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1. 发明授权

US07294203B2 Heat shielding member of silicon single crystal pulling system 有权
标题翻译：硅单晶拉制系统的隔热构件
公开(公告)号：US07294203B2
公开(公告)日：2007-11-13
申请号：US10527566
申请日：2003-09-12
申请人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
发明人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
IPC分类号： C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.
摘要翻译：在从存储在石英坩埚中的硅熔体中拉出硅单晶棒的装置中设置有隔热构件，并且配备有将来自围绕硅单晶棒的外周面的加热器的辐射热屏蔽的管部，设置在管部的下部的隆起部，以及设置在隆起部的内侧的环状积蓄部。蓄热部的热导率为5W /（m·℃）以下，其内周面为10mm以上且d / 2以上的高度（H <1），或硅单晶棒的直径称为d，硅单晶棒的外周面与蓄热的内周面之间的最小距离（W 1> 1）较小部分形成为10mm以上且0.2d以下，外周面的上缘和蓄热部的最下部之间的垂直距离（H 2 2 N）为 10mm以上且d以下，石英坩埚的内周面与蓄热部的外周面之间的最小距离（W 2 2 <2）为20mm以上，d / 4以下。

2. 发明申请

US20060124052A1 Heat shielding member of silicon single crystal pulling system 有权
标题翻译：硅单晶拉制系统的隔热构件
公开(公告)号：US20060124052A1
公开(公告)日：2006-06-15
申请号：US10527566
申请日：2003-09-12
申请人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
发明人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
IPC分类号： C30B15/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.
摘要翻译：在从存储在石英坩埚中的硅熔体中拉出硅单晶棒的装置中设置有隔热构件，并且配备有将来自围绕硅单晶棒的外周面的加热器的辐射热屏蔽的管部，设置在管部的下部的隆起部，以及设置在隆起部的内侧的环状积蓄部。蓄热部的热导率为5W /（m·℃）以下，其内周面为10mm以上且d / 2以上的高度（H <1），或硅单晶棒的直径称为d，硅单晶棒的外周面与蓄热的内周面之间的最小距离（W 1> 1）较小部分形成为10mm以上且0.2d以下，外周面的上缘和蓄热部的最下部之间的垂直距离（H 2 2 N）为 10mm以上且d以下，石英坩埚的内周面与蓄热部的外周面之间的最小距离（W 2 2 <2）为20mm以上，d / 4以下。

3. 发明授权

US07208042B2 Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method 有权
标题翻译：通过该方法制造硅单晶和硅单晶的方法
公开(公告)号：US07208042B2
公开(公告)日：2007-04-24
申请号：US10769367
申请日：2004-01-30
申请人： Kazuhiro Harada , Yoji Suzuki , Hidenobu Abe
发明人： Kazuhiro Harada , Yoji Suzuki , Hidenobu Abe
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203 , Y10T117/1068 , Y10T117/1072
摘要： A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz crucible for storing a silicon melt at a predetermined rotation speed and rotating the ingot pulled from the silicon melt in the opposite direction to the rotation of the quartz crucible at a predetermined rotation speed. An average rotation speed CRTAV of the quartz crucible during the pulling of a top ingot portion is set to be faster than an average rotation speed CRTAV of the quartz crucible during the pulling of a bottom ingot portion of the silicon single crystal ingot.
摘要翻译：硅单晶锭以拉伸速率被拉伸，使得锭的内部形成了完美的区域，其中不存在间隙硅型点缺陷和空位型点缺陷聚集体的附聚物，同时旋转石英坩埚用于以预定的转速存储硅熔体，并以与预定旋转速度的石英坩埚的旋转相反的方向旋转从硅熔体拉出的锭。在顶部铸锭部分的牵引期间，石英坩埚的平均转速CR TAV 被设定为比石英坩埚的平均转速CR > TAV

4. 发明申请

US20050263063A1 Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method 有权
标题翻译：通过该方法制造硅单晶和硅单晶的方法
公开(公告)号：US20050263063A1
公开(公告)日：2005-12-01
申请号：US10769367
申请日：2004-01-30
申请人： Kazuhiro Harada , Yoji Suzuki , Hidenobu Abe
发明人： Kazuhiro Harada , Yoji Suzuki , Hidenobu Abe
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/203 , Y10T117/1068 , Y10T117/1072
摘要： A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz crucible for storing a silicon melt at a predetermined rotation speed and rotating the ingot pulled from the silicon melt in the opposite direction to the rotation of the quartz crucible at a predetermined rotation speed. An average rotation speed CRTAV of the quartz crucible during the pulling of a top ingot portion is set to be faster than an average rotation speed CRTAV of the quartz crucible during the pulling of a bottom ingot portion of the silicon single crystal ingot.
摘要翻译：硅单晶锭以拉伸速率被拉伸，使得锭的内部形成了完美的区域，其中不存在间隙硅型点缺陷和空位型点缺陷聚集体的附聚物，同时旋转石英坩埚用于以预定的转速存储硅熔体，并以与预定旋转速度的石英坩埚的旋转相反的方向旋转从硅熔体拉出的锭。在顶部铸锭部分的牵引期间，石英坩埚的平均转速CR TAV 被设定为比石英坩埚的平均转速CR > TAV

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