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1. 发明授权

US08629040B2 Methods for epitaxially growing active regions between STI regions 有权
标题翻译：在STI区域之间外延生长活性区域的方法
公开(公告)号：US08629040B2
公开(公告)日：2014-01-14
申请号：US13298112
申请日：2011-11-16
申请人： Kai-Tai Chang , Yi-Shan Chen , Hsin-Chih Chen , Chih-Hsin Ko , Clement Hsingjen Wann
发明人： Kai-Tai Chang , Yi-Shan Chen , Hsin-Chih Chen , Chih-Hsin Ko , Clement Hsingjen Wann
IPC分类号： H01L21/76
CPC分类号： H01L21/02653 , H01L21/02639 , H01L21/0337 , H01L21/76224 , H01L21/76229
摘要： A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches.
摘要翻译：一种方法包括在衬底上形成硬掩模，图案化硬掩模以形成第一多个沟槽，以及将电介质材料填充到第一多个沟槽中以形成多个电介质区域。硬掩模从多个电介质区域之间移除，其中第二多个沟槽被去除的硬掩模留下。进行外延步骤以在第二多个沟槽中生长半导体材料。

2. 发明申请

US20130122686A1 Reverse Tone STI Formation 有权
标题翻译：反向色调形成
公开(公告)号：US20130122686A1
公开(公告)日：2013-05-16
申请号：US13298112
申请日：2011-11-16
申请人： Kai-Tai Chang , Yi-Shan Chen , Hsin-Chih Chen , Chih-Hsin Ko , Clement Hsingjen Wann
发明人： Kai-Tai Chang , Yi-Shan Chen , Hsin-Chih Chen , Chih-Hsin Ko , Clement Hsingjen Wann
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/02653 , H01L21/02639 , H01L21/0337 , H01L21/76224 , H01L21/76229
摘要： A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches.
摘要翻译：一种方法包括在衬底上形成硬掩模，图案化硬掩模以形成第一多个沟槽，以及将电介质材料填充到第一多个沟槽中以形成多个电介质区域。硬掩模从多个电介质区域之间移除，其中第二多个沟槽被去除的硬掩模留下。进行外延步骤以在第二多个沟槽中生长半导体材料。

3. 发明授权

US08809202B2 Methods of manufacturing semiconductor devices including use of a protective material 有权
标题翻译：制造包括使用保护材料的半导体器件的方法
公开(公告)号：US08809202B2
公开(公告)日：2014-08-19
申请号：US13396515
申请日：2012-02-14
申请人： Chih-Hui Weng , Wei-Sheng Yun , Shao-Ming Yu , Hsin-Chih Chen , Chih-Hsin Ko , Clement Hsingjen Wann
发明人： Chih-Hui Weng , Wei-Sheng Yun , Shao-Ming Yu , Hsin-Chih Chen , Chih-Hsin Ko , Clement Hsingjen Wann
IPC分类号： H01L21/31
CPC分类号： H01L21/823412 , H01L21/3083 , H01L21/32 , H01L21/823418 , H01L21/823481 , H01L25/50 , H01L29/1054 , H01L29/66651 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a protective material over a bottom surface and edges of the workpiece. A top surface of the workpiece is processed. The protective material protects the edges and the bottom surface of the workpiece during the processing of the top surface of the workpiece.
摘要翻译：公开了制造半导体器件的方法。在一个实施例中，制造半导体器件的方法包括提供工件，以及在工件的底表面和边缘上形成保护材料。加工工件的顶面。保护材料在加工工件的上表面时保护工件的边缘和底面。

