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1. 发明授权

US06555403B1 Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same 失效
标题翻译：半导体激光器，半导体发光器件及其制造方法
公开(公告)号：US06555403B1
公开(公告)日：2003-04-29
申请号：US09124895
申请日：1998-07-30
申请人： Kay Domen , Shinichi Kubota , Akito Kuramata , Reiko Soejima
发明人： Kay Domen , Shinichi Kubota , Akito Kuramata , Reiko Soejima
IPC分类号： H01L2100
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031
摘要： There are provided a semiconductor laser, a semiconductor light emitting device, and methods of manufacturing the same wherein a threshold current density in a short wavelength semiconductor laser using a nitride compound semiconductor can be reduced. An active layer is composed of a single gain layer having a thickness of more than 3 nm, and optical guiding layers are provided between the active layer and cladding layers respectively.
摘要翻译：提供半导体激光器，半导体发光器件及其制造方法，其中可以减少使用氮化物化合物半导体的短波长半导体激光器中的阈值电流密度。有源层由厚度大于3nm的单个增益层组成，并且在有源层和包层之间分别设置光导层。

2. 发明授权

US06984840B2 Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element 有权
标题翻译：具有含有N作为V族元素的III-V族化合物半导体材料外延层的光学半导体器件
公开(公告)号：US06984840B2
公开(公告)日：2006-01-10
申请号：US09313764
申请日：1999-05-18
申请人： Akito Kuramata , Shinichi Kubota , Kazuhiko Horino , Reiko Soejima
发明人： Akito Kuramata , Shinichi Kubota , Kazuhiko Horino , Reiko Soejima
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L33/007 , H01S5/0421 , H01S5/2205 , H01S5/2231 , H01S5/34333
摘要： An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition represented as AlxGa1-xN, wherein the AlGaN buffer layer has a carrier density in the range between 3×1018–1×1020 cm−3, and the compositional parameter x is larger than 0 but smaller than 0.4 (0
摘要翻译：光学半导体器件包括具有n型导电性的SiC衬底和在SiC衬底上形成的具有n型导电性的AlGaN缓冲层，其组成表示为Al x Ga 1 -X N，其中所述AlGaN缓冲层的载流子浓度在3×10 18 -1×10 -3 cm -3 -3之间的范围内，，组成参数x大于0但小于0.4（0

3. 发明授权

US06661822B1 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06661822B1
公开(公告)日：2003-12-09
申请号：US09544654
申请日：2000-04-05
申请人： Shinichi Kubota , Kazuhiko Horino , Akito Kuramata
发明人： Shinichi Kubota , Kazuhiko Horino , Akito Kuramata
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/021 , H01S5/0213 , H01S5/0655 , H01S5/221 , H01S5/2218 , H01S5/223 , H01S5/32341 , H01S5/34333
摘要： A lateral mode controlling layer made of AlN having a thickness of more than 0 nm but less than 300 nm is formed in at least one cladding layer of an n-type cladding layer and a p-type cladding layer or formed between the at least one cladding layer and the active layer. Also, a mask layer is formed on a substrate, then an AlN layer is formed to cover it, and then the AlN layer is lifted off by using a solution for etching. the mask layer. Accordingly, lateral mode control of the group III-V compound semiconductor laser can be facilitated, the aspect ratio of the beam shape can be improved, and the damage caused by the Al layer growth and the patterning can be reduced.
摘要翻译：在n型包层和p型包覆层的至少一个包覆层中形成厚度大于0nm但小于300nm的由AlN制成的横向模式控制层，或者形成在至少一个包层和有源层。此外，在基板上形成掩模层，然后形成AlN层以覆盖其，然后通过使用蚀刻溶液剥离AlN层。掩模层。因此，可以促进III-V族化合物半导体激光器的横向模式控制，可以提高光束形状的纵横比，并且可以降低由Al层生长和图案化引起的损伤。

4. 发明授权

US09153648B2 Semiconductor stacked body, method for manufacturing same, and semiconductor element 有权
标题翻译：半导体堆叠体及其制造方法以及半导体元件
公开(公告)号：US09153648B2
公开(公告)日：2015-10-06
申请号：US14110417
申请日：2012-04-03
申请人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
发明人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
IPC分类号： H01L29/20 , H01L29/267 , H01L29/737 , H01L29/778 , H01L29/78 , H01L29/812 , H01L29/872 , C23C16/02 , C23C16/30 , H01L21/02 , C30B25/18 , C30B29/40 , H01L33/00 , H01L33/12 , H01L33/32
CPC分类号： H01L29/2003 , C23C16/0218 , C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/267 , H01L29/7371 , H01L29/7788 , H01L29/7789 , H01L29/7827 , H01L29/8122 , H01L29/8128 , H01L29/872 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.
摘要翻译：一种半导体层叠体的制造方法以及具备该半导体层叠体的半导体元件，具备：半导体层叠体，具有以二氧化硅基板为主面的半导体层叠体，所述Ga 2 O 3基板以六方晶格排列有氧原子的面为主面，形成在Ga 2 O 3衬底上的缓冲层，以及形成在AlN缓冲层上的氮化物半导体层。

