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1. 发明授权

US08643034B2 Monolithic, optoelectronic semiconductor body and method for the production thereof 有权
标题翻译：单片，光电子半导体器件及其制造方法
公开(公告)号：US08643034B2
公开(公告)日：2014-02-04
申请号：US12920317
申请日：2009-02-25
申请人： Karl Engl , Frank Singer , Patrick Rode , Lutz Hoeppel , Martin Strassburg
发明人： Karl Engl , Frank Singer , Patrick Rode , Lutz Hoeppel , Martin Strassburg
IPC分类号： H01L29/207
CPC分类号： H01L27/156 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced.
摘要翻译：光电半导体主体包括半导体层序列，其被细分为至少两个电隔离的子区段。半导体层序列在每个子区域中具有活性层。此外，提供至少三个电接触垫。第一线路级别与至少两个子片段中的第一个以及与第一接触焊盘接触。第二线路级别与至少两个子段中的第二线路接触并且与第二接触焊盘接触。第三线路电平将两个子段彼此连接并与第三接触焊盘接触。此外，线路电平各自布置成与第一主面对置，其中第一主面面用于发射产生的电磁辐射。

2. 发明授权

US08362506B2 Optoelectronic semiconductor body 有权
标题翻译：光电半导体体
公开(公告)号：US08362506B2
公开(公告)日：2013-01-29
申请号：US12678259
申请日：2008-08-27
申请人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
发明人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
IPC分类号： H01L33/12 , H01L33/30
CPC分类号： H01L33/405 , H01L33/007 , H01L33/40 , H01L33/58 , H01L2933/0091
摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.
摘要翻译：光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。

3. 发明申请

US20120086026A1 Optoelectronic Semiconductor Body and Method for the Production Thereof 有权
标题翻译：光电半导体及其制造方法
公开(公告)号：US20120086026A1
公开(公告)日：2012-04-12
申请号：US12920313
申请日：2009-02-25
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Martin Strassburg
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Martin Strassburg
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/0079 , H01L33/382 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.
摘要翻译：光电子半导体本体包括具有第一和第二主侧的基本上平面的半导体层序列，其具有适于产生电磁辐射的有源层。此外，半导体本体包括至少一个沟槽，其切断半导体层序列的有源层并且用于将半导体层序列的有源分为至少两个电绝缘的有源部分层。布置在第二主侧上的第一和第二连接层用于与活性部分层接触。在这种情况下，用于与至少两个有源部分层接触的第一和第二连接层彼此导电连接，使得有源部分层形成串联电路。

4. 发明授权

US08823024B2 Optoelectronic semiconductor body and method for the production thereof 有权
标题翻译：光电半导体体及其制造方法
公开(公告)号：US08823024B2
公开(公告)日：2014-09-02
申请号：US12920313
申请日：2009-02-25
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Martin Strassburg
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Martin Strassburg
IPC分类号： H01L29/207
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/0079 , H01L33/382 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.
摘要翻译：光电子半导体本体包括具有第一和第二主侧的基本上平面的半导体层序列，其具有适于产生电磁辐射的有源层。此外，半导体本体包括至少一个沟槽，其切断半导体层序列的有源层并且用于将半导体层序列的有源分为至少两个电绝缘的有源部分层。布置在第二主侧上的第一和第二连接层用于与活性部分层接触。在这种情况下，用于与至少两个有源部分层接触的第一和第二连接层彼此导电连接，使得有源部分层形成串联电路。

5. 发明申请

US20100230698A1 Optoelectronic Semiconductor Body 有权
标题翻译：光电半导体
公开(公告)号：US20100230698A1
公开(公告)日：2010-09-16
申请号：US12678259
申请日：2008-08-27
申请人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
发明人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
IPC分类号： H01L33/12 , H01L33/30
CPC分类号： H01L33/405 , H01L33/007 , H01L33/40 , H01L33/58 , H01L2933/0091
摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.
摘要翻译：光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。