4. 发明申请

US20130210212A1 Semiconductor Device Manufacturing Methods 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20130210212A1
公开(公告)日：2013-08-15
申请号：US13396515
申请日：2012-02-14
申请人： Chih-Hui Weng , Wei-Sheng Yun , Shao-Ming Yu , Hsin-Chih Chen , Chih-Hsin Ko , Clement Hsingjen Wann
发明人： Chih-Hui Weng , Wei-Sheng Yun , Shao-Ming Yu , Hsin-Chih Chen , Chih-Hsin Ko , Clement Hsingjen Wann
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L21/823412 , H01L21/3083 , H01L21/32 , H01L21/823418 , H01L21/823481 , H01L25/50 , H01L29/1054 , H01L29/66651 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a protective material over a bottom surface and edges of the workpiece. A top surface of the workpiece is processed. The protective material protects the edges and the bottom surface of the workpiece during the processing of the top surface of the workpiece.
摘要翻译：公开了制造半导体器件的方法。在一个实施例中，制造半导体器件的方法包括提供工件，以及在工件的底表面和边缘上形成保护材料。加工工件的顶面。保护材料在加工工件的上表面时保护工件的边缘和底面。

5. 发明授权

US09324866B2 Structure and method for transistor with line end extension 有权
标题翻译：具有线端延伸的晶体管的结构和方法
公开(公告)号：US09324866B2
公开(公告)日：2016-04-26
申请号：US13356235
申请日：2012-01-23
申请人： Shao-Ming Yu , Chang-Yun Chang , Chih-Hao Chang , Hsin-Chih Chen , Kai-Tai Chang , Ming-Feng Shieh , Kuei-Liang Lu , Yi-Tang Lin
发明人： Shao-Ming Yu , Chang-Yun Chang , Chih-Hao Chang , Hsin-Chih Chen , Kai-Tai Chang , Ming-Feng Shieh , Kuei-Liang Lu , Yi-Tang Lin
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/78 , H01L29/417 , H01L29/66
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/823878 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/41783 , H01L29/41791 , H01L29/66545 , H01L29/66636 , H01L29/66795 , H01L29/785
摘要： The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; an isolation feature formed in the semiconductor substrate; a first active region and a second active region formed in the semiconductor substrate, wherein the first and second active regions extend in a first direction and are separated from each other by the isolation feature; and a dummy gate disposed on the isolation feature, wherein the dummy gate extends in the first direction to the first active region from one side and to the second active region from another side.
摘要翻译：本公开提供了一种半导体结构。半导体结构包括半导体衬底; 形成在半导体衬底中的隔离特征; 形成在所述半导体衬底中的第一有源区和第二有源区，其中所述第一和第二有源区在第一方向上延伸并且通过隔离特征彼此分离; 以及设置在所述隔离特征上的伪栅极，其中所述伪栅极在第一方向上从另一侧的一侧延伸到所述第一有源区域并且从另一侧向所述第二有源区域延伸。

6. 发明申请

US20130187237A1 STRUCTURE AND METHOD FOR TRANSISTOR WITH LINE END EXTENSION 有权
标题翻译：具有线端延伸的晶体管的结构和方法
公开(公告)号：US20130187237A1
公开(公告)日：2013-07-25
申请号：US13356235
申请日：2012-01-23
申请人： Shao-Ming Yu , Chang-Yun Chang , Chih-Hao Chang , Hsin-Chih Chen , Kai-Tai Chang , Ming-Feng Shieh , Kuei-Liang Lu , Yi-Tang Lin
发明人： Shao-Ming Yu , Chang-Yun Chang , Chih-Hao Chang , Hsin-Chih Chen , Kai-Tai Chang , Ming-Feng Shieh , Kuei-Liang Lu , Yi-Tang Lin
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/823878 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/41783 , H01L29/41791 , H01L29/66545 , H01L29/66636 , H01L29/66795 , H01L29/785
摘要： The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; an isolation feature formed in the semiconductor substrate; a first active region and a second active region formed in the semiconductor substrate, wherein the first and second active regions extend in a first direction and are separated from each other by the isolation feature; and a dummy gate disposed on the isolation feature, wherein the dummy gate extends in the first direction to the first active region from one side and to the second active region from another side.
摘要翻译：本公开提供了一种半导体结构。半导体结构包括半导体衬底; 形成在半导体衬底中的隔离特征; 形成在所述半导体衬底中的第一有源区和第二有源区，其中所述第一和第二有源区在第一方向上延伸并且通过隔离特征彼此分离; 以及设置在所述隔离特征上的伪栅极，其中所述伪栅极在第一方向上从另一侧的一侧延伸到所述第一有源区域并且从另一侧向所述第二有源区域延伸。

