专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06481886B1 Apparatus for measuring pedestal and substrate temperature in a semiconductor wafer processing system 失效
标题翻译：用于测量半导体晶片处理系统中基座和基板温度的装置
公开(公告)号：US06481886B1
公开(公告)日：2002-11-19
申请号：US09513726
申请日：2000-02-24
申请人： Kadthala R. Narendrnath , Liang-Guo Wang , Shamouil Shamouilian , Paul E. Luscher , Hamid Noorbakhsh
发明人： Kadthala R. Narendrnath , Liang-Guo Wang , Shamouil Shamouilian , Paul E. Luscher , Hamid Noorbakhsh
IPC分类号： G01K114
CPC分类号： H01L21/67248 , G01K11/3213 , H01J37/32431 , H01J2237/2001
摘要： Apparatus for measuring wafer support assembly temperature in a semiconductor wafer processing system. The apparatus is a modular plug that is mounted to the support assembly. The plug contains a photoluminescent material that exhibits a decay in luminescence after an excitement which is indicative of the temperature of the support assembly.
摘要翻译：用于测量半导体晶片处理系统中的晶片支撑组件温度的装置。该装置是安装到支撑组件的模块化插头。塞子包含在激发后表现出发光衰减的光致发光材料，其表示支撑组件的温度。

2. 发明授权

US06320736B1 Chuck having pressurized zones of heat transfer gas 有权
标题翻译：夹头具有加热区的传热气体
公开(公告)号：US06320736B1
公开(公告)日：2001-11-20
申请号：US09312909
申请日：1999-05-17
申请人： Shamouil Shamouilian , Arnold Kholodenko , Siamak Salimian , Hamid Noorbakhsh , Efrain Quiles , Dennis S. Grimard
发明人： Shamouil Shamouilian , Arnold Kholodenko , Siamak Salimian , Hamid Noorbakhsh , Efrain Quiles , Dennis S. Grimard
IPC分类号： H01H2300
CPC分类号： H01L21/6831 , C23C16/4586
摘要： A chuck 28 for holding a substrate 4 comprises a surface 27 capable of receiving the substrate 4, the surface 27 having a gas inlet port 40 and a gas exhaust port 42. A non-sealing protrusion is between the gas inlet port 40 and the gas exhaust port 42. The non-sealing protrusion 44 impedes the flow of heat transfer gas between the gas inlet port 40 and the gas exhaust port 42 without blocking the flow of heat transfer gas. Preferably, a sealing protrusion 46 is provided around the periphery of the chuck 28 to form a substantially gas-tight seal with the substrate 4 to enclose and prevent leakage of heat transfer gas into a surrounding chamber 6.
摘要翻译：用于保持基板4的卡盘28包括能够接收基板4的表面27，表面27具有气体入口40和排气口42.非密封突起在气体入口40和气体排气口42.非密封突起44阻止气体入口40和排气口42之间的传热气体的流动，而不阻碍传热气体的流动。优选地，密封突起46设置在卡盘28的周边周围，以与基底4形成基本上气密的密封，以封闭并防止传热气体泄漏到周围室6中。

3. 发明授权

US06863835B1 Magnetic barrier for plasma in chamber exhaust 失效
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06863835B1
公开(公告)日：2005-03-08
申请号：US09557990
申请日：2000-04-25
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/3065 , B44C1/22 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.
摘要翻译：一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内从到达排气泵。磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

4. 发明授权

US06773544B2 Magnetic barrier for plasma in chamber exhaust 有权
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06773544B2
公开(公告)日：2004-08-10
申请号：US09775173
申请日：2001-01-31
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H01L21302
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.
摘要翻译：本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出过程区域。一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

5. 发明授权

US06716302B2 Dielectric etch chamber with expanded process window 有权
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US06716302B2
公开(公告)日：2004-04-06
申请号：US10253496
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H05H100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

6. 发明授权

US06797639B2 Dielectric etch chamber with expanded process window 失效
公开(公告)号：US06797639B2
公开(公告)日：2004-09-28
申请号：US10254969
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H01L2100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

7. 发明授权

US06586886B1 Gas distribution plate electrode for a plasma reactor 有权
标题翻译：用于等离子体反应器的气体分布板电极
公开(公告)号：US06586886B1
公开(公告)日：2003-07-01
申请号：US10027732
申请日：2001-12-19
申请人： Dan Katz , Douglas A. Buchberger, Jr. , Yan Ye , Robert B. Hagen , Xiaoye Zhao , Ananda H. Kumar , Kang-Lie Chiang , Hamid Noorbakhsh , Shiang-Bau Wang
发明人： Dan Katz , Douglas A. Buchberger, Jr. , Yan Ye , Robert B. Hagen , Xiaoye Zhao , Ananda H. Kumar , Kang-Lie Chiang , Hamid Noorbakhsh , Shiang-Bau Wang
IPC分类号： H01J724
CPC分类号： H01J37/3244
摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.
摘要翻译：本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管背板，后板和前板结合在一起并形成组件。组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径至少一个孔的流速。此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的，与孔对齐。

8. 发明授权

US06605177B2 Substrate support with gas feed-through and method 失效
公开(公告)号：US06605177B2
公开(公告)日：2003-08-12
申请号：US10256441
申请日：2002-09-27
申请人： Richard R. Mett , Hamid Noorbakhsh , Robert D. Greenway
发明人： Richard R. Mett , Hamid Noorbakhsh , Robert D. Greenway
IPC分类号： H01L21306
CPC分类号： H01J37/3244 , C23C16/4402 , C23C16/455
摘要： A substrate support comprises an electrode and a dielectric layer covering the electrode, the dielectric layer having a surface to receive a substrate. A gas feed-through provides a gas to the surface of the dielectric layer and comprises a conduit extending through one or more of the dielectric layer and electrode. A dielectric insert in the gas feed-through has a passage therein that allows the gas to be flowed therethrough. Two opposing electrically conducting cups are around the passage in the dielectric insert.

9. 发明授权

US06432259B1 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates 有权
标题翻译：等离子体反应器冷却的天花板，具有热隔离等离子体加热的微型气体分布板阵列
公开(公告)号：US06432259B1
公开(公告)日：2002-08-13
申请号：US09461682
申请日：1999-12-14
申请人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
发明人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
IPC分类号： H05H100
CPC分类号： H01J37/32522 , H01J37/321 , H01J37/3244
摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.
摘要翻译：体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

10. 发明授权

US06303895B1 Method and apparatus for controlling a temperature of a wafer 有权
标题翻译：用于控制晶片温度的方法和装置
公开(公告)号：US06303895B1
公开(公告)日：2001-10-16
申请号：US09588122
申请日：2000-06-02
申请人： Anwar Husain , Hamid Noorbakhsh
发明人： Anwar Husain , Hamid Noorbakhsh
IPC分类号： B23K1000
CPC分类号： H01L21/67109
摘要： A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the wafer and the chuck such that the pressurized gas transfers heat from the wafer to the chuck. Pressure of the pressuried gas is automatically varied such that heat transfer between the wafer and the chuck is varied in response to a difference between an actual wafer temperature and a desired wafer temperature to maintain the desired wafer temperature.
摘要翻译：一种用于在处理期间控制晶片的温度的方法和装置，例如在气体等离子体或非等离子体环境中，其中晶片位于卡盘上。晶片被加热并且加压气体被引入到晶片和卡盘之间的空间中，使得加压气体将热从晶片传递到卡盘。加压气体的压力自动变化，使得晶片和卡盘之间的热传递响应于实际晶片温度和期望晶片温度之间的差异而变化，以保持期望的晶片温度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式