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1. 发明授权

US07662668B2 Method for separating a semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate 有权
标题翻译：将半导体衬底与半导体衬底上的切割线分离成多个芯片的方法
公开(公告)号：US07662668B2
公开(公告)日：2010-02-16
申请号：US11591496
申请日：2006-11-02
申请人： Kazuhiko Sugiura , Kenichi Yokoyama , Muneo Tamura , Tetsuo Fujii , Makoto Asai
发明人： Kazuhiko Sugiura , Kenichi Yokoyama , Muneo Tamura , Tetsuo Fujii , Makoto Asai
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/16 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/68336 , H01L2924/3025
摘要： A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.
摘要翻译：用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

2. 发明申请

US20070111476A1 Separating device for separating semiconductor substrate and method for separating the same 有权
标题翻译：用于分离半导体衬底的分离装置及其分离方法
公开(公告)号：US20070111476A1
公开(公告)日：2007-05-17
申请号：US11591496
申请日：2006-11-02
申请人： Kazuhiko Sugiura , Kenichi Yokoyama , Muneo Tamura , Tetsuo Fujii , Makoto Asai
发明人： Kazuhiko Sugiura , Kenichi Yokoyama , Muneo Tamura , Tetsuo Fujii , Makoto Asai
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/16 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/68336 , H01L2924/3025
摘要： A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.
摘要翻译：用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

3. 发明授权

US07598118B2 Method of manufacturing semiconductor sensor 失效
标题翻译：制造半导体传感器的方法
公开(公告)号：US07598118B2
公开(公告)日：2009-10-06
申请号：US11585114
申请日：2006-10-24
申请人： Kazuhiko Sugiura , Kenichi Yokoyama , Muneo Tamura
发明人： Kazuhiko Sugiura , Kenichi Yokoyama , Muneo Tamura
IPC分类号： H01L21/00
CPC分类号： B81C1/00269 , B81C2203/0127 , G01P1/023 , G01P15/0802
摘要： A method of manufacturing a semiconductor sensor includes a forming step, a preparing step, a fixing step and a separating step. In the forming step, a plurality of caps made of resin is formed on a supporting substrate through a separable agent. Each of the caps has a cavity therein. In the preparing step, a semiconductor wafer is prepared, on which a plurality of sensor elements are formed. In the fixing step, the caps are fixed to the semiconductor wafer. Each cavity of the caps corresponds to each of the sensor elements. In the separating step, the separable agent and the supporting substrate are separated from the caps so as to leave the caps on the semiconductor wafer.
摘要翻译：制造半导体传感器的方法包括形成步骤，制备步骤，定影步骤和分离步骤。在成形步骤中，通过可分离剂在支撑基材上形成多个由树脂制成的盖。每个盖在其中具有空腔。在准备步骤中，制备半导体晶片，在其上形成多个传感器元件。在固定步骤中，盖固定到半导体晶片。盖的每个腔对应于每个传感器元件。在分离步骤中，可分离剂和支撑基材与盖分离，以便将半导体晶片上的盖留下。

4. 发明申请

US20070117260A1 Method of manufacturing semiconductor sensor 失效
标题翻译：制造半导体传感器的方法
公开(公告)号：US20070117260A1
公开(公告)日：2007-05-24
申请号：US11585114
申请日：2006-10-24
申请人： Kazuhiko Sugiura , Kenichi Yokoyama , Muneo Tamura
发明人： Kazuhiko Sugiura , Kenichi Yokoyama , Muneo Tamura
IPC分类号： H01L21/00 , H01L23/02
CPC分类号： B81C1/00269 , B81C2203/0127 , G01P1/023 , G01P15/0802
摘要： A method of manufacturing a semiconductor sensor includes a forming step, a preparing step, a fixing step and a separating step. In the forming step, a plurality of caps made of resin is formed on a supporting substrate through a separable agent. Each of the caps has a cavity therein. In the preparing step, a semiconductor wafer is prepared, on which a plurality of sensor elements are formed. In the fixing step, the caps are fixed to the semiconductor wafer. Each cavity of the caps corresponds to each of the sensor elements. In the separating step, the separable agent and the supporting substrate are separated from the caps so as to leave the caps on the semiconductor wafer.
摘要翻译：制造半导体传感器的方法包括形成步骤，制备步骤，定影步骤和分离步骤。在成形步骤中，通过可分离剂在支撑基材上形成多个由树脂制成的盖。每个盖在其中具有空腔。在准备步骤中，制备半导体晶片，在其上形成多个传感器元件。在固定步骤中，盖固定到半导体晶片。盖的每个腔对应于每个传感器元件。在分离步骤中，可分离剂和支撑基材与盖分离，以便将半导体晶片上的盖留下。

5. 发明申请

US20090261430A1 Physical quantity sensor and method for manufacturing the same 有权
标题翻译：物理量传感器及其制造方法
公开(公告)号：US20090261430A1
公开(公告)日：2009-10-22
申请号：US12385848
申请日：2009-04-21
申请人： Shigenori Suzuki , Hisanori Yokura , Kenichi Yokoyama , Tetsuo Fujii , Kazuhiko Sugiura
发明人： Shigenori Suzuki , Hisanori Yokura , Kenichi Yokoyama , Tetsuo Fujii , Kazuhiko Sugiura
IPC分类号： H01L29/84 , H01L21/30
CPC分类号： B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81C2203/0118 , G01C19/56 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.
摘要翻译：物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

