专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4321246A Polycrystalline silicon production 失效
标题翻译：多晶硅生产
公开(公告)号：US4321246A
公开(公告)日：1982-03-23
申请号：US148093
申请日：1980-05-09
申请人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk , Roger G. Nikirk
发明人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk , Roger G. Nikirk
IPC分类号： C01B33/02 , C01B33/107
CPC分类号： C01B33/107 , C01B33/02 , Y10S423/10
摘要： Polycrystalline silicon is produced by a high pressure plasma process. A silicon halide or halosilane is reacted with hydrogen in the presence of a high pressure plasma to deposit silicon on a heated substrate. The effluent from this reaction is collected, the silicon-bearing compounds separated out, and re-introduced to the deposition reaction. The initial silicon bearing compound can be inexpensive silicon tetrachloride. Maximum utilization of all silicon bearing reaction products maximizes polycrystalline silicon production efficiency.
摘要翻译：通过高压等离子体工艺制造多晶硅。在高压等离子体存在下，卤化硅或卤代硅烷与氢反应，以将硅沉积在加热的衬底上。收集该反应的流出物，分离出含硅化合物，并重新引入沉积反应。初始含硅化合物可以是廉价的四氯化硅。所有硅轴承反应产品的最大利用率最大限度地提高了多晶硅的生产效率。

2. 发明授权

US4292342A High pressure plasma deposition of silicon 失效
标题翻译：高压等离子体沉积硅
公开(公告)号：US4292342A
公开(公告)日：1981-09-29
申请号：US148095
申请日：1980-05-09
申请人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk
发明人： Kalluri R. Sarma , M. John Rice, Jr. , I. Arnold Lesk
IPC分类号： C01B33/02 , C23C14/22 , C23C16/01 , C23C16/513
CPC分类号： C23C14/225 , C23C16/01 , C23C16/513
摘要： Polycrystalline silicon is deposited on the interior surface of a shaped container. The silicon is deposited by reacting hydrogen and a silicon bearing gas in the presence of a high pressure plasma. The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.
摘要翻译：多晶硅沉积在成形容器的内表面上。在高压等离子体存在下，通过使氢和含硅气体反应来沉积硅。硅体通过利用热膨胀剪切应力与成形容器分离。

3. 发明授权

US4309259A High pressure plasma hydrogenation of silicon tetrachloride 失效
标题翻译：高压等离子体氢化四氯化硅
公开(公告)号：US4309259A
公开(公告)日：1982-01-05
申请号：US148094
申请日：1980-05-09
申请人： Kalluri R. Sarma , M. John Rice, Jr.
发明人： Kalluri R. Sarma , M. John Rice, Jr.
IPC分类号： B01J12/00 , C01B33/107
CPC分类号： C01B33/1071 , B01J12/002 , B01J2219/0894 , Y10S423/10
摘要： A method is disclosed for the plasma hydrogenation of silicon tetrachloride. A high pressure plasma is utilized to effect a reaction of hydrogen and silicon tetrachloride to form trichlorosilane and other hydrogenated silicon chlorides.
摘要翻译：公开了四氯化硅的等离子体氢化的方法。利用高压等离子体进行氢和四氯化硅的反应，形成三氯硅烷和其它氢化氯化硅。

4. 发明授权

US4590024A Silicon deposition process 失效
标题翻译：硅沉积工艺
公开(公告)号：US4590024A
公开(公告)日：1986-05-20
申请号：US594456
申请日：1984-03-29
申请人： Israel A. Lesk , M. John Rice, Jr. , Kalluri R. Sarma
发明人： Israel A. Lesk , M. John Rice, Jr. , Kalluri R. Sarma
IPC分类号： C30B13/00
CPC分类号： C30B29/06 , C30B13/00
摘要： An improved process is disclosed for the deposition in a reactor vessel of silicon on the interior walls of the reactor vessel and for the subsequent separation of the silicon from those walls. The reactor vessel has a generally rectangular cross section and is formed of a refractory material from which the deposited silicon separates by thermal expansion shear separation during cool down of the vessel and the deposited silicon. To improve the output of the deposition system, a plurality of partitions are provided in the reactor vessel and integral with the reactor walls. These partitions act as additional deposition surfaces, increasing the number of silicon sheets deposited as well as increasing the efficiency of the chemical reaction.
摘要翻译：公开了一种改进的方法，用于沉积在反应器容器的内壁上的硅的反应器容器中，并且随后将硅与这些壁分离。反应器容器具有大致矩形的横截面，并且由耐热材料形成，沉积的硅通过在容器和沉积的硅冷却期间的热膨胀剪切分离而分离。为了提高沉积系统的输出，在反应器容器中提供多个隔板并与反应器壁成一体。这些隔板作为附加的沉积表面，增加沉积的硅片的数量以及提高化学反应的效率。

