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1. 发明申请

US20100166958A1 FABRICATION METHOD AND FABRICATION APPARATUS FOR FABRICATING METAL OXIDE THIN FILM 有权
标题翻译：制造金属氧化物薄膜的制造方法和制造装置
公开(公告)号：US20100166958A1
公开(公告)日：2010-07-01
申请号：US12600665
申请日：2008-05-16
申请人： Kanji Yasui , Hiroshi Nishiyama , Masatoshi Tsukichi , Yasunori Inoue , Masasuke Takata
发明人： Kanji Yasui , Hiroshi Nishiyama , Masatoshi Tsukichi , Yasunori Inoue , Masasuke Takata
IPC分类号： C23C16/458 , C23C16/06 , C23C16/00
CPC分类号： C23C16/40 , C01G9/03 , C01P2002/72 , C23C16/407 , C23C16/448 , H01L21/0237 , H01L21/0242 , H01L21/02554 , H01L21/0262
摘要： Object To provide a technique for efficiently forming a metal oxide thin film made of zinc oxide or the like on a substrate at a low cost, without requiring a large amount of electrical energy.Means of Solution H2 gas and O2 gas or, H2O2 gas, is introduced into a catalytic reactor to make contact with a catalyst to generate H2O gas, and the H2O gas is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit a metal oxide thin film on a substrate and fabricate the metal oxide thin film.
摘要翻译：目的提供一种低成本地在基板上有效地形成由氧化锌等形成的金属氧化物薄膜的技术，而不需要大量的电能。解决方案将H2气体和O2气体或H 2 O 2气体引入催化反应器中以与催化剂接触以产生H 2 O气体，并且将H 2 O气体从催化反应器喷射以与金属化合物气体反应，从而在基板上沉积金属氧化物薄膜并制造金属氧化物薄膜。

2. 发明授权

US08591991B2 Fabrication method and fabrication apparatus for fabricating metal oxide thin film 有权
标题翻译：制造金属氧化物薄膜的制造方法和制造装置
公开(公告)号：US08591991B2
公开(公告)日：2013-11-26
申请号：US12600665
申请日：2008-05-16
申请人： Kanji Yasui , Hiroshi Nishiyama , Masatoshi Tsukichi , Yasunobu Inoue , Masasuke Takata
发明人： Kanji Yasui , Hiroshi Nishiyama , Masatoshi Tsukichi , Yasunobu Inoue , Masasuke Takata
IPC分类号： C23C16/00
CPC分类号： C23C16/40 , C01G9/03 , C01P2002/72 , C23C16/407 , C23C16/448 , H01L21/0237 , H01L21/0242 , H01L21/02554 , H01L21/0262
摘要： A fabrication method for fabricating a metal oxide film introduces H2 gas and O2 gas or, H2O2 gas, into a catalytic reactor to make contact with a catalyst to generate H2O gas. The H2O gas that is generated is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit the metal oxide thin film on a substrate and fabricate the metal oxide thin film.
摘要翻译：用于制造金属氧化物膜的制造方法将H 2气体和O 2气体或H 2 O 2气体引入到催化反应器中以与催化剂接触以产生H 2 O气体。所产生的H 2 O气体从催化反应器喷射，与金属化合物气体反应，从而将金属氧化物薄膜沉积在基板上，并制造金属氧化物薄膜。

3. 发明申请

US20100203246A1 DEPOSITION METHOD AND DEPOSITION APPARATUS FOR NITRIDE FILM 审中-公开
标题翻译：硝酸盐膜沉积方法和沉积装置
公开(公告)号：US20100203246A1
公开(公告)日：2010-08-12
申请号：US12669575
申请日：2008-07-18
申请人： Kanji Yasui , Hiroshi Nishiyama , Kazuyuki Tamura , Yasunobu Inoue
发明人： Kanji Yasui , Hiroshi Nishiyama , Kazuyuki Tamura , Yasunobu Inoue
IPC分类号： C23C16/44 , C23C16/34 , C23C16/00
CPC分类号： C30B29/403 , C23C16/303 , C23C16/452 , C30B25/02 , H01L21/0237 , H01L21/0254 , H01L21/0262
摘要： A deposition method of depositing a nitride film, including steps of introducing one or more nitrogen supplying gas selected from hydrazine and nitrogen oxides into a catalyst reaction apparatus; enabling a reactive gas generated by contacting the nitrogen supplying gas with catalyst to be spouted out from the catalyst reaction apparatus; and reacting the reactive gas with a compound gas, thereby depositing a nitride film on a substrate is disclosed.
摘要翻译：一种沉积氮化膜的沉积方法，包括将一种或多种选自肼和氮氧化物的氮气供给气体引入催化剂反应装置中的步骤; 使得能够通过使氮供给气体与从催化剂反应装置喷出的催化剂接触而产生的反应性气体; 并且使反应性气体与复合气体反应，从而在衬底上沉积氮化物膜。

