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1. 发明授权

US08717475B2 Image pickup apparatus 有权
标题翻译：摄像设备
公开(公告)号：US08717475B2
公开(公告)日：2014-05-06
申请号：US13309517
申请日：2011-12-01
申请人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi , Masanori Ogura
发明人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi , Masanori Ogura
IPC分类号： H04N5/335
CPC分类号： H04N5/3742 , H04N5/376
摘要： There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.
摘要翻译：提供了一种图像拾取装置，包括多个像素，每个像素包括将入射光转换成电信号并累积电信号的光电转换单元，放大并输出来自光电转换单元的信号的放大器晶体管，转移晶体管其将累积在光电转换单元中的电信号传送到放大器晶体管，以及执行预定处理的处理晶体管，以及控制电路，其设置提供给转移晶体管的控制电极的信号电平以关闭转移晶体管低于提供给处理晶体管的控制电极的信号电平，以便关闭处理晶体管。

2. 发明申请

US20110242382A1 IMAGE PICKUP APPARATUS 有权
标题翻译：图像拾取装置
公开(公告)号：US20110242382A1
公开(公告)日：2011-10-06
申请号：US13158613
申请日：2011-06-13
申请人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
IPC分类号： H04N5/335
CPC分类号： H04N5/232 , H04N5/361 , H04N5/3658 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.
摘要翻译：提供了一种图像拾取装置，包括：像素，包括光电转换元件和用于放大和输出在光电转换元件处产生的信号的放大元件;负载晶体管，用于控制在放大元件处流动的电流;以及电位控制用于抑制作为放大元件的输出侧的负载晶体管的第一主电极区域中的电位波动的元件。

3. 发明授权

US07986362B2 Image pickup apparatus maintaining constant potential of load-transistor main electrode 有权
标题翻译：负载三极管主电极保持恒定电位的摄像装置
公开(公告)号：US07986362B2
公开(公告)日：2011-07-26
申请号：US11861790
申请日：2007-09-26
申请人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
IPC分类号： H04N5/335
CPC分类号： H04N5/232 , H04N5/361 , H04N5/3658 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.
摘要翻译：提供了一种图像拾取装置，包括：像素，包括光电转换元件和用于放大和输出在光电转换元件处产生的信号的放大元件;负载晶体管，用于控制在放大元件处流动的电流;以及电位控制用于抑制作为放大元件的输出侧的负载晶体管的第一主电极区域中的电位波动的元件。

4. 发明授权

US07274394B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07274394B2
公开(公告)日：2007-09-25
申请号：US10622540
申请日：2003-07-21
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N3/14 , H01L21/336 , H01L31/062 , H01L27/00
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.
摘要翻译：一种制造具有光电转换单元，转移MOS晶体管，设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤，以及通过离子注入形成第五半导体区域的第二步骤使用栅电极作为掩模，以第二能量以第二角度的第二导电类型的杂质。通过离子注入第二导电类型的杂质形成第四半导体区域。第二能量小于第一能量，并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度，其中第二角度大于第一角度，并且执行第一和第三步骤分别。

5. 发明授权

US07129985B1 Image sensing apparatus arranged on a single substrate 有权
标题翻译：图像感测装置布置在单个基板上
公开(公告)号：US07129985B1
公开(公告)日：2006-10-31
申请号：US09444675
申请日：1999-11-22
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Tetsunobu Kochi , Katsuhito Sakurai , Toshiaki Endo , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Tetsunobu Kochi , Katsuhito Sakurai , Toshiaki Endo , Hiroki Hiyama
IPC分类号： H04N5/225 , H04N5/335
CPC分类号： H04N5/335
摘要： A sensor integrated on a single semiconductor substrate comprises a sensor block including a pixel unit including a plurality of pixels each including a light-receiving element and scanning units for selecting a pixel of the pixel unit, and a signal processing block for processing a signal output from the sensor block. To reduce noise and power consumption, the power supply voltage or the amplitude or high level of a clock signal used in the sensor block is higher than the power supply voltage of the signal processing block.
摘要翻译：集成在单个半导体衬底上的传感器包括传感器块，其包括像素单元，该像素单元包括多个像素，每个像素包括光接收元件和用于选择像素单元的像素的扫描单元，以及用于处理信号输出的信号处理块从传感器块。为了降低噪声和功耗，传感器模块中使用的时钟信号的电源电压或振幅或高电平高于信号处理模块的电源电压。

