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1. 发明申请

US20080121972A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080121972A1
公开(公告)日：2008-05-29
申请号：US11769304
申请日：2007-06-27
申请人： Junichi Shiozawa , Takeo Furuhata , Akiko Sekihara
发明人： Junichi Shiozawa , Takeo Furuhata , Akiko Sekihara
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/513
摘要： A semiconductor device including a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate; a first gate electrode layer formed on the first gate insulating film; an element isolation insulating film formed so as to isolate a plurality of the first gate electrode layers; a second gate insulating film layer formed so as to cover upper surfaces of the plurality of first gate electrode layers and the element isolation insulating films; and a second gate electrode layer formed on the second gate insulating film layer; and the second gate insulating film layer includes a NONON stacked film structure and a nitride film layer contacting the first gate electrode layer and constituting a lowermost layer of the NONON stack film structure is separated at a portion interposing the plurality of neighboring first gate electrode layers.
摘要翻译：一种半导体器件，包括半导体衬底; 形成在所述半导体基板上的第一栅极绝缘膜; 形成在所述第一栅极绝缘膜上的第一栅极电极层; 形成为隔离多个第一栅极电极层的元件隔离绝缘膜; 形成为覆盖多个第一栅电极层和元件隔离绝缘膜的上表面的第二栅极绝缘膜层; 以及形成在所述第二栅极绝缘膜层上的第二栅极电极层; 并且第二栅极绝缘膜层包括NONON层叠膜结构和与第一栅极电极层接触并构成NONON叠层膜结构的最下层的氮化物膜层在插入多个相邻的第一栅极电极层的部分处被分离。

2. 发明授权

US07679127B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07679127B2
公开(公告)日：2010-03-16
申请号：US11769304
申请日：2007-06-27
申请人： Junichi Shiozawa , Takeo Furuhata , Akiko Sekihara
发明人： Junichi Shiozawa , Takeo Furuhata , Akiko Sekihara
IPC分类号： H01L29/423 , H01L21/28
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/513
摘要： A semiconductor device including a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate; a first gate electrode layer formed on the first gate insulating film; an element isolation insulating film formed so as to isolate a plurality of the first gate electrode layers; a second gate insulating film layer formed so as to cover upper surfaces of the plurality of first gate electrode layers and the element isolation insulating films; and a second gate electrode layer formed on the second gate insulating film layer; and the second gate insulating film layer includes a NONON stacked film structure and a nitride film layer contacting the first gate electrode layer and constituting a lowermost layer of the NONON stack film structure is separated at a portion interposing the plurality of neighboring first gate electrode layers.
摘要翻译：一种半导体器件，包括半导体衬底; 形成在所述半导体基板上的第一栅极绝缘膜; 形成在所述第一栅极绝缘膜上的第一栅极电极层; 形成为隔离多个第一栅极电极层的元件隔离绝缘膜; 形成为覆盖多个第一栅电极层和元件隔离绝缘膜的上表面的第二栅极绝缘膜层; 以及形成在所述第二栅极绝缘膜层上的第二栅极电极层; 并且第二栅极绝缘膜层包括NONON层叠膜结构和与第一栅极电极层接触并构成NONON叠层膜结构的最下层的氮化物膜层在插入多个相邻的第一栅极电极层的部分处被分离。

3. 发明授权

US08404537B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08404537B2
公开(公告)日：2013-03-26
申请号：US13487280
申请日：2012-06-04
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/337 , H01L21/8236
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

4. 发明申请

US20120122294A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120122294A1
公开(公告)日：2012-05-17
申请号：US13326499
申请日：2011-12-15
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/762 , H01L21/28
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes successively forming first and second films to be processed on a semiconductor substrate. The method further includes removing a predetermined region of the second film by etching, to form a slit part including sidewall parts and a bottom part, the sidewall parts including side surfaces of the second film, and the bottom part including an upper surface of the first film. The method further includes supplying oxidizing ions or nitriding ions contained in plasma, generated by a microwave, a radio-frequency wave, or electron cyclotron resonance, to the sidewall parts and the bottom part of the slit part by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the slit part.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上依次形成待处理的第一和第二膜。该方法还包括通过蚀刻去除第二膜的预定区域，以形成包括侧壁部分和底部的狭缝部分，所述侧壁部分包括第二膜的侧表面，并且底部包括第一膜的上表面电影。该方法还包括通过向半导体施加预定电压将由微波，射频波或电子回旋共振产生的等离子体中包含的氧化离子或氮化离子供应到狭缝部分的侧壁部分和底部。从而进行侧壁部和狭缝部的底部的各向异性氧化或各向异性氮化。

