会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method for forming fine patterns in a semiconductor device
    • 在半导体器件中形成精细图案的方法
    • US5476807A
    • 1995-12-19
    • US227534
    • 1994-04-14
    • Kang-hyun LeeJong-seo HongHyoung-sub KimJae-ho KimMin-seog Han
    • Kang-hyun LeeJong-seo HongHyoung-sub KimJae-ho KimMin-seog Han
    • H01L21/302H01L21/02H01L21/033H01L21/3065H01L21/8242H01L21/00
    • H01L27/10852H01L21/0337H01L28/88
    • A method for forming a fine pattern, e.g., for forming the storage electrodes of the capacitors of the memory cells of semiconductor memory devices, which includes the steps of depositing a mask layer on the layer to be patterned, depositing a photoresist layer on the mask layer, patterning the photoresist layer, to thereby form a photoresist pattern, anisotropically etching the mask layer, using the photoresist pattern as an etching mask, to thereby form a mask layer pattern, wherein etch by-products are formed on sidewalls of a composite layer comprised of the photoresist pattern and the mask layer pattern, and, etching the layer to be patterned using the composite layer and the etch by-products as an etching mask, to thereby form a fine pattern. The mask layer is made of a material, e.g., a high-temperature oxide, having different physical properties than that of the photoresist. Further, the anisotropic etching process is preferably carried out by means of a plasma etching process using a mixture of CF.sub.4, CHF.sub.4, and Ar gases, with the amount of the etch by-products being controllably adjusted by the ratio of these gases, and/or by controllably adjusting the time, temperature, and/or pressure parameters of this anisotropic etching process.
    • 一种用于形成精细图案的方法,例如,用于形成半导体存储器件的存储单元的电容器的存储电极,其包括以下步骤:在待图案化的层上沉积掩模层;在掩模上沉积光致抗蚀剂层 层,图案化光致抗蚀剂层,从而形成光致抗蚀剂图案,使用光致抗蚀剂图案作为蚀刻掩模,各向异性地蚀刻掩模层,从而形成掩模层图案,其中在复合层的侧壁上形成蚀刻副产物 由光致抗蚀剂图案和掩模层图案组成,并且使用复合层蚀刻待图案化层和蚀刻副产物作为蚀刻掩模,从而形成精细图案。 掩模层由具有与光致抗蚀剂不同的物理性质的材料,例如高温氧化物制成。 此外,各向异性蚀刻工艺优选通过使用CF 4,CHF 4和Ar气体的混合物的等离子体蚀刻工艺进行,其中蚀刻副产物的量可由这些气体的比例可控地调节,和/ 或通过可控地调节该各向异性蚀刻工艺的时间,温度和/或压力参数。
    • 6. 发明申请
    • Image forming apparatus and method
    • 图像形成装置及方法
    • US20060061792A1
    • 2006-03-23
    • US11221757
    • 2005-09-09
    • Jae-ho KimHyuck Kim
    • Jae-ho KimHyuck Kim
    • G06F3/12
    • G06F3/1211G06F3/1204G06F3/1245G06F3/1284G06F3/1285
    • An image forming apparatus having a file-format conversion function and a method thereof. The image forming apparatus is capable of performing a data communication with an external memory device. The image forming apparatus includes an interface unit to receive a first file from the external memory device and to transmit a second file to the external memory device, and a file converter to convert a format of the first file from a first format into a second format according to information on the first and second files. Thus, the format of the received file can be converted in the image forming apparatus in a simple and speed way.
    • 一种具有文件格式转换功能的图像形成装置及其方法。 图像形成装置能够执行与外部存储装置的数据通信。 图像形成装置包括:接口单元,用于从外部存储装置接收第一文件,并将第二文件发送到外部存储装置;以及文件转换器,用于将第一文件的格式从第一格式转换为第二格式 根据第一和第二个文件的信息。 因此,可以以简单且快速的方式在图像形成装置中转换接收的文件的格式。