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1. 发明授权

US6033972A Growing method of GaAs quantum dots using chemical beam epitaxy 有权
标题翻译：使用化学束外延的GaAs量子点的生长方法
公开(公告)号：US6033972A
公开(公告)日：2000-03-07
申请号：US135124
申请日：1998-08-17
申请人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
发明人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
IPC分类号： H01L21/20 , H01L21/205 , H01L21/208
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02502 , H01L21/02546 , H01L21/0262 , H01L21/02631 , Y10S438/962
摘要： The formation of self-assembled GaAs quantum dots on (100) GaAs via chemical beam epitaxy (CBE) technique using triethylgallium (TEGa) and arsine (AsH.sub.3) is disclosed. GaAs quantum dots are easy to grow from Ga-droplets which are successively supplied with arsine with neither pattern definition nor pre-treatment steps prior to the growth. The density and the size of Ga-droplets are found to be sensitive to the growth conditions, such as the growth temperature, the beam equivalent pressure of TEGa, and the amount of TEGa supplied. This invention suggests that, unlike Stranski-Krastanow growth, the Ga-droplet-induced CBE technique can be a useful method for the fabrication of quantum dot structure by simple change of gas supply mode, even in lattice-matched system.
摘要翻译：公开了通过使用三乙基镓（TEGa）和胂（AsH 3）的化学束外延（CBE）技术在（100）GaAs上自组装GaAs量子点的形成。 GaAs量子点容易从Ga液滴中生长，其连续地供应胂，既没有图案定义也没有在生长之前的预处理步骤。发现Ga液滴的密度和尺寸对生长条件如生长温度，TEGa的束当量压力和所提供的TEGa的量是敏感的。本发明表明，与Stranski-Krastanow生长不同，Ga液滴诱导的CBE技术可以通过气体供应模式的简单改变来制造量子点结构的有用方法，即使在晶格匹配系统中也是如此。

2. 发明授权

US5751468A Vertical modulator with dual mode DBR 失效
标题翻译：双模式DBR垂直调制器
公开(公告)号：US5751468A
公开(公告)日：1998-05-12
申请号：US717127
申请日：1996-09-20
申请人： Kyung-Sook Hyun , O-Kyun Kwon , Kwang-Joon Kim , El-Hang Lee
发明人： Kyung-Sook Hyun , O-Kyun Kwon , Kwang-Joon Kim , El-Hang Lee
IPC分类号： G02B26/00 , G02F1/017 , G02F1/09
CPC分类号： B82Y20/00 , G02F1/017 , G02F2201/346
摘要： A vertical modulator with a dual mode distributed Bragg reflection (DBR), includes a pair of integrated elements using different wavelengths to provide functions of logical operation, data switching and wavelength conversion. The optical device includes a first optical structure operating at a first wavelength (.lambda..sub.1) and a second optical structure operating at a second wavelength (.lambda..sub.2). The first and second optical structures are formed over a semiconductor substrate. The first optical structure, which operates at the first wavelength (.lambda..sub.1), transmits its data to the second optical structure so that data corresponding to the second wavelength (.lambda..sub.2) can be output. Since the wavelength of input light is different from the wavelength of output light, the optical device serves as a modulator which performs a logic operation and switching function while carrying out wavelength conversion.
摘要翻译：具有双模式分布式布拉格反射（DBR）的垂直调制器包括使用不同波长的一对集成元件，以提供逻辑运算，数据切换和波长转换的功能。光学器件包括以第一波长（λ1）工作的第一光学结构和以第二波长（λ2）操作的第二光学结构。第一和第二光学结构形成在半导体衬底上。在第一波长（λ1）下操作的第一光学结构将其数据传输到第二光学结构，使得可以输出对应于第二波长（λ2）的数据。由于输入光的波长与输出光的波长不同，所以光学器件用作在执行波长转换时执行逻辑运算和切换功能的调制器。

