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1. 发明授权

US09143686B2 Photographing apparatus, motion estimating apparatus, image compensating method, motion estimating method, and computer-readable recording medium 有权
标题翻译：拍摄装置，运动估计装置，图像补偿方法，运动估计方法和计算机可读记录介质
公开(公告)号：US09143686B2
公开(公告)日：2015-09-22
申请号：US13618153
申请日：2012-09-14
申请人： Yun-gu Lee , Hong-jun Choi , Chang-woo Lee , Jae-ho Kim
发明人： Yun-gu Lee , Hong-jun Choi , Chang-woo Lee , Jae-ho Kim
IPC分类号： H04N5/232
CPC分类号： H04N5/23254 , H04N5/23248 , H04N5/23267 , H04N5/2329 , H04N5/3532
摘要： A photographing apparatus, a motion estimating apparatus, an image compensating method, a motion estimating method, and a non-transitory computer-readable recording medium are provided. The photographing apparatus includes: an image sensing unit which continuously captures a plurality of images by using a rolling shutter method; and an image processor which compensates for a uniformly accelerated motion of the photographing apparatus by using the plurality of images.
摘要翻译：提供了拍摄装置，运动估计装置，图像补偿方法，运动估计方法和非暂时计算机可读记录介质。拍摄装置包括：图像感测单元，其通过使用滚动快门方法连续地捕获多个图像; 以及图像处理器，其通过使用所述多个图像来补偿所述拍摄装置的均匀加速的运动。

2. 发明授权

US07615446B2 Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof 有权
标题翻译：电荷阱闪存器件及其制造方法及其读/写操作控制方法
公开(公告)号：US07615446B2
公开(公告)日：2009-11-10
申请号：US11580102
申请日：2006-10-13
申请人： Tae-whan Kim , Young-ho Kim , Jae-ho Kim , Jea-hun Jung , Chong-seung Yoon
发明人： Tae-whan Kim , Young-ho Kim , Jae-ho Kim , Jea-hun Jung , Chong-seung Yoon
IPC分类号： H01L21/336
CPC分类号： H01L29/42332 , B82Y10/00 , H01L29/7887
摘要： In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.
摘要翻译：一方面，提供了一种电荷阱闪存器件，其包括半导体衬底，在半导体衬底的有源区域中间隔开的源极和漏极区域，以在其间限定沟道区域，位于沟道区域上的隧道电介质层位于隧道电介质层上的有机聚合物薄膜，嵌入有机聚合物薄膜中的金属或金属氧化物纳米晶体，以及位于有机聚合物薄膜上的栅极。

3. 发明申请

US20060126140A1 Device to edit documents for printout and method thereof 有权
公开(公告)号：US20060126140A1
公开(公告)日：2006-06-15
申请号：US11283878
申请日：2005-11-22
申请人： Hyun-sub Kil , Jae-ho Kim
发明人： Hyun-sub Kil , Jae-ho Kim
IPC分类号： H04N1/46
CPC分类号： H04N1/387 , G06F3/1222 , G06F3/1238 , G06F3/1247 , G06F3/1288 , H04N1/00416 , H04N1/00442 , H04N1/0045 , H04N1/00453 , H04N1/00456 , H04N1/00461 , H04N1/00482 , H04N1/00957 , H04N1/4413 , H04N1/444
摘要： A device and method of editing documents created in different application programs and stored in a storage unit of a printer to create a new document according to a minimum unit.

4. 发明申请

US20090323118A1 DEVICE TO EDIT DOCUMENTS FOR PRINTOUT AND METHOD THEREOF 有权
标题翻译：编辑打印文件的设备及其方法
公开(公告)号：US20090323118A1
公开(公告)日：2009-12-31
申请号：US12555996
申请日：2009-09-09
申请人： Hyun-sub Kil , Jae-ho Kim
发明人： Hyun-sub Kil , Jae-ho Kim
IPC分类号： G06F15/00
CPC分类号： H04N1/387 , G06F3/1222 , G06F3/1238 , G06F3/1247 , G06F3/1288 , H04N1/00416 , H04N1/00442 , H04N1/0045 , H04N1/00453 , H04N1/00456 , H04N1/00461 , H04N1/00482 , H04N1/00957 , H04N1/4413 , H04N1/444
摘要： A device and method of editing documents created in different application programs and stored in a storage unit of a printer to create a new document according to a minimum unit.
摘要翻译：编辑在不同应用程序中创建并存储在打印机的存储单元中的文档的装置和方法，以根据最小单位创建新文档。

