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1. 发明授权

US07545010B2 Catalytic sensor structure 失效
标题翻译：催化传感器结构
公开(公告)号：US07545010B2
公开(公告)日：2009-06-09
申请号：US10912082
申请日：2004-08-06
申请人： Shigeru Ichihara , Kaoru Konakahara , Tohru Den , Kazuhiko Fukutani
发明人： Shigeru Ichihara , Kaoru Konakahara , Tohru Den , Kazuhiko Fukutani
IPC分类号： H01L29/43
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/72 , Y10S977/764 , Y10S977/778 , Y10S977/78 , Y10S977/782 , Y10S977/957
摘要： The invention provides a nanostructure including nanowires having very small diameters and integrated at a high density, and capable of being applied to still further high-functional devices.The invention provides a structure including a substrate or substrate having an underlayer, and a structure formed on the substrate or substrate having an underlayer, wherein the structure includes a columnar first part (part) and a second part (part) formed to surround the first part, and the second part comprises two or more types of materials capable of forming eutectic crystals, one type of the materials is a semiconductor material, and the height of the first part from the substrate is greater than the height of the second part from the substrate.
摘要翻译：本发明提供纳米结构，其纳米线具有非常小的直径并且以高密度集成，并且能够应用于更多的高功能器件。本发明提供一种结构，其包括具有底层的衬底或衬底，以及形成在具有底层的衬底或衬底上的结构，其中该结构包括柱状第一部分（部分）和第二部分（部分），该第二部分第二部分包括能够形成共晶晶体的两种或更多种类型的材料，一种类型的材料是半导体材料，并且第一部分与基板的高度大于第二部分的高度基质。

2. 发明授权

US07214418B2 Structure having holes and method for producing the same 失效
标题翻译：具有孔的结构及其制造方法
公开(公告)号：US07214418B2
公开(公告)日：2007-05-08
申请号：US11235131
申请日：2005-09-27
申请人： Tohru Den , Kazuhiko Fukutani , Nobuhiro Yasui
发明人： Tohru Den , Kazuhiko Fukutani , Nobuhiro Yasui
IPC分类号： B32B3/24
CPC分类号： C23C14/5873 , C22C30/00 , C23C14/185 , C25D11/045 , C25D11/18 , C25D11/20 , Y10S977/781 , Y10S977/811 , Y10S977/814 , Y10T428/218 , Y10T428/24273 , Y10T428/24322 , Y10T428/24331 , Y10T428/28
摘要： A structure having a hole, including a substrate, a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole.
摘要翻译：具有孔的结构，包括基板，包括氧化铝孔的第一层和设置在基板和第一层之间的第二层，其中第二层包含硅，并且具有比氧化铝孔小的孔。

3. 发明申请

US20060192309A1 Method of manufacturing porous body 有权
标题翻译：制造多孔体的方法
公开(公告)号：US20060192309A1
公开(公告)日：2006-08-31
申请号：US11409021
申请日：2006-04-24
申请人： Kazuhiko Fukutani , Tohru Den
发明人： Kazuhiko Fukutani , Tohru Den
IPC分类号： G02B1/00 , B29D11/00
CPC分类号： B01D39/2068 , B01D67/0058 , B01D69/02 , B01D71/024 , B01D71/027 , C04B35/01 , C04B35/14 , C04B35/16 , C04B38/0025 , C04B2235/3287 , C04B2235/3418 , C04B2235/65 , C23C8/02 , C23C8/10 , C25D11/02 , C25D11/045 , G02B5/207 , G11B5/855 , H01L21/0337 , Y10S977/902 , Y10T428/12528 , Y10T428/12625 , Y10T428/12674 , Y10T428/24322 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249975 , Y10T428/249978 , Y10T428/249979 , Y10T428/249987 , C04B35/10 , C04B38/04
摘要： A nanostructure is a porous body comprising a plurality of pillar-shaped pores and a region surrounding them, the region being an oxide amorphous region formed so as to contain C, Si, Ge or a material of a combination of them. Such a nanostructure can be used as a functional material in light emitting devices, optical devices and microdevices. It can also be used as a filter.
摘要翻译：纳米结构是包括多个柱状孔和围绕它们的区域的多孔体，所述区域是形成为含有C，Si，Ge或它们的组合材料的氧化物非晶区域。这种纳米结构可以用作发光器件，光学器件和微器件中的功能材料。它也可以用作过滤器。

4. 发明申请

US20060120918A1 Field-effect transistor, sensor using it, and production method thereof 失效
标题翻译：场效应晶体管，使用它的传感器及其制造方法
公开(公告)号：US20060120918A1
公开(公告)日：2006-06-08
申请号：US10530549
申请日：2004-08-04
申请人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
发明人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
IPC分类号： G01N33/00
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译：通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜氧化物，其具有垂直于衬底的孔。