7. 发明授权

US08203836B2 Cover structure 有权
标题翻译：封面结构
公开(公告)号：US08203836B2
公开(公告)日：2012-06-19
申请号：US12696306
申请日：2010-01-29
申请人： Hsin-Chih Chen , Yun-Chung Chang , Hsin-Chi Huang , Meng-Wei Chen , Li-Wen Hsu , Ju-I Lee
发明人： Hsin-Chih Chen , Yun-Chung Chang , Hsin-Chi Huang , Meng-Wei Chen , Li-Wen Hsu , Ju-I Lee
IPC分类号： G06F1/16
CPC分类号： G06F1/181
摘要： A cover structure is disposed at the electronic device. The electronic device includes a frame with an opening and a power supply. The cover structure includes a cover and a pivotal portion. The cover includes an inner surface, an outer surface, and a touch portion. The pivotal portion includes a pivotal part and a trigger. The pivotal part is located on the inner surface. The trigger is located at the opening of the frame and connected with the pivotal part. The touch portion corresponds to the opening. When the touch portion is pressed, the pivotal part drives the trigger to trigger the power supply to drive the electronic device.
摘要翻译：盖结构设置在电子设备上。电子设备包括具有开口和电源的框架。盖结构包括盖和枢转部分。盖包括内表面，外表面和触摸部分。枢转部分包括枢转部分和触发器。枢轴部分位于内表面。触发器位于框架的开口处并与枢转部分连接。触摸部分对应于开口。当按压触摸部分时，枢转部分驱动触发器以触发电源以驱动电子设备。

8. 发明申请

US20060171169A1 Lamp positioning structure 有权
标题翻译：灯具定位结构
公开(公告)号：US20060171169A1
公开(公告)日：2006-08-03
申请号：US11335665
申请日：2006-01-20
申请人： Yi-Chen Kuo , Wei-Chih Chiu , Hsin-Chih Chen , Shr-Bin Lin , Yu-Chen Hsu , Kuang-Yu Fan
发明人： Yi-Chen Kuo , Wei-Chih Chiu , Hsin-Chih Chen , Shr-Bin Lin , Yu-Chen Hsu , Kuang-Yu Fan
IPC分类号： F21V7/04
CPC分类号： G02F1/133604 , G02F1/133608 , G02F1/133611
摘要： A lamp positioning structure is disclosed. The lamp positioning structure is assembled on a display device and includes a fastening element mounted on a side plate of a rear plate. The lamp is curve-line-shaped and is mounted over the rear plate. Moreover, the lamp includes at least a curved section. Also, a display panel having a display area is assembled over the rear plate to cover the lamp. The curved section of the lamp is arranged in the display area without damaging the brightness uniformity nearby. In addition, two elastic arms are disposed on both lateral sides of the fastening element to abut against the curved section. Through the arrangement of the positioning structure, the breakage and the displacement of the lamp can be reduced or even prevented. The brightness of the curved section corresponding to the fastening element becomes more uniform and without definite dark spots.
摘要翻译：公开了一种灯具定位结构。灯定位结构组装在显示装置上，并且包括安装在后板的侧板上的紧固元件。灯是曲线形的，并安装在后板上。此外，灯至少包括弯曲部分。此外，具有显示区域的显示面板组装在后板上以覆盖灯。灯的弯曲部分布置在显示区域中，而不损害附近的亮度均匀性。此外，两个弹性臂设置在紧固元件的两个侧面上以抵靠弯曲部分。通过定位结构的布置，可以降低或甚至防止灯的断裂和位移。对应于紧固元件的弯曲部分的亮度变得更均匀并且没有明确的黑点。

