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    • 6. 发明申请
    • Network device with traffic shaping functions and bandwidth control method using leaky bucket algorithm
    • 具有流量整形功能的网络设备和使用泄漏桶算法的带宽控制方法
    • US20060067233A1
    • 2006-03-30
    • US11034630
    • 2005-01-13
    • Nobuyuki FukudaTatsuji Hamamura
    • Nobuyuki FukudaTatsuji Hamamura
    • H04L12/26
    • H04L47/21H04L12/5601H04L12/5602H04L2012/5637
    • A network device with bandwidth usage control functions using a leaky bucket algorithm to provide a traffic service conforming to given user parameters. A leaky bucket counter produces a new leaky-bucket (LB) count at predetermined cell slot intervals by adding an output rate parameter to the previous count, and then by subtracting therefrom a full rate parameter if a cell output request signal is active. An upper limit calculator determines an upper limit for such LB count values, and a count modifier applies this upper limit, thereby producing a modified LB count. When the modified LB count from the count modifier equals or exceeds an output reference value, a comparator activates an output timing signal, which permits transmission of a pending cell in a buffer.
    • 具有使用泄漏桶算法的带宽使用控制功能的网络设备来提供符合给定用户参数的业务服务。 泄漏桶计数器以预定的小区时隙间隔产生新的泄漏桶(LB)计数,通过将输出速率参数加到先前的计数中,然后如果小区输出请求信号有效,则从其中减去全速率参数。 上限计算器确定这样的LB计数值的上限,并且计数修改器应用该上限,从而产生修改的LB计数。 当来自计数修改器的经修改的LB计数等于或超过输出参考值时,比较器激活输出定时信号,这允许在缓冲器中传输待决单元。
    • 7. 发明授权
    • Single crystal semiconductor manufacturing apparatus and method
    • 单晶半导体制造装置及方法
    • US07396406B2
    • 2008-07-08
    • US10588533
    • 2004-02-09
    • Hiroshi InagakiMasahiro ShibataShigeki KawashimaNobuyuki Fukuda
    • Hiroshi InagakiMasahiro ShibataShigeki KawashimaNobuyuki Fukuda
    • C30B15/20
    • C30B15/14C30B15/22C30B15/305C30B29/06C30B30/04Y10S117/917Y10T117/10Y10T117/1016Y10T117/1088
    • A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference ΔTc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal (14) and the size (diameter D) of the seed crystal (14). When the seed crystal (14) comes into contact with the melt (5), electric power supplied to a bottom heater (19) is fixed, and a magnetic field produced by a magnet (20) is applied to the melt (5). Electric power supplied to a main heater (9) is controlled so that the temperature at the surface of the melt (5) which the seed crystal (14) comes into contact with may be a target value. After the seed crystal (14) comes into contact with the melt (5), single crystal silicon is pulled up without performing a necking process.
    • 一种单晶半导体制造方法,用于在晶种与熔体接触的同时,在不改变或几乎不变化供给加热器的电力的情况下实现无位错单晶。 根据添加到晶种(14)中的杂质浓度(C)和晶种(14)的尺寸(直径D)来确定晶种中不产生位错的允许温差DeltaTc。 当籽晶(14)与熔体(5)接触时,提供给底部加热器(19)的电力被固定,并且由磁体(20)产生的磁场被施加到熔体(5)。 控制提供给主加热器(9)的电力使得晶种(14)接触的熔体(5)的表面处的温度可以是目标值。 在籽晶(14)与熔体(5)接触之后,单晶硅被拉起而不进行缩颈处理。