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1. 发明授权

US06793733B2 Gas distribution showerhead 失效
标题翻译：燃气分配喷头
公开(公告)号：US06793733B2
公开(公告)日：2004-09-21
申请号：US10057280
申请日：2002-01-25
申请人： Karthik Janakiraman , Nitin Ingle , Zheng Yuan , Steven Gianoulakis
发明人： Karthik Janakiraman , Nitin Ingle , Zheng Yuan , Steven Gianoulakis
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455
摘要： A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.
摘要翻译：用于半导体制造工艺的气体分配喷头具有面板，该面板具有细长狭槽或通道形式的气体出口。根据本发明的实施例，使用细长的气体出口端口基本上减少了喷头与晶片紧密隔开的沉积材料的不期望的斑点和条纹的发生。还公开了一种具有锥形轮廓的面板的喷头，以在近距离的盘对晶片间隔处减小沉积材料的边缘厚度。

2. 发明申请

US20060005856A1 Reduction of reactive gas attack on substrate heater 审中-公开
标题翻译：减少基板加热器的反应气体攻击
公开(公告)号：US20060005856A1
公开(公告)日：2006-01-12
申请号：US10882129
申请日：2004-06-29
申请人： David Sun , Keith Harvey , Nitin Ingle , Karthik Janakiraman
发明人： David Sun , Keith Harvey , Nitin Ingle , Karthik Janakiraman
IPC分类号： C25F3/12 , C23F1/00
CPC分类号： H01J37/32477 , B08B7/0035 , C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： Embodiments of the present invention provide a method of reducing damage to the substrate support by the cleaning gas during a cleaning process of the processing chamber, such as by reducing aluminum fluoride formation on the substrate support. In one embodiment, a method of cleaning a semiconductor process chamber which is used for processing a substrate disposed on a surface of a substrate support comprises introducing a cleaning gas into a process chamber through an inlet facing a surface of a substrate support. The inlet is spaced from the surface of the substrate support by a clean spacing. Reactive species are provided from the cleaning gas to clean the process chamber. The clean spacing is substantially greater than a process spacing between the inlet and the surface of the substrate support during processing of a substrate on the substrate support in the process chamber.
摘要翻译：本发明的实施例提供了一种在处理室的清洁处理期间减少由清洁气体对基板支撑件的损害的方法，例如通过减少基板支撑件上的氟化铝形成。在一个实施例中，清洁用于处理设置在基板支撑件的表面上的基板的半导体处理室的方法包括通过面向基板支撑件的表面的入口将清洁气体引入处理室。入口与衬底支撑件的表面间隔一定距离。从清洁气体提供活性物质以清洁处理室。在处理处理室中的衬底支撑件上的衬底的处理期间，清洁间距明显大于衬底支撑件的入口和表面之间的工艺间隔。

3. 发明授权

US06843882B2 Gas flow control in a wafer processing system having multiple chambers for performing same process 失效
标题翻译：在具有用于执行相同处理的多个室的晶片处理系统中的气体流量控制
公开(公告)号：US06843882B2
公开(公告)日：2005-01-18
申请号：US10263556
申请日：2002-10-02
申请人： Karthik Janakiraman , Victor Wang , Vikash Banthia , Teresa Winson , Nitin Ingle
发明人： Karthik Janakiraman , Victor Wang , Vikash Banthia , Teresa Winson , Nitin Ingle
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , H01L21/00 , H01L21/677 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67754 , C23C16/4412 , C23C16/455 , C23C16/52 , H01L21/67017 , H01L21/67178 , H01L21/6719
摘要： A system for processing substrates comprises a plurality of process chambers. Each process chamber includes an inlet gas distribution member connected to an inlet gas line to distribute gas from the inlet gas line into the process chamber, and a gas outlet. The inlet gas distribution member has an inlet gas distribution member impedance to a gas flow through the inlet gas distribution member into the process chamber. The plurality of process chambers are substantially identical. A source gas delivery line is connected to the inlet gas lines of the plurality of process chambers to supply a gas flow to be divided into the inlet gas lines. A plurality of tunable upstream gas restrictors are each disposed in one of the inlet gas lines connected to the inlet gas distribution members of the process chambers and are configured to adjust a flow rate into the corresponding process chamber.
摘要翻译：用于处理衬底的系统包括多个处理室。每个处理室包括连接到入口气体管线以将气体从入口气体管线分配到处理室中的入口气体分配构件和气体出口。入口气体分配构件具有入口气体分配构件对通过入口气体分配构件的气体流入处理室的阻抗。多个处理室基本相同。源气体输送管线连接到多个处理室的入口气体管线，以供应待分成入口气体管线的气流。多个可调节的上游气体限制器分别设置在连接到处理室的入口气体分配构件的入口气体管线中的一个中，并且被配置为调节进入相应处理室的流量。