9. 发明授权

US4855066A Hydrocyclone 失效
标题翻译：水力旋流器
公开(公告)号：US4855066A
公开(公告)日：1989-08-08
申请号：US189157
申请日：1988-05-02
申请人： Charles A. Petty , Hsin-Chih Chen , Robert D. Dvorak
发明人： Charles A. Petty , Hsin-Chih Chen , Robert D. Dvorak
IPC分类号： B01D17/02 , B04C5/26
CPC分类号： B04C5/26 , B01D17/0217
摘要： A hydrocyclonic apparatus has been designed to separate a less dense dispersed phase (either liquid or solid) from a more dense liquid phase. The cyclone separator consists of two generally cylindrical portions positioned around the longitudinal axis in a `piggyback` manner. A vortex finder with an orifice plate captures the dispersed particles entrained in a local secondary flow established by the unique operating and design parameters of the device. Clear fluid is removed from the apparatus through an underflow tube opposite the vortex finder tube. The liquid feed containing dispersed particles is introduced into the primary cyclone around the vortex finder as a swirling annular jet. Another stream, containing no dispersed phase, is introduced as a tangential flow surrounding the annular jet. A polymer stream is injected into the core of the vortex flow of the primary cyclone to increase the stability of the vortex core and to moderate the turbulence.
摘要翻译：已经设计了一种水力旋流装置，用于将较不致密的分散相（液体或固体）与更致密的液相分离。旋风分离器由两个大致圆柱形的部分组成，以“背负”方式围绕纵向轴线定位。具有孔板的涡流探测器捕获夹带在由设备的独特操作和设计参数建立的局部二次流中的分散颗粒。透明液体通过与涡流探针管相对的下溢管从设备中除去。将含有分散颗粒的液体进料作为旋转的环形射流引入旋涡探测器周围的主旋风分离器。作为围绕环形射流的切向流，引入不含分散相的另一流。将聚合物流注入初级旋风分离器的涡流的核心，以增加涡流核心的稳定性并缓和湍流。

10. 发明授权

US08882371B2 Printer with printhead assembly, clutch assembly, and printer ribbon transport assembly 有权
标题翻译：带打印头组件，离合器组件和打印机色带运输组件的打印机
公开(公告)号：US08882371B2
公开(公告)日：2014-11-11
申请号：US13284540
申请日：2011-10-28
申请人： Hsin-Chih Chen , Richard Alan Kelley , Lawrence E. Smolenski , Petrica Dorinel Balcan , Jung Ethan Hoon Lee , Randal Wong
发明人： Hsin-Chih Chen , Richard Alan Kelley , Lawrence E. Smolenski , Petrica Dorinel Balcan , Jung Ethan Hoon Lee , Randal Wong
IPC分类号： B41J17/02 , B41J33/52 , B41J2/325 , B41J2/335
CPC分类号： B41J23/02 , B41J2/14 , B41J2/325 , B41J2/3358 , B41J23/08 , B41J25/001 , B41J25/304 , B41J25/316 , B41J33/52 , F16D13/10 , F16D13/385 , F16D13/58 , F16D21/00
摘要： A printer may include a printhead assembly a clutch assembly, and/or a printer ribbon transport assembly. The printhead assembly may include a printhead biasing assembly defining a biasing ramp which may be configured to apply a biasing force to a printhead support bracket so as to at least partially counteract a ribbon force. The clutch assembly may be configured to supply or take-up a printer ribbon with first and second spool engagement members of different diameters that frictionally engage first and second friction members. The printer ribbon transport assembly may include a rotation lock mechanism configured to prevent rotation of a ribbon take-up core when the take-up core is disengaged from a drive assembly so as to prevent a loss in ribbon tension.
摘要翻译：打印机可以包括打印头组件，离合器组件和/或打印机色带传送组件。打印头组件可以包括限定偏置斜面的打印头偏置组件，该偏压斜面可被配置为向打印头支撑支架施加偏压力，以至少部分地抵消色带的力。离合器组件可以被配置为向打印机带状物提供具有与第一和第二摩擦构件摩擦接合的不同直径的第一和第二卷轴接合构件。打印机色带输送组件可以包括旋转锁定机构，该旋转锁定机构构造成当卷取芯从驱动组件脱离时防止色带卷取芯的旋转，从而防止色带张力的损失。

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