3. 发明授权

US5500047A Apparatus for adsorbing atomic hydrogen on surface 失效
标题翻译：用于在表面吸附原子氢的装置
公开(公告)号：US5500047A
公开(公告)日：1996-03-19
申请号：US354037
申请日：1994-12-06
申请人： Kang-Ho Park , Jeong-Sook Ha , Seong-Ju Park , El-Hang Lee
发明人： Kang-Ho Park , Jeong-Sook Ha , Seong-Ju Park , El-Hang Lee
IPC分类号： H01L21/203 , C01B3/00 , C23C16/00 , C23C16/452 , G21K5/00
CPC分类号： C01B3/0094 , C23C16/452 , Y02E60/327
摘要： A surface adsorption apparatus for dissociating H.sub.2 molecules into atomic hydrogen in a vacuum vessel and adsorbing the atomic hydrogen on a sample surface is disclosed. A vacuum tube is mounted in the vacuum vessel. A nozzle is connected to the vacuum tube having a plurality of bent portions. A heating member receives electrical power from a power supply source and heats the nozzle to a predetermined temperature. A heat shielding member is located in a path of the atomic hydrogen between one end of the nozzle and the sample surface for shielding the sample surface from heat radiating from the nozzle. The H.sub.2 molecules collide with inner wall surfaces of the bent portions to be readily dissociate into the atomic hydrogen. The atomic dissociated hydrogen propagates toward the sample surface and is adsorbed on the sample surface. Since the nozzle comprises bent portions, H.sub.2 molecules frequently collide with inner wall surfaces of the nozzle to readily dissociate into atomic hydrogen. The H.sub.2 collision efficiency is significantly improved by increased surface collisions with the bent portions. Because the bent portions of the nozzle are heated by the heating member, the construction of the apparatus is simplified.
摘要翻译：公开了一种用于在真空容器中将H 2分子解离成原子氢并将样品表面上的氢原子吸附的表面吸附装置。真空管安装在真空容器中。喷嘴连接到具有多个弯曲部分的真空管。加热构件从电源接收电力并将喷嘴加热至预定温度。热屏蔽构件位于喷嘴的一端和样品表面之间的原子氢的路径中，用于屏蔽样品表面免受从喷嘴辐射的热。 H2分子与弯曲部分的内壁表面碰撞，容易解离成原子氢。原子解离的氢向样品表面传播并吸附在样品表面上。由于喷嘴包括弯曲部分，所以H2分子经常与喷嘴的内壁表面碰撞以容易地解离成原子氢。通过增加与弯曲部分的表面碰撞，H2碰撞效率显着提高。由于喷嘴的弯曲部分被加热部件加热，因此简化了装置的结构。

4. 发明授权

US5450507A Fiber-optic address detector in photonic packet switching device and method for fabricating the same 失效
标题翻译：光子分组交换装置中的光纤地址检测器及其制造方法
公开(公告)号：US5450507A
公开(公告)日：1995-09-12
申请号：US354867
申请日：1994-12-09
申请人： Jong-Dug Shin , Min-Yong Jeon , El-Hang Lee
发明人： Jong-Dug Shin , Min-Yong Jeon , El-Hang Lee
IPC分类号： G02B6/00 , G02B6/28 , G02B6/30 , H04B10/00 , H04L12/70 , H04Q11/00
CPC分类号： G02B6/2861 , H04Q11/0003
摘要： A fiber-optic address detector comprises fiber-optic delay lines on one surface of which a metal thin film is evaporated, the fiber-optic delay lines being connected in a melting state to fiber-optic couplers, wherein inputting address photonic signals are tapped by the inputting fiber-optic couplers, reflected by the metal thin films at the end portion of the fiber-optic delay line and then re-combined by the inputting fiber-optic coupler, whereby it can reduce the number of the fiber-optic coupler used in the conventional fiber-optic address detector to one half as well as obtain the same address detection effect.
摘要翻译：光纤地址检测器包括在其表面上的金属薄膜被蒸发的光纤延迟线，光纤延迟线以熔化状态连接到光纤耦合器，其中输入地址光信号由输入光纤耦合器，由光纤延迟线端部的金属薄膜反射，然后由输入光纤耦合器重新组合，从而可以减少使用的光纤耦合器的数量在传统的光纤地址检测器中一半，以及获得相同的地址检测效果。

