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1. 发明申请

US20100171135A1 Optoelectronic Semiconductor Body and Method for Producing the Same 有权
标题翻译：光电半导体及其制造方法
公开(公告)号：US20100171135A1
公开(公告)日：2010-07-08
申请号：US12596170
申请日：2008-04-24
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sahathil
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sahathil
IPC分类号： H01L33/10
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (2) comprising an active layer (23) suitable for generating electromagnetic radiation and a first and a second electrical connection layer (4, 6), wherein the semiconductor body is intended for the emission of electromagnetic radiation from a front side, the first and second electrical connection layers being located on a rear side opposite the front side and electrically insulated from each other by means of a separating layer (5), the first electrical connection layer (4), second electrical connection layer (6), and the separating layer (5) laterally overlapping each other, and a partial area of the second electrical connection layer (6) extending from the rear side through a penetration (3) through the active layer (23) in the direction of the front side. The invention further relates to a method for producing such an opto-electronic semiconductor body.
摘要翻译：本发明涉及一种具有半导体层序列（2）的光电子半导体本体，该半导体层序列（2）包括适于产生电磁辐射的有源层（23）和第一和第二电连接层（4,6），其中半导体本体是用于从前侧发射电磁辐射，第一和第二电连接层位于与前侧相对的后侧并且通过分离层（5）彼此电绝缘，第一电连接层（4），第二电连接层（6）和分离层（5）横向重叠，并且第二电连接层（6）的从后侧穿过穿透（3）延伸穿过的部分区域活性层（23）。本发明还涉及一种用于制造这种光电半导体本体的方法。

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