5. 发明申请

US20070281428A1 SEMICONDUCTOR DEVICE HAVING AN OXIDE FILM FORMED ON A SEMICONDUCTOR SUBSTRATE SIDEWALL OF AN ELEMENT REGION AND ON A SIDEWALL OF A GATE ELECTRODE 有权
标题翻译：在半导体基板上形成氧化物膜的半导体器件在元件区域和栅极电极的侧壁上形成
公开(公告)号：US20070281428A1
公开(公告)日：2007-12-06
申请号：US11835353
申请日：2007-08-07
申请人： Toshitake Yaegashi , Junichi Shiozawa
发明人： Toshitake Yaegashi , Junichi Shiozawa
IPC分类号： H01L21/336
CPC分类号： H01L29/78 , H01L27/105 , H01L27/11526 , H01L27/11529
摘要： A first isolation is formed on a semiconductor substrate, and a first element region is isolated via the first isolation. A first gate insulating film is formed on the first element region, and a first gate electrode is formed on the first gate insulating film. A second isolation is formed on the semiconductor substrate, and a second element region is isolated via the second isolation. A second gate insulating film is formed on the second element region, and a second gate electrode is formed on the second gate insulating film. A first oxide film is formed between the first isolation and the first element region. A second oxide film is formed between the second isolation and the second element region. The first isolation has a width narrower than the second isolation, and the first oxide film has a thickness thinner than the second oxide film.
摘要翻译：第一隔离形成在半导体衬底上，第一元件区通过第一隔离隔离。第一栅绝缘膜形成在第一元件区上，第一栅电极形成在第一栅极绝缘膜上。第二隔离形成在半导体衬底上，第二元件区通过第二隔离隔离。第二栅极绝缘膜形成在第二元件区域上，第二栅电极形成在第二栅极绝缘膜上。在第一隔离和第一元件区之间形成第一氧化膜。在第二隔离和第二元件区之间形成第二氧化膜。第一隔离物的宽度比第二隔离宽，第一氧化膜的厚度比第二氧化膜薄。

6. 发明申请

US20110065262A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110065262A1
公开(公告)日：2011-03-17
申请号：US12926357
申请日：2010-11-12
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/326
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
摘要翻译：根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。

7. 发明授权

US07858467B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07858467B2
公开(公告)日：2010-12-28
申请号：US12412962
申请日：2009-03-27
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/337 , H01L21/8238
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
摘要翻译：根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。

8. 发明申请

US20060243978A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060243978A1
公开(公告)日：2006-11-02
申请号：US11412921
申请日：2006-04-28
申请人： Mikio Wakamiya , Junichi Shiozawa , Hirofumi Inoue , Mitsuru Sato
发明人： Mikio Wakamiya , Junichi Shiozawa , Hirofumi Inoue , Mitsuru Sato
IPC分类号： H01L29/04
CPC分类号： H01L27/115 , H01L27/10832 , H01L27/10861 , H01L27/11521 , H01L29/40114
摘要： A semiconductor device includes an amorphous silicon film having a principal plane and an insulating film formed by supplying radical oxygen onto the principal plane of the amorphous silicon film.
摘要翻译：半导体器件包括具有主平面的非晶硅膜和通过在非晶硅膜的主平面上供应自由基氧而形成的绝缘膜。

9. 发明申请

US20120282773A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120282773A1
公开(公告)日：2012-11-08
申请号：US13487280
申请日：2012-06-04
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/302
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

10. 发明授权

US07645674B2 Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode 有权
标题翻译：具有形成在元件区域的半导体衬底侧壁上和栅电极的侧壁上的氧化膜的半导体器件
公开(公告)号：US07645674B2
公开(公告)日：2010-01-12
申请号：US11835353
申请日：2007-08-07
申请人： Toshitake Yaegashi , Junichi Shiozawa
发明人： Toshitake Yaegashi , Junichi Shiozawa
IPC分类号： H01L21/336
CPC分类号： H01L29/78 , H01L27/105 , H01L27/11526 , H01L27/11529
摘要： A first isolation is formed on a semiconductor substrate, and a first element region is isolated via the first isolation. A first gate insulating film is formed on the first element region, and a first gate electrode is formed on the first gate insulating film. A second isolation is formed on the semiconductor substrate, and a second element region is isolated via the second isolation. A second gate insulating film is formed on the second element region, and a second gate electrode is formed on the second gate insulating film. A first oxide film is formed between the first isolation and the first element region. A second oxide film is formed between the second isolation and the second element region. The first isolation has a width narrower than the second isolation, and the first oxide film has a thickness thinner than the second oxide film.
摘要翻译：第一隔离形成在半导体衬底上，第一元件区通过第一隔离隔离。第一栅绝缘膜形成在第一元件区上，第一栅电极形成在第一栅极绝缘膜上。第二隔离形成在半导体衬底上，第二元件区通过第二隔离隔离。第二栅极绝缘膜形成在第二元件区域上，第二栅电极形成在第二栅极绝缘膜上。在第一隔离和第一元件区之间形成第一氧化膜。在第二隔离和第二元件区之间形成第二氧化膜。第一隔离物的宽度比第二隔离宽，第一氧化膜的厚度比第二氧化膜薄。

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