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1. 发明授权

US06684523B2 Particle removal apparatus 失效
标题翻译：除尘装置
公开(公告)号：US06684523B2
公开(公告)日：2004-02-03
申请号：US10006023
申请日：2001-12-06
申请人： Joel Brad Bailey , Reginald W. Hunter , Steven Gianoulakis
发明人： Joel Brad Bailey , Reginald W. Hunter , Steven Gianoulakis
IPC分类号： F26B1900
CPC分类号： H01L21/6875 , B08B7/00 , H01L21/67017 , H01L21/67051 , H01L21/67069
摘要： Embodiments of the invention generally provide an apparatus for removing particles from a substrate surface, wherein the apparatus includes a substrate support member configured to support a substrate thereon, and a broadband actuator in mechanical communication with the substrate support member. Additionally, an air knife assembly may be positioned proximate a perimeter of the substrate surface, and is configured to deliver a laminar stream of air across the substrate surface in order to remove the dislodged contamination particles therefrom. Alternatively, a plasma source may be used to remove dislodged particles from the area proximate the substrate surface.
摘要翻译：本发明的实施例通常提供一种用于从衬底表面去除颗粒的设备，其中该设备包括被配置为在其上支撑衬底的衬底支撑构件和与衬底支撑构件机械连通的宽带致动器。另外，气刀组件可以被定位在基板表面的周边附近，并且被配置成将层流的空气流输送到基板表面上，以便从其移除排出的污染颗粒。或者，可以使用等离子体源来从邻近衬底表面的区域去除移出的颗粒。

2. 发明申请

US20060234514A1 Gas distribution showerhead featuring exhaust apertures 失效
标题翻译：配有排气孔的气体分配喷头
公开(公告)号：US20060234514A1
公开(公告)日：2006-10-19
申请号：US11452786
申请日：2006-06-13
申请人： Steven Gianoulakis , Karthik Janakiraman
发明人： Steven Gianoulakis , Karthik Janakiraman
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/455 , C23C16/4412 , C23C16/45565
摘要： A method of processing a semiconductor workpiece. The method includes flowing a process gas to a semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate. The method also includes removing gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality of orifices positioned in the gas distribution faceplate.
摘要翻译：一种处理半导体工件的方法。该方法包括通过位于气体分布面板中的第一组多个孔流动工艺气体到半导体工件。该方法还包括通过腔室排气口和定位在气体分布面板中的第二组多个孔口从半导体工件上除去气体。

3. 发明申请

US20050218115A1 Anti-clogging nozzle for semiconductor processing 审中-公开
标题翻译：防堵塞喷嘴用于半导体加工
公开(公告)号：US20050218115A1
公开(公告)日：2005-10-06
申请号：US11080387
申请日：2005-03-14
申请人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Irene Chou , David Sun
发明人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Irene Chou , David Sun
IPC分类号： G01L21/30 , H01L21/302
CPC分类号： C23C16/45563
摘要： Embodiments of the present invention are directed to reducing clogging of nozzles and to reducing flow variance through the nozzles in a semiconductor processing chamber. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply. The nozzle includes a nozzle opening at a distal end. The nozzle includes a nozzle passage extending from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber; and choking the gas flow through the nozzle passage at a choke location which is spaced away from the distal end.
摘要翻译：本发明的实施例涉及减少喷嘴堵塞和减少半导体处理室中的喷嘴的流动变化。在一个实施例中，将气体引入半导体处理室的方法包括提供喷嘴，该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分，以及远离室壁向内取向的远侧部分半导体处理室的内部。喷嘴包括与气体供应连接的近端。喷嘴包括在远端的喷嘴开口。喷嘴包括从近端延伸到远端的喷嘴通道。该方法还包括使气体从气体供应通过喷嘴的近端，喷嘴通道和喷嘴开口流入半导体处理室的内部; 并且在与远端间隔开的扼流位置处阻塞气体流过喷嘴通道。