5. 发明申请

US20080131987A1 METHOD FOR FABRICATING LIGHT-EMITTING DEVICE 审中-公开
标题翻译：制造发光装置的方法
公开(公告)号：US20080131987A1
公开(公告)日：2008-06-05
申请号：US11948394
申请日：2007-11-30
申请人： Kazuhiko Horino , Akito Kuramata , Hiroshi Yamamoto , Toshimitsu Kaneko
发明人： Kazuhiko Horino , Akito Kuramata , Hiroshi Yamamoto , Toshimitsu Kaneko
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/007 , H01L33/20
摘要： A method for fabricating a light-emitting device includes: forming a first semiconductor layer on a substrate; foaming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer, the second semiconductor layer having a conduction type opposite to that of the first semiconductor layer; and forming a recess so as to be penetrated through up to the first semiconductor layer from the second semiconductor layer by a first etching; and forming an inversely tapered shape to an inner wall of the recess by a second etching using an etching solution.
摘要翻译：一种制造发光器件的方法包括：在衬底上形成第一半导体层; 在第一半导体层上起泡有源层; 在所述有源层上形成第二半导体层，所述第二半导体层具有与所述第一半导体层相反的导电类型; 以及形成凹槽，以便通过第一蚀刻从所述第二半导体层穿过所述第一半导体层; 并且通过使用蚀刻溶液的第二蚀刻，在凹部的内壁上形成反锥形的形状。

6. 发明授权

US06990261B2 Optical circuit device and method for fabricating the same 失效
标题翻译：光电路装置及其制造方法
公开(公告)号：US06990261B2
公开(公告)日：2006-01-24
申请号：US10295885
申请日：2002-11-18
申请人： Akito Kuramata
发明人： Akito Kuramata
IPC分类号： G02B6/12
CPC分类号： H01F10/193 , G02F1/0955 , G02F2202/10 , H01F10/28
摘要： An optical circuit device including a substrate of a III–V group compound semiconductor, and a magnetic semiconductor layer having a chalcopyrite type crystal structure. The magnetic semiconductor having the chalcopyrite type crystal structure is a material which can provide Faraday effect, and the use of such material makes it possible to form the Faraday rotation element. Furthermore, the magnetic semiconductor having the chalcopyrite type crystal structure which can lattice-match with the substrates have little crystal defects, which can make a light loss of the Faraday rotation element small. The magnetic semiconductor of the chalcopyrite type crystal structure can provide large Verdet's constant, which makes it possible to reduce a length of the Faraday rotation element and resultantly makes it possible to micronize the optical circuit device.
摘要翻译：一种包括III-V族化合物半导体的衬底和具有黄铜矿型晶体结构的磁性半导体层的光电路器件。具有黄铜矿型晶体结构的磁性半导体是可以提供法拉第效应的材料，并且使用这种材料可以形成法拉第旋转元件。此外，具有与基板晶格匹配的黄铜矿型晶体结构的磁性半导体具有很小的晶体缺陷，这可能使法拉第旋转元件的光损失较小。黄铜矿型晶体结构的磁性半导体可以提供较大的Verdet常数，这使得可以减小法拉第旋转元件的长度，从而可以使光电路器件微调化。

7. 发明授权

US5408487A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5408487A
公开(公告)日：1995-04-18
申请号：US214212
申请日：1994-03-17
申请人： Toru Uchida , Chikashi Anayama , Susumu Yamazaki , Hirohide Kurakake , Akito Kuramata , Haruhisa Soda
发明人： Toru Uchida , Chikashi Anayama , Susumu Yamazaki , Hirohide Kurakake , Akito Kuramata , Haruhisa Soda
IPC分类号： H01S5/00 , H01S5/02 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2201 , H01S5/323 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/2004 , H01S5/2009 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3403 , H01S5/3406 , H01S5/3415 , H01S5/342 , H01S5/34306
摘要： A group III-V compound semiconductor laser of a 1 .mu.m band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 .mu.m band or a 1.55 .mu.m, and has a laser structure including an active layer For emitting light, guide layers sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5% or more and smaller than a2 by 0.5% or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.
摘要翻译：具有优异的转换效率和高特征温度的1μm带的III-V族化合物半导体激光器。半导体激光器可以发射1.3μm或1.55μm的光，并且具有包括有源层的激光结构为了发射光，夹持有源层并且具有比有源层大的带隙的引导层和包层包围引导层并具有比引导层大的带隙的层。引导层和包层的晶格常数比a1大0.5％以上且小于等于0.5％以上，其中a1表示GaAs的晶格常数，a2是InP的晶格常数。