5. 发明授权

US5448080A Ultrafast optical switching device having a double-junction multiple quantum well structure 失效
标题翻译：具有双结多量子阱结构的超快光开关器件
公开(公告)号：US5448080A
公开(公告)日：1995-09-05
申请号：US274192
申请日：1994-07-12
申请人： Seon-Gyu Han , Jong-Tai Lee , Byueng-Su Yoo , Tae-Hyung Zyung , Young-Wan Choi , Pyong-Woon Park , El-Hang Lee
发明人： Seon-Gyu Han , Jong-Tai Lee , Byueng-Su Yoo , Tae-Hyung Zyung , Young-Wan Choi , Pyong-Woon Park , El-Hang Lee
IPC分类号： G02F1/015 , G02F1/01 , G02F1/35 , H01L27/14 , H01L31/00
CPC分类号： G02F1/01716 , B82Y20/00 , G02F2001/01733
摘要： Disclosed is an ultrafast optical switching device having two types of multiple quantum well structures to be connected with each other, the device comprising a semi-insulating substrate; and a first and a second multiple quantum well structure formed sequentially on the substrate and united with each other to produce a double-junction multiple quantum well structure. Each of the multiple quantum well structures has nonlinear optical effects and two life time constants present while switching off in the device. One of the life time constants corresponds to a short life time constant to be determined dependent on electrons in the double-junction multiple quantum well structure and the other of the life time constants corresponds to a long life time constant to be determined dependent on holes and lattices therein. The multiple quantum well structures are formed in such a manner that short life time constants thereof may be in-phase with each other and long life time constants thereof may be out-of-phase to each other. The multiple quantum well structures are formed differently from each other in composition.
摘要翻译：公开了一种具有彼此连接的两种类型的多量子阱结构的超快速光学开关器件，该器件包括半绝缘衬底; 以及在衬底上顺序地形成并彼此结合以产生双结多量子阱结构的第一和第二多量子阱结构。多个量子阱结构中的每个都具有非线性光学效应，并且在器件中关断时存在两个寿命常数。寿命常数之一对应于取决于双结多量子阱结构中的电子而确定的短寿命常数，而另一个寿命常数对应于取决于孔的长寿命时间常数，格子。多量子阱结构以这样的方式形成，使得其寿命短的常数可以彼此同相，并且其长寿命时间常数可能彼此不同相。多个量子阱结构在组成上彼此不同地形成。

6. 发明授权

US6163554A Optical fiber raman laser 失效
标题翻译：光纤拉曼激光
公开(公告)号：US6163554A
公开(公告)日：2000-12-19
申请号：US162568
申请日：1998-09-29
申请人： Do IL Chang , Ho Young Kim , El Hang Lee
发明人： Do IL Chang , Ho Young Kim , El Hang Lee
IPC分类号： G02B6/44 , H01S3/067 , H01S3/30
CPC分类号： H01S3/302 , H01S3/0675
摘要： An optical fiber Raman laser includes an optical fiber which is a nonlinear optical medium, for implementing a nonlinear Stokes frequency shift; a wavelength-division multiplexing optical fiber coupler means, coupled to said optical fiber in parallel, for separating each Stokes frequency shifted wavelengths and pump wavelength, for internally resonating the Stokes frequency shited light wavelengths and for output-coupling said laser output light which is a second order Stokes frequency shifted wavelength; a first fiber Bragg grating means connected to said wavelength division multiplexing (WDM) optical fiber coupler means in serial, for transmitting light of the pump source and for selecting output wave of the Raman laser; and a second fiber Bragg grating means connected to said wavelength division multiplexing (WDM) optical fiber coupler means, which has maximum reflectivity on the wavelength of the pump source, for full-reflecting and re-inputting the light of the pump source to said optical fiber.
摘要翻译：一种光纤拉曼激光器包括一种用于实现非线性斯托克斯频移的非线性光学介质的光纤; 并联耦合到所述光纤的波分复用光纤耦合器装置，用于分离每个斯托克斯频移波长和泵波长，用于使斯托克斯频率光束波长内部谐振，并输出耦合所述激光输出光二阶斯托克斯频移波长; 串联连接到所述波分复用（WDM）光纤耦合器装置的第一光纤布喇格光栅装置，用于透射泵浦光的光并选择拉曼激光的输出波; 以及连接到所述波分复用（WDM）光纤耦合器装置的第二光纤布拉格光栅装置，其对泵浦源的波长具有最大反射率，用于将泵浦光的光全反射和重新输入到所述光纤维。