4. 发明授权

US06793733B2 Gas distribution showerhead 失效
标题翻译：燃气分配喷头
公开(公告)号：US06793733B2
公开(公告)日：2004-09-21
申请号：US10057280
申请日：2002-01-25
申请人： Karthik Janakiraman , Nitin Ingle , Zheng Yuan , Steven Gianoulakis
发明人： Karthik Janakiraman , Nitin Ingle , Zheng Yuan , Steven Gianoulakis
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455
摘要： A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.
摘要翻译：用于半导体制造工艺的气体分配喷头具有面板，该面板具有细长狭槽或通道形式的气体出口。根据本发明的实施例，使用细长的气体出口端口基本上减少了喷头与晶片紧密隔开的沉积材料的不期望的斑点和条纹的发生。还公开了一种具有锥形轮廓的面板的喷头，以在近距离的盘对晶片间隔处减小沉积材料的边缘厚度。

5. 发明授权

US07452827B2 Gas distribution showerhead featuring exhaust apertures 失效
标题翻译：配有排气孔的气体分配喷头
公开(公告)号：US07452827B2
公开(公告)日：2008-11-18
申请号：US11452786
申请日：2006-06-13
申请人： Steven Gianoulakis , Karthik Janakiraman
发明人： Steven Gianoulakis , Karthik Janakiraman
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： C23C16/455 , C23C16/4412 , C23C16/45565
摘要： A method of processing a semiconductor workpiece. The method includes flowing a process gas to a semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate. The method also includes removing gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality of orifices positioned in the gas distribution faceplate.
摘要翻译：一种处理半导体工件的方法。该方法包括通过位于气体分布面板中的第一组多个孔流动工艺气体到半导体工件。该方法还包括通过腔室排气口和定位在气体分布面板中的第二组多个孔口从半导体工件上除去气体。

6. 发明申请

US20060196603A1 Gas baffle and distributor for semiconductor processing chamber 有权
标题翻译：用于半导体处理室的气体挡板和分配器
公开(公告)号：US20060196603A1
公开(公告)日：2006-09-07
申请号：US11075527
申请日：2005-03-07
申请人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Won Bang , David Sun , Yen-Kun Victor Wang
发明人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Won Bang , David Sun , Yen-Kun Victor Wang
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/3244 , H01J2237/3321
摘要： Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.
摘要翻译：本发明的技术涉及将沉积气体分布到基底上。在一个实施例中，提供了用于处理室的气体分配器。气体分配器包括具有气体偏转表面和气体分配器面的主体。气体偏转表面限定清洁气体通路。气体分配器面设置在与气体偏转表面相对的主体的相反侧上，并朝向衬底支撑构件。气体分配器面包括升高的台阶和穿过升高台阶的至少一组孔。所述至少一组孔适于将沉积气体分布在位于所述基板支撑构件上的基板上。

7. 发明申请

US20050103265A1 Gas distribution showerhead featuring exhaust apertures 审中-公开
标题翻译：配有排气孔的气体分配喷头
公开(公告)号：US20050103265A1
公开(公告)日：2005-05-19
申请号：US10717881
申请日：2003-11-19
申请人： Steven Gianoulakis , Karthik Janakiraman
发明人： Steven Gianoulakis , Karthik Janakiraman
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C23C16/455 , C23C16/4412 , C23C16/45565
摘要： Embodiments in accordance with the present invention relate to systems and methods for distributing process gases over the surface of a workpiece. In accordance with one embodiment of the present invention, process gases are flowed from a source to a workpiece surface through a gas distribution showerhead defining a plurality of orifices. The gas distribution showerhead also features a plurality of exhaust orifices for removing material above the wafer surface. The supplemental exhaust afforded by the showerhead exhaust orifices serves to reduce variations in gas velocity attributable to radial flow across the wafer surface, thereby enhancing the uniformity between resulting processing at the wafer edge and center. The ratio of the distribution and exhaust aperture areas may vary or remain constant across the faceplate. Additionally, the size and number of distribution and exhaust apertures may be selected to optimize gas distribution across the semiconductor wafer surface.
摘要翻译：根据本发明的实施例涉及用于在工件的表面上分配工艺气体的系统和方法。根据本发明的一个实施例，工艺气体通过限定多个孔的气体分配喷头从源流向工件表面。气体分配喷头还具有用于去除晶片表面之上的材料的多个排气孔。由喷头排气孔提供的补充排气用于减少归因于晶片表面上的径向流动的气体速度的变化，从而增强晶片边缘和中心处的所得到的处理之间的均匀性。分布和排放孔径面积的比例可能在面板上变化或保持恒定。此外，可以选择分配和排气孔径的尺寸和数量以优化半导体晶片表面上的气体分布。

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