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    • 4. 发明授权
    • Ion implanter
    • 离子注入机
    • US4633138A
    • 1986-12-30
    • US766393
    • 1985-08-16
    • Katsumi TokiguchiOsami OkadaNoriyuki SakudoHidemi Koike
    • Katsumi TokiguchiOsami OkadaNoriyuki SakudoHidemi Koike
    • G21K5/10H01J37/317H01L21/265G21K5/00H01J7/24
    • H01J37/3171G21K5/10
    • In order to implant ions uniformly in a plurality of wafers, carriers, on which a plurality of wafers are mounted, are moved along a straight line one after another. An ion implanter comprises a beam sweep width controller for controlling the beam sweep width in such a manner that the area scanned with the ion beam by sweeping it coincides approximately with the shape of the wafers in which ions are to be implanted and a carrier speed controller for controlling the carrier speed, depending on the beam sweep width so that the dose of ions implanted in the wafers is uniform. The beam sweep width controller includes a detector for detecting the width of a wafer in which ions are being implanted in the one direction and a controller for varying the beam sweep width, depending on the width of the wafer thus detected. The carrier speed controller varies the carrier speed inversely proportionally to the width of the wafer thus detected.
    • 为了将离子均匀地注入到多个晶片中,其上安装有多个晶片的载体沿着直线一个接一个地移动。 离子注入机包括用于以这样一种方式控制光束扫描宽度的光束扫描宽度控制器,其中通过扫描其被离子束扫描的区域大致与离子将被注入的晶片的形状重合,并且载波速度控制器 用于根据光束扫描宽度控制载体速度,使得植入晶片中的离子的剂量是均匀的。 光束扫描宽度控制器包括检测器,用于检测其中沿一个方向注入离子的晶片的宽度,以及用于根据检测到的晶片的宽度改变光束扫描宽度的控制器。 载波速度控制器将载波速度与所检测的晶片的宽度成反比地变化。