专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4321246A Polycrystalline silicon production 失效
标题翻译：多晶硅生产
公开(公告)号：US4321246A
公开(公告)日：1982-03-23
申请号：US148093
申请日：1980-05-09
申请人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk , Roger G. Nikirk
发明人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk , Roger G. Nikirk
IPC分类号： C01B33/02 , C01B33/107
CPC分类号： C01B33/107 , C01B33/02 , Y10S423/10
摘要： Polycrystalline silicon is produced by a high pressure plasma process. A silicon halide or halosilane is reacted with hydrogen in the presence of a high pressure plasma to deposit silicon on a heated substrate. The effluent from this reaction is collected, the silicon-bearing compounds separated out, and re-introduced to the deposition reaction. The initial silicon bearing compound can be inexpensive silicon tetrachloride. Maximum utilization of all silicon bearing reaction products maximizes polycrystalline silicon production efficiency.
摘要翻译：通过高压等离子体工艺制造多晶硅。在高压等离子体存在下，卤化硅或卤代硅烷与氢反应，以将硅沉积在加热的衬底上。收集该反应的流出物，分离出含硅化合物，并重新引入沉积反应。初始含硅化合物可以是廉价的四氯化硅。所有硅轴承反应产品的最大利用率最大限度地提高了多晶硅的生产效率。

2. 发明授权

US4292342A High pressure plasma deposition of silicon 失效
标题翻译：高压等离子体沉积硅
公开(公告)号：US4292342A
公开(公告)日：1981-09-29
申请号：US148095
申请日：1980-05-09
申请人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk
发明人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk
IPC分类号： C01B33/02 , C23C14/22 , C23C16/01 , C23C16/513
CPC分类号： C23C14/225 , C23C16/01 , C23C16/513
摘要： Polycrystalline silicon is deposited on the interior surface of a shaped container. The silicon is deposited by reacting hydrogen and a silicon bearing gas in the presence of a high pressure plasma. The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.
摘要翻译：多晶硅沉积在成形容器的内表面上。在高压等离子体存在下，通过使氢和含硅气体反应来沉积硅。硅体通过利用热膨胀剪切应力与成形容器分离。

3. 发明授权

US3996094A Silicon manufacture 失效
标题翻译：硅制造
公开(公告)号：US3996094A
公开(公告)日：1976-12-07
申请号：US537981
申请日：1975-01-02
申请人： I. Arnold Lesk
发明人： I. Arnold Lesk
IPC分类号： C30B13/08 , C30B13/24 , C30B15/00 , C30B15/02 , C30B15/24 , C30B29/64 , B01J17/18 , B01J17/08
CPC分类号： C30B15/24 , C30B13/08 , C30B13/24 , C30B15/00 , C30B15/02 , C30B29/60
摘要： A method of producing monocrystalline semiconductor material in web form which provides the steps of providing a web of polycrystalline semiconductor material having a width which is much greater than its thickness, providing a monocrystalline semiconductor material seed having the same relative dimensions as the polycrystalline material source, providing one or more semiconductor material shaping members, contacting the source, the seed and the shaping member and heating the interface therebetween preferentially to produce a molten zone, moving said monocrystalline semiconductor material seed away from said molten zone as monocrystalline semiconductor material is formed thereon.
摘要翻译：一种以网状形成单晶半导体材料的方法，其提供了提供宽度远大于其厚度的多晶半导体材料的网状物的步骤，提供具有与多晶材料源相同的相对尺寸的单晶半导体材料种子，提供一个或多个半导体材料成形构件，使源，种子和成形构件接触并且优先地加热它们之间的界面，以产生熔融区，使单晶半导体材料种子远离所述熔融区移动，作为其上形成的单晶半导体材料。

4. 发明授权

US4410471A Ribbon-to-ribbon conversion with shaped molten zone 失效
标题翻译：带状到带状转换成形熔融区
公开(公告)号：US4410471A
公开(公告)日：1983-10-18
申请号：US323797
申请日：1981-11-23
申请人： Richard W. Gurtler , I. Arnold Lesk
发明人： Richard W. Gurtler , I. Arnold Lesk
IPC分类号： B23K26/00 , C30B13/00 , C30B13/22 , H01L21/263 , B23K28/00
CPC分类号： B23K26/1429 , C30B13/00 , C30B13/22 , C30B29/60 , H01L21/2636
摘要： A method is provided for converting polycrystalline ribbon to macrocrystalline ribbon in which a molten zone is formed in and moved along the polycrystalline ribbon. Macrocrystalline material in ribbon shape is formed as the molten region passes and the molten material resolidifies. The molten zone is formed in the polycrystalline ribbon by impinging energy beams from two energy sources on the two major surfaces of the ribbon. The combined energy from the first and second energy sources is sufficient to melt the ribbon material and to form a molten zone extending through the thickness of the ribbon. The molten zone has an intersection with each of the major surfaces of the ribbon. The two energy sources are adjusted independently to control the area of the intersection of the molten zone with each surface so that the areas are non-identical.
摘要翻译：提供了一种用于将多晶带转变成其中形成熔融区并沿多晶带移动的宏晶带的方法。当熔融区域通过并且熔融材料再凝固时，形成带状的微晶材料。熔融区通过在带的两个主表面上撞击来自两个能量源的能量束而形成在多晶带中。来自第一和第二能源的组合能量足以熔化带状材料并形成延伸穿过带的厚度的熔融区。熔融区域与带的每个主表面具有交叉。两个能量源被独立地调节以控制熔融区域与每个表面的交点的面积，使得区域不相同。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式