5. 发明授权

US4555303A Oxidation of material in high pressure oxygen plasma 失效
标题翻译：在高压氧等离子体中氧化材料
公开(公告)号：US4555303A
公开(公告)日：1985-11-26
申请号：US656822
申请日：1984-10-02
申请人： Ronald Legge , M. John Rice, Jr. , Kalluri R. Sarma
发明人： Ronald Legge , M. John Rice, Jr. , Kalluri R. Sarma
IPC分类号： B08B7/00 , H01L21/00 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/67069 , B08B7/0035 , Y10S438/906 , Y10S438/935
摘要： A process is disclosed for removing carbonaceous material from a surface in a high pressure oxygen plasma. A surface, such as a surface of a silicon ribbon, having a layer of carbonaceous material thereon is positioned in a high pressure plasma reaction volume. A high pressure rf plasma is generated in which the plasma includes reactive and ionic oxygen species. The reactive oxygen species are directed to and react with the layer of carbonaceous material to oxidize that material. The reaction products of the oxidation step include carbon dioxide and, possibly a non-oxidizing ash material which can easily be removed from the silicon surface.
摘要翻译：公开了从高压氧等离子体中的表面除去碳质材料的方法。在其上具有碳质材料层的表面，例如硅带的表面，位于高压等离子体反应体积中。产生高压rf等离子体，其中等离子体包括反应性和离子氧。活性氧物质被引导并与碳质材料层反应以氧化该材料。氧化步骤的反应产物包括可以容易地从硅表面去除的二氧化碳和可能的非氧化灰分材料。

6. 发明申请

US20110242658A1 FILM STRUCTURE HAVING INORGANIC SURFACE STRUCTURES AND RELATED FABRICATION METHODS 审中-公开
标题翻译：具有无机表面结构的膜结构和相关制造方法
公开(公告)号：US20110242658A1
公开(公告)日：2011-10-06
申请号：US12753964
申请日：2010-04-05
申请人： Kalluri R. Sarma
发明人： Kalluri R. Sarma
IPC分类号： G02B5/00 , B05D5/06 , B29D11/00 , B32B3/10
CPC分类号： G06F3/041 , Y10T428/24802 , Y10T428/24926
摘要： Methods and apparatus are provided for forming a smudge-resistant film structure that comprises a plurality of transparent inorganic surface structures overlying a transparent substrate. A method for forming the film structure comprises providing a transparent substrate and forming a plurality of transparent surface structures overlying the transparent substrate, wherein each of the transparent surface structures comprises an inorganic material.
摘要翻译：提供了用于形成防透光膜结构的方法和装置，其包括覆盖在透明基板上的多个透明无机表面结构。一种形成薄膜结构的方法包括提供透明基底并形成覆盖透明基底的多个透明表面结构，其中每个透明表面结构都包括无机材料。

7. 发明申请

US20090179848A1 METHOD AND SYSTEM FOR IMPROVING DIMMING PERFORMANCE IN A FIELD SEQUENTIAL COLOR DISPLAY DEVICE 有权
标题翻译：用于改善现场顺序颜色显示装置中的调色性能的方法和系统
公开(公告)号：US20090179848A1
公开(公告)日：2009-07-16
申请号：US11972199
申请日：2008-01-10
申请人： John Schmidt , Kalluri R. Sarma , Dennis M. Davey
发明人： John Schmidt , Kalluri R. Sarma , Dennis M. Davey
IPC分类号： G09G3/36 , H04N5/66
CPC分类号： G09G3/3413 , G09G3/2081 , G09G3/3426 , G09G2310/0235 , G09G2320/041 , G09G2320/064
摘要： Methods and systems for displaying an image on a display device having first and second light sources are provided. A video signal is provided to the display device. The video signal includes first and second video frames. Each video frame includes first and second sub-frames corresponding to the respective first and second light sources. The first light source is operated for a first duration during the first sub-frame of the first video frame. The first light source is operated for a second duration during the first sub-frame of the second video frame. The second duration is different from the first duration.
摘要翻译：提供了用于在具有第一和第二光源的显示装置上显示图像的方法和系统。视频信号被提供给显示装置。视频信号包括第一和第二视频帧。每个视频帧包括对应于相应的第一和第二光源的第一和第二子帧。第一光源在第一视频帧的第一子帧期间操作第一持续时间。第一光源在第二视频帧的第一子帧期间操作第二持续时间。第二个持续时间与第一个持续时间不同。

