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1. 发明授权

US5880012A Method for making semiconductor nanometer-scale wire using an atomic force microscope 失效
标题翻译：使用原子力显微镜制造半导体纳米级线的方法
公开(公告)号：US5880012A
公开(公告)日：1999-03-09
申请号：US842868
申请日：1997-07-17
申请人： Jeong-Sook Ha , Kang-Ho Park
发明人： Jeong-Sook Ha , Kang-Ho Park
IPC分类号： H01L21/70 , G01Q60/00 , G01Q80/00 , G01Q90/00 , H01L21/20
CPC分类号： B82Y15/00 , H01L21/02381 , H01L21/02532 , H01L21/02639 , Y10S438/962 , Y10S977/856
摘要： The present invention provides a method for making semiconductor nanometer-scale wire. The method comprises the steps of: forming a nitride film on a semiconductor substrate by implanting a nitrogen ions at a high temperature; forming a nitride film pattern with several nanometer line width and spaced by several nanometer therebetween by using an Atomic Force Microscope; forming a silicon oxide film by selectively thermal-oxidizing an exposed portion of the semiconductor substrate; removing the nitride film pattern by using the Atomic Force Microscope; forming a semiconductor layer by using Molecular Beam Epitaxy method on the surface of the silicon oxide film and on the surface of the semiconductor substrate exposed by removing the nitride film pattern; and selectively removing the silicon oxide film and the semiconductor layer on the surface of the silicon oxide film through thermal treatment.
摘要翻译：本发明提供一种制造半导体纳米级线的方法。该方法包括以下步骤：通过在高温下注入氮离子在半导体衬底上形成氮化物膜; 通过使用原子力显微镜形成几纳米线宽并间隔几纳米的氮化物膜图案; 通过选择性地热氧化半导体衬底的暴露部分来形成氧化硅膜; 通过使用原子力显微镜去除氮化物膜图案; 通过使用分子束外延法在氧化硅膜的表面和通过去除氮化物膜图案而暴露的半导体衬底的表面上形成半导体层; 并且通过热处理选择性地去除氧化硅膜表面上的氧化硅膜和半导体层。

2. 发明授权

US5710051A Method for manufacturing a single electron transistor by using a scanning tunneling microscopy 失效
标题翻译：使用扫描隧道显微镜制造单电子晶体管的方法
公开(公告)号：US5710051A
公开(公告)日：1998-01-20
申请号：US694316
申请日：1996-08-08
申请人： Kang-Ho Park , Jeong-Sook Ha , El-Hang Lee
发明人： Kang-Ho Park , Jeong-Sook Ha , El-Hang Lee
IPC分类号： H01L29/772 , B82B3/00 , G01Q60/10 , G01Q70/14 , H01L21/3205 , H01L21/335 , H01L29/76 , H01L49/00 , H01L21/00
CPC分类号： H01L49/006 , B82Y10/00 , H01L21/32051 , H01L29/66439 , H01L29/7613 , Y10S977/851 , Y10S977/855 , Y10S977/861 , Y10S977/875 , Y10S977/937
摘要： A method for the manufacture of a single electron transistor (SET) in a vacuum state, wherein the SET operates in room temperature, comprises the steps of: approaching an Au tip of a scanning tunneling microscopy (STM) on top of a silicon-substrate having a silicon oxide layer on top thereof to maintain a distance from top of the oxide layer to end of the Au tip of the STM; forming an Au cluster on top of the oxide layer by using a low field evaporation method employing the STM, thereby forming a two dimensional island structure on top of the oxide layer, wherein the low field evaporation method employing the STM generates an electronic pulse between top of the oxide layer and end of the Au tip of the STM by applying a voltage to the Au tip of the STM; forming a source and a drain to both sides of the Au cluster in the two dimensional island structure, respectively, in such a way that the Au cluster in the two dimensional island structure maintains a gap with the source and the drain, thereby forming an electron tunneling barrier on right and left of the Au cluster in the two dimensional island structure; and joining a gate on bottom of the silicon-substrate.
摘要翻译：一种用于在真空状态下制造单电子晶体管（SET）的方法，其中SET在室温下工作，包括以下步骤：在硅衬底顶部接近扫描隧道显微镜（STM）的Au尖端在其顶部具有氧化硅层以保持从氧化物顶部到STM的Au尖端的距离; 通过使用采用STM的低场蒸发法在氧化物层的顶部上形成Au簇，从而在氧化物层的顶部形成二维岛状结构，其中采用STM的低场蒸发方法在顶部产生电子脉冲通过向STM的Au尖端施加电压而使STM的氧化物层和Au尖端的端部; 在二维岛结构中分别在Au簇的两侧形成源极和漏极，使得二维岛状结构中的Au簇与源极和漏极保持间隙，从而形成电子 Au簇在二维岛结构左右的隧道势垒; 并且在硅衬底的底部连接栅极。