5. 发明申请

US20070102750A1 Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof 有权
标题翻译：电荷阱闪存器件及其制造方法及其读/写操作控制方法
公开(公告)号：US20070102750A1
公开(公告)日：2007-05-10
申请号：US11580102
申请日：2006-10-13
申请人： Tae-whan Kim , Young-ho Kim , Jae-ho Kim , Jea-hun Jung , Chong-seung Yoon
发明人： Tae-whan Kim , Young-ho Kim , Jae-ho Kim , Jea-hun Jung , Chong-seung Yoon
IPC分类号： H01L29/76
CPC分类号： H01L29/42332 , B82Y10/00 , H01L29/7887
摘要： In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.
摘要翻译：一方面，提供了一种电荷阱闪存器件，其包括半导体衬底，在半导体衬底的有源区域中间隔开的源极和漏极区域，以在其间限定沟道区域，位于沟道区域上的隧道电介质层位于隧道电介质层上的有机聚合物薄膜，嵌入有机聚合物薄膜中的金属或金属氧化物纳米晶体，以及位于有机聚合物薄膜上的栅极。

6. 发明申请

US20060061792A1 Image forming apparatus and method 有权
标题翻译：图像形成装置及方法
公开(公告)号：US20060061792A1
公开(公告)日：2006-03-23
申请号：US11221757
申请日：2005-09-09
申请人： Jae-ho Kim , Hyuck Kim
发明人： Jae-ho Kim , Hyuck Kim
IPC分类号： G06F3/12
CPC分类号： G06F3/1211 , G06F3/1204 , G06F3/1245 , G06F3/1284 , G06F3/1285
摘要： An image forming apparatus having a file-format conversion function and a method thereof. The image forming apparatus is capable of performing a data communication with an external memory device. The image forming apparatus includes an interface unit to receive a first file from the external memory device and to transmit a second file to the external memory device, and a file converter to convert a format of the first file from a first format into a second format according to information on the first and second files. Thus, the format of the received file can be converted in the image forming apparatus in a simple and speed way.
摘要翻译：一种具有文件格式转换功能的图像形成装置及其方法。图像形成装置能够执行与外部存储装置的数据通信。图像形成装置包括：接口单元，用于从外部存储装置接收第一文件，并将第二文件发送到外部存储装置;以及文件转换器，用于将第一文件的格式从第一格式转换为第二格式根据第一和第二个文件的信息。因此，可以以简单且快速的方式在图像形成装置中转换接收的文件的格式。

7. 发明申请

US20130040448A1 METHODS OF FORMING METAL OR METAL NITRIDE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：形成金属或金属氮化物图案的方法和制造半导体器件的方法
公开(公告)号：US20130040448A1
公开(公告)日：2013-02-14
申请号：US13570812
申请日：2012-08-09
申请人： Joo-Hyung Yang , Yool Kang , Hyung-Rae Lee , Kyu-Sik Shin , Jae-ho Kim , Dong-Jun Lee
发明人： Joo-Hyung Yang , Yool Kang , Hyung-Rae Lee , Kyu-Sik Shin , Jae-ho Kim , Dong-Jun Lee
IPC分类号： H01L21/312 , H01L21/336
CPC分类号： H01L21/28123 , H01L21/0273 , H01L21/32139 , H01L21/76838
摘要： In a method of forming a metal or metal nitride pattern, a metal or metal nitride layer is formed on a substrate, and a photoresist pattern is formed on the metal or metal nitride layer. An over-coating composition is coated on the metal or metal nitride layer and on the photoresist pattern to form a capping layer on the photoresist pattern. The over-coating composition includes a polymer having amine groups as a side chain or a branch and a solvent. A remaining portion of the over-coating composition is removed by washing with a hydrophilic solution. The metal or metal nitride layer is partially removed using the capping layer and the photoresist pattern as an etching mask.
摘要翻译：在形成金属或金属氮化物图形的方法中，在基板上形成金属或金属氮化物层，并且在金属或金属氮化物层上形成光刻胶图案。在金属或金属氮化物层和光致抗蚀剂图案上涂覆过涂层组合物以在光致抗蚀剂图案上形成覆盖层。该覆盖组合物包括具有侧基或分支和溶剂的胺基的聚合物。通过用亲水溶液洗涤除去剩余部分的外涂层组合物。使用覆盖层和光致抗蚀剂图案作为蚀刻掩模来部分去除金属或金属氮化物层。

