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1. 发明授权

US07456882B1 Image pickup device 有权
标题翻译：图像拾取装置
公开(公告)号：US07456882B1
公开(公告)日：2008-11-25
申请号：US09625843
申请日：2000-07-26
申请人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Yuichiro Yamashita , Tomoya Yoneda
发明人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Yuichiro Yamashita , Tomoya Yoneda
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14643 , H04N5/3597
摘要： An image pickup device includes pixels each including a photoelectric conversion unit and a transfer switch for transferring a photoelectric conversion signal generated by the photoelectric conversion unit, and a driver for applying a pulse to the transfer switch a plurality of times when the signal generated by the photoelectric conversion unit is transferred via the transfer switch.
摘要翻译：图像拾取装置包括像素，每个像素包括光电转换单元和用于传送由光电转换单元生成的光电转换信号的转移开关，以及用于当由该光电转换单元产生的信号产生的信号多次向转印开关施加脉冲的驱动器光电转换单元通过转换开关传送。

2. 发明授权

US07274394B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07274394B2
公开(公告)日：2007-09-25
申请号：US10622540
申请日：2003-07-21
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N3/14 , H01L21/336 , H01L31/062 , H01L27/00
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.
摘要翻译：一种制造具有光电转换单元，转移MOS晶体管，设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤，以及通过离子注入形成第五半导体区域的第二步骤使用栅电极作为掩模，以第二能量以第二角度的第二导电类型的杂质。通过离子注入第二导电类型的杂质形成第四半导体区域。第二能量小于第一能量，并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度，其中第二角度大于第一角度，并且执行第一和第三步骤分别。

3. 发明授权

US07129985B1 Image sensing apparatus arranged on a single substrate 有权
标题翻译：图像感测装置布置在单个基板上
公开(公告)号：US07129985B1
公开(公告)日：2006-10-31
申请号：US09444675
申请日：1999-11-22
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Tetsunobu Kochi , Katsuhito Sakurai , Toshiaki Endo , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Tetsunobu Kochi , Katsuhito Sakurai , Toshiaki Endo , Hiroki Hiyama
IPC分类号： H04N5/225 , H04N5/335
CPC分类号： H04N5/335
摘要： A sensor integrated on a single semiconductor substrate comprises a sensor block including a pixel unit including a plurality of pixels each including a light-receiving element and scanning units for selecting a pixel of the pixel unit, and a signal processing block for processing a signal output from the sensor block. To reduce noise and power consumption, the power supply voltage or the amplitude or high level of a clock signal used in the sensor block is higher than the power supply voltage of the signal processing block.
摘要翻译：集成在单个半导体衬底上的传感器包括传感器块，其包括像素单元，该像素单元包括多个像素，每个像素包括光接收元件和用于选择像素单元的像素的扫描单元，以及用于处理信号输出的信号处理块从传感器块。为了降低噪声和功耗，传感器模块中使用的时钟信号的电源电压或振幅或高电平高于信号处理模块的电源电压。

4. 发明申请

US20070013796A1 Color filter array and image pickup apparatus having a color filter array 有权
标题翻译：滤色器阵列和具有滤色器阵列的图像拾取装置
公开(公告)号：US20070013796A1
公开(公告)日：2007-01-18
申请号：US11473024
申请日：2006-06-23
申请人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N9/04
CPC分类号： H04N9/045
摘要： An image pickup apparatus having a plurality of pixels; and a color filter array of four colors disposed on the plurality of pixels, wherein the color filter array has a periodicity of two rows×two columns, and colors of four color filters in a periodical unit of two rows×two columns are all different.
摘要翻译：一种具有多个像素的图像拾取装置; 以及设置在所述多个像素上的四种颜色的滤色器阵列，其中所述滤色器阵列具有两列两列的周期性，并且两列两列的周期性单位中的四个滤色器的颜色都是不同的。

