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1. 发明授权

US07767041B2 Ag-Bi-base alloy sputtering target, and method for producing the same 有权
标题翻译： Ag-Bi基合金溅射靶及其制造方法
公开(公告)号：US07767041B2
公开(公告)日：2010-08-03
申请号：US10844345
申请日：2004-05-13
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
IPC分类号： C22C5/06 , C22F1/14
CPC分类号： C22C5/06 , C23C14/3414
摘要： The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
摘要翻译：由Ag-Bi基合金制成的溅射靶包含Bi的Bi与Ag的固溶体。溅射靶的沉积Bi强度为0.01at％-1以下，根据X射线衍射的分析结果通过以下数学式（1）计算，和/或预定强度的面积比（ 8个强度的第三至第六强度）为89％以上，其中，通过根据X射线微量分析计算Bi的特征X射线强度的平面分布来获得面积比：沉淀Bi = [IBi（102） / IAg（111）+ IAg（200）+ IAg（220）+ IAg（311））] / [Bi]。通过使用溅射靶可以抑制所得膜中Bi含量的产率的显着降低。

2. 发明申请

US20100038233A1 AG-BI-BASE ALLOY SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： AG-BI-BASE合金喷射靶及其制造方法
公开(公告)号：US20100038233A1
公开(公告)日：2010-02-18
申请号：US12604858
申请日：2009-10-23
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
IPC分类号： C23C14/34 , C21D9/00
CPC分类号： C22C5/06 , C23C14/3414
摘要： The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89 % or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
摘要翻译：由Ag-Bi基合金制成的溅射靶包含Bi的Bi与Ag的固溶体。溅射靶的沉积Bi强度为0.01at％-1以下，根据X射线衍射的分析结果通过以下数学式（1）计算，和/或预定强度的面积比（ 8个强度的第三至第六强度）为89％以上，其中，通过根据X射线微量分析计算Bi的特征X射线强度的平面分布来获得面积比：沉淀Bi = [IBi（102） / IAg（111）+ IAg（200）+ IAg（220）+ IAg（311））] / [Bi]。通过使用溅射靶可以抑制所得膜中Bi含量的产率的显着降低。

3. 发明申请

US20100264018A1 AG BASE SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： AG基础喷射目标及其生产方法
公开(公告)号：US20100264018A1
公开(公告)日：2010-10-21
申请号：US12793257
申请日：2010-06-03
申请人： Katsutoshi TAKAGI , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi TAKAGI , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
IPC分类号： C23C14/34 , B21D28/00
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave

4. 发明授权

US07763126B2 Ag base sputtering target and process for producing the same 有权
标题翻译： Ag基溅射靶及其制造方法
公开(公告)号：US07763126B2
公开(公告)日：2010-07-27
申请号：US10564502
申请日：2004-07-14
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
IPC分类号： C22C1/02
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave−Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations.
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave-Dmin）/ Dave×100（％）Dmax：所有选择位置的粒径D的最大值Dmin： D在所有选定的位置Dave：所有选定位置的粒度D的平均值。

5. 发明授权

US08123875B2 AG base sputtering target and process for producing the same 有权
标题翻译： AG基溅射靶及其制造方法
公开(公告)号：US08123875B2
公开(公告)日：2012-02-28
申请号：US12793257
申请日：2010-06-03
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
IPC分类号： C23C14/34
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave

6. 发明申请

US20060169577A1 Ag base sputtering target and process for producing the same 有权
标题翻译： Ag基溅射靶及其制造方法
公开(公告)号：US20060169577A1
公开(公告)日：2006-08-03
申请号：US10564502
申请日：2004-07-14
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
IPC分类号： C23C14/00
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave−Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 <？in-line-formula description =“In-line Formulas”end =“lead”？> A1 =（D ave x100（％）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”B1 =（D＆lt; ave＆lt; /＆gt; -D＆lt; min＆gt;）/ D大于x100（％）<？in-line-formula description = 所有选定位置的粒度D中的最大值D ：粒度范围内的最小值 D在所有选定位置D ：所有选定位置的粒度D的平均值

7. 发明授权

US07514037B2 AG base alloy thin film and sputtering target for forming AG base alloy thin film 有权
标题翻译： AG基合金薄膜和用于形成AG基合金薄膜的溅射靶
公开(公告)号：US07514037B2
公开(公告)日：2009-04-07
申请号：US10633550
申请日：2003-08-05
申请人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
发明人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
IPC分类号： C22C5/06
CPC分类号： C22C5/06 , C22C1/002 , C22C5/08 , C23C14/024 , C23C14/185 , C23C14/205 , C23C14/3414 , C23C14/584 , G02B5/0808 , G11B7/252 , G11B7/2531 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/266 , Y10T428/10 , Y10T428/1059 , Y10T428/1095 , Y10T428/12 , Y10T428/12431 , Y10T428/12896 , Y10T428/12924 , Y10T428/21 , Y10T428/265 , Y10T428/31678
摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.
摘要翻译：本发明涉及一种Ag合金膜。特别优选用作在光信息记录介质领域中具有高导热性/高反射率/高耐久性的光学信息记录介质的反射膜或半透射反射膜，Ag聚集性优异的电磁屏蔽膜电阻，反射型液晶显示装置背面的光反射膜等。本发明的Ag合金膜包含总量为0.005〜10％（以％计）的Bi和/或Sb的Ag基合金。此外，本发明涉及用于沉积这种Ag合金膜的溅射靶。