3. 发明授权

US5961741A Metal semiconductor optical device 失效
标题翻译：金属半导体光学器件
公开(公告)号：US5961741A
公开(公告)日：1999-10-05
申请号：US842867
申请日：1997-04-17
申请人： Kang-Ho Park , Jeong-Sook Ha
发明人： Kang-Ho Park , Jeong-Sook Ha
IPC分类号： H01L31/04 , H01L31/07 , H01L31/108 , H01L31/06 , H01L27/095
CPC分类号： H01L31/07 , H01L31/108 , Y02E10/50
摘要： The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energy state occurring between the metal thin film and the semiconductor, to thereby enhance the optical absorption efficiency of light beam. The interface single atomic layer is formed by one of the group V elements, e.g., one of antimony(Sb) or arsenic(As). Additionally, the metal thin film has a thickness of approximately 30 .ANG..
摘要翻译：本发明提供一种金属半导体光学元件，其能够使用作为界面活性剂的层在半导体基板上薄均匀地生长金属膜，并且降低了在金属薄膜和半导体之间发生的界面能态的密度，从而提高光束的光吸收效率。界面单原子层由V族元素之一形成，例如锑（Sb）或砷（As）之一。另外，金属薄膜的厚度约为30。

4. 发明授权

US5780851A Method of forming a diamond on the pointed tip 失效
标题翻译：在尖头上形成金刚石的方法
公开(公告)号：US5780851A
公开(公告)日：1998-07-14
申请号：US903796
申请日：1997-07-31
申请人： Jeong-Sook Ha , Wan-Soo Yun , Kang-Ho Park
发明人： Jeong-Sook Ha , Wan-Soo Yun , Kang-Ho Park
IPC分类号： C03B29/04 , C23C16/04 , C23C16/27 , G01Q60/16 , G01Q70/14 , H01J9/02 , H01J37/26
CPC分类号： G01Q60/16 , B82Y35/00 , C23C16/04 , C23C16/271 , G01Q70/14 , H01J9/025
摘要： The present invention provides a method for forming a diamond selectively on the topmost part of a pointed tip by applying negative bias to the tip in a chemical vapor deposition system. High temperature tungsten filament is placed above the sharp tip, which is biased negatively to induce selective nucleation and growth of diamond on the topmost part of it.
摘要翻译：本发明提供了一种通过在化学气相沉积系统中向尖端施加负偏压来在尖端的最上部选择性地形成金刚石的方法。将高温钨丝放置在锋利的尖端上方，其被负偏压以诱导金刚石在其最高部分上的选择性成核和生长。

5. 发明授权

US5500047A Apparatus for adsorbing atomic hydrogen on surface 失效
标题翻译：用于在表面吸附原子氢的装置
公开(公告)号：US5500047A
公开(公告)日：1996-03-19
申请号：US354037
申请日：1994-12-06
申请人： Kang-Ho Park , Jeong-Sook Ha , Seong-Ju Park , El-Hang Lee
发明人： Kang-Ho Park , Jeong-Sook Ha , Seong-Ju Park , El-Hang Lee
IPC分类号： H01L21/203 , C01B3/00 , C23C16/00 , C23C16/452 , G21K5/00
CPC分类号： C01B3/0094 , C23C16/452 , Y02E60/327
摘要： A surface adsorption apparatus for dissociating H.sub.2 molecules into atomic hydrogen in a vacuum vessel and adsorbing the atomic hydrogen on a sample surface is disclosed. A vacuum tube is mounted in the vacuum vessel. A nozzle is connected to the vacuum tube having a plurality of bent portions. A heating member receives electrical power from a power supply source and heats the nozzle to a predetermined temperature. A heat shielding member is located in a path of the atomic hydrogen between one end of the nozzle and the sample surface for shielding the sample surface from heat radiating from the nozzle. The H.sub.2 molecules collide with inner wall surfaces of the bent portions to be readily dissociate into the atomic hydrogen. The atomic dissociated hydrogen propagates toward the sample surface and is adsorbed on the sample surface. Since the nozzle comprises bent portions, H.sub.2 molecules frequently collide with inner wall surfaces of the nozzle to readily dissociate into atomic hydrogen. The H.sub.2 collision efficiency is significantly improved by increased surface collisions with the bent portions. Because the bent portions of the nozzle are heated by the heating member, the construction of the apparatus is simplified.
摘要翻译：公开了一种用于在真空容器中将H 2分子解离成原子氢并将样品表面上的氢原子吸附的表面吸附装置。真空管安装在真空容器中。喷嘴连接到具有多个弯曲部分的真空管。加热构件从电源接收电力并将喷嘴加热至预定温度。热屏蔽构件位于喷嘴的一端和样品表面之间的原子氢的路径中，用于屏蔽样品表面免受从喷嘴辐射的热。 H2分子与弯曲部分的内壁表面碰撞，容易解离成原子氢。原子解离的氢向样品表面传播并吸附在样品表面上。由于喷嘴包括弯曲部分，所以H2分子经常与喷嘴的内壁表面碰撞以容易地解离成原子氢。通过增加与弯曲部分的表面碰撞，H2碰撞效率显着提高。由于喷嘴的弯曲部分被加热部件加热，因此简化了装置的结构。