6. 发明申请

US20110101390A1 Monolithic, Optoelectronic Semiconductor Body and Method for the Production Thereof 有权
标题翻译：单片，光电半导体及其制造方法
公开(公告)号：US20110101390A1
公开(公告)日：2011-05-05
申请号：US12920317
申请日：2009-02-25
申请人： Karl Engl , Frank Singer , Patrick Rode , Lutz Hoppel , Martin Strassburg
发明人： Karl Engl , Frank Singer , Patrick Rode , Lutz Hoppel , Martin Strassburg
IPC分类号： H01L27/15 , H01L33/08
CPC分类号： H01L27/156 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced.
摘要翻译：光电半导体主体包括半导体层序列，其被细分为至少两个电隔离的子区段。半导体层序列在每个子区域中具有活性层。此外，提供至少三个电接触垫。第一线路级别与至少两个子片段中的第一个以及与第一接触焊盘接触。第二线路级别与至少两个子段中的第二线路接触并且与第二接触焊盘接触。第三线路电平将两个子段彼此连接并与第三接触焊盘接触。此外，线路电平各自布置成与第一主面对置，其中第一主面面用于发射产生的电磁辐射。

7. 发明申请

US20100171135A1 Optoelectronic Semiconductor Body and Method for Producing the Same 有权
标题翻译：光电半导体及其制造方法
公开(公告)号：US20100171135A1
公开(公告)日：2010-07-08
申请号：US12596170
申请日：2008-04-24
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sahathil
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sahathil
IPC分类号： H01L33/10
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (2) comprising an active layer (23) suitable for generating electromagnetic radiation and a first and a second electrical connection layer (4, 6), wherein the semiconductor body is intended for the emission of electromagnetic radiation from a front side, the first and second electrical connection layers being located on a rear side opposite the front side and electrically insulated from each other by means of a separating layer (5), the first electrical connection layer (4), second electrical connection layer (6), and the separating layer (5) laterally overlapping each other, and a partial area of the second electrical connection layer (6) extending from the rear side through a penetration (3) through the active layer (23) in the direction of the front side. The invention further relates to a method for producing such an opto-electronic semiconductor body.
摘要翻译：本发明涉及一种具有半导体层序列（2）的光电子半导体本体，该半导体层序列（2）包括适于产生电磁辐射的有源层（23）和第一和第二电连接层（4,6），其中半导体本体是用于从前侧发射电磁辐射，第一和第二电连接层位于与前侧相对的后侧并且通过分离层（5）彼此电绝缘，第一电连接层（4），第二电连接层（6）和分离层（5）横向重叠，并且第二电连接层（6）的从后侧穿过穿透（3）延伸穿过的部分区域活性层（23）。本发明还涉及一种用于制造这种光电半导体本体的方法。

8. 发明申请

US20110272728A1 Radiation-Emitting Semiconductor Chip 有权
标题翻译：辐射发射半导体芯片
公开(公告)号：US20110272728A1
公开(公告)日：2011-11-10
申请号：US12991864
申请日：2009-04-17
申请人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
发明人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
IPC分类号： H01L33/36
CPC分类号： H01L25/167 , H01L33/0079 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).
摘要翻译：提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。载体（5）包括面向半导体本体（2）的主表面（51）。第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。第二半导体层（22）可通过第二接触件（36）电接触。保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。

9. 发明授权

US08450751B2 Optoelectronic semiconductor body and method for producing the same 有权
标题翻译：光电半导体体及其制造方法
公开(公告)号：US08450751B2
公开(公告)日：2013-05-28
申请号：US12596170
申请日：2008-04-24
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.
摘要翻译：光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。半导体本体被设置用于从前侧发射电磁辐射。第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。此外，规定了这种光电子半导体体的制造方法。

10. 发明授权

US08319250B2 Radiation-emitting semiconductor chip 有权
标题翻译：辐射发射半导体芯片
公开(公告)号：US08319250B2
公开(公告)日：2012-11-27
申请号：US12991864
申请日：2009-04-17
申请人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
发明人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
IPC分类号： H01L33/38
CPC分类号： H01L25/167 , H01L33/0079 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).
摘要翻译：提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。载体（5）包括面向半导体本体（2）的主表面（51）。第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。第二半导体层（22）可通过第二接触件（36）电接触。保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。

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