4. 发明申请

US20110247560A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20110247560A1
公开(公告)日：2011-10-13
申请号：US13130078
申请日：2009-11-19
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
IPC分类号： C23C16/448 , C23C16/458 , C23C16/455
CPC分类号： C23C16/44 , C23C16/407 , C23C16/45523 , H01L21/02181 , H01L21/02238 , H01L21/0228 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/31138 , H01L21/3141 , H01L21/31645 , H01L21/31662 , H01L21/321
摘要： A disclosed substrate processing apparatus comprises a reaction chamber; a substrate supporting portion that is provided in the reaction chamber and configured to support a substrate; and plural catalyst reaction portions that are arranged in the reaction chamber in order to oppose the substrate supporting portion, and configured to produce a reaction gas by allowing a source gas introduced from a gas introduction portion to contact a catalyst and to eject the reaction gas to an inner space of the reaction chamber, thereby processing the substrate supported by the substrate supporting portion with the ejected reaction gas.
摘要翻译：所公开的基板处理装置包括反应室; 基板支撑部，其设置在所述反应室中并且构造成支撑基板; 以及多个催化剂反应部分，其布置在反应室中以与基板支撑部分相对，并且被配置为通过使从气体引入部分引入的源气体接触催化剂并将反应气体喷射到反应室的内部空间，从而用喷射的反应气体处理由基板支撑部分支撑的基板。

5. 发明授权

US08574676B2 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US08574676B2
公开(公告)日：2013-11-05
申请号：US13130066
申请日：2009-11-19
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijima , Katsuhiko Iwabuchi
IPC分类号： C23C16/40
CPC分类号： C23C16/45523 , C23C16/407 , C23C16/44 , H01L21/02181 , H01L21/02233 , H01L21/0228 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/31138 , H01L21/3141 , H01L21/31645 , H01L21/31662 , H01L21/321
摘要： A substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.
摘要翻译：基板处理方法包括以下步骤：将基板布置在室中; 将第一流量的H 2气体和独立于H 2气体的第二流量的O 2气体引入到其中容纳催化剂的催化剂反应部分，其中喷出由H 2气体产生的H 2 O气体和与催化剂接触的O 2气体从催化剂反应部分向基板; 并且将引入到催化剂反应部的O 2气体的流量减少到低于第二流量的第三流量，其中引入H 2气体和O 2气体并降低O 2气体的流量的步骤以预定的重复频率以该顺序重复，从而处理基板。

6. 发明申请

US20110229637A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 失效
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20110229637A1
公开(公告)日：2011-09-22
申请号：US13130066
申请日：2009-11-19
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijma , Katsuhiko Iwabuchi
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Mitsuru Ushijma , Katsuhiko Iwabuchi
IPC分类号： C23C16/40
CPC分类号： C23C16/45523 , C23C16/407 , C23C16/44 , H01L21/02181 , H01L21/02233 , H01L21/0228 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/31138 , H01L21/3141 , H01L21/31645 , H01L21/31662 , H01L21/321
摘要： A disclosed substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.
摘要翻译：所公开的基板处理方法包括以下步骤：将基板布置在室中; 将第一流量的H 2气体和独立于H 2气体的第二流量的O 2气体引入到其中容纳催化剂的催化剂反应部分，其中喷出由H 2气体产生的H 2 O气体和与催化剂接触的O 2气体从催化剂反应部分向基板; 并且将引入到催化剂反应部的O 2气体的流量减少到低于第二流量的第三流量，其中引入H 2气体和O 2气体并降低O 2气体的流量的步骤以预定的重复频率以该顺序重复，从而处理基板。

