族合金包含Pt为50〜99.9质量％，0.1〜50质量％包括：散射岛状图案金属薄膜，其形成在形成于基板上的金刚石表面上，并且包括选自Pt和Pd中的一种; 以及包括选自Ru，Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。

5. 发明授权

US08349603B2 Cantilever for measuring intra-cellular and inter-cellular microspaces 有权
标题翻译：悬臂用于测量细胞内和细胞间的间隙
公开(公告)号：US08349603B2
公开(公告)日：2013-01-08
申请号：US12902544
申请日：2010-10-12
申请人： Yukihiro Aoki , Shinichi Shikata , Hiroshi Uetsuka , Chikashi Nakamura , Nobuo Shimamoto
发明人： Yukihiro Aoki , Shinichi Shikata , Hiroshi Uetsuka , Chikashi Nakamura , Nobuo Shimamoto
IPC分类号： C12M1/34
CPC分类号： G01Q60/40
摘要： A cantilever for measuring intra-cellular and inter-cellular microspaces of the present invention includes a support portion, a lever portion provided to the support portion so as to protrude therefrom, and a probe portion provided near a free end of the lever portion. The probe portion includes a conductive probe made of a carbon-based material, and an insulating film to coat a periphery of the conductive probe.
摘要翻译：用于测量本发明的细胞内和细胞内的微细胞的悬臂包括支撑部分，设置在支撑部分上以从其突出的杆部分和设置在杆部分的自由端附近的探针部分。探针部分包括由碳基材料制成的导电探针和用于涂覆导电探针周围的绝缘膜。

6. 发明申请

US20120302045A1 METHOD FOR PRODUCING MOSAIC DIAMOND 审中-公开
标题翻译：生产金刚石钻石的方法
公开(公告)号：US20120302045A1
公开(公告)日：2012-11-29
申请号：US13515991
申请日：2010-12-15
申请人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
发明人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
IPC分类号： H01L21/20
CPC分类号： C30B29/04 , C23C14/0605 , C23C14/48 , C23C14/5873 , C23C16/274 , C30B25/105 , C30B25/186
摘要： The present invention discloses a method for producing a mosaic diamond comprising implanting ions in the vicinity of the surfaces of a plurality of single-crystal diamond substrates arranged in the form of a mosaic, or in the vicinity of the surfaces of mosaic single-crystal diamond substrates whose back surfaces are bonded by a single-crystal diamond layer, so as to form non-diamond layers; growing a single-crystal diamond layer by a vapor-phase synthesis method; and separating the single-crystal diamond layer above the non-diamond layers by etching the non-diamond layers. The method of the present invention prevents the destruction of single-crystal diamond substrates by using a process that is simpler than conventional methods, thus allowing a large quantity of mosaic diamond to be produced in a stable and efficient manner.
摘要翻译：本发明公开了一种马赛克金刚石的制造方法，其特征在于，在离散镶嵌单体结构的多个单晶金刚石基板的表面附近，或马赛克单晶金刚石的表面附近，其背面通过单晶金刚石层结合以形成非金刚石层的基板; 通过气相合成法生长单晶金刚石层; 以及通过蚀刻非金刚石层来分离非金刚石层上方的单晶金刚石层。本发明的方法通过使用比常规方法简单的方法来防止单晶金刚石基板的破坏，因此允许以稳定和有效的方式生产大量的镶嵌金刚石。

7. 发明申请

US20120132928A1 OHMIC ELECTRODE FOR USE IN A SEMICONDUCTOR DIAMOND DEVICE 有权
标题翻译：用于半导体金刚石器件的OHMIC电极
公开(公告)号：US20120132928A1
公开(公告)日：2012-05-31
申请号：US13386067
申请日：2010-07-21
申请人： Takatoshi Yamada , Somu Kumaragurubaran , Shinichi Shikata
发明人： Takatoshi Yamada , Somu Kumaragurubaran , Shinichi Shikata
IPC分类号： H01L29/16 , H01L21/28
CPC分类号： H01L21/043 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor diamond device, there is provided an ohmic electrode that is chemically, and thermally stable, and is excellent in respect of low contact resistance, and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni, and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy, or the nickel-chromium compound, it is improved in characteristics.
摘要翻译：在半导体金刚石器件中，提供化学和热稳定的欧姆电极，并且在低接触电阻和高耐热性方面是优异的。通过溅射法等在半导体金刚石上形成含有Ni的镍 - 铬合金或镍 - 铬化合物，以及化学和热稳定的Ni6Cr2或Ni72Cr18Si10等Cr，从而获得半导体金刚石器件具有优良的欧姆电极。在形成镍 - 铬合金或镍 - 铬化合物之后，如果进行热处理，则其特性得到改善。