5. 发明申请

US20060022342A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060022342A1
公开(公告)日：2006-02-02
申请号：US10986939
申请日：2004-11-15
申请人： Kazuhiko Fukutani , Tohru Den , Hirokatsu Miyata
发明人： Kazuhiko Fukutani , Tohru Den , Hirokatsu Miyata
IPC分类号： H01L23/52
CPC分类号： H01L21/76879 , G11B5/7325 , G11B5/743 , G11B5/855 , H01L21/7682 , H01L21/76838 , H01L21/76877 , H01L21/76888 , H01L23/52 , H01L23/5222 , H01L23/53295 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has multi-layered interlayer insulating layers 3 formed on a semiconductor substrate 1, and wirings 4 formed in the interlayer insulating layers 3. The interlayer insulating layers 3 are composed of porous bodies having fine columnar pores and parent-material regions consisting mainly of silicon oxides surrounding the fine pores. The wirings 4 are composed of structures wherein columnar substances containing aluminum are dispersed in a base material containing silicon, or regions wherein an electrically conductive material is introduced in a portion of the porous bodies. The average diameter of the fine pores in the porous bodies is 1 nm or larger and 10 nm or smaller, and the average distance between the fine pores is 3 nm or larger and 15 nm or smaller. The fine pores in the porous bodies is formed perpendicularly, or substantially perpendicularly to the film surface on a semiconductor substrate 1.
摘要翻译：半导体器件具有形成在半导体衬底1上的多层层间绝缘层3和形成在层间绝缘层3中的布线4。层间绝缘层3由具有细柱状孔的多孔体和主要由围绕细孔的氧化硅组成的母材区构成。配线4由含有铝的柱状物质分散在含有硅的基材中的结构或其中在多孔体的一部分中导入导电材料的区域构成。多孔体的细孔的平均直径为1nm以上且10nm以下，微细孔的平均距离为3nm以上且15nm以下。多孔体中的细孔形成为垂直于或基本垂直于半导体基板1上的膜表面。

6. 发明授权

US07892979B2 Columnar structured material and method of manufacturing the same 有权
标题翻译：柱状结构材料及其制造方法
公开(公告)号：US07892979B2
公开(公告)日：2011-02-22
申请号：US12119739
申请日：2008-05-13
申请人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
发明人： Miki Ogawa , Hirokatsu Miyata , Albrecht Otto , Akira Kuriyama , Hiroshi Okura , Tohru Den , Kazuhiko Fukutani
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C23C14/5873 , B82Y10/00 , B82Y30/00 , C23C14/165 , H01L21/0331 , H01L21/0337 , H01L21/3086 , H01L21/32051 , H01L29/0657
摘要： A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. In addition, a material is introduced into the columnar hole portions of the porous material to form a dot pattern, and the porous material is removed.
摘要翻译：制造点阵图形的方法包括以下步骤：制备由包含第一组分的多个柱状构件构成的结构材料和包含不同于围绕柱状构件的第一组分的第二组分的区域，其结构材料由将第一组分和第二组分沉积在基底上，并从结构化材料中除去柱状构件以形成具有柱状孔的多孔材料。此外，将材料引入到多孔材料的柱状孔部分中以形成点图案，并且去除多孔材料。

7. 发明授权

US07631769B2 Fluid control device and method of manufacturing the same 失效
标题翻译：流体控制装置及其制造方法
公开(公告)号：US07631769B2
公开(公告)日：2009-12-15
申请号：US11676884
申请日：2007-02-20
申请人： Tohru Den , Kazuhiko Fukutani
发明人： Tohru Den , Kazuhiko Fukutani
IPC分类号： B01D71/02 , B01D41/04 , C25D11/02 , B01D63/08
CPC分类号： B01D67/0065 , B01D71/025 , B01D71/027 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249979
摘要： A fluid control device has very fine pores with an average diameter not greater than 10 nm and provides a large flux. The fluid control device comprises an anodized alumina film having fine pores and a silicon based micro-porous film having very fine pores and made from an AlSi mixed film and the fine pores and the very fine pores are at least partly linked with each other. The fluid control device is prepared from a film including at least an aluminum layer and an AlSi mixed film by forming an anodized alumina film having fine pores by way of an anodization process for the aluminum layer part and also forming a silicon based micro-porous film having very fine pores containing silicon as principal ingredient by way of an anodization process or etching process for the AlSi mixed film. The fluid control device can be used as filter or ultrafilter film that allows fluid and gas to pass through it.
摘要翻译：流体控制装置具有非常细的孔，平均直径不大于10nm，并提供大的通量。流体控制装置包括具有细孔的阳极氧化氧化铝膜和具有非常细小孔并由AlSi混合膜制成的硅基微孔膜，并且细孔和极细孔至少部分地彼此连接。流体控制装置由至少包含铝层和AlSi混合膜的膜通过用于铝层部分的阳极氧化处理形成具有细孔的阳极化氧化铝膜并且还形成硅基微孔膜通过阳极氧化处理或AlSi混合膜的蚀刻工艺，具有含有硅作为主要成分的非常细的孔。流体控制装置可用作允许流体和气体通过的过滤器或超滤膜。