4. 发明申请

US20050136684A1 Gap-fill techniques 审中-公开
标题翻译：间隙填充技术
公开(公告)号：US20050136684A1
公开(公告)日：2005-06-23
申请号：US10746695
申请日：2003-12-23
申请人： Kevin Mukai , Kimberly Branshaw , Zheng Yuan , Xinyun Xia , Xiaolin Chen , Dongqing Li , M. Karim , Van Ton , Cary Ching , Steve Ghanayeim , Nitin Ingle
发明人： Kevin Mukai , Kimberly Branshaw , Zheng Yuan , Xinyun Xia , Xiaolin Chen , Dongqing Li , M. Karim , Van Ton , Cary Ching , Steve Ghanayeim , Nitin Ingle
IPC分类号： C23C16/04 , C23C16/40 , C23C16/505 , H01L21/316 , H01L21/762 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76224 , H01L21/76828 , H01L21/76832 , H01L21/76837
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.
摘要翻译：可以单独地或组合地采用各种技术来改善通过化学气相沉积（CVD）形成的电介质材料的间隙填充性能。在一种方法中，使用次大气化学气相沉积（SACVD）沉积第一介电层，随后通过高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积的第二介电层，。在另一种方法中，在从远程等离子体室流入处理室的反应性离子物质的存在下沉积SACVD介电层，该处理室在沉积过程中执行蚀刻。在另一种方法中，可以使用SACVD与在高温下沉积的氧化物层组合来填充高方位沟槽。

5. 发明申请

US20060030165A1 Multi-step anneal of thin films for film densification and improved gap-fill 有权
标题翻译：用于膜致密化和改善间隙填充的薄膜的多步退火
公开(公告)号：US20060030165A1
公开(公告)日：2006-02-09
申请号：US10990002
申请日：2004-11-16
申请人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
发明人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/02164 , H01L21/02271 , H01L21/02337 , H01L21/31612 , H01L21/31662 , H01L21/67115 , H01L21/76224 , H01L21/76283
摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.
摘要翻译：一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底，含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

6. 发明申请

US20070212850A1 GAP-FILL DEPOSITIONS IN THE FORMATION OF SILICON CONTAINING DIELECTRIC MATERIALS 审中-公开
标题翻译：形成含硅介质材料的GAP填充沉积
公开(公告)号：US20070212850A1
公开(公告)日：2007-09-13
申请号：US11686863
申请日：2007-03-15
申请人： Nitin Ingle , Sidharth Bhatia , Won Bang , Zheng Yuan , Ellie Yieh , Shankar Venkatraman
发明人： Nitin Ingle , Sidharth Bhatia , Won Bang , Zheng Yuan , Ellie Yieh , Shankar Venkatraman
IPC分类号： H01L21/762
CPC分类号： C23C16/045 , C23C16/402 , C23C16/448 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02337 , H01L21/31612 , H01L21/76224 , H01L21/76837
摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate, where the method includes the steps of generating water vapor by contacting hydrogen gas and oxygen gas with a water vapor generation catalyst, and providing the water vapor to the process chamber. The method also includes flowing a silicon-containing precursor into the process chamber housing the substrate, flowing an oxidizing gas into the chamber, and causing a reaction between the silicon-containing precursor, the oxidizing gas and the water vapor to form the dielectric material in the trench. The method may also include increasing over time a ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber to alter a rate of deposition of the dielectric material.
摘要翻译：一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法，其中所述方法包括通过使氢气和氧气与水蒸汽发生催化剂接触而产生水蒸气的步骤，并将水蒸汽提供给该过程房间。该方法还包括将含硅前体流入容纳基底的处理室，使氧化气体流入室内，并使含硅前体，氧化气体和水蒸汽之间的反应形成为沟渠。该方法还可以包括随着时间的推移，含硅前体与氧化气体的比例流入室以改变电介质材料的沉积速率。

7. 发明申请

US20070212847A1 MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL 审中-公开
标题翻译：薄膜薄膜多层退化和改良胶圈
公开(公告)号：US20070212847A1
公开(公告)日：2007-09-13
申请号：US11697105
申请日：2007-04-05
申请人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
发明人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31612 , H01L21/67115
摘要： A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800° C. or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen.
摘要翻译：一种退火衬底的方法，该衬底具有包含形成在介电材料和衬底之间的氮化硅层上的电介质材料的沟槽，其中所述方法包括在第一温度为约800℃或更高的第一温度下退火衬底包含含氧气体的气氛，并在不含氧气的第二气氛中在大约800℃至大约1400℃的第二温度下退火所述基板。

8. 发明申请

US20070281496A1 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 有权
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：US20070281496A1
公开(公告)日：2007-12-06
申请号：US11754440
申请日：2007-05-29
申请人： Nitin Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
发明人： Nitin Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/31612
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

9. 发明申请

US20060148273A1 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
公开(公告)号：US20060148273A1
公开(公告)日：2006-07-06
申请号：US11367866
申请日：2006-03-03
申请人： Nitin Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

10. 发明申请

US20050255667A1 Method of inducing stresses in the channel region of a transistor 失效
标题翻译：在晶体管的沟道区域中产生应力的方法
公开(公告)号：US20050255667A1
公开(公告)日：2005-11-17
申请号：US10846734
申请日：2004-05-14
申请人： Reza Arghavani , Zheng Yuan , Ellie Yieh , Shankar Venkataraman , Nitin Ingle
发明人： Reza Arghavani , Zheng Yuan , Ellie Yieh , Shankar Venkataraman , Nitin Ingle
IPC分类号： H01L21/336 , H01L21/76 , H01L21/8238 , H01L29/00 , H01L29/78
CPC分类号： H01L29/6656 , H01L21/823807 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A method of fabricating a semiconductor device, where the method includes forming on a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.
摘要翻译：一种制造半导体器件的方法，其中所述方法包括在衬底上的晶体管上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间导电的沟道区域，形成与所述晶体管相邻的沟槽，材料在衬底上并在沟槽内，并退火材料，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

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