6. 发明授权

US06653617B2 Photoelectric conversion device 有权
公开(公告)号：US06653617B2
公开(公告)日：2003-11-25
申请号：US09897033
申请日：2001-07-03
申请人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi
发明人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi
IPC分类号： H01L3100
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623
摘要： A photoelectric conversion device having a substrate, a light reception area formed on a surface of the substrate, the light reception area having at least one unit pixel, an insulating layer formed on the substrate including the light reception area, and a light shielding group made of a plurality of light shieldings and formed through the insulating layer along a direction perpendicular to the substrate, the light shielding group surrounding the light reception area.

7. 发明授权

US08138528B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08138528B2
公开(公告)日：2012-03-20
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

8. 发明授权

US07705373B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07705373B2
公开(公告)日：2010-04-27
申请号：US11773731
申请日：2007-07-05
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.
摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元，位于第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管，第二导电类型的第四半导体区域和设置在第一半导体区域上的绝缘膜上的栅电极半导体区域，以将电荷载体从第二半导体区域转移到第四半导体区域。光电转换单元和转移MOS晶体管设置在基板上。第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域，并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在在第四半导体区域中的栅电极。转移MOS晶体管的漏极包括第四和第六半导体区域，并且偏置被施加到漏极，并且在从第二半导体区域读出电荷载流子期间，第五半导体区域被耗尽。

9. 发明授权

US07456882B1 Image pickup device 有权
标题翻译：图像拾取装置
公开(公告)号：US07456882B1
公开(公告)日：2008-11-25
申请号：US09625843
申请日：2000-07-26
申请人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Yuichiro Yamashita , Tomoya Yoneda
发明人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Yuichiro Yamashita , Tomoya Yoneda
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14643 , H04N5/3597
摘要： An image pickup device includes pixels each including a photoelectric conversion unit and a transfer switch for transferring a photoelectric conversion signal generated by the photoelectric conversion unit, and a driver for applying a pulse to the transfer switch a plurality of times when the signal generated by the photoelectric conversion unit is transferred via the transfer switch.
摘要翻译：图像拾取装置包括像素，每个像素包括光电转换单元和用于传送由光电转换单元生成的光电转换信号的转移开关，以及用于当由该光电转换单元产生的信号产生的信号多次向转印开关施加脉冲的驱动器光电转换单元通过转换开关传送。

10. 发明授权

US07352400B2 Solid-state image pickup apparatus having a differential output 失效
标题翻译：具有差分输出的固态图像拾取装置
公开(公告)号：US07352400B2
公开(公告)日：2008-04-01
申请号：US10323632
申请日：2002-12-20
申请人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama , Masaru Fujimura
发明人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama , Masaru Fujimura
IPC分类号： H04N5/217 , H04N3/14 , H04N5/335
CPC分类号： H04N5/3577 , H04N5/378
摘要： An image pickup apparatus including: a plurality of photoelectric conversion elements for photoelectrically converting light from an object, a first output line to which signals from the plurality of photoelectric conversion elements are successively outputted, a plurality of first switches connected to the first output line to output the signals from the plurality of photoelectric conversion elements to the first output line, a second output line to which a reference signal is supplied, a plurality of second switches connected to the second output line to supply the reference signal to the second output line, a scanning circuit which controls the plurality of first switches and the plurality of second switches, and a differential circuit which obtains a difference between the signal from the first output line and the signal from the second output line.
摘要翻译：一种图像拾取装置，包括：多个用于光电转换物体的光的光电转换元件，连续输出来自多个光电转换元件的信号的第一输出线，连接到第一输出线的多个第一开关，将来自多个光电转换元件的信号输出到第一输出线，提供参考信号的第二输出线，连接到第二输出线的多个第二开关，以将参考信号提供给第二输出线，控制多个第一开关和多个第二开关的扫描电路，以及获得来自第一输出线的信号和来自第二输出线的信号之间的差的差分电路。

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