7. 发明授权

US6115375A Multistage optical packet switching apparatus using self electro-optic-effect devices 失效
标题翻译：使用自电光效应器件的多级光分组交换设备
公开(公告)号：US6115375A
公开(公告)日：2000-09-05
申请号：US967797
申请日：1997-11-10
申请人： Kwang Joon Kim , O Kyun Kwon , Kyung Sook Hyun , Seok Ho Song , El Hang Lee
发明人： Kwang Joon Kim , O Kyun Kwon , Kyung Sook Hyun , Seok Ho Song , El Hang Lee
IPC分类号： H04B10/00 , H04Q11/00 , H04L12/50
CPC分类号： H04Q11/0003 , H04Q11/0005 , H04Q2011/0035
摘要： A multistage optical packet switching apparatus with self electro-optic-effect device is disclosed. The apparatus is formed with multistage structure using a plurality of symmetrical self electro-optic-effect devices, self-routing being performed by the control for a header part of optical packets after self-duplication and amplification for the input optical signal. The optical packet switching apparatus using a plurality of symmetrical self electro-optic-effect devices includes a front stage having first and second self electro-optic-effect devices interconnected and a back stage having third and fourth self electro-optic-effect devices interconnected, the 1.quadrature. multistage structure comprising the unit switching modules interconnected each comprising the front and the back stages, the self-duplication and amplification being performed in the front stage and the switching being performed in the back stage. The use of the apparatus is an optical exchange.
摘要翻译：公开了具有自电光效应装置的多级光分组交换装置。该装置使用多个对称的自电光效应装置形成多级结构，通过对输入光信号的自复制和放大之后的光分组的标题部分的控制执行自路由。使用多个对称的自电光效应装置的光分组交换装置包括具有互连的第一和第二自电光效应装置的前级和具有互连的第三和第四自电光效应装置的后级，包括各自包括前级和后级的单元切换模块的1＆amp;多级结构，在前级执行自复制和放大，并且在后级执行切换。该装置的使用是光交换。

8. 发明授权

US6074936A Method of fabricating a quantum device 失效
标题翻译：制造量子器件的方法
公开(公告)号：US6074936A
公开(公告)日：2000-06-13
申请号：US93195
申请日：1998-06-08
申请人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
发明人： Jeong Rae Ro , Sung Bock Kim , El Hang Lee
IPC分类号： H01L21/30 , H01L21/20 , H01L21/205 , H01L21/311 , H01L21/36 , H01L21/00
CPC分类号： B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02639 , H01L21/31116 , Y10S438/962
摘要： A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.
摘要翻译：一种制造量子线结构和器件的方法，以及量子点结构和器件包括以下步骤：在半导体衬底上沉积绝缘层，在绝缘层中形成线图案和方形图案，形成V形槽图案结构和通过热蚀刻将反向四边形金字塔图案化的结构蒸发成量子阱层的未被掩模层的线状掩模区域和方形掩模区域保护的部分，通过交替生长形成量子线和量子点阻挡层和V沟槽图案化衬底上的有源层和反向四边形金字塔图案化衬底。