7. 发明申请

US20100323108A1 DEPOSITION APPARATUS AND DEPOSITION METHOD 审中-公开
标题翻译：沉积装置和沉积方法
公开(公告)号：US20100323108A1
公开(公告)日：2010-12-23
申请号：US12864904
申请日：2008-11-21
申请人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Hitoshi Miura
发明人： Kanji Yasui , Hiroshi Nishiyama , Yasunobu Inoue , Hitoshi Miura
IPC分类号： C23C16/448 , C23C16/00
CPC分类号： C23C16/303 , C01G9/02 , C01G9/03 , C01G15/00 , C01P2002/72 , C01P2006/40 , C23C16/345 , C23C16/407 , C23C16/452 , H01L21/0242 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L21/0262
摘要： A disclosed deposition apparatus includes a catalyst reaction apparatus including an introduction part that introduces a first source gas, a catalyst container that contains a catalyst that produces reactive gas from the first source gas introduced from the introduction part, and a reactive gas ejection part that ejects the reactive gas from the catalyst container; a reactive gas separator that allows the reactive gas ejected from the reactive gas ejection part to go therethrough; a substrate supporting part that supports a substrate; and a supplying part that supplies a second source gas that reacts with the reactive gas that passes through the reactive gas separator, thereby depositing a film on the substrate.
摘要翻译：所公开的沉积装置包括：催化剂反应装置，其包括引入第一源气体的引入部分，包含从引入部分引入的第一源气体产生反应性气体的催化剂的催化剂容器;以及反应性气体喷出部件，来自催化剂容器的反应气体; 反应性气体分离器，其允许从反应性气体喷射部分喷射的反应气体通过; 支撑基板的基板支撑部; 以及供给部，其供给与通过反应性气体分离器的反应性气体反应的第二源气体，从而在基板上沉积膜。

8. 发明申请

US20090155187A1 DRUG FOR INHIBITING VASCULAR INTIMAL HYPERPLASIA 审中-公开
标题翻译：用于抑制血管紧张素血症的药物
公开(公告)号：US20090155187A1
公开(公告)日：2009-06-18
申请号：US12353646
申请日：2009-01-14
申请人： Hiroshi Nishiyama , Norimasa Shudo , Nobutomo Tsuruzoe
发明人： Hiroshi Nishiyama , Norimasa Shudo , Nobutomo Tsuruzoe
IPC分类号： A61K9/12 , A61K31/501
CPC分类号： A61K31/501 , C07D237/14
摘要： To provide an intimal hyperplasia inhibitor useful for prevention of restenosis after percutaneous transluminal coronary angioplasty (PTCA) or vascular stent placement or treatment of its progress.An intimal hyperplasia inhibitor containing a 3(2H)-pyridazinone compound represented by the formula (I): [wherein each of R1, R2 and R3 is independently a hydrogen atom or a C1-6 alkyl group, X is a halogen atom, cyano or a hydrogen atom, Y is a halogen atom, trifluoromethyl or a hydrogen atom, and A is a C1-8 alkylene which may be substituted with a hydroxyl group] or a pharmacologically acceptable salt thereof.
摘要翻译：提供内皮增生抑制剂，可用于预防经皮腔内冠状动脉成形术（PTCA）或血管支架置入或治疗其进展后的再狭窄。含有由式（I）表示的3（2H） - 哒嗪酮化合物的内膜增生抑制剂：其中R 1，R 2和R 3各自独立地为氢原子或C 1-6烷基，X为卤素原子，氰基或氢原子，Y为卤素原子，三氟甲基或氢原子，A为可被羟基取代的C 1-8亚烷基]或其药理学上可接受的盐。

