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1. 发明授权

US09847447B2 Semiconductor light-emitting element and optical coupling device 有权
公开(公告)号：US09847447B2
公开(公告)日：2017-12-19
申请号：US14819196
申请日：2015-08-05
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kenji Fujimoto , Takanobu Kamakura
IPC分类号： H01L33/06 , H01L33/30 , H01L25/16
CPC分类号： H01L33/06 , H01L25/167 , H01L33/30 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of Inx (Ga1-yAly)1-xAs (0

2. 发明申请

US20130248912A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20130248912A1
公开(公告)日：2013-09-26
申请号：US13849822
申请日：2013-03-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kenji NAKAMURA , Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting element includes a stacked body and an optical layer. The stacked body has a major surface and includes a light emitting layer. The optical layer is in contact with the surface and includes a dielectric body, first particles, and second particles. The optical layer includes a first region including the dielectric body and the first particles and does not include the second particles and a second region including the dielectric body and the second particles. A sphere-equivalent diameter of the first particle is not less than 1 nanometer and not more than 100 nanometers. A sphere-equivalent diameter of the second particle is more than 300 nanometers and less than 1000 nanometers. An average refractive index of the first region is larger than a refractive index of the stacked body and smaller than a refractive index of the second particle.
摘要翻译：根据一个实施例，半导体发光元件包括层叠体和光学层。该层叠体具有主表面并且包括发光层。光学层与表面接触并且包括介电体，第一颗粒和第二颗粒。光学层包括包括电介质体和第一颗粒的第一区域，并且不包括第二颗粒和包括电介质体和第二颗粒的第二区域。第一颗粒的球体当量直径不小于1纳米且不大于100纳米。第二颗粒的球体当量直径大于300纳米且小于1000纳米。第一区域的平均折射率大于层叠体的折射率，小于第二粒子的折射率。

3. 发明申请

US20210296265A1 ISOLATOR 有权
公开(公告)号：US20210296265A1
公开(公告)日：2021-09-23
申请号：US17016631
申请日：2020-09-10
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Yoshihiko Fuji , Ryohei Nega , Tatsuya Ohguro , Takanobu Kamakura
IPC分类号： H01L23/64 , H01L49/02 , H01F27/28
摘要： According to one embodiment, an isolator includes first and second electrodes, first and second insulating portions, and a first dielectric portion. The first insulating portion is provided on the first electrode. The second electrode is provided on the first insulating portion. The second insulating portion is provided around the second electrode along a first plane perpendicular to a first direction. The second insulating portion contacts the second electrode. The first dielectric portion is provided between the first and second insulating portions. At least a portion of the first dielectric portion contacts the second electrode and is positioned around the second electrode along the first plane. A distance between a lower end of the second electrode and a first interface between the first dielectric portion and the second insulating portion is less than a distance between the first interface and an upper end of the second electrode.

4. 发明授权

US09437779B2 Semiconductor light emitting device and method for manufacturing the same 有权
公开(公告)号：US09437779B2
公开(公告)日：2016-09-06
申请号：US14741789
申请日：2015-06-17
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/62 , H01L33/38 , H01L33/32 , H01L33/40 , H01L33/00 , H01L33/20
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

5. 发明授权

US09331248B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09331248B2
公开(公告)日：2016-05-03
申请号：US14543942
申请日：2014-11-18
申请人： Kabushiki Kaisha Toshiba
发明人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L21/00 , H01L33/40 , H01L33/38
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分沿着从第一半导体层到第二半导体层的方向。多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒金属部分。

6. 发明申请

US20150072456A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20150072456A1
公开(公告)日：2015-03-12
申请号：US14543942
申请日：2014-11-18
申请人： Kabushiki Kaisha Toshiba
发明人： Kumi MASUNAGA , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/40 , H01L33/38
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分沿着从第一半导体层到第二半导体层的方向。多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒金属部分。

7. 发明授权

US11676919B2 Electronic device 有权
公开(公告)号：US11676919B2
公开(公告)日：2023-06-13
申请号：US17194031
申请日：2021-03-05
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Yoichiro Kurita , Takanobu Kamakura , Masayuki Sugiura , Yoshiaki Aizawa
IPC分类号： H01L23/48 , H01L23/64 , H01L23/00 , H01L23/367 , H01L23/31
CPC分类号： H01L23/645 , H01L23/3107 , H01L23/367 , H01L24/48 , H01L2224/48227
摘要： An electronic device includes a substrate, a first insulating film on the substrate, a second insulating film on the first insulating film, first and second coils respectively in the first and second insulating films, first and second terminals, and first and second connection conductors. The first and second insulating films contact each other so that the first and second coils are magnetically coupled. The first insulating film includes a first non-contact portion not contacting the second insulating film. One of the first and second insulating films includes a second non-contact portion not contacting the first or second insulating film. The first terminal is provided on the first non-contact portion and electrically connected to the first coil. The second terminal is provided on the second non-contact portion and electrically connected to the second coil. The first and second connection conductors are connected to the first and second terminals, respectively.

8. 发明授权

US11482645B2 Semiconductor light-emitting device 有权
公开(公告)号：US11482645B2
公开(公告)日：2022-10-25
申请号：US17176758
申请日：2021-02-16
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Hideto Sugawara , Takanobu Kamakura
IPC分类号： H01L33/30 , H01L33/02
摘要： A semiconductor light-emitting device includes first and second semiconductor layers and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a compound semiconductor represented by a compositional formula AlXGa1-XAs (0

9. 发明授权

US09142728B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09142728B2
公开(公告)日：2015-09-22
申请号：US14455540
申请日：2014-08-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Kenji Nakamura , Tsutomu Nakanishi , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/60 , H01L33/40 , H01L33/38 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。该器件还包括设置在该结构的第二半导体层侧上的电极层。电极层包括厚度不小于10纳米且不大于100纳米的金属部分。多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

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