8. 发明授权

US07419711B2 Ag base alloy thin film and sputtering target for forming Ag base alloy thin film 有权
标题翻译： Ag基合金薄膜和用于形成Ag基合金薄膜的溅射靶
公开(公告)号：US07419711B2
公开(公告)日：2008-09-02
申请号：US11313815
申请日：2005-12-22
申请人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
发明人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
IPC分类号： B32B3/02
CPC分类号： C22C5/06 , C22C1/002 , C22C5/08 , C23C14/024 , C23C14/185 , C23C14/205 , C23C14/3414 , C23C14/584 , G02B5/0808 , G11B7/252 , G11B7/2531 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/266 , Y10T428/10 , Y10T428/1059 , Y10T428/1095 , Y10T428/12 , Y10T428/12431 , Y10T428/12896 , Y10T428/12924 , Y10T428/21 , Y10T428/265 , Y10T428/31678
摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.
摘要翻译：本发明涉及一种Ag合金膜。特别优选用作在光信息记录介质领域中具有高导热性/高反射率/高耐久性的光学信息记录介质的反射膜或半透射反射膜，Ag聚集性优异的电磁屏蔽膜电阻，反射型液晶显示装置背面的光反射膜等。本发明的Ag合金膜包含总量为0.005〜10％（以％计）的Bi和/或Sb的Ag基合金。此外，本发明涉及用于沉积这种Ag合金膜的溅射靶。

9. 发明授权

US07203003B2 Reflective Ag alloy film for reflectors and reflector provided with the same 有权
标题翻译：用于反射镜和反光镜的反射Ag合金薄膜
公开(公告)号：US07203003B2
公开(公告)日：2007-04-10
申请号：US10870996
申请日：2004-06-21
申请人： Junichi Nakai , Toshiki Sato , Katsutoshi Takagi , Yuuki Tauchi
发明人： Junichi Nakai , Toshiki Sato , Katsutoshi Takagi , Yuuki Tauchi
IPC分类号： G02B1/10
CPC分类号： G02B5/0858 , B60R1/08 , G02B5/08 , Y10S359/90
摘要： A reflective Ag alloy film includes a Ag—Bi alloy thin film, and a Bi layer and/or a Bi oxide layer formed on the surface and/or between the Ag—Bi alloy thin film and another layer formed on the Ag—Bi alloy thin film. The thickness of the Bi layer and/or the Bi oxide layer is 2.0 nm or below. The Ag—Bi alloy thin film of the reflective Ag alloy film has a Bi content in the range of 0.01 to 3.0 at %. A reflector is formed by depositing the Ag—Bi alloy thin film on a base member.
摘要翻译：反应性Ag合金膜包括Ag-Bi合金薄膜，在Ag-Bi合金薄膜和形成在Ag-Bi合金上的另一层之间的表面上和/或之间形成的Bi层和/或Bi氧化物层薄膜。 Bi层和/或Bi氧化物层的厚度为2.0nm以下。反应性Ag合金膜的Ag-Bi合金薄膜的Bi含量为0.01〜3.0原子％。通过将Ag-Bi合金薄膜沉积在基底构件上形成反射体。

10. 发明授权

US08936856B2 AG base alloy thin film and sputtering target for forming AG base alloy thin film 有权
公开(公告)号：US08936856B2
公开(公告)日：2015-01-20
申请号：US13437350
申请日：2012-04-02
申请人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
发明人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
IPC分类号： B32B15/00 , C22C5/06 , C22C5/08 , C22C1/00 , C23C14/02 , C23C14/18 , C23C14/20 , C23C14/34 , C23C14/58 , G02B5/08 , G11B7/252 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/26 , G11B7/2531
CPC分类号： C22C5/06 , C22C1/002 , C22C5/08 , C23C14/024 , C23C14/185 , C23C14/205 , C23C14/3414 , C23C14/584 , G02B5/0808 , G11B7/252 , G11B7/2531 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/266 , Y10T428/10 , Y10T428/1059 , Y10T428/1095 , Y10T428/12 , Y10T428/12431 , Y10T428/12896 , Y10T428/12924 , Y10T428/21 , Y10T428/265 , Y10T428/31678
摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

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