6. 发明授权

US07875320B2 Method for producing film of vanadium pentoxide nanowires having improved alignment and vanadium pentoxide nanowire film produced thereby 有权
标题翻译：制造具有改进的取向的五氧化二钒纳米线的薄膜的方法和由此制备的五氧化二钒纳米线膜
公开(公告)号：US07875320B2
公开(公告)日：2011-01-25
申请号：US12029596
申请日：2008-02-12
申请人： Jae-Hyun Park , Jeong-Sook Ha , Yong-Kwan Kim
发明人： Jae-Hyun Park , Jeong-Sook Ha , Yong-Kwan Kim
IPC分类号： B05D1/18
CPC分类号： B05D1/18 , B05D1/202 , B05D1/204 , B82Y30/00 , B82Y40/00 , C01G31/02 , C01P2004/16 , H01M4/485 , Y10S977/89 , Y10S977/892
摘要： A method for producing a film of vanadium pentoxide nanowires having improved alignment is provided. The method comprises the steps of a) preparing a solution of vanadium pentoxide (V2O5) nanowires by a sol-gel method; b) diluting the solution of vanadium pentoxide nanowires with water and feeding the dilute aqueous solution into a Langmuir-Blodgett trough; c) adding a dispersant to the dilute aqueous solution of vanadium pentoxide nanowires; d) diluting a solution of a dioctadecyldimethylammonium halide with an organic solvent, applying the dioctadecyldimethylammonium halide solution to the surface of the dilute aqueous solution of vanadium pentoxide nanowires in the Langmuir-Blodgett trough, and allowing the solutions to stand to disperse the dioctadecyldimethylammonium halide solution in the Langmuir-Blodgett trough; e) controlling the surface pressure of the dioctadecyldimethylammonium halide solution using barriers mounted on the Langmuir-Blodgett trough; f) affixing a substrate to a dipping arm of the Langmuir-Blodgett trough and bringing the substrate into contact with the surface of the dioctadecyldimethylammonium halide solution; and g) separating the substrate from the dipping arm.
摘要翻译：提供了具有改进的取向的五氧化二钒纳米线膜的制造方法。该方法包括以下步骤：a）通过溶胶 - 凝胶法制备五氧化二钒（V2O5）纳米线溶液; b）用水稀释五氧化二钒纳米线溶液，并将稀水溶液加入Langmuir-Blodgett槽中; c）向五氧化二钒纳米线的稀水溶液中加入分散剂; d）用有机溶剂稀释二十八烷基二甲基卤化铵的溶液，在Langmuir-Blodgett槽中将二十八烷基二甲基卤化铵溶液施加到五氧化二钒纳米线的稀水溶液的表面，并使溶液静置以分散二十八烷基二甲基卤化铵溶液在Langmuir-Blodgett槽中; e）使用安装在Langmuir-Blodgett槽上的屏障控制二十八烷基二甲基卤化铵溶液的表面压力; f）将衬底固定在Langmuir-Blodgett槽的浸渍臂上，使衬底与二十八烷基二甲基卤化铵溶液的表面接触; 并且g）将基底与浸渍臂分离。

