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    • 1. 发明授权
    • Method and apparatus for slicing semiconductor wafers
    • 用于切割半导体晶片的方法和装置
    • US5524604A
    • 1996-06-11
    • US87324
    • 1993-07-08
    • Katsuo Honda
    • Katsuo Honda
    • H01L21/304B28D5/00B28D5/02B28D1/04
    • B28D5/0058B28D5/0088B28D5/028
    • A method and apparatus for slicing semiconductor wafers. An inner peripheral cutting edge has a doughnut-shaped blade with electro-deposited diamond grains. The blade is attached to a moving trestle. The moving trestle moves along rails located on both sides of the inner peripheral cutting edge and is driven by instruction signals from a control section. A workpiece is placed within the inner peripheral cutting edge and rotated about the axis thereof by a motor. The motor is mounted on a beam member and is driven by instruction signals from the control section. With this arrangement, the inner peripheral cutting edge is rotated in the direction of arrow A. Then, the moving trestle moves in the direction of arrow B by the control section and the workpiece is pressed against a grindstone on the inner peripheral cutting edge cutting the workpiece by a predetermined value. Thereafter, the moving trestle is stopped by the control section and the workpiece is rotated about the axis thereof by driving the motor to cut the remainder part of the workpiece.
    • 一种用于切割半导体晶片的方法和装置。 内周切削刃具有带有电沉积金刚石晶粒的环形刀片。 刀片连接到移动的支架上。 移动的支架沿着位于内周切削刃两侧的轨道移动,并由来自控制部分的指令信号驱动。 将工件放置在内周切削刃内并通过马达围绕其轴线旋转。 电机安装在梁构件上,并由来自控制部分的指令信号驱动。 通过这种布置,内周切削刃沿箭头A的方向旋转。然后,移动的支架通过控制部分沿箭头B的方向移动,并且工件被压靠在内周切削刃上的磨石上, 工件预定值。 此后,通过控制部分停止移动的支架,并且通过驱动电动机来切割工件的剩余部分,工件围绕其轴线旋转。
    • 4. 发明授权
    • Method of chamfering semiconductor wafer
    • 倒角半导体晶圆的方法
    • US5295331A
    • 1994-03-22
    • US977889
    • 1992-11-18
    • Katsuo HondaYoshio KamoshitaShinji ShibaokaKatsuhiro Tago
    • Katsuo HondaYoshio KamoshitaShinji ShibaokaKatsuhiro Tago
    • B24B9/06H01L21/304B24B1/00
    • H01L21/02021B24B9/065
    • According to the present invention, the rotary axis O--O of a grindstone 22 is inclined to the rotary axis P--P of a semiconductor wafer 20 through an angle .theta. in a direction of the tangent line of the semiconductor wafer. Accordingly, a moving direction of abrasive grains of the grindstone 22 is divided into two including a component force A.sub.1 in the grinding direction and a component force A.sub.2 in the perpendicular direction, and these component forces increase the number of acting abrasive grains, so that the accuracy of the chamfering shape and the surface roughness can be improved. According to the present invention, the peripheral edge of the rotating semiconductor wafer is chamfered while the rotating grindstone 22 is reciprocatingly moved along the inclined grinding surface 24, whereby the number of the acting abrasive grains are increased, so that the accuracy of the chamfering shape and the surface roughness can be improved.
    • 根据本发明,磨石22的旋转轴O-O相对于半导体晶片20的旋转轴P-P在半导体晶片的切线方向上以角度(θ)倾斜。 因此,磨石22的磨粒的移动方向分为磨削方向上的分力A1和垂直方向的分力A2,这些分力增加了作用磨粒的数量, 可以提高倒角形状和表面粗糙度的精度。 根据本发明,旋转的半导体晶片的周边边缘被倒角,同时旋转的磨石22沿着倾斜研磨表面24往复移动,由此增加作用磨粒的数量,使得倒角形状的精度 可以提高表面粗糙度。
    • 6. 发明授权
    • Planarization apparatus with grinding and etching devices and holding device for moving workpiece between said devices
    • 具有研磨和蚀刻装置的平面化装置以及用于在所述装置之间移动工件的保持装置
    • US06752701B1
    • 2004-06-22
    • US09718387
    • 2000-11-24
    • Katsuo Honda
    • Katsuo Honda
    • B24B700
    • H01L21/6708B24B7/228H01L21/67075
    • In the planarization apparatus, an etching stage is installed in a body where a rough grinding stage and a finishing grinding stage are disposed, and the rough grinding, finishing grinding, and etching of a wafer are performed in the same planarization apparatus. A chuck for holding the wafer is moved in an order through the rough grinding stage, the finishing grinding stage and the etching stage while keeping holding the wafer. When the chuck is positioned at the etching stage, the chuck is moved up toward an etching vessel and the wafer that is held by the chuck is housed in the etching vessel. In this state, etching solution is projected on the wafer from a nozzle and the wafer is etched.
    • 在平坦化装置中,在设置粗磨阶段和精磨阶段的主体中安装蚀刻阶段,并且在同一平面化装置中进行晶片的粗磨,精磨和蚀刻。 用于保持晶片的卡盘在保持晶片的同时通过粗磨阶段,精磨阶段和蚀刻阶段的顺序移动。 当卡盘位于蚀刻阶段时,卡盘向上移动到蚀刻容器,并且由卡盘保持的晶片容纳在蚀刻容器中。 在这种状态下,蚀刻溶液从喷嘴投射在晶片上,并且蚀刻晶片。
    • 10. 发明授权
    • Surface grinding method and apparatus
    • 表面研磨方法及装置
    • US5816895A
    • 1998-10-06
    • US785487
    • 1997-01-17
    • Katsuo Honda
    • Katsuo Honda
    • B24B7/16B24B7/22B24B49/02B24B1/00
    • B24B37/013B24B49/02B24B7/16B24B7/228
    • A semiconductor wafer is placed on a table, and a grinding wheel grinds the surface of the semiconductor wafer. Non-contact sensors are arranged above the semiconductor wafer to detect the thickness of the semiconductor wafer during grinding. Each piece of information relating to the thickness is output to a CPU. Piezoelectric devices are arranged at regular intervals between a flange, which is secured to a grinding wheel spindle, and a frame 40. Voltages applied to the piezoelectric devices are controlled by a piezoelectric device controller which is controlled by the CPU. When the piezoelectric devices are driven, the attitude of the grinding wheel spindle is controlled in such a manner as to be rocked with regard to the table. If the CPU calculates the detected values of the sensors during the grinding, the direction and magnitude of inclination of the table and the grinding wheel spindle can be found. Then, the attitude of the grinding wheel spindle is controlled, so that the surface of the semiconductor wafer can be ground to be flat.
    • 将半导体晶片放置在工作台上,并且研磨轮研磨半导体晶片的表面。 非接触传感器布置在半导体晶片的上方,以在研磨期间检测半导体晶片的厚度。 每个与厚度相关的信息都输出到CPU。 压电元件以固定在砂轮主轴的凸缘与框架40之间的规则间隔布置。施加到压电元件的电压由由CPU控制的压电器件控制器控制。 当压电装置被驱动时,砂轮主轴的姿态被控制成相对于工作台摇摆的方式。 如果CPU在磨削过程中计算出传感器的检测值,则可以找到工作台和砂轮主轴的倾斜方向和大小。 然后,控制砂轮主轴的姿态,使得半导体晶片的表面可以被研磨成平坦的。