8. 发明授权

US08300245B2 Device to edit documents for printout and method thereof 有权
公开(公告)号：US08300245B2
公开(公告)日：2012-10-30
申请号：US11283878
申请日：2005-11-22
申请人： Hyun-sub Kil , Jae-ho Kim
发明人： Hyun-sub Kil , Jae-ho Kim
IPC分类号： G06F3/12
CPC分类号： H04N1/387 , G06F3/1222 , G06F3/1238 , G06F3/1247 , G06F3/1288 , H04N1/00416 , H04N1/00442 , H04N1/0045 , H04N1/00453 , H04N1/00456 , H04N1/00461 , H04N1/00482 , H04N1/00957 , H04N1/4413 , H04N1/444
摘要： A device and method of editing documents created in different application programs and stored in a storage unit of a printer to create a new document according to a minimum unit.

9. 发明申请

US20120127502A1 Method of performing operations in image forming apparatus, image forming apparatus and image forming system for performing the method 审中-公开
标题翻译：在用于执行该方法的图像形成装置，图像形成装置和图像形成系统中执行操作的方法
公开(公告)号：US20120127502A1
公开(公告)日：2012-05-24
申请号：US13317247
申请日：2011-10-13
申请人： Jae-ho Kim , Jin-ah Heo
发明人： Jae-ho Kim , Jin-ah Heo
IPC分类号： G06F15/00
CPC分类号： H04N1/00233 , H04N1/0023 , H04N2201/0094
摘要： A method of performing operations in an image forming apparatus, the image forming apparatus and an image forming system for performing the method. The method includes: determining whether a user selects an input button for performing a predetermined operation on image data obtained by capturing from a host device connected to the image forming apparatus; if it is determined that the input button is selected, determining a current operation mode of the image forming apparatus from among the plurality of operation modes; and performing an operation, which was previously set in correspondence to the operation mode, on the image data, according to a result of the determining.
摘要翻译：一种在图像形成装置，图像形成装置和用于执行该方法的图像形成系统中执行操作的方法。该方法包括：确定用户是否从连接到图像形成设备的主机设备中获取的图像数据上选择用于执行预定操作的输入按钮; 如果确定选择了输入按钮，则从多个操作模式中确定图像形成装置的当前操作模式; 并且根据确定的结果对图像数据执行与操作模式相对应的先前设置的操作。

10. 发明申请

US20120064724A1 Methods of Forming a Pattern of Semiconductor Devices 审中-公开
标题翻译：形成半导体器件图案的方法
公开(公告)号：US20120064724A1
公开(公告)日：2012-03-15
申请号：US13222447
申请日：2011-08-31
申请人： Bo-hee Lee , Kyoung-mi Kim , Jeong-ju Park , Mi-ra Park , Jae-ho Kim , Young-ho Kim
发明人： Bo-hee Lee , Kyoung-mi Kim , Jeong-ju Park , Mi-ra Park , Jae-ho Kim , Young-ho Kim
IPC分类号： H01L21/308
CPC分类号： H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： Methods of forming a pattern of a semiconductor device including performing a double patterning process without using an atomic layer deposition (ALD) oxide film are provided. The methods may include forming a mask pattern on a substrate; forming a chemical attach process (CAP) material layer covering at least a portion of the mask pattern; forming a CAP adhesive layer by adhering at least a portion of the CAP material layer to the mask pattern by using a first baking process and a first development process; forming an interlayer covering at least a portion of the mask pattern and the CAP adhesive layer; and removing the mask pattern and the interlayer while allowing the CAP adhesive layer to remain by using a second baking process and a second development process.
摘要翻译：提供了形成半导体器件的图案的方法，包括不使用原子层沉积（ALD）氧化物膜来执行双重图案化工艺。所述方法可以包括在衬底上形成掩模图案; 形成覆盖所述掩模图案的至少一部分的化学附着工艺（CAP）材料层; 通过使用第一烘烤处理和第一显影处理将CAP材料层的至少一部分粘附到掩模图案上形成CAP粘合剂层; 形成覆盖所述掩模图案和所述CAP粘合剂层的至少一部分的中间层; 以及通过使用第二烘烤处理和第二显影处理使CAP粘合剂层保持不动，从而去除掩模图案和中间层。

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