9. 发明授权

US6055345A Multi-wavelength channel transmission-type optical filter 失效
标题翻译：多波长通道传输型滤光片
公开(公告)号：US6055345A
公开(公告)日：2000-04-25
申请号：US132432
申请日：1998-08-11
申请人： Joon Tae Ahn , Hak Kyu Lee , Kyong Hon Kim , El Hang Lee
发明人： Joon Tae Ahn , Hak Kyu Lee , Kyong Hon Kim , El Hang Lee
IPC分类号： G02F1/1335 , G02B6/34 , G02B6/28
CPC分类号： G02B6/29352
摘要： The present invention provides a multi-wavelength channel transmission-type optical filter that is capable of more narrowing the bandwidth of transmission wavelength in a transmission type optical filter using Mach-Zehnder interferometer. The multi-wavelength channel transmission-type optical filter including a first optical fiber coupler for dividing a broadband light source into two lights, an optical fiber length and optical fiber length controlling unit for controlling the gap of transmission wavelength in which each receives as inputs the above lights divided by the first optical fiber coupler, a second optical fiber coupler for outputting each of the above lights, which are passed through the optical fiber length controlling unit and the optical fiber length, and an optical isolator for narrowing the width of transmission wavelength by connecting the two outputs of the second optical fiber coupler, thereby improving a wavelength selecting characteristics.
摘要翻译：本发明提供一种多波长信道传输型滤光器，其能够使用马赫 - 策德尔（Mach-Zehnder）干涉仪在透射型光学滤波器中使传输波长的带宽变窄。多波长通道透射型光学滤波器，包括用于将宽带光源分为两个光的第一光纤耦合器，用于控制传输波长的间隙的光纤长度和光纤长度控制单元，上述光由第一光纤耦合器分开，第二光纤耦合器，用于输出通过光纤长度控制单元和光纤长度的上述每个光;以及光隔离器，用于缩小透射波长的宽度通过连接第二光纤耦合器的两个输出，从而提高波长选择特性。

10. 发明授权

US5824453A Fabricating method of GaAs substrate having V-shaped grooves 失效
标题翻译：具有V形槽的GaAs衬底的制造方法
公开(公告)号：US5824453A
公开(公告)日：1998-10-20
申请号：US946915
申请日：1997-10-09
申请人： Sung-Bock Kim , Seong-Ju Park , Jeong-Rae Ro , El-Hang Lee
发明人： Sung-Bock Kim , Seong-Ju Park , Jeong-Rae Ro , El-Hang Lee
IPC分类号： H01L29/06 , H01L21/20 , H01L21/302 , H01L21/306 , H01L21/308 , G03F7/00
CPC分类号： H01L21/02395 , H01L21/02433 , H01L21/02546 , H01L21/02639 , H01L21/30617
摘要： Disclosed is a fabricating method of a GaAs substrate having a V-shaped groove in a higher density, that is a double density, the method comprising the steps of forming a Si.sub.3 N.sub.4 layer on a main surface of the GaAs substrate; patterning the Si.sub.3 N.sub.4 layer using a photo-lithography to form a patterned Si.sub.3 N.sub.4 layer having a minimum width; wet-etching the GaAs substrate using the patterned Si.sub.3 N.sub.4 layer as a mask, so as to form (111) and (100) surfaces of the GaAs substrate beneath the patterned Si.sub.3 N.sub.4 ; selectively growing a GaAs film on the GaAs substrate etched thus using the patterned Si.sub.3 N.sub.4 layer as a mask so as to form the GaAs film with two (111) facets only on a (100) surface of the GaAs substrate; and removing the Si.sub.3 N.sub.4 layer. The V-shaped grooves can be formed on a GaAs substrate utilizing a difference of growth rate caused by surface orientation of the substrate, and therefore the grooves can be formed in double density.
摘要翻译：本发明公开了一种GaAs衬底的制造方法，该GaAs衬底具有较高密度的V形沟槽，即双重密度，该方法包括以下步骤：在GaAs衬底的主表面上形成Si 3 N 4层; 使用光刻法构图Si 3 N 4层以形成具有最小宽度的图案化的Si 3 N 4层; 使用图案化的Si 3 N 4层作为掩模对GaAs衬底进行湿法蚀刻，以在图案化的Si 3 N 4之下形成GaAs衬底的（111）和（100）表面; 在GaAs衬底上选择性地生长GaAs膜，使用图案化的Si 3 N 4层作为掩模进行蚀刻，以便仅在GaAs衬底的（100）表面上形成具有两个（111）面的GaAs膜; 并去除Si3N4层。可以使用由衬底的表面取向引起的生长速度差，在GaAs衬底上形成V形槽，因此可以以双重密度形成沟槽。

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