8. 发明授权

US07316942B2 Flexible active matrix display backplane and method 有权
标题翻译：灵活的有源矩阵显示背板和方法
公开(公告)号：US07316942B2
公开(公告)日：2008-01-08
申请号：US11058062
申请日：2005-02-14
申请人： Kalluri R. Sarma , Charles Chanley
发明人： Kalluri R. Sarma , Charles Chanley
IPC分类号： H01L21/00
CPC分类号： H01L27/1218 , G02F1/133305 , G02F1/13439 , G02F1/1368 , H01L27/1214 , H01L27/1259 , H01L29/41733 , H01L29/66765 , H01L29/78603
摘要： An active matrix display backplane is formed by annealing a flexible dielectric substrate, and then forming one or more thin-film-transistors (TFTs), one or more pixel electrodes, and an interconnect on a surface of the annealed substrate. The interconnect includes individual, spaced apart electrodes that are electrically coupled to one another. One of the interconnect electrodes is electrically coupled to a TFT, and the other interconnect electrode is electrically coupled to the pixel electrode, to thereby electrically interconnect the TFT and the pixel electrode.
摘要翻译：通过退火柔性电介质基板，然后在退火基板的表面上形成一个或多个薄膜晶体管（TFT），一个或多个像素电极和互连形成有源矩阵显示背板。互连包括彼此电耦合的单独的间隔开的电极。互连电极中的一个电耦合到TFT，并且另一个互连电极电耦合到像素电极，从而电连接TFT和像素电极。

9. 发明授权

US5258323A Single crystal silicon on quartz 失效
标题翻译：石英单晶硅
公开(公告)号：US5258323A
公开(公告)日：1993-11-02
申请号：US998968
申请日：1992-12-29
申请人： Kalluri R. Sarma , Charles S. Chanley
发明人： Kalluri R. Sarma , Charles S. Chanley
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1368 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/764 , H01L27/12 , H01L29/786
CPC分类号： H01L21/76264 , H01L21/2007 , H01L21/764 , H01L21/76275 , H01L21/76289 , Y10S148/012 , Y10S148/135 , Y10S148/15 , Y10S438/977
摘要： A method for fabricating single crystal islands on a high temperature substrate, thereby allowing for the use of high temperature processes to further make devices incorporating the islands such as, for example, high mobility thin film transistor integrated drivers for active matrix displays. The method essentially includes depositing an etch stop layer on a single crystal silicon substrate, depositing a single crystal silicon device layer on the etch stop layer, bonding a quartz substrate to the single crystal silicon device layer at room temperature, sealing and securing with an adhesive the edges of the single crystal silicon substrate, the etch stop layer, the single crystal silicon device layer and the quartz substrate, grinding away a portion of the silicon substrate and a portion of the adhesive, etching away the remaining portion of the silicon substrate, removing the remaining portion of the adhesive, etching away the etch stop layer, applying a photoresist mask on the single crystal silicon device layer for defining the islands on the single crystal silicon device layer, etching single crystal silicon islands, and then the first non-room-temperature process of diffusion bonding the single crystal silicon islands to the quartz substrate.
摘要翻译：一种用于在高温衬底上制造单晶岛的方法，从而允许使用高温工艺来进一步制造并入岛的器件，例如用于有源矩阵显示器的高迁移率薄膜晶体管集成驱动器。该方法基本上包括在单晶硅衬底上沉积蚀刻停止层，在蚀刻停止层上沉积单晶硅器件层，在室温下将石英衬底结合到单晶硅器件层，用粘合剂密封和固定单晶硅衬底，蚀刻停止层，单晶硅器件层和石英衬底的边缘，研磨硅衬底的一部分和粘合剂的一部分，蚀刻掉硅衬底的剩余部分，去除粘合剂的剩余部分，蚀刻掉蚀刻停止层，在单晶硅器件层上施加光致抗蚀剂掩模以限定单晶硅器件层上的岛，蚀刻单晶硅岛，将单晶硅岛扩散接合到石英衬底的室温过程。

10. 发明授权

US5168074A Active matrix liquid crystal display fabrication for grayscale 失效
标题翻译：有源矩阵液晶显示器制造用于灰度级
公开(公告)号：US5168074A
公开(公告)日：1992-12-01
申请号：US696656
申请日：1991-05-07
申请人： Kalluri R. Sarma
发明人： Kalluri R. Sarma
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368
CPC分类号： G02F1/1362 , G02F1/136213 , G02F2001/134345 , G02F2001/134354 , Y10S148/014
摘要： A structure and method of fabricating a active matrix display with halftone grayscale and wide viewing angle, having an active matrix array and a control capacitor array fabricated on separate substrates.
摘要翻译：制造具有半色调灰度和宽视角的有源矩阵显示器的结构和方法，其具有制造在分开的基板上的有源矩阵阵列和控制电容器阵列。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式