8. 发明授权

US5814918A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5814918A
公开(公告)日：1998-09-29
申请号：US689296
申请日：1996-08-07
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shinichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shinichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer a ZnO layer and an SiO.sub.2 layer, which can be operated at the frequency of 2 GHz or higher, with superior durability and less energy loss. The SAW device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: (i) a diamond layer, (ii) a ZnO layer formed on the diamond layer, the ZnO layer having a thickness t.sub.z, (iii) an interdigital transducer (IDT) formed over the ZnO layer, and (iv) a SiO.sub.2 layer formed over the interdigital transducer onto the ZnO layer, the SiO.sub.2 layer having a thickness of t.sub.s ; wherein parameters kh.sub.z =(2.pi./.lambda.)t.sub.z and kh.sub.s =(2.pi./.lambda.)t.sub.s are given within a region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A in a two-dimensional Cartesian coordinate graph having abscissa axis of kh.sub.z and ordinate axis of kh.sub.s, the outer edge of the region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q and R and lines A-B, B-C, C-D, D-E, E-F, F-G, G-H, H-I, I-J, J-K, K-L, L-M, M-N, N-O, O-P, P-Q, Q-R and R-A, as shown in FIG. 1.
摘要翻译：本发明涉及一种SAW器件，其包括金刚石层，ZnO层和SiO 2层，其可以以2GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。根据本发明的波长λ（μm）的第二模式表面声波的SAW器件包括：（i）金刚石层，（ii）在金刚石层上形成的ZnO层，ZnO层具有厚度tz ，（iii）在ZnO层上形成的叉指式换能器（IDT），以及（iv）在叉状换能器上形成在ZnO层上的SiO 2层，SiO 2层的厚度为ts; 其中参数khz =（2π/λ）tz和khs =（2π/λ）ts在具有khz的纵轴和khs的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFGHIJKLMNOPQRA内给出，区域ABCDEFGHIJKLMNOPQRA由笛卡尔坐标中的闭环提供，由点A，B，C，D，E，F，G，H，I，J，K，L，M，N，O，P，Q组成以及R和线AB，BC，CD，DE，EF，FG，GH，HI，IJ，JK，KL，LM，MN，NO，OP，PQ，QR和RA。 1。

9. 发明授权

US5463901A Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack 失效
标题翻译：堆叠中的叠氮化硼层叠压电声表面波器件
公开(公告)号：US5463901A
公开(公告)日：1995-11-07
申请号：US283251
申请日：1994-07-29
申请人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
发明人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , G01L9/00 , H04R31/00
CPC分类号： H03H9/02574 , Y10T29/49005
摘要： A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).
摘要翻译：相对容易加工的氮化硼层位于与压电元件紧密接触的堆叠结构中，以提供能够在较高频率范围内驱动的声表面波器件。这种表面声学装置（10）具有基板（1），形成在基板（1）上的氮化硼膜（2）和形成在氮化硼膜（2）上的一对叉指电极（3a，3b）。叉指电极（3a，3b）被与氮化硼膜（2）紧密接触的压电膜（4）覆盖。

10. 发明授权

US5390401A Method for producing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5390401A
公开(公告)日：1995-02-21
申请号：US103729
申请日：1993-08-06
申请人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H01L41/22
CPC分类号： H03H9/02574 , H03H3/08 , H03H9/1092 , Y10T29/42
摘要： A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).
摘要翻译：表面声波装置的制造使其可靠性增加，并且其表面可安装，而不需要包装。表面声波装置（20）具有与叉指电极（2a，2b）紧密接触的一对相对的叉指电极（2a，2b）和压电元件（4）。位于一对叉指电极（2a，2b）之间的部分传播表面声波。该装置（20）的特征在于，覆盖压电部件（4）的部分以传播表面声波的空气桥（13）和一对叉指电极（2a，2b）。空气桥（13）可以设置有不与压电构件（4）接触的绝缘膜（14）。

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