9. 发明授权

US6040760A Center cluster module and system, and electrical equipment connector system 失效
标题翻译：中心集群模块和系统，以及电气设备连接器系统
公开(公告)号：US6040760A
公开(公告)日：2000-03-21
申请号：US66774
申请日：1998-04-27
申请人： Ichiro Kataoka , Kunimitsu Aoki , Yoshiyuki Furuya , Junichi Matsushita , Hiroshi Nishiyama , Katsutoshi Nakajima , Akira Norizuki , Katsumi Murakami , Takeyuki Amari
发明人： Ichiro Kataoka , Kunimitsu Aoki , Yoshiyuki Furuya , Junichi Matsushita , Hiroshi Nishiyama , Katsutoshi Nakajima , Akira Norizuki , Katsumi Murakami , Takeyuki Amari
IPC分类号： B60K37/00 , B60R11/00 , B60R11/02 , B60R16/02 , B60R16/03 , H01R24/00 , H05K5/02 , H05K7/14 , B60Q1/00
CPC分类号： B60R16/0315 , B60R11/02 , B60R2011/0007
摘要： Multiple pieces of equipment installed in a vehicle are freely installed and removed to equipment connection slots. A bus line interconnects the multiple pieces of electrical equipment installed in the equipment connection slots. Multiple operating switches arranged in a single unit on an operating section are provided in correspondence to the multiple pieces of electrical equipment for producing control signals to control each of the multiple pieces of electrical equipment. When any one of the operating switches is manipulated, a head unit controls, via the bus line, the electrical equipment corresponding to the manipulated operating switch.
摘要翻译：安装在车辆中的多件设备可自由安装并拆卸到设备连接槽。总线将安装在设备连接槽中的多个电气设备互连。设置在操作部分上的单个单元中的多个操作开关对应于多个电气设备，用于产生用于控制多个电气设备中的每一个的控制信号。当操作任何一个操作开关时，头部单元通过总线控制与被操纵的操作开关相对应的电气设备。

10. 发明授权

US4642677A Color TV camera with plural solid state imaging devices mutually horizontally displaced and associated filters of vertically-oriented color stripes 失效
标题翻译：具有相互水平位移的多个固态成像装置的彩色电视摄像机和垂直取向的彩色条纹的相关过滤器
公开(公告)号：US4642677A
公开(公告)日：1987-02-10
申请号：US632873
申请日：1984-07-20
申请人： Itsuo Takanashi , Tadayoshi Miyoshi , Shintaro Nakagaki , Hiroshi Nishiyama
发明人： Itsuo Takanashi , Tadayoshi Miyoshi , Shintaro Nakagaki , Hiroshi Nishiyama
IPC分类号： H04N9/04 , H04N9/09 , H04N9/097
CPC分类号： H04N9/045
摘要： In a color television camera, a light ray from an object to be taken is split into a plurality of rays to be respectively incident on two or more solid-state imaging devices each equipped with a color separation stripe filter where the imaging devices are positioned so that pixels thereof are horizontally shifted by a predetermined distance from pixels of remaining imaging devices with respect to an image applied thereto. The imaging devices are driven in a sequence, and output signals therefrom are sampled in a sequence so as to produce a single multi-color video signal by combining the plurality of sampled signal components. With this arrangement, the frequency of color signal components within the multi-color video signal is increased from the frequency of each of the output signals from the imaging device. The sampled signal components may be further sampled so that a plurality of color signals corresponding to the colors of the color stripe filters are obtained and their levels are respectively adjusted for obtaining level-adjusted color signal which are then combined to produce a single multi-color video signal.
摘要翻译：在彩色电视摄像机中，来自被摄体的光线被分割为多个光线，以分别入射到两个或更多个固态成像装置，每个固态成像装置都配备有成像装置所在的分色条纹滤光器其像素相对于施加到其上的图像水平偏移剩余成像装置的像素预定距离。成像装置按顺序驱动，其输出信号按顺序进行采样，以便通过组合多个采样信号分量来产生单个多色视频信号。利用这种布置，多色视频信号中的彩色信号分量的频率从成像装置的每个输出信号的频率增加。可以进一步采样采样的信号分量，使得获得与彩色条带滤波器的颜色相对应的多个颜色信号，并且分别调整它们的电平以获得电平调整的颜色信号，然后将其组合以产生单个多色视频信号。

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