6. 发明授权

US07821085B2 Physical quantity sensor and method for manufacturing the same 有权
标题翻译：物理量传感器及其制造方法
公开(公告)号：US07821085B2
公开(公告)日：2010-10-26
申请号：US12385848
申请日：2009-04-21
申请人： Shigenori Suzuki , Hisanori Yokura , Kenichi Yokoyama , Tetsuo Fujii , Kazuhiko Sugiura
发明人： Shigenori Suzuki , Hisanori Yokura , Kenichi Yokoyama , Tetsuo Fujii , Kazuhiko Sugiura
IPC分类号： H01L27/14 , H01L29/82 , H01L29/84
CPC分类号： B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81C2203/0118 , G01C19/56 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.
摘要翻译：物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

7. 发明授权

US07337670B2 Physical quantity sensor having multiple through holes 有权
标题翻译：物理量传感器具有多个通孔
公开(公告)号：US07337670B2
公开(公告)日：2008-03-04
申请号：US11649254
申请日：2007-01-04
申请人： Minoru Murata , Kenichi Yokoyama , Makoto Asai
发明人： Minoru Murata , Kenichi Yokoyama , Makoto Asai
IPC分类号： G01P15/00
CPC分类号： G01C19/5719 , G01P15/125
摘要： A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.
摘要翻译：半导体物理量传感器包括：基板; 支撑在基板上的半导体层; 设置在所述半导体层中的沟槽; 以及可移动部分，其设置在所述半导体层中并且通过所述沟槽与所述衬底分离。可动部包括在厚度方向上贯穿半导体层的多个贯通孔。可移动部分能够基于施加到可移动部分的物理量来移位，使得通过可移动部分的位移来检测物理量。可动部分具有设置在通孔中的接合部。交界处有三叉形。

8. 发明申请

US20070120205A1 Physical quantity sensor having multiple through holes 有权
标题翻译：物理量传感器具有多个通孔
公开(公告)号：US20070120205A1
公开(公告)日：2007-05-31
申请号：US11649254
申请日：2007-01-04
申请人： Minoru Murata , Kenichi Yokoyama , Makoto Asai
发明人： Minoru Murata , Kenichi Yokoyama , Makoto Asai
IPC分类号： G01P15/08
CPC分类号： G01C19/5719 , G01P15/125
摘要： A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.
摘要翻译：半导体物理量传感器包括：基板; 支撑在基板上的半导体层; 设置在所述半导体层中的沟槽; 以及可移动部分，其设置在所述半导体层中并且通过所述沟槽与所述衬底分离。可动部包括在厚度方向上贯穿半导体层的多个贯通孔。可移动部分能够基于施加到可移动部分的物理量来移位，使得通过可移动部分的位移来检测物理量。可动部分具有设置在通孔中的接合部。交界处有三叉形。

9. 发明申请

US20050229704A1 Physical quantity sensor having multiple through holes 有权
标题翻译：物理量传感器具有多个通孔
公开(公告)号：US20050229704A1
公开(公告)日：2005-10-20
申请号：US11095469
申请日：2005-04-01
申请人： Minoru Murata , Kenichi Yokoyama , Makoto Asai
发明人： Minoru Murata , Kenichi Yokoyama , Makoto Asai
IPC分类号： B81B3/00 , G01C19/56 , G01P15/125
CPC分类号： G01C19/5719 , G01P15/125
摘要： A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.
摘要翻译：半导体物理量传感器包括：基板; 支撑在基板上的半导体层; 设置在所述半导体层中的沟槽; 以及可移动部分，其设置在所述半导体层中并且通过所述沟槽与所述衬底分离。可动部包括在厚度方向上贯穿半导体层的多个贯通孔。可移动部分能够基于施加到可移动部分的物理量来移位，使得通过可移动部分的位移来检测物理量。可动部分具有设置在通孔中的接合部。交界处有三叉形。

10. 发明授权

US07178400B2 Physical quantity sensor having multiple through holes 有权
公开(公告)号：US07178400B2
公开(公告)日：2007-02-20
申请号：US11095469
申请日：2005-04-01
申请人： Minoru Murata , Kenichi Yokoyama , Makoto Asai
发明人： Minoru Murata , Kenichi Yokoyama , Makoto Asai
IPC分类号： G01P15/00 , G01P15/125
CPC分类号： G01C19/5719 , G01P15/125
摘要： A semiconductor physical quantity sensor includes: a substrate; a semiconductor layer supported on the substrate; a trench disposed in the semiconductor layer; and a movable portion disposed in the semiconductor layer and separated from the substrate by the trench. The movable portion includes a plurality of through-holes, each of which penetrates the semiconductor layer in a thickness direction. The movable portion is capable of displacing on the basis of a physical quantity applied to the movable portion so that the physical quantity is detected by a displacement of the movable portion. The movable portion has a junction disposed among the through-holes. The junction has a trifurcate shape.

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