8. 发明授权

US07393458B2 Porous material and production process thereof 失效
标题翻译：多孔材料及其生产工艺
公开(公告)号：US07393458B2
公开(公告)日：2008-07-01
申请号：US11264163
申请日：2005-11-02
申请人： Kazuhiko Fukutani , Tohru Den
发明人： Kazuhiko Fukutani , Tohru Den
IPC分类号： B31D3/00 , B44C1/22
CPC分类号： C23C14/5873 , C23C14/06 , C23C14/185 , G11B5/855 , Y10S977/773 , Y10T428/12479 , Y10T428/12528 , Y10T428/12625 , Y10T428/12674 , Y10T428/249953 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249975 , Y10T428/249978 , Y10T428/249979 , Y10T428/249987
摘要： There are provided a porous material and a process for producing the same. The porous material has a plurality of columnar pores and an area surrounding the pores, and the area is an amorphous area containing C, Si, Ge or a combination thereof.
摘要翻译：提供多孔材料及其制造方法。多孔材料具有多个柱状孔和围绕孔的区域，该区域是含有C，Si，Ge或它们的组合的无定形区域。

9. 发明申请

US20070141321A1 FLUID CONTROL DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：流体控制装置及其制造方法
公开(公告)号：US20070141321A1
公开(公告)日：2007-06-21
申请号：US11676884
申请日：2007-02-20
申请人： TOHRU DEN , Kazuhiko Fukutani
发明人： TOHRU DEN , Kazuhiko Fukutani
IPC分类号： B32B3/00
CPC分类号： B01D67/0065 , B01D71/025 , B01D71/027 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249979
摘要： A fluid control device has very fine pores with an average diameter not greater than 10 nm and provides a large flux. The fluid control device comprises an anodized alumina film having fine pores and a silicon based micro-porous film having very fine pores and made from an AlSi mixed film and the fine pores and the very fine pores are at least partly linked with each other. The fluid control device is prepared from a film including at least an aluminum layer and an AlSi mixed film by forming an anodized alumina film having fine pores by way of an anodization process for the aluminum layer part and also forming a silicon based micro-porous film having very fine pores containing silicon as principal ingredient by way of an anodization process or etching process for the AlSi mixed film. The fluid control device can be used as filter or ultrafilter film that allows fluid and gas to pass through it.
摘要翻译：流体控制装置具有非常细的孔，平均直径不大于10nm，并提供大的通量。流体控制装置包括具有细孔的阳极氧化氧化铝膜和具有非常细小孔并由AlSi混合膜制成的硅基微孔膜，并且细孔和极细孔至少部分地彼此连接。流体控制装置由至少包含铝层和AlSi混合膜的膜通过用于铝层部分的阳极氧化处理形成具有细孔的阳极化氧化铝膜并且还形成硅基微孔膜通过阳极氧化处理或AlSi混合膜的蚀刻工艺，具有含有硅作为主要成分的非常细的孔。流体控制装置可用作允许流体和气体通过的过滤器或超滤膜。

10. 发明授权

US07517554B2 Process for producing nanostructure of mixed film of Al, Si, and/or Ge 失效
标题翻译：制备Al，Si和/或Ge混合膜的纳米结构的方法
公开(公告)号：US07517554B2
公开(公告)日：2009-04-14
申请号：US11339627
申请日：2006-01-26
申请人： Tatsuya Saito , Tohru Den , Kazuhiko Fukutani , Aya Imada
发明人： Tatsuya Saito , Tohru Den , Kazuhiko Fukutani , Aya Imada
IPC分类号： C23C8/00
CPC分类号： C23C14/5873 , B82Y30/00 , C23C14/165
摘要： A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SixGe1-x (0≦X≦1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.
摘要翻译：提供一种制造纳米结构的方法，其能够通过成膜条件控制孔径和孔间隔。该方法产生相对于铝含有20〜70原子％含有硅和锗的铝 - 硅 - 锗混合膜的纳米结构，该混合膜由组成为主要由硅和锗组成的基体构成 SixGe1-x（0 <= X <= 1）的比例，以及主要由直径不大于30nm的铝构成的圆筒部。在该过程中，以不高于150nm / min的成膜速度形成混合膜。

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