5. 发明授权

US06946637B2 Image sensing device using MOS type image sensing elements 失效
标题翻译：图像感测器件采用MOS型摄像元件
公开(公告)号：US06946637B2
公开(公告)日：2005-09-20
申请号：US10680181
申请日：2003-10-08
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/146 , H04N5/355 , H04N5/363 , H04N5/365 , H04N5/374 , H04N5/3745 , H01J40/14
CPC分类号： H04N5/37452 , H01L27/14609 , H01L27/14643 , H04N5/3559 , H04N5/363 , H04N5/365 , H04N5/374 , H04N5/3741
摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.
摘要翻译：在具有包括光电转换元件的多个像素单元的光电转换装置中，具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径存储在栅极中的信号电荷，用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关，当用于复位栅极的复位电压场效应晶体管是V Sig0 ，场效应晶体管的阈值电压为V th，则流过场效应晶体管的电流为I / ，经由第一电源线施加的电压为V C1，并且第一开关的串联电阻为R＆lt;＆lt;＆gt;，每个像素单元被配置为满足所确定的条件通过V c1 <！ - SIPO

6. 发明授权

US06839084B1 Image pickup apparatus capable of switching modes based on signals from photoelectric conversion pixels 有权
标题翻译：能够根据来自光电转换像素的信号切换模式的摄像装置
公开(公告)号：US06839084B1
公开(公告)日：2005-01-04
申请号：US09333748
申请日：1999-06-16
申请人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai
发明人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai
IPC分类号： H04N1/028 , H04N5/232 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/378 , H04N5/77 , H04N5/907 , H04N3/14 , H04N5/217
CPC分类号： H04N5/3575 , H04N5/23212 , H04N5/23245 , H04N5/772 , H04N5/907
摘要： In order to select an image pickup mode corresponding to purposes, there is provided a photoelectric conversion device comprising a plurality of photoelectric conversion pixels; and a control circuit for controlling a first mode for reading out first and second signals from each of the photoelectric conversion pixels, and a second mode for reading out the first signal from each of the photoelectric conversion pixels, wherein the first signal includes a noise signal produced upon resetting each of the photoelectric conversion pixels, and an optical signal produced by accumulating a photocharge, and the second signal includes a noise signal produced upon resetting each of the photoelectric conversion pixels.
摘要翻译：为了选择对应于目的的图像拾取模式，提供了包括多个光电转换像素的光电转换装置; 以及控制电路，用于控制用于从每个光电转换像素读出第一和第二信号的第一模式，以及用于从每个光电转换像素读出第一信号的第二模式，其中第一信号包括噪声信号在复位每个光电转换像素时产生的光信号和通过累积光电荷产生的光信号，并且第二信号包括在复位每个光电转换像素时产生的噪声信号。

7. 发明授权

US08395193B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08395193B2
公开(公告)日：2013-03-12
申请号：US13364601
申请日：2012-02-02
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

8. 发明授权

US06831685B1 Solid-state image pickup element 失效
标题翻译：固态摄像元件
公开(公告)号：US06831685B1
公开(公告)日：2004-12-14
申请号：US09316947
申请日：1999-05-24
申请人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N964
CPC分类号： H04N5/3698 , H04N5/3595 , H04N5/376 , H04N5/378
摘要： This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.
摘要翻译：本发明提供一种固态摄像元件，包括：传感器单元，包括多条光电转换单元，用于通过光电转换从接收的光产生电荷;存储单元，包括多行存储单元，用于存储来自多条光电转换单元，用于将信号从传感器单元传送到存储单元的转移单元，用于使存储单元中的任意块的存储单元输出来自光电转换单元的图像信号的控制单元并且使与所述任意块的存储单元对应的光电转换单元输出噪声信号，以及用于计算图像信号和噪声信号之间的差的减法单元。

9. 发明授权

US06605850B1 Solid-state image pickup device using layers having different refractive indices 有权
$Solid-state image pickup device using layers having different refractive indices$
标题翻译：使用具有不同折射率的层的固态图像拾取装置
公开(公告)号：US06605850B1
公开(公告)日：2003-08-12
申请号：US09706860
申请日：2000-11-07
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L2714
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14643 , H01L27/14692 , H01L27/14698
摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
摘要翻译：为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率光电转换元件与第二层间层不同。

10. 发明授权

US06188094B1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US06188094B1
公开(公告)日：2001-02-13
申请号：US09270008
申请日：1999-03-16
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27148
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14643 , H01L27/14692 , H01L27/14698
摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
摘要翻译：为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率光电转换元件与第二层间层不同。

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