8. 发明申请

US20140048823A1 SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT 有权
标题翻译：半导体堆叠体，制造方法及半导体元件
公开(公告)号：US20140048823A1
公开(公告)日：2014-02-20
申请号：US14110417
申请日：2012-04-03
申请人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
发明人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C23C16/0218 , C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/267 , H01L29/7371 , H01L29/7788 , H01L29/7789 , H01L29/7827 , H01L29/8122 , H01L29/8128 , H01L29/872 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AIN buffer layer formed on the Ga203 substrate, and a nitride semiconductor layer formed on the AIN buffer layer.
摘要翻译：一种半导体层叠体的制造方法以及具备该半导体层叠体的半导体元件，具备：半导体层叠体，具有Ga 2 O 3基板，具有作为主面的以六方晶格排列有氧原子的平面，AlN 形成在Ga 2 O 3衬底上的缓冲层，以及形成在AIN缓冲层上的氮化物半导体层。

9. 发明授权

US06943422B2 Semiconductor photodetecting device and method for fabricating the same 有权
标题翻译：半导体光电检测装置及其制造方法
公开(公告)号：US06943422B2
公开(公告)日：2005-09-13
申请号：US10624553
申请日：2003-07-23
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
IPC分类号： G02B6/122 , G02B6/13 , G02B6/132 , G02B6/42 , H01L21/00 , H01L31/0232 , H01L31/075 , H01L31/10
CPC分类号： G02B6/132 , G02B6/1228 , G02B6/4204 , H01L31/02327
摘要： A semiconductor photodetecting device including a PIN photodiode formed on an SI-InP substrate; a buried optical waveguide portion formed on the SI-InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI-InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.
摘要翻译：一种半导体光电检测器件，包括形成在SI-InP衬底上的PIN光电二极管; 形成在SI-InP衬底上的掩埋光波导部分，其包括朝向PIN光电二极管连续增加的膜厚度和覆盖InGaAsP芯层的上表面和侧表面的InP覆盖层; 以及形成在PIN光电二极管和掩埋光波导部分之间的SI-InP衬底上并包括InGaAsP芯层和InP覆盖层的脊形连接光波导部分，其仅选择性地仅覆盖InGaAsP芯层的上表面。

10. 发明授权

US06606335B1 Semiconductor laser, semiconductor device, and their manufacture methods 有权
标题翻译：半导体激光器，半导体器件及其制造方法
公开(公告)号：US06606335B1
公开(公告)日：2003-08-12
申请号：US09743636
申请日：2001-01-12
申请人： Akito Kuramata , Kazuhiko Horino
发明人： Akito Kuramata , Kazuhiko Horino
IPC分类号： H01S500
CPC分类号： H01S5/32 , H01S5/021 , H01S5/3201 , H01S5/3226 , H01S5/32341 , H01S2304/12
摘要： A substrate is made of SiC. A plurality of AlxGa1−xN patterns (0≦x≦1) is formed on a surface of the substrate and dispersively distributed in an in-plane of the substrate. An AlyGa1−yN buffer layer (0≦y≦1) covers the surface of the substrate and the AlxGa1−xN patterns. A laser structure is formed on the AlyGa1−yN buffer layer. Since the AlGaN buffer layer is grown by using the AlGaN patterns as seed crystals, a dislocation density of a predetermined region in the AlGaN buffer layer can be lowered. The characteristics of a laser structure can be improved by forming the laser structure above the region having a low dislocation density. Since the AlGaN pattern has electric conductivity, the device resistance can be suppressed from being increased.
摘要翻译：衬底由SiC制成。在基板的表面上形成多个Al x Ga 1-x N图案（0 <= x <= 1），并且分散地分布在基板的平面内。 AlyGa1-yN缓冲层（0 <= y <= 1）覆盖衬底的表面和Al x Ga 1-x N图案。在AlyGa1-yN缓冲层上形成激光结构。由于通过使用AlGaN图案作为晶种生长AlGaN缓冲层，所以可以降低AlGaN缓冲层中的预定区域的位错密度。可以通过在低位错密度的区域上形成激光结构来改善激光器结构的特性。由于AlGaN图案具有导电性，所以可以抑制器件电阻的增加。

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