7. 发明申请

US20090162272A1 METHOD FOR PRODUCING FILM OF VANADIUM PENTOXIDE NANOWIRES HAVING IMPROVED ALIGNMENT AND VANADIUM PENTOXIDE NANOWIRE FILM PRODUCED THEREBY 有权
公开(公告)号：US20090162272A1
公开(公告)日：2009-06-25
申请号：US12029596
申请日：2008-02-12
申请人： Jae-Hyun Park , Jeong-Sook Ha , Yong-Kwan Kim
发明人： Jae-Hyun Park , Jeong-Sook Ha , Yong-Kwan Kim
IPC分类号： B05D1/20 , C01G31/02 , B05D3/02
CPC分类号： B05D1/18 , B05D1/202 , B05D1/204 , B82Y30/00 , B82Y40/00 , C01G31/02 , C01P2004/16 , H01M4/485 , Y10S977/89 , Y10S977/892
摘要： A method for producing a film of vanadium pentoxide nanowires having improved alignment is provided. The method comprises the steps of a) preparing a solution of vanadium pentoxide (V2O5) nanowires by a sol-gel method; b) diluting the solution of vanadium pentoxide nanowires with water and feeding the dilute aqueous solution into a Langmuir-Blodgett trough; c) adding a dispersant to the dilute aqueous solution of vanadium pentoxide nanowires; d) diluting a solution of a dioctadecyldimethylammonium halide with an organic solvent, applying the dioctadecyldimethylammonium halide solution to the surface of the dilute aqueous solution of vanadium pentoxide nanowires in the Langmuir-Blodgett trough, and allowing the solutions to stand to disperse the dioctadecyldimethylammonium halide solution in the Langmuir-Blodgett trough; e) controlling the surface pressure of the dioctadecyldimethylammonium halide solution using barriers mounted on the Langmuir-Blodgett trough; f) affixing a substrate to a dipping arm of the Langmuir-Blodgett trough and bringing the substrate into contact with the surface of the dioctadecyldimethylammonium halide solution; and g) separating the substrate from the dipping arm. According to the method, the alignment of the nanowires can be markedly improved by sol-gel synthesis, the need for subsequent washing can be eliminated, which contributes to the simplification of the production process, and the nanowires can be cut to desired lengths in a simple manner, thereby ensuring the reproducibility of a device using the nanowire film and achieving improved characteristics of the device. Further provided are a vanadium pentoxide nanowire film produced by the method and a nanowire device comprising the nanowire film. The nanowire device can find application in various fields, including field effect transistors and a variety of sensors, due to its excellent characteristics and reproducibility.

8. 发明授权

US06489587B2 Fabrication method of erbium-doped silicon nano-size dots 失效
标题翻译：掺铒硅纳米尺寸点的制作方法
公开(公告)号：US06489587B2
公开(公告)日：2002-12-03
申请号：US09752671
申请日：2000-12-28
申请人： Jeong-Sook Ha , Kyoung-Wan Park , Seung-Min Park , Young-Jo Ko
发明人： Jeong-Sook Ha , Kyoung-Wan Park , Seung-Min Park , Young-Jo Ko
IPC分类号： B23K2600
CPC分类号： C23C14/0652 , C23C14/28 , C30B23/002 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02581 , H01L21/0259 , H01L21/02631 , H01L21/02667 , H01L21/30604 , H01L21/3081 , H01L21/3086 , H01L21/31116 , H01L29/167
摘要： An apparatus for fabricating silicon thin films for use in laser ablation includes a silicon substrate rotatably mounted in a process chamber maintaining a ultra high vacuum, pulsed light source means mounted outside the process chamber for emitting a pulsed light beam, target rotating means mounted in the process chamber for rotating a plurality of targets mounted therein, the targets being made of a different material, light beam splitting means for splitting the pulsed light beam into double light beams of the same intensity, light beam intensity regulating means for regulating the intensity of the double light beams, wherein the targets are mounted to face the silicon substrate so as to uniformly overlap the vaporization products of the targets generated by irradiating the double light bears on the silicon substrate.
摘要翻译：用于制造用于激光烧蚀的硅薄膜的装置包括可旋转地安装在保持超高真空的处理室中的硅衬底，安装在处理室外部用于发射脉冲光束的脉冲光源装置，安装在处理室，用于旋转安装在其中的多个目标，所述目标由不同的材料制成;光束分离装置，用于将脉冲光束分成具有相同强度的双光束;光束强度调节装置，用于调节双光束，其中靶被安装成面对硅衬底，以便均匀地重叠通过在硅衬底上照射